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PROCESSING OF
DEVICES
A discussion of crystal growth, lithography, etching, doping, and device structures is presented in
the following overview gures.
SEMICONDUCTOR DEVICE PROCESSING: AN OVERVIEW
• Etching of materials
Seed
View- Crystal
port
Encapsulant
Heater
Mel
t
AA AAA
AA
Pull Molten Pull Crystal
material
Seed
Crucible
(a) (c)
Crystal growing from the melt in a crucible: (a) solidification from one
end of the melt (horizontal Bridgeman method); (b) melting and
solidification in a moving zone.
Gases containing the specy needed in the crystal flow over a substrate.
Deposition occurs via appropriate chemical dissociation.
AAA
AAAA Substrates
AAAAAA Substrates
AA
A AA
A
Substrate
A A
A
Holder
Substrate Holder
Heater lamps
PHOTORESIST COATING
In order to transfer an image to a wafer, the surface of the wafer has to be made
sensitive to light. To make the wafer (which is usually covered by a thin oxide film or
some other dielectric passivation material) sensitive to an image, a photoresist is
spread on the wafer by a process called spin coating. For the resist to be reliable it
must satisfy three criteria: i) it must have good bonding to the substrate; ii) its
thickness must be uniform; and iii) the thickness should be reliably controlled over
different wafer runs.
Spin coating of a resist on a wafer: A photosensitive resist is "spun" onto the wafer.
Nozzle to deposit
AA AAAA
resist
AA AAAA
A
AA
A
Wafer
Substrate
spinner
Resist Puddle
AAAA
A Start of Spin
AAAAA
Edge Bead
AAA
AA
Coated Wafer Spinning Process
AAAAAAAA
Layer to be Light
patterned Mask
AA
A AAAA
AAA
e
→ →
Patterned
wafer
AAAA
→ AAA
AAA (Positive Resist)
→
Resist Removal Etching (Negative Resist) Development
Design tape
Generation of a Reticle
e-beam or
optical pattern
Step-and-repeat generation
of mask plate from reticle
Step-and-repeat printing
of substrate from reticle
Substrate patterning
from mask plate
+ Highly controlled doping + Can have lateral control over dopants + Inexpensive for mass scale applications
+ Easy to switch from n- to p-type – Dopant profiles are not sharp – Dopant placement is not very precise
– Cannot alter doping laterally
– Expensive
PREDISPOSITION DRIVE-IN
IN DIFFUSION
Dopant layer
Mask Mask Mask Mask
HIGH TEMPERATURE
10–1
Intermediate profile
10–2
Junction
10–4
Background doping
in wafer
10–5
10–6
xj
Surface
DEPTH
Doping by diffusion
Mass
Massanalysis
Analysis
GasInin
Gas Rejected ions (wrong type,
Rejected enenrgy,
incorrect Ions (wrong
etc.)type,
}
Source To
To pump
Pump
Extraction
Extraction
}
and
andFocusing
focusing To Pump
To pump ElectrostaticDeflection
Electrostatic deflection
Acceleration
Acceleration
bybyElectric
electric
Field
field
Rejected
Neutral
neutral ions
ToPump
To pump Ions and
and electrons
Electrons
Substrate and
Substrate and
sample to
Sample to be
be
implanted
implanted
APPROACHES TO ETCHING
WET CHEMICAL PLASMA ETCHING REACTIVE ION BEAM ION BEAM MILLING
ETCHING ETCHING
• Ions are created by • Ions beam is used
• Regions in the generating a plasma • Ions are to “chisel” off
wafer are by rf discharge. The accelerated in an ion material from a
“dissolved” away ions react with implantation wafer. The process
by chemical atoms on the wafer. chamber. The beam is physical rather
reactions. Ions can also be is focused and used than chemical.
• Technique cannot accelerated and to etch materials. Feature sizes <~ 0.1
produce sharp their energy Very small regions µm can be
“sidewalls,” since controlled for can be etched produced.
etching is isotropic. selective etching. selectively.
Ions
Trenching
Redeposition
Redepositon
Resist
(a) Substrate
(b)
Trenching
The importance of geometric effects in ion beam milling. In (a) the perpendicular incident beam can
produce trenching effects as well as redeposition causing sidewall “ears;” (b) if the beam comes at
an oblique angle and the substrate is rotated, the trenching and “ear” formation can be balanced.
– oxygen
– silicon
Si-O bond: 1.62 Å
O-O bond: 2.65 Å
SiO2
Rows
Si of Si
atoms
a = 5.43 Å
Si-Si bond: 2.34Å