Sie sind auf Seite 1von 10

Chapter

PROCESSING OF
DEVICES

A discussion of crystal growth, lithography, etching, doping, and device structures is presented in
the following overview gures.
SEMICONDUCTOR DEVICE PROCESSING: AN OVERVIEW

Semiconductor technology generates hundreds of billions of dollars of


revenue worldwide. Manufacturing plants costing several billion dollars
fabricate devices.

COMPONENTS OF DEVICE PROCESSING

• Bulk crystal growth for substrates

• Epitaxial growth for active device region and doping

• Ion implantation/diffusion for doping

• Lithography to define various regions of devices

• Etching of materials

As technology advances, the challenges in processing become


greater.

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


BULK CRYSTAL GROWTH
Bulk crystal growth techniques are used to grow large crystals from which
substrates are sliced. Substrate availability is a critical component in the
success of a technology. Established technologies are:
Silicon: Up to 30 cm diameter substrates are available.
GaAs: Up to 15 cm substrates are available.
InP: Up to 10 cm substrates are available.

Puller Schematic of Czocharlski-style


crystal growth used to produce
substrate ingots.

Seed
View- Crystal
port
Encapsulant

Heater
Mel
t

Furnace tube Molten zone


Heater Polycrystal

AA AAA
AA
Pull Molten Pull Crystal
material
Seed
Crucible
(a) (c)

Crystal growing from the melt in a crucible: (a) solidification from one
end of the melt (horizontal Bridgeman method); (b) melting and
solidification in a moving zone.

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


EPITAXIAL CRYSTAL GROWTH

Epitaxial growth is used to deposit a few microns of high quality


material which forms the active region of the device. Techniques used
are:

Vapor phase epitaxy (VPE)


Molecular beam epitaxy (MBE)
Metal organic chemical vapor deposition (MOCVD)

Gases containing the specy needed in the crystal flow over a substrate.
Deposition occurs via appropriate chemical dissociation.

AAA
AAAA Substrates

AAAAAA Substrates
AA
A AA
A
Substrate
A A
A
Holder

Substrate Holder
Heater lamps

Vertical Reactor Horizontal Reactor

Reactors for VPE growth. The substrate temperature must be maintained


uniformly over the area. This is achieved better by lamp heating.

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


LITHOGRAPHY: MASK GENERATION AND IMAGE TRANSFER

PHOTORESIST COATING
In order to transfer an image to a wafer, the surface of the wafer has to be made
sensitive to light. To make the wafer (which is usually covered by a thin oxide film or
some other dielectric passivation material) sensitive to an image, a photoresist is
spread on the wafer by a process called spin coating. For the resist to be reliable it
must satisfy three criteria: i) it must have good bonding to the substrate; ii) its
thickness must be uniform; and iii) the thickness should be reliably controlled over
different wafer runs.
Spin coating of a resist on a wafer: A photosensitive resist is "spun" onto the wafer.

Nozzle to deposit

AA AAAA
resist

AA AAAA
A
AA
A
Wafer

Substrate
spinner
Resist Puddle
AAAA
A Start of Spin

AAAAA
Edge Bead
AAA
AA
Coated Wafer Spinning Process

MASK GENERATION AND IMAGE TRANSFER


Transference of an image to the resist by using a mask and etching of the exposed
regions.

AAAAAAAA
Layer to be Light
patterned Mask

Substrate Resist Application Exposur

AA
A AAAA
AAA
e

→ →
Patterned
wafer
AAAA
→ AAA
AAA (Positive Resist)


Resist Removal Etching (Negative Resist) Development

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


LITHOGRAPHY: MASK GENERATION AND IMAGE TRANSFER

The processes used in the generation of a mask for lithography.

Design tape

Generation of a Reticle

e-beam or
optical pattern

Step-and-repeat generation
of mask plate from reticle

Step-and-repeat printing
of substrate from reticle

Substrate patterning
from mask plate

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


DOPING OF SEMICONDUCTORS
DOPING TECHNIQUES

EPITAXIAL DOPING: DIFFUSION DOPING: ION IMPLANTATION:

+ Highly controlled doping + Can have lateral control over dopants + Inexpensive for mass scale applications
+ Easy to switch from n- to p-type – Dopant profiles are not sharp – Dopant placement is not very precise
– Cannot alter doping laterally
– Expensive

PREDISPOSITION DRIVE-IN
IN DIFFUSION

Inert gas + dopants

Dopant layer
Mask Mask Mask Mask

HIGH TEMPERATURE

1.0 Initial profile


DOPANT CONCENTRATION (arbitrary units)

10–1
Intermediate profile
10–2

10–3 Final profile

Junction
10–4
Background doping
in wafer
10–5

10–6
xj
Surface
DEPTH
Doping by diffusion

Mass
Massanalysis
Analysis

GasInin
Gas Rejected ions (wrong type,
Rejected enenrgy,
incorrect Ions (wrong
etc.)type,
}

incorrect energy, etc.)

Source To
To pump
Pump

Extraction
Extraction
}
and
andFocusing
focusing To Pump
To pump ElectrostaticDeflection
Electrostatic deflection

Acceleration
Acceleration
bybyElectric
electric
Field
field
Rejected
Neutral
neutral ions
ToPump
To pump Ions and
and electrons
Electrons

Substrate and
Substrate and
sample to
Sample to be
be
implanted
implanted

Schematic of ddoping by ion implantation

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


ETCHING
Once an image is transferred from a mask to a wafer, one has to remove or etch material from
selected regions to form the final device. Specially designed etchants allow one to remove material
in a selective manner once the resist has been patterned. The choice and control of the etching
process is crucial if the features in the resist film are to become a part of the substrate.

APPROACHES TO ETCHING

WET CHEMICAL PLASMA ETCHING REACTIVE ION BEAM ION BEAM MILLING
ETCHING ETCHING
• Ions are created by • Ions beam is used
• Regions in the generating a plasma • Ions are to “chisel” off
wafer are by rf discharge. The accelerated in an ion material from a
“dissolved” away ions react with implantation wafer. The process
by chemical atoms on the wafer. chamber. The beam is physical rather
reactions. Ions can also be is focused and used than chemical.
• Technique cannot accelerated and to etch materials. Feature sizes <~ 0.1
produce sharp their energy Very small regions µm can be
“sidewalls,” since controlled for can be etched produced.
etching is isotropic. selective etching. selectively.

Ions

Trenching
Redeposition
Redepositon
Resist
(a) Substrate

Shadowing Sidewall etching

(b)

Trenching

The importance of geometric effects in ion beam milling. In (a) the perpendicular incident beam can
produce trenching effects as well as redeposition causing sidewall “ears;” (b) if the beam comes at
an oblique angle and the substrate is rotated, the trenching and “ear” formation can be balanced.

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


INTERFACES BETWEEN MATERIALS

– oxygen
– silicon
Si-O bond: 1.62 Å
O-O bond: 2.65 Å

SiO2

Rows
Si of Si
atoms
a = 5.43 Å
Si-Si bond: 2.34Å

Si/SiO2 is the most important interface in microelectronics. Interface is rough


over ~< 5 Å even though Si and SiO2 have such dissimilar structures.

Interfaces between compound semiconductors with similar crystal structure

Interfaces can be abrupt to


a monolayer

© Prof. Jasprit Singh www.eecs.umich.edu/~singh


EXAMPLES OF HIGH-PERFORMANCE MICROELECTRONICS

(top half) A cross-section of a field effect transistor showing the


gate,source, and drain. The gate width is only 0.1 µm.
(lower half) A planar view of the same device.

A high resolution picture of a bipolar transistor with 1 µm emitter fingers.

© Prof. Jasprit Singh www.eecs.umich.edu/~singh

Das könnte Ihnen auch gefallen