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DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
(in millimeters)
designed for high voltage switching applications.

FEATURES 15.7 MAX. 3.2 ± 0.2


4.7 MAX.
1.5

1.0
• Low On-Resistance
4

7.0
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)

20.0 ± 0.2

4.5 ± 0.2
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)

6.0
1 2 3
• Low Ciss Ciss = 3600 pF TYP.

19 MIN.
• High Avalanche Capability Ratings

3.0 ± 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 2.2 ± 0.2 1.0 ± 0.2
0.6 ± 0.1 2.8 ± 0.1
5.45 5.45
Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V 1. Gate
Gate to Source Voltage VGSS ±30 V 2. Drain
3. Source
Drain Current (DC) ID(DC) ±25 A MP-88 4. Fin (Drain)
Drain Current (pulse)* ID(pulse) ±100 A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (Ta = 25 °C) PT2 3.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 ~ +150 °C Drain
Single Avalanche Current** IAS 25 A
Single Avalanche Energy** EAS 446 mJ
Body
* PW ≤ 10 µs, Duty Cycle ≤ 1 % Diode
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 Gate

The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
Source
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Document No. TC-2505


(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan © 1995
2SK2371/2SK2372

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION


Drain to Source On-Resistance RDS(on) 0.2 0.25 Ω VGS = 10 V 2SK2371
0.22 0.27 ID = 13 A 2SK2372

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA


Forward Transfer Admittance yfs  8.0 S VDS = 10 V, ID = 13 A
Drain Leakage Current IDSS 100 µA VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 nA VGS = ± 30 V, VDS = 0
Input Capacitance Ciss 3600 pF VDS = 10 V
Output Capacitance Coss 700 pF VGS = 0
Reverse Transfer Capacitance Crss 50 pF f = 1 MHz
Turn-On Delay Time td(on) 40 ns ID = 13 A
Rise Time tr 70 ns VGS = 10 V
Turn-Off Delay Time td(off) 160 ns VDD = 150 V
Fall Time tf 60 ns RG = 10 Ω RL = 11.5 Ω
Total Gate Charge QG 95 nC ID = 25 A
Gate to Source Charge QGS 20 nC VDD = 400 V
Gate to Drain Charge QGD 40 nC VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 V IF = 25 A, VGS = 0
Reverse Recovery Time trr 500 ns IF = 25 A, VGS = 0
Reverse Recovery Charge Qrr 4.5 µC di/dt = 50 A/µS

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

D.U.T. D.U.T.
RG = 25 Ω L RL VGS
VGS 90 %
Wave VGS (on)
RG 10 %
0
PG. 50 Ω VDD PG. RG = 10 Ω
Form
VDD
VGS = 20-0 V ID 90 %
90 %
VGS ID ID
BVDSS Wave 0
10 % 10 %
0
IAS Form
ID VDS t td (on) tr td (off) tf
VDD
ton toff
t = 1US
Duty Cycle ≤ 1%
Starting Tch

Test Circuit 3 Gate Charge

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2
2SK2371/2SK2372

TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.


SAFE OPERATING AREA CASE TEMPERATURE
100 210
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - (W)


180
80
150

60 120

90
40
60
20
30

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160


TC - Case Temperature - (°C) TC - Case Temperature - (°C)

DRAIN CURRENT vs.


FORWARD BIAS SAFE OPERATING AREA
DRAIN TO SOURCE VOLTAGE
1 000 20
TA = 25 °C VGS = 10 V 8V Pulsed
Single Pulse
ed
n) L
imit ) ID (pulse) P 6V
RD S = 10 V
ID - Drain Current - (A)

S (o ID - Drain Current - (A)


100 W
=1 15
( VG 10 0µ
0µ s
ID (DC) ID (DC)
s
1m
10 s
10 Po ms 10
we
rD
iss
ipa
tio
1.0 nL 5
im 5V
itd
2SK2371
2SK2372
0.1
1 10 100 1 000 0 5 10 15
VDS - Drain to Source Voltage - (V) VDS - Drain to Source Voltage - (V)

DRAIN CURRENT vs.


GATE TO SOURCE VOLTAGE
100
ID - Drain Current - (A)

10

1 Tch = 125 °C
75 °C
25 °C
–25 °C
0.1
VDS = 10 V
Pulsed
0 5 10 15
VGS - Gate to Source Voltage - (V)

3
2SK2371/2SK2372

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth (t) - Transient Thermal Resistance - (°C/W)


1000

100 Rth (ch-a) = 41.7 °C/W

10

Rth (ch-c) = 0.78 C/W


1.0

0.1

0.01
Tc = 25 °C
Single Pulse
0.001
10 µ 100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - (s)

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

RDS (on) - Drain to Source On-State Resistance - (Ω)


DRAIN CURRENT GATE TO SOURCE VOLTAGE
yfs - Forward Transfer Admittance - (S)

100
Tch = –25 °C Pulsed
1.5
25 °C
75 °C
125°C
10
1.0

ID = 25 A
13 A
1.0 6A
0.5

VDS = 10 V
Pulsed
0.1
1.0 10 100 1000 0 5 10 15 20
ID - Drain Current - (A) VGS - Gate to Source Voltage - (V)

DRAIN TO SOURCE ON-STATE RESISTANCE GATE TO SOURCE CUTOFF VOLTAGE


RDS (on) - Drain to Source On-State Resistance - (Ω)

vs. GATE TO SOURCE VOLTAGE vs. CHANNEL TEMPERATURE


VGS (off) - Gate to Source Cutoff Voltage - V

1.5 4.0

3.5

1.0 3.0

2.5

0.5 2.0
VGS = 10 V
1.5

Pulsed
0 1.0
1.0 10 100 1000 –50 0 50 100 150
ID - Drain Current - (A) Tch - Channel Temperature - (°C)

4
2SK2371/2SK2372

DRAIN TO SOURCE ON-STATE RESISTANCE vs. SOURCE TO DRAIN DIODE

RDS (on) - Drain to Source On-State Resistance - (A)


CHANNEL TEMPERATURE FORWARD VOLTAGE
1.0 100

ISD - Diode Forward Current - (A)


10
VGS = 10 V

0.5 1.0
ID = 25 A VGS = 0 V
13 A
0.1

Pulsed
0 0.01
–50 0 50 100 150 0 0.5 1.0 1.5
Tch - Channel Temperature - (C) VSD - Source to Drain Voltage - (V)

CAPACITANCE vs. DRAIN TO


SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10000 1000

td (on), tr, td (off), tf - Switching Time - (ns)


Ciss tr
Ciss, Coss, Crss - Capacitance - pF

td (off) tf
1 000
100
Coss
100 td (on)

Crss
10
10
VDD = 150 V
VGS = 0 V VGS = 10 V
f = 1 MHz Rin = 10 Ω
1.0 1.0
0.1 1.0 10 100 1000 0.1 1.0 10 100
VDS - Drain to Source Voltage - (V) ID - Drain Current - (A)

REVERSE RECOVERY TIME vs.


REVERSE DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500 20
VDS - Drain to Source Voltage - (V)
tW - Reverse Recovery Time - (ns)

VGS - Gate to Source Voltage - (V)


18
600
400 VDD = 400 V 16
250 V
500 125 V 14
300 12
400
VGS
10
300 200 8

200 6
100 4
100 VDS
di/dt = 50 A/µ s 2
VGS = 0
0
0.1 1.0 10 100 0 20 40 60 80 100 120
IF - Forward Current - (A) Qg - Gate Charge (nC)

5
2SK2371/2SK2372

SINGLE AVALANCHE ENERGY vs. SINGLE AVALANCHE ENERGY vs.


STARTING CHANNEL TEMPERATURE INDUCTIVE LOAD
600 100
EAS - Single Avalanche Energy - (mJ)

IAS < VDD = 150 V

IAS - Single Avalanche Energy - (A)


= 25 A
RG = 25 W RG = 25 Ω
500
VGS = 20 V → 0 VGS = 20 → 0 V
IAS = 25 A
VDD = 150 V
400 EA
S
10 =4
46
300 mJ

200

100
1.0

0
25 50 75 100 125 150 100 µ 1m 10 m 100 m
Starting Tch - Starting Channel Temperature - (°C) L - Inductive load - (H)

6
2SK2371/2SK2372

REFERENCE

Document Name Document No.


NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

7
2SK2371/2SK2372

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11