SUP/SUB65P06-20

Vishay Siliconix

P-Channel 60-V (D-S), 175_C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (
) ID (A)
–60 0.020 –65a

TO-220AB
S

TO-263
G

DRAIN connected to TAB

G D S G D S
Top View
Top View D

SUP65P06-20 SUB65P06-20 P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Gate-Source Voltage VGS "20 V

TC = 25_C –65a
Continuous Drain Current
ID
(TJ = 175_C) TC = 125_C –39
A
Pulsed Drain Current IDM –200

Avalanche Current IAR –60

Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ

TC = 25_C (TO-220AB and TO-263) 250d

Power Dissipation PD W
TA = 125_C (TO-263)c 3.7

Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

PCB Mount (TO-263)c RthJA 40

Junction-to-Ambient
Free Air (TO-220AB) RthJA 62.5 _C/W

Junction-to-Case RthJC 0.6

Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70289 www.vishay.com

S-05111—Rev. C, 10-Dec-01 2-1
SUP/SUB65P06-20
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –250 A –60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 A –2.0 –3.0 –4.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = –60 V, VGS = 0 V –1

Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V, TJ = 125_C –50 

VDS = –60 V, VGS = 0 V, TJ = 175_C –150
On-State Drain Currenta ID(on) VDS = –5 V, VGS = –10 V –120 A
VGS = –10 V, ID = –30 A 0.017 0.020

Drain-Source On-State Resistancea rDS(on) VGS = –10 V, ID = –30 A, TJ = 125_C 0.033

VGS = –10 V, ID = –30 A, TJ = 175_C 0.042
Forward Transconductancea gfs VDS = –15 V, ID = –30 A 25 S

Dynamicb
Input Capacitance Ciss 4500
Output Capacitance Coss VGS = 0 V, VDS = –25 V, f = 1 MHz 870 pF
Reversen Transfer Capacitance Crss 350
Total Gate Chargec Qg 85 120
Gate-Source Chargec Qgs VDS = –30 V, VGS = –10 V, ID = –65 A 24 nC
Gate-Drain Chargec Qgd 22
Turn-On Delay Timec td(on) 15 40
Rise Timec tr VDD = –30 V, RL = 0.47
40 80
ns
Turn-Off Delay Timec td(off) ID ] –65 A, VGEN = –10 V, RG = 2.5
65 120
Fall Timec tf 30 60

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current Is –65
A
Pulsed Current ISM –200
Forward Voltagea VSD IF = –65 A, VGS = 0 V –1.1 –1.4 V
Reverse Recovery Time trr 70 120 ns
Peak Reverse Recovery Current IRM(REC) 
IF = –65 A, di/dt = 100 A/s 7 9 A
Reverse Recovery Charge Qrr 0.245 0.54 C

Notes:
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.

www.vishay.com S FaxBack 408-970-5600 Document Number: 70289

2-2 S-05111—Rev. C, 10-Dec-01
 SUP/SUB65P06-20
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

200 200
VGS = 10, 9, 8 V
7V TC = –55_C
160 160
25_C
I D – Drain Current (A)

I D – Drain Current (A)

125_C
120 120
6V

80 80

5V
40 40

4V

0 0
0 2 4 6 8 10 0 2 4 6 8 10

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

100 0.030

TC = –55_C 0.025
80
r DS(on)– On-Resistance (
)
g fs – Transconductance (S)

25_C 0.020 VGS = 10 V

60
125_C
0.015
VGS = 20 V
40
0.010

20
0.005

0 0.000
0 20 40 60 80 100 0 20 40 60 80 100

VGS – Gate-to-Source Voltage (V)

ID – Drain Current (A)

Capacitance Gate Charge

6000 20

5000 Ciss VDS = 30 V

V GS – Gate-to-Source Voltage (V)

16 ID = 65 A
C – Capacitance (pF)

4000
12

3000

8
2000

Coss 4
1000 Crss

0 0
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70289 www.vishay.com

S-05111—Rev. C, 10-Dec-01 2-3
SUP/SUB65P06-20
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
2.0
r DS(on)– On-Resistance (
)

I S – Source Current (A)

TJ = 150_C
(Normalized)

1.5 TJ = 25_C
10
1.0

0.5

0.0 1
–50 –25 0 25 50 75 100 125 150 175 0.3 0.3 0.6 0.9 1.2 1.5

TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
80 500

10 s
Limited by rDS(on)
100
100 s
60
I D – Drain Current (A)

I D – Drain Current (A)

1 ms
10
40
10 ms
100 ms
dc
20 1 TC = 25_C
Single Pulse

0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1
0.1 0.05

0.02

Single Pulse

0.01
10–5 10–4 10–3 10–2 10–1 1 3

Square Wave Pulse Duration (sec)

www.vishay.com S FaxBack 408-970-5600 Document Number: 70289

2-4 S-05111—Rev. C, 10-Dec-01
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Revision: 18-Jul-08 1