Beruflich Dokumente
Kultur Dokumente
TO-247 AD (IXFH)
ID25 TC = 25°C 12 A
IDM TC = 25°C, pulse width limited by TJM 48 A
IAR TC = 25°C 12 A G (TAB)
EAR TC = 25°C 30 mJ S
EAS TC = 25°C 1.0 J
G = Gate, D = Drain,
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns S = Source, TAB = Drain
TJ ≤ 150°C, RG = 2 Ω
PD TC = 25°C 300 W
Features
TJ -55 ... +150 °C l
RF capable MOSFETs
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TJM 150 °C Double metal process for low gate
Tstg -55 ... +150 °C resistance
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Rugged polysilicon gate cell structure
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C l
Unclamped Inductive Switching (UIS)
Md Mounting torque TO-247 1.13/10 Nm/lb.in. rated
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Weight TO-247 6 g Low package inductance
TO-268 4 g - easy to drive and to protect
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Fast intrinsic rectifier
Applications
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Symbol Test Conditions Characteristic Values DC-DC converters
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(TJ = 25°C, unless otherwise specified) Switched-mode and resonant-mode
min. typ. max. power supplies, >500kHz switching
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DC choppers
VDSS VGS = 0 V, ID = 1mA 1000 V l
13.5 MHz industrial applications
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VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V Pulse generation
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IGSS VGS = ±20 V, VDS = 0 ±100 nA Laser drivers
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RF amplifiers
IDSS VDS = VDSS 50 µA
Advantages
VGS = 0 V TJ = 125°C 1.5 mA l
Space savings
RDS(on) VGS = 10 V, ID = 0.5 ID25 1.05 Ω l
High power density
Note 1
Ciss 2700 pF
1 2 3 Terminals:
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 305 pF 1 - Gate
2 - Drain
Crss 93 pF 3 - Source
Tab - Drain
td(on) 12 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 9.8 ns
td(off) RG = 2.0 Ω (External) 31 ns
tf 12 ns Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 77 nC A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 16 nC A2 2.2 2.6 .059 .098
Qgd 42 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
RthJC 0.42 K/W C .4 .8 .016 .031
RthCK (TO-247) 0.25 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values ∅P 3.55 3.65 .140 .144
(TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IS V GS = 0 V 12 A
t rr 250 ns
IRM 7 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025