Experiment 1

Objective:
To Study the Character tics of the bipolar transistor and Measure the main parameters of the
bipolar transistor

Apparatus :

(1) DL 3155E22 Power Electronic Kit .

(2) Connecting Wires ,
(3) CRO & Probes

Theory:

The Bipolar Junction Transistor (BJT) was invented in 1948 by Bardeen, Brittain and
Shockley. It is structurally composed of three alternating layers of “p” drugged and “n” drugged
silicon. The three regions are termed.

(1) Emitter region

(2) Base region
(3) Collector region
They are connected through an ohmic junction. A first analysis of this structure can suggest two
p-n opposed diodes, one between the base and the emitter and one between the base and the
collector. A suitable design of the structure on three levels sees that there is a collector current
that is not much different, in its value, from the emitter current. The current that must be supplied
to the base (IB=IE-IC obtained from the Kirchhoff laws and the convention on the signs) is very
much smaller of both the collector current and the emitter current. This means an amplification
of the current between base and emitter: a small variation of the current in the base causes a big
variation of the current in the emitter and, therefore, in the collector.
The ratio between the variation of the base current and the variation of the collector
current
(dIC /dIB) is named “current gain” or β. In power transistors this is exactly the characteristic
that is best used: an analogue or digital electronic device supplies a low power signal; this is
amplified by the transistor and applied to the load which can be piloted through a power signal
that can be even 100 times the one that is applied in the base. Very often, in power transistors the
power is supplied to the load in the form of ON/OFF signals: in these cases, in order to limit the
power that is dissipated on the transistor and to maximize the power that is applied to the load, it
is fundamental the speed at which the transistor passes from the condition of “interdict” (non
conductor) to the condition of “saturated” (conductor) and vice versa. It is during these periods
that the transistor dissipates power. Remember that the dissipation of power on the transistor is
not only a problem of efficiency, but can also originate problems of overheating of the transistor.
Structure of Bipolar Transistor :

In the above figure you can see the structure and the circuit diagram of the bipolar transistor, as
well as the convention on the sign. As already said, the device consists of three alternate “n” type
and “p” type regions. Here we consider an NPN type transistor, but similar things can be said
about the PNP type transistor. In the figure, the width of the emitter, of the base and of the
collector are indicated through the symbols W
E, WB and WC; also the two opposed diodes are represented, although they are not an
exhaustive model for the transistor. In fact, the small quantity of electrons and gaps that flows
through the base would not be considered in this model.
The two diodes are polarized by the relevant voltage sources. The convention on the sign is such
that the diodes are directly polarized when a positive voltage is applied at their ends. The base
and collector currents are considered as having the positive sign when they enter the terminals,
while the emitter current is considered positive when it exits the relevant terminal.

Bipolar Transistor Block:

The Circuit that will be used is the one in figure 1.2 that represents a bipolar transistor in the
common emitter configuration: you must refer to this drawing and to the module DL 3155E22 .
The diode D1 makes sure that the base voltage never goes below the emitter voltage (Vb=Ve-0.7
max.). The diode D2 limits the collector voltage to the value of the supply voltage (+15Vdc in
this case) +0.7V: the function of this diode is essential when inductive loads are used. The switch
R allows to connect between terminal 1 and the base of the transistor (terminal 2) the resistance
R1 (HI R: high resistance = 100 kOhm) or the resistance R2 (LOW R: low resistance = 470
Ohm): in this way, during the experiments it will be possible to vary the base input resistance.
The switch C allows to connect the capacitor C1 (speed-up capacitor) that allows to speed up the
switching of the transistor for the high frequency signals.

The Loads RL1, RL2 and IL1 of the LOAD block will have to be connected to the collector of
the transistor. In the case of the inductive load, when the transistor starts conducting, the current
in the inductance increases according to the law v=L·di/dt where v is the voltage at the ends of
the inductance. When the transistor is interdicted, the collector current reaches 0: this fact
implies that the voltage at the ends of the inductance reverses its value (the voltage of the point
that is connected to the collector becomes positive with respect to the supply voltage). In order to
avoid that the voltages at the collector exceed the limit that the component can tolerate and to
allow that the current at the inductance goes down to 0, we put a diode in parallel to the
inductance.

Experiment Procedure:

RESISTIVE LOAD:
( 1) Connect As per circuit Diagram show in Figure 1.3.

( 2) Connect through 2 leads the resistance RL1 (RL1 = 150 Ohm) of the LOAD block to
terminals 3 and 4.

(3) Switch to the LOW position switch R.

(4) Switch to the OFF position switch C.

(5) Connect through a lead the terminal OUT of the DRIVER block to terminal 1.

(6) Connect a probe of the oscilloscope to terminal 4 (collector of the transistor).

(7) Vary through the trimmer P1 of the DRIVER block the frequency of the square wave signal
that is generated by the DRIVER block.

(8) Vary through the trimmer P2 of the DRIVER block the duty-cycle (ratio between the period
during which the square wave signal is at the high level and the total period) of the square wave
signal that is generated by the DRIVER block.
(9) Take the frequency of the square wave to its maximum value and the duty-cycle to its
minimum value.
(10) Measure the time that is spent by the transistor to switch (for example, take the trigger of the
oscilloscope at the rise edge and measure the switching time at the lowering edge).

( 11) Disconnect the resistance RL1 from terminals 3 and 4 and connect the resistance RL2 (RL2
= 470 ohm) of the LOAD block to terminals 3 and 4. Repeat the measurement of the switching
time.
(12) Switch to the HI position switch R: give an explanation to the fact that the switching times
are longer
(13) Disconnect the resistance RL2 from terminals 3 and 4 and connect the resistance RL1 of the
LOAD block to terminals 3 and 4.
(14) Give an explanation to the fact that the amplitude of the visualized signal is decreased
(suggestion: remember that the emitter current and, therefore, the collector current are
proportional to the base current).

(15) Switch to the LOW position switch R and to the ON position switch C: the switching time is
decreased because the capacitance C1 loads the parasitic capacitances of the transistor much
more quickly than a resistance.

(16) Switch to the HI position switch R: in this case, on the lowering edge of the switching the
capacitance C1 completely saturates T1 and then it discharges with an exponential behavior
toward the voltage value that is determined by the value of the resistance that is connected to the
base.).

INDUCTIVE LOAD:
(1) Connect the Circuit As per Circuit diagram shown in figure 1.3

(2) Connect one end of the inductance IL1 of the LOAD block to terminal 3 and the other end to
an end of the resistance RL2. Connect the other end of the resistance RL2 to terminal 4.

(3) Switch to the LOW position switch R.

(4) Switch to the ON position switch C.

(5) Connect through a lead the terminal OUT of the DRIVER block to terminal 1.

(6) Connect a probe of the oscilloscope to terminal 4 (collector of the transistor).

(7) Take through P1 the frequency of the square wave to its minimum value and through P2
the duty cycle to its maximum value.

(8) Check that when T1 starts to be interdicted the voltage of the collector exceeds the supply
voltage by approximately 0.7 V (the conduction voltage of the diode D2): this gives to the
Inductance the possibility to discharge its energy and, therefore, to take its current to 0
 Circuit Diagram 1.3

Observations:

Result:
 Experiment 6
Objective:

To Determine the characteristics of the GTO

Apparatus :

(1) DL 3155E22 Power Electronic Kit .

(2) Connecting Wires ,
(3) CRO & Probes.

Theory :
The GTO thyristor (Gate Turn Off thyristor) is a semiconductor device that operates ad a switch
(on-off) through a signal that is sent to its gate. Like a conventional thyristor, the GTO can be
activated through a positive signal (between gate and cathode), input to the gate. Differently
from the thyristor, that can be switched off only if the current between anode and cathode goes to
0, the GTO can be switched off at any moment by applying a signal to the gate equal to zero.

Electric Diagram:
The circuit that will be used is the one in figure 6.2 that represents the base circuit for the study
of the GTO:: refer to this drawing and to the module DL 3155E22. Since it is possible to switch
off the GTO through a gate signal, the experiments will be performed with a direct current power
supply. The GTO DRIVER is a circuit that is piloted by the underlying switch that generates a
voltage able to trigger the switching off of the GTO. The diode D1 limits the anode voltage to
the value of the supply voltage (+15Vdc in this case) +0.7V: the function of this diode is
indispensable when inductive loads are used. The loads RL1, RL2 and IL1 of the LOAD block
will have to be connected between terminal 3 (anode) and terminal 2 (supply voltage). The case
of the inductive load has been already explained in the experiments for the bipolar transistor: the
same considerations are valid also for the GTO on condition that we change the collector with
the anode and the emitter with the cathode.
Experemental Procedure:
(1) Refer to figure 6.2.
(2) Connect through 2 leads the resistance RL1 (RL1 = 150 Ohm) of the LOAD block to
terminals 2 and 3.
(3) Connect a probe of the oscilloscope to terminal 3 (anode of the GTO).

(4) Measure the voltage levels of the gate when the GTO is conducting (GTO DRIVER ON) and
when the GTO is interdicted (GTO DRIVER OFF). Remember that the junction between gate
and cathode is similar to a diode. It is interesting to notice how the gate current is not
proportional to the anode current as it is normally the case in the bipolar transistors.

(5) Measure the voltage levels of the anode of the GTO when the GTO is conducting (GTO
DRIVER ON) and when the GTO is interdicted (GTO DRIVER OFF). It is interesting to notice
how the anode voltage is not linked to the gate current or to the value of the resistance of the load
(as it would be for the bipolar transistors).

Observations :

Result :