QM3006D

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The QM3006D is the highest performance trench

N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID
which provide excellent RDSON and gate charge
30V 5.5mΩ 80A
for most of the synchronous buck converter
applications .
Applications
The QM3006D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full z High Frequency Point-of-Load Synchronous
function reliability approved. Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features z Load Switch

z Advanced high cell density Trench technology TO252 Pin Configuration

z Super Low Gate Charge D
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings S

G
Rating
Symbol Parameter 10s Steady State Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 80 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 57 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 27 17 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 23 14.5 A
2
IDM Pulsed Drain Current 160 A
3
EAS Single Pulse Avalanche Energy 252 mJ
IAS Avalanche Current 48 A
4
PD@TC=25℃ Total Power Dissipation 53 W
4
PD@TA=25℃ Total Power Dissipation 6 2.4 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 ℃/W
RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 2.8 ℃/W
Rev A.02 D051311

1
 QM3006D
N-Ch 30V Fast Switching MOSFETs

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.028 --- V/℃
VGS=10V , ID=30A --- 4.7 5.5
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=15A --- 7.5 9
VGS(th) Gate Threshold Voltage 1.0 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -6.16 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 43 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.1 Ω
Qg Total Gate Charge (4.5V) --- 20 28
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 7.6 10.6 nC
Qgd Gate-Drain Charge --- 7.2 10.1
Td(on) Turn-On Delay Time --- 7.8 15.6
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 15 27
ns
Td(off) Turn-Off Delay Time ID=15A --- 37.3 74.6
Tf Fall Time --- 10.6 21.2
Ciss Input Capacitance --- 2295 3213
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 267 374 pF
Crss Reverse Transfer Capacitance --- 210 294

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=24A 63 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 80 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,6 --- --- 160 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
trr Reverse Recovery Time --- 14 --- nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ --- 5 --- nC

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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 QM3006D
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
180

150
ID Drain Current (A)

120 VGS=10V
VGS=7V
90 VGS=5V
VGS=4.5V
VGS=3V
60

30

0
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

12 10
ID =15A

TJ=150℃ TJ=25℃ 8
VGS , Gate to Source Voltage (V)

6 VDS=15V
IS(A)

6 VDS=24V

3
2

0
0
0 0.3 0.6 0.9 1.2
0 6 12 18 24 30 36 42
VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

1.8 1.8
Normalized On Resistance

1.4 1.4
Normalized VGS(th)

1 1.0

0.6 0.6

0.2 0.2
-50 0 50 100 150 -50 -5 40 85 130 175
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

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 QM3006D
N-Ch 30V Fast Switching MOSFETs
10000 1000
F=1.0MHz

10us
Ciss 100
Capacitance (pF)

1000
100us

ID (A)
Coss 10
10ms
100 Crss 100ms
DC
1

TC=25℃
Single Pulse
10 0
1 5 9 13 17 21 25 0.1 1 10 100
VDS , Drain to Source Voltage (V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.2

0.1 0.1

0.05
0.02
0.01
P DM T ON
0.01 SINGLE
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform