DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION PACKAGE DRAWING (Unit : mm)

This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management 8 5
1, 2, 3 ; Source
application of notebook computers. 4 ; Gate
5, 6, 7, 8 ; Drain

FEATURES
• Super low on-state resistance 6.0 ±0.3
1 4
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 4.4

1.44
5.37 Max. 0.8

1.8 Max.
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)

+0.10
–0.05
• Low Ciss : Ciss = 750 pF TYP.

0.15
0.5 ±0.2
• Built-in G-S protection diode
0.05 Min.
1.27 0.78 Max. 0.10

• Small and surface mount package (Power SOP8) 0.40 +0.10

–0.05 0.12 M

ORDERING INFORMATION
PART NUMBER PACKAGE

µPA1705G Power SOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)

Drain to Source Voltage (VGS = 0) VDSS 30 V
Gate to Source Voltage (VDS = 0) VGSS ±25 V
EQUIVALENT CIRCUIT
Drain Current (DC) ID(DC) ±8 A
Note1
Drain Current (Pulse) ID(pulse) ±50 A Drain
Note2
Total Power Dissipation (TA = 25 °C) PT 2.0 W
Channel Temperature Tch 150 °C Body
Gate Diode
Storage Temperature Tstg –55 to + 150 °C

Gate
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % Protection Source
2 Diode
2. Mounted on ceramic substrate of 1200 mm x 1.7 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. G12712EJ1V0DS00 (1st edition)

Date Published February 1999 NS CP(K)
Printed in Japan
© 1998, 1999
 µPA1705

ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 4.0 A 19 27 mΩ

RDS(on)2 VGS = 4.5 V, ID = 4.0 A 30 40 mΩ

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 4.0 8.4 S

Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA

Gate to Source Leakage Current IGSS VGS = ±25 V, VDS = 0 V ±10 µA

Input Capacitance Ciss VDS = 10 V 750 pF

Output Capacitance Coss VGS = 0 V 350 pF

Reverse Transfer Capacitance Crss f = 1 MHz 160 pF

Turn-on Delay Time td(on) ID = 4.0 A 19 ns

Rise Time tr VGS(on) = 10 V 107 ns

Turn-off Delay Time td(off) VDD = 15 V 50 ns

Fall Time tf RG = 10 Ω 32 ns

Total Gate Charge QG ID = 8.0 A 19 nC

Gate to Source Charge QGS VDD = 24 V 2.4 nC

Gate to Drain Charge QGD VGS = 10 V 6.3 nC

Body Diode Forward Voltage VF(S-D) IF = 8.0 A, VGS = 0 V 0.8 V

Reverse Recovery Time trr If = 8.0 A, VGS = 0 V 33 ns

Reverse Recovery Charge Qrr di/dt = 100A/µs 22 nC

TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE

D.U.T. D.U.T.
RL VGS IG = 2 mA RL
90 %
VGS VGS (on)
RG Wave Form 10 %
0
PG. RG = 10 Ω VDD PG. 50 Ω VDD
ID 90 %
90 %
ID
VGS
I 10 % 10 %
0 D
Wave Form
0

t td (on) tr td (off) tf

t = 1µ s ton toff
Duty Cycle ≤ 1 %

2 Data Sheet G12712EJ1V0DS00

 µPA1705

TYPICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA AMBIENT TEMPERATURE
2.8
Mounted on ceramic
dT - Percentage of Rated Power - %

substrate of

PT - Total Power Dissipation - W

2.4
100 1200 mm2 × 1.7 mm
2.0
80
1.6
60
1.2
40
0.8

20 0.4

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100
ID(pulse) = 50 A Remark
ite
d Mounted on ceramic substrate of 2000 mm2 × 1.7 mm
Lim V)
on
) 10
S( S = 1
ID - Drain Current - A

RD t VG m
s
(a ID(DC) = 8A
10 10
m
10 s
0
m
Po s
we
r D DC
iss
1 ipa
tio
n
Lim
ite
d
TA = 25 ˚C
Single Pulse
0.1
0.1 1 10 100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000
rth(t) - Transient Thermal Resistance - ˚C/W

100

10

0.1

Mounted on ceramic
0.01 substrate of
1200 mm 2 to 1.7 mm
Single Pulse
Channel to Ambient
0.001
100 µ 1m 10 m 100 m 1 10 100 1000 10 000

PW - Pulse Width - s

Data Sheet G12712EJ1V0DS00 3

 µPA1705

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE
100
Pulsed Pulsed
20
ID - Drain Current - A

ID - Drain Current - A
10
VGS = 10 V

TA = 125 ˚C VGS = 4.5 V

1 75 ˚C 10
25 ˚C
–25 ˚C
0.1

0.01 VDS = 10 V
0 2 4 6 8 0 0.2 0.4 0.6 0.8
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS(on) - Drain to Source On-State Resistance - mΩ

DRAIN CURRENT GATE TO SOURCE VOLTAGE
100
| yfs | - Forward Transfer Admittance - S

VDS = 10 V Pulsed
Pulsed
150

10 ID = 4 A

TA = 125 ˚C 100
75 ˚C
25 ˚C
–25 ˚C
1
50

0.1 1 10 100 0 5 10 15
ID - Drain Current - A VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs.

RDS(on) - Drain to Source On-State Resistance - mΩ

RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE

VGS(off) - Gate to Source Cutoff Voltage - V

Pulsed VGS = 0 V
70 2.0 IF = 8 A

60

50

40
VGS = 4.5 V 1.0
30

20
VGS=10 V
10

0 0
1 10 100 –20 0 20 40 60 80 100 120 140 160
ID - Drain Current - A Tch - Channel Temperature - ˚C

4 Data Sheet G12712EJ1V0DS00

 µPA1705

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
RDS(on) - Drain to Source On-State Resistance - mΩ

Pulsed
50
100

ISD - Diode Forward Current - A

40 VGS = 4.5 V
10

30
VGS = 0 V
1

20 VGS = 10 V

0.1
10
0 0.5 1.0 1.5
ID = 4 A
0 VSD - Source to Drain Voltage - V
–20 0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
1 000 0 1 000
VDS = 10 V
VGS = 0 V td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF

f = 1 MHz
tr

1 000 100
Ciss td(off)
tf
Coss td(on)

100 Crss 10

VDD = 15 V
VGS(on) = 10 V
10 1 RG = 10 Ω
0.1 1 10 100 0.1 1 10 100
VGS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAIN CURRENT
1 000 di/dt = 100 A/ µs 40
VGS = 0 ID = 8 A
trr - Reverse Recovery Time - ns

VDS - Drain to Source Voltage - V

VGS - Gate to Source Voltage - V

14

30 12
100
VDD = 24 V VGS 10
15 V
20 6V 8

10 6

10 4

2
VDS
1
0
0.1 1 10 100 0 5 10 15 20
IF - Diode Current - A QG - Gate Charge - nC

Data Sheet G12712EJ1V0DS00 5

 µPA1705

[MEMO]

6 Data Sheet G12712EJ1V0DS00

 µPA1705

[MEMO]

Data Sheet G12712EJ1V0DS00 7

 µPA1705

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confirm that this is the latest version.
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M7 98. 8
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