November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

These N-Channel enhancement mode field effect transistors High density cell design for low RDS(ON).
are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch.
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, Rugged and reliable.
and fast switching performance. They can be used in most
High saturation current capability.
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.

___________________________________________________________________________________________

G
D
G
S
TO-92 S
2N7000
(TO-236AB)
2N7002/NDS7002A

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter 2N7000 2N7002 NDS7002A Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V

VGSS Gate-Source Voltage - Continuous ±20 V

- Non Repetitive (tp < 50µs) ±40

ID Maximum Drain Current - Continuous 200 115 280 mA
- Pulsed 500 800 1500
PD Maximum Power Dissipation 400 200 300 mW
o
Derated above 25 C 3.2 1.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TL Maximum Lead Temperature for Soldering 300 °C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W

© 1997 Fairchild Semiconductor Corporation

2N7000.SAM Rev. A1
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA All 60 V
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 1 µA
TJ=125°C 1 mA
VDS = 60 V, VGS = 0 V 2N7002 1 µA
NDS7002A
TJ=125°C 0.5 mA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA
VGS = 20 V, VDS = 0 V 2N7002 100 nA
NDS7002A
IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nA
VGS = -20 V, VDS = 0 V 2N7002 -100 nA
NDS7002A
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V
VDS = VGS, ID = 250 µA 2N7002 1 2.1 2.5
NDS7002A
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 2N7000 1.2 5 Ω
TJ =125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V, ID = 500 mA 2N7002 1.2 7.5
TJ =100°C 1.7 13.5
VGS = 5.0 V, ID = 50 mA 1.7 7.5
TJ =100C 2.4 13.5
VGS = 10 V, ID = 500 mA NDS7002A 1.2 2
TJ =125°C 2 3.5
VGS = 5.0 V, ID = 50 mA 1.7 3
TJ =125°C 2.8 5
VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 0.6 2.5 V
VGS = 4.5 V, ID = 75 mA 0.14 0.4
VGS = 10 V, ID = 500mA 2N7002 0.6 3.75
VGS = 5.0 V, ID = 50 mA 0.09 1.5
VGS = 10 V, ID = 500mA NDS7002A 0.6 1
VGS = 5.0 V, ID = 50 mA 0.09 0.15

2N7000.SAM Rev. A1
Electrical Characteristics T A = 25oC unless otherwise noted
Symbol Parameter Conditions Type Min Typ Max Units
ON CHARACTERISTICS Continued (Note 1)
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mA
VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700
VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700
gFS Forward Transconductance VDS = 10 V, ID = 200 mA 2N7000 100 320 mS
VDS > 2 VDS(on), ID = 200 mA 2N7002 80 320
VDS > 2 VDS(on), ID = 200 mA NDS7002A 80 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, All 20 50 pF
f = 1.0 MHz All
Coss Output Capacitance 11 25 pF
Crss Reverse Transfer Capacitance All 4 5 pF
ton Turn-On Time VDD = 15 V, RL = 25 Ω, 2N7000 10 ns
ID = 500 mA, VGS = 10 V,
RGEN = 25
VDD = 30 V, RL = 150 Ω, 2N700 20
ID = 200 mA, VGS = 10 V, NDS7002A
RGEN = 25 Ω
toff Turn-Off Time VDD = 15 V, RL = 25 Ω, 2N7000 10 ns
ID = 500 mA, VGS = 10 V,
RGEN = 25
VDD = 30 V, RL = 150 Ω, 2N700 20
ID = 200 mA, VGS = 10 V, NDS7002A
RGEN = 25 Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode Forward VGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 V
Voltage
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

2N7000.SAM Rev. A1
 Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A

2 3
VGS = 10V 9.0 V GS =4.0V
8.0 4 .5
, DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
7.0 2 .5 5 .0

RDS(on) , NORMALIZED
1 .5
6 .0
6.0 2
7 .0
1

5.0 1 .5 8 .0
9 .0
10
0 .5
4.0 1
D
I

3.0
0 0 .5
0 1 2 3 4 5 0 0 .4 0 .8 1 .2 1 .6 2
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRA IN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

2 3

V GS = 10V V GS = 10V
DRAIN-SOURCE ON-RESISTANCE

1.75 2 .5
DRAIN-SOURCE ON-RESISTANCE

I D = 500m A
TJ = 1 2 5 ° C
R DS(ON) , NORMALIZED

R DS(on) , NORMALIZED

1.5 2

1.25 1 .5
25°C
1 1
-55°C
0.75 0 .5

0.5 0
-5 0 -2 5 0 25 50 75 100 125 150 0 0 .4 0 .8 1 .2 1 .6 2
TJ , JUNCTION T EMPERATURE (°C) I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain

with Temperature Current and Temperature

2 1 .1
T J = -55°C
VDS = 10V 25°C V DS = VGS
GATE-SOURCE THRESHOLD VOLTAGE

125°C 1 .0 5
1.6 I D = 1 mA
ID , DRAIN CURRENT (A)

Vth , NORMALIZED

1
1.2

0 .9 5

0.8
0 .9

0.4
0 .8 5

0 0 .8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
V , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEM PERATURE (°C)
GS

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

2N7000.SAM Rev. A1
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A

1.1 2
I D = 250µA
DRAIN-SOURCE BREAKDOWN VOLTAGE

1 V GS = 0V
1.075

IS , REVERSE DRAIN CURRENT (A)

0 .5
BV DSS , NORMALIZED

1.05
TJ = 1 2 5 ° C
1.025 0 .1
25°C
0 .0 5
-5 5 ° C
1

0.975 0 .0 1

0 .0 0 5
0.95

0.925
-50 -25 0 25 50 75 100 125 150 0 .0 0 1
0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4
TJ , JUNCTION TEM PERATURE (°C)
V SD , BODY DIODE FORW A RD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage Variation with
with Temperature

60 10

40 VGS , GATE-SOURCE VOLTAGE (V) V DS = 2 5 V

C iss
8
20
CAPACITANCE (pF)

C oss
6
10
ID = 5 0 0 m A

5 4
C rss

f = 1 MHz 2 280m A
2
V GS = 0V
115m A
1 0
1 2 3 5 10 20 30 50 0 0 .4 0 .8 1 .2 1 .6 2
V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

VDD t on t off
t d(on) tr t d(off) tf
V IN RL 90% 90%

D V OUT Output, Vout

10% 10%
VGS Inverted
R GEN DUT
90%
G
Input, Vin 50% 50%

10%
S
Pulse Width

Figure 11. Figure 12. Switching Waveforms

2N7000.SAM Rev. A1
Typical Electrical Characteristics (continued)
3 3
2 2
10
0u
1 1 s
it 10
Lim 0u it 1m

ID , DRAIN CURRENT (A)

) 0.5
I D , DRAIN CURRENT (A)

0.5 s Lim
S( ON N) s
RD S(O
1m RD
s
10 10
ms ms
0.1 10 0.1
0m
s 10
0.05 1s 0.05 0m
V GS = 10V s
10 1s
s VGS = 10V
SINGLE PULSE DC 10
SINGLE PULSE s
T A = 25°C DC
0.01 0.01 T A = 25°C

0.005 0.005
1 2 5 10 20 30 60 80 1 2 5 10 20 30 60 80
V DS , DRAIN-SOURCE VOLTAGE (V) V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 13. 2N7000 Maximum Figure 14. 2N7002 Maximum

Safe Operating Area Safe Operating Area

3
2 it
Lim 10
N) 0u
1 S(O s
RD 1m
s
I D , DRAIN CURRENT (A)

0.5

10
ms
0.1
10
0m
0.05 s
V GS = 10V 1s
10
SINGLE PULSE s
DC
T A = 25°C
0.01

0.005
1 2 5 10 20 30 60 80
V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 15. NDS7000A Maximum

Safe Operating Area

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

R θJA (t) = r(t) * R θJA

0.2 0 .2 R θJA = (See Datasheet)

0.1
0.1 P(pk)
0.05
0.05 t1
0 .02
t2

0.01 TJ - T A = P * RθJA (t)

0.02 Single Pulse
Duty Cycle, D = t1 /t2

0.01
0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (sec)
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 0 .2
R θJA (t) = r(t) * R θJA
0.1 0.1 R θJA = (See Datasheet)

0.05 0 .0 5

0 .0 2 P(pk)

0 .0 1
0.01 t1
t2
Single Pulse
TJ - T A = P * RθJA (t)

0.002 Duty Cycle, D = t1 /t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve

2N7000.SAM Rev. A1
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G