Beruflich Dokumente
Kultur Dokumente
Engineering
RUPESH KUMAR DUTTA
Assistant Professor, ECE Department
COURSE CONTENT: UNIT 2
DIODE AND ITS CIRCUITS:
Introduction to Semiconductor theory: Classification of
materials- Insulators, conductors and semiconductors and
their Energy Bands, Types of semiconductors- Intrinsic,
Extrinsic. PN Junction Diode: Biasing and operation of PN
Diode, V-I characteristics, Limiting Values of PN Diode,
Breakdown in PN Diode,Applications of PN Diode.
Zener Diode: V-I Characteristics, Applications of Zener
Diode. Rectifier Circuits: PN Diode as a Rectifier, Half
Wave Rectifier, Full Wave Rectifier, Full Wave Bridge
Rectifier, Clipping Circuits, Clamper Circuits
III IV V
Boron Carbon
(B) (C)
Aluminum Silicon Phosphorous
(Al) (Si) (P)
Galium Germanium Arsenic
(Ga) (Ge) (As)
Elementary Semiconductors
Si Silicon
Ge Germanium
Compound Semiconductors
Si Si Si
Each Si atom shares one electron with eachSiof its four closest neighbors so that its
valence band will have a full 8 electrons.
6 Assistant Professor Mr. Rupesh Kumar Dutta
EC111: Fundamental of Electronics Engineering Unit II
Types of semiconductors- Intrinsic,
Extrinsic
Si Si Si
+4 +4 +4
Trivalent Dopant
Pentavalent Dopant Si Si Si
+4 +4 +4
Si Si Si
+4 +4 +4
+4 +4 +4 +4 +4 +4
+4 +5 +4 +4 +3 +4
Extrinsic Semiconductor
+4 +4 +4 +4 +4 +4
Overlapping levels
Outer levels begin to interact
Electron energy
11 Assistant Professor Mr. Rupesh Kumar Dutta
EC111: Fundamental of Electronics Engineering Unit II
Energy Bands
The energy difference between the conduction and
valence bands is the “gap energy” We must supply
this much energy to elevate an electron from the
valence band to the conduction band. If Eg is < 2eV,
the material is a semiconductor.
Ev
Ev
SiSi
Si lattice with n-type dopant
Sb
Sb
14 Assistant Professor Mr. Rupesh Kumar Dutta
EC111: Fundamental of Electronics Engineering Unit II
Ec
Ea
Ev
Si
Si lattice with p-type dopant
In
15 Assistant Professor Mr. Rupesh Kumar Dutta
EC111: Fundamental of Electronics Engineering Unit II
The PN Junction
P n
- - - + + +
- - - + + +
P -
-
-
-
-
-
+
+
+
+
+
+ n
- - -
+ + +
- - - + + +
- - - - - - + + + + + +
- - - - - -
- - - - - - + + + + + +
P - - - - - - + + + + + + n
- - - - - -
+ + + + + +
- - - - - -
- - - - - - + + + + + +
Space Charge
ionized Region ionized
acceptors donors
E-Field
Space Charge Region: Also called the depletion region. This region includes the
net positively and negatively charged regions. The space charge region does not
have any free carriers. The width of the space charge region is denoted by W.
ID • VD = Bias Voltage
(mA)
• ID = Current
through Diode. ID
is Negative for
IS Reverse Bias and
Positive for
VBR Forward Bias
VD • IS = Saturation
V Current
• VBR = Breakdown
Voltage
• V = Barrier
Potential Voltage
(µA)
19 Assistant Professor Mr. Rupesh Kumar Dutta
EC111: Fundamental of Electronics Engineering Unit II
V-I Characteristics
(a) diode circuit symbol; (b) i–v characteristic; (c) equivalent circuit in the
reverse direction; (d) equivalent circuit in the forward direction.