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Data Sheet
Revision 2.0, 2015-03-13
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Information
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BFP640
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures
List of Figures
List of Tables
List of Tables
Product Brief
1 Product Brief
The BFP640 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10
mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately
40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device
is housed in an easy to use plastic package with visible leads.
Features
2 Features
Applications
Maximum Ratings
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Characteristics
4 Thermal Characteristics
240
200
160
Ptot [mW]
120
80
40
0
0 25 50 75 100 125 150
T [°C]
S
Electrical Characteristics
5 Electrical Characteristics
5.1 DC Characteristics
Electrical Characteristics
VC
Top View
Bias -T
OUT
E C
VB
B E
Bias-T (Pin 1)
IN
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Electrical Characteristics
30
160µA
140µA
25
120µA
20 100µA
80µA
IC [mA]
15
60µA
10 40µA
20µA
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
3
10
hFE
2
10
0 1 2
10 10 10
I [mA]
c
Electrical Characteristics
2
10
1
10
0
10
IC [mA]
−1
10
−2
10
−3
10
−4
10
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V
0
10
−1
10
−2
10
−3
10
IB [mA]
−4
10
−5
10
−6
10
−7
10
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Electrical Characteristics
−9
10
−10
10
IB [A]
−11
10
−12
10
−13
10
0.6 0.7 0.8 0.9 1 1.1 1.2
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Electrical Characteristics
45
40 4.00V
3.50V
35
3.00V
30
fT [GHz]
25 2.50V
20
15 2.00V
10
5 1.00V
0
0 10 20 30 40 50 60
I [mA]
C
30
25
20
OIP3 [dBm]
15
10
2V, 1500MHz
3V, 1500MHz
5 2V, 2400MHz
3V, 2400MHz
0
0 5 10 15 20 25 30 35 40
I [mA]
C
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, Parameters: VCE in V, f in MHz
Electrical Characteristics
30
27
8
20 19
15
24 3
28
19
25
110
22
2
18
17
21
12
1143
26
25
17 16
20 19
28
23
15
20
27
22
25
18
21
24
IC [mA]
26
15
27
26
25
24
19
23
10
22
17
18
21
20
25
23 24
22 22 23
16 19 20 21 19 20 21 19
5 18
1 1.5 2 2.5 3 3.5 4
VCE [V]
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz
30 13
11
0
−2
12
1
9
8
5
10
7
25
12
11
2
3
4
20 11
9
10
6
IC [mA]
8
7
10
9 9
15 8 8
6 7 7
5 6 6
10 4 5 5
3 4 4
2 3 3 3
1 2 2 2
0 1 1
−1 0 0
−1 −1
5
1 1.5 2 2.5 3 3.5 4
VCE [V]
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 2.4 GHz
Electrical Characteristics
0.2
0.16
0.12
CCB [pF]
0.08
0.04
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V [V]
CB
40
35
30
G
ms
25
G [dB]
20
Gma
15
|S |2
21
10
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Electrical Characteristics
45
40
0.15GHz
35
0.45GHz
30
0.90GHz
Gmax [dB]
25 1.50GHz
1.90GHz
20 2.40GHz
3.50GHz
15
5.50GHz
10
10.00GHz
5
0
0 10 20 30 40 50 60
I [mA]
C
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
40
0.15GHz
35
0.45GHz
30 0.90GHz
1.50GHz
25
1.90GHz
Gmax [dB]
2.40GHz
20
3.50GHz
15
5.50GHz
10 10.00GHz
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V [V]
CE
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz
Electrical Characteristics
1
1.5
0.5 2
0.4 9.0
10.0
8.0 3
0.3 7.0 10.0
9.0
8.0
6.0 4
7.0
0.2 6.0 5
5.0 5.0
0.03 to 10 GHz
4.0
0.1 10
4.0
3.0
0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5
0
2.0 0.03
0.03
3.0
−0.1 −10
1.0
−0.2 −5
2.0
−4
−0.3
−3
1.0
−0.4
−0.5 −2
−1.5
−1 6.0mA
25mA
1
1.5
0.5 2
0.4
3
0.3
4
0.2 0.45 to 10 GHz 5
−0.5 −2
−1.5
6mA
−1
25mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 25 mA
Electrical Characteristics
1
1.5
0.5 2
0.4
3
0.3
4
0.2 5
10.0
0.03 to 10 GHz
0.1 10.0 9.0 10
8.0
9.0
7.0
0.1 0.2 0.3 0.4 0.5 8.0 1 6.01.5 2 3 4 5
0 5.0 0.03
7.0 0.03
4.0
6.0
3.0
5.0 2.0
−0.1 −10
4.0
1.0
3.0
−0.2 −5
2.0
1.0 −4
−0.3
−3
−0.4
−0.5 −2
−1.5
−1 6.0mA
25mA
1.8
1.6
1.4
1.2
NFmin [dB]
0.8
I = 25mA
0.6 C
I = 6.0mA
C
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Electrical Characteristics
3
f = 10GHz
f = 5.5GHz
2.5 f = 3.5GHz
f = 2.4GHz
2
NFmin [dB]
1.5
1
f = 1.9GHz
f = 1.5GHz
0.5
f = 0.9GHz
f = 0.45GHz
0
0 5 10 15 20 25 30 35 40 45
IC [mA]
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
3.5
3
f = 10GHz
f = 5.5GHz
2.5
f = 3.5GHz
f = 2.4GHz
NF50 [dB]
1.5
1
f = 1.9GHz
f = 1.5GHz
0.5
f = 0.9GHz
f = 0.45GHz
0
0 5 10 15 20 25 30 35 40 45
IC [mA]
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves.
Simulation Data
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP640 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
4 3
1.25 ±0.1
2.1 ±0.1
0.1 MIN.
0.15
1 2
0.3 +0.1
-0.05
+0.1
0.15 -0.05
+0.1
4x 0.6 -0.05
0.1 M 0.2 M A
SOT343-PO V08
0.6
0.8
1.6
1.15
0.9
SOT343-FP V08
Type code
Manufacturer
2005, June
Pin 1
4 0.2
8
2.3