AO4435

30V P-Channel MOSFET

General Description Product Summary

The AO4435 uses advanced trench technology to VDS = -30V

provide excellent RDS(ON), and ultra-low low gate charge ID = -10.5A (VGS = -20V)
with a 25V gate rating. This device is suitable for use as RDS(ON) < 14mΩ (VGS = -20V)
a load switch or in PWM applications. RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
-RoHS Compliant
-AO4435 is Halogen Free 100% UIS Tested
100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D
D
D

G G
S S
S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -10.5
Current A TA=70°C ID -8 A
B
Pulsed Drain Current IDM -80
TA=25°C 3.1
Power Dissipation A PD W
TA=70°C 2.0
Avalanche Current B IAR -20 A
Repetitive avalanche energy 0.3mH B EAR 60 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 32 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady State 60 75 °C/W
Maximum Junction-to-Lead C Steady State RθJL 17 24 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
VDS = -30V, VGS = 0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ = 55°C -5
IGSS Gate-Body leakage current VDS = 0V, VGS = ±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 -2.3 -3 V
ID(ON) On state drain current VGS = -10V, VDS = -5V -80 A
VGS = -20V, ID = -11A 11 14
TJ=125°C 15 19
RDS(ON) Static Drain-Source On-Resistance mΩ
VGS = -10V, ID = -10A 15 18
VGS = -5V, ID = -5A 27 36
gFS Forward Transconductance VDS = -5V, ID = -10A 22 S
VSD Diode Forward Voltage IS = -1A,VGS = 0V -0.74 -1 V
IS Maximum Body-Diode Continuous Current -3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1130 1400 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 240 pF
Crss Reverse Transfer Capacitance 155 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 5.8 8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 18 24 nC
Qg(4.5V) Total Gate Charge 9.5
VGS=-10V, VDS=-15V, ID=-10A
Qgs Gate Source Charge 5.5 nC
Qgd Gate Drain Charge 3.3 nC
tD(on) Turn-On DelayTime 8.7 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1.5Ω, 8.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs 25 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 12 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
VDS= -5V
-10V
-8V
60 -6V 60
-ID (A)

-ID(A)
40 40

-4.5V 125°C
20 20
VGS= -4V
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.6

35 VGS=-5V VGS=-10V
Normalized On-Resistance

1.4 ID=-10A
30
RDS(ON) (mΩ )

25 1.2 VGS=-20V
ID=-11A
20
1.0 VGS=-5V
VGS=-10V
15 ID=-5A
0.8
10
VGS=-20V
5 0.6
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

55 1E+01
ID=-11A
1E+00
45
1E-01 125°C
RDS(ON) (mΩ )

35 1E-02
-IS (A)

1E-03 25°C
25 125°C
1E-04

15
25°C 1E-05

1E-06
5
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10 12 14 16 18 20
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000

8 VDS=-15V
1500 Ciss
ID=-10A

Capacitance (pF)
-VGS (Volts)

6
1000
4
Coss
500
2

Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 1000
RDS(ON) limited TJ(Max)=150°C
100 TA=25°C
10µs
100
Power (W)
-ID (Amps)

10 100µs
1ms
1 10ms
100ms 10
TJ(Max)=150°C
0.1 10s
TA=25°C
DC
0.01 1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Zθ JA Normalized Transient

1
Thermal Resistance

0.1

PD
0.01
Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4435

G ate C harge Test C ircuit & W aveform

Vgs
Qg
- -10V
VD C
-
+ Vds Q gs Qgd
VD C
+
DUT
V gs

Ig

C harge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com