Overview to

Power Electronics

Mohd Shawal Bin Jadin

Ext : 2321
A01-2074
shawal@ump.edu.my
 Learning Outcomes
• At the end of the lecture, student
should be able to:
– Identify the function of electronics
switches, hence to select a proper
switching for certain applications.
– Outline the principles of energy recovery
and also to calculate the power for non-
sinusoidal periodic waveform
 Chapter 1
• Definition of Power x1
y1
Load1
y2
Electronics x2 Power Electronic Load2
"Power" Circuit
• Multidisciplinary Nature of xm
yn
Loadn

the Field Electrical f1 f2 fk Electrical or

Inputs
• Block Diagrams of Power "Sources"
Mechanical
Output "Loads"
Feedback
Electronic Systems "Control Circuit"

• The Need for Power

Electronics (input) (output)
Source Side Load Side
• Future Trends
• Types of Power Conversion Power

• Electronic Switch Processing

circuit
Load
(Ploss)
• Switch Selection
• Energy Recovery
 What is Power Electronics?
• Generally:
– Electronics: Solid State Electronics Devices and their
Driving Circuits.
– Power: Static and Dynamic Requirements for Generation,
Conversion and Transmission of Power.
– Control: The Steady State and Dynamic Stability of the
Closed Loop system.
• POWER ELECTRONICS may be defined as the
application of Solid State Electronics for the
Control and conversion of Power.
 Definition of Power Electronics
• DEFINITION:
To convert, i.e to process and control the flow of
electric power by supplying voltages and currents
in a form that is optimally suited for user loads.
 Power Electronics (PE) Systems
• To convert electrical energy from one form to
another, i.e. from the source to load with:
• highest efficiency,
• highest availability
• highest reliability
• lowest cost,
• smallest size
• least weight
 Detailed Block Diagram of Power
Electronics System
Form of elec. or
Power proc. stage Post stage mechan. energy
Pre-stage
Output
Input Filter Filter
Electrical
& PE Circuit & Load
Mechanical
Form of Rectify Rectify
electrical
energy Could generate
undesirable
Mostly waveforms
unregulate
d dc Electrical Variable
Switch
Drives

voltage Feedback
Control
Circuit
Mechanical Variable
Mostly ac line Feedback
voltage (single
or three phase)
Interface between Process feedback
control and power signals and decide
circuits on control
 Applications
• Static applications
– involves non-rotating or moving mechanical
components.
– Examples:
• DC Power supply
• Un-interruptible power supply, Power generation and
transmission
• (HVDC), Electroplating, Welding, Heating,
• Cooling, Electronic ballast
 Applications
• Drive applications
– intimately contains moving or rotating
components such as motors.
– Examples:
• Electric trains, Electric vehicles, Air-conditioning
System, Pumps, Compressor,
• Conveyer Belt (Factory automation).
 Application examples
• Static Application: DC Power Supply
 Application examples
• Drive Application: Air-Conditioning System
 Other Applications

Electroplating, Welding Heating, cooling, CFL

Photovoltaic Systems.
eV (fuel cell, Solar)

Wind-electric systems.
 Conversion concept: example1
• Supply from TNB: 50Hz, 240V RMS (340V peak).
Customer need DC voltage for welding purpose, say.

• TNB sine-wave supply

gives zero DC
component!
• We can use simple half-
wave rectifier. A fixed DC
voltage is now obtained.
This is a simple PE system.

• Average output voltage

1 Power Electonics, PM Dr Zainal Salam, UTM
 Conversion concept: example (Cont)1
• How about if customer wants variable DC voltage?
– More complex circuit using SCR is required.

Average output Voltage

• By controlling the firing angle, α, the output DC voltage

(after conversion) can be varied.

1 Power Electonics, PM Dr Zainal Salam, UTM

 Advantages of Power Electronics
• High energy conversion efficiency
– Instead of using 50/60Hz motor-generator

• Higher Reliability and cost effective

– Less maintenance, longer lifetime, light and small size, fast recovery time, unlimited
range of conversion

• Environmentally clean and safe

– produce no hazardous waste products
– Burning of fossil fuel emits gases such as C,0,, CO (oil burning), S02, NOx (coal
burning) etc. Creates global warming (green house effect), acid raill and urban
pollution h-oll)

• Quite operation
– has no moving parts, suitable for residential, hotels etc

• reduce dependence on fossil fuel (coal, natural gas, oil) and nuclear power resource
(uranium).
– Effort to tap renewable energy resources such as solar, wind, fuel-cell etc. need to be increased.

• Special effort is needed to reduce pollution in cities by enforcing the use of electric
vehicle.
 PE growth
• PE rapid growth due to:
– Advances in power (semiconductor) switches
•
– Advances in microelectronics
(DSP, VLSI, microprocessor /
microcontroller, ASIC)
– New ideas in control algorithms
– Demand for new applications
PE is an interdisciplinary field:
– – Digital/analogue electronics
– – Power
• and energy
– – Microelectronics
– – Control system
– – Computer, simulation and software
– – Solid-state physics and devices
– – Packaging
– – Heat transfer
 Power Electronics Converters

AC to DC: RECTIFIER

DC to DC: CHOPPER

DC to AC: INVERTER

AC to AC: CYCLOCONVERTER
 Power semiconductor devices
(Power switches)
• Can be categorised into three groups:

– Uncontrolled: Diode

– Semi-controlled: Thyristor (SCR)

– Fully controlled: Power transistors e.g.

BJT,MOSFET, IGBT, GTO, IGCT
Photos of Power Switches (From Powerex Inc.)
 Power Electronics Converters

AC to DC: RECTIFIER

DC to DC: CHOPPER

DC to AC: INVERTER

AC to AC: CYCLOCONVERTER
The Need For Switching In Power Electronic Circuits
• The need to use semiconductor switching devices in
power electronic circuits is based on their ability to
control and manipulate very large amounts of power from
the input to the output with relatively very low power
dissipation in the switching device.

• Implication of low efficiency:

1. The cost of energy increases due to increased
consumption.
2. Additional design complications might be imposed,
especially regarding the design of device heat sinks
 Example
Investigate the efficiency of four different power electronic
circuits whose function is to take power from a 24 V dc source
and deliver a 12 V dc output to a 6 resistive load. In other
words, the task of these circuits is to serve as dc transformers
with a ratio of 2 : 1. The four circuits are shown in Fig. 1 (a), (b),
(c), and (d) representing a voltage divider circuit, zener regulator
(assume IZ is 10% of load current), transistor linear regulator, and
switching circuit, respectively. [Hint: For circuit (d), Vo=Vin*D]
 Example (Cont)

(e) Zener diode i-v switching characteristics. (f) Switching waveforms for circuit
 Example (Cont)
• Cicuit (a) : Voltage Divider dc Regulator
• Since Vin=24V and RL=6 and desired Vo=12V.
Hence, R = RL=6.   Pout %  PL %
Pin Pin
Thus,
RL 6
 %  %  50%
RL  R 66

• Cicuit (b) : Zener dc Regulator

• Since desired Vo=12V, hence the blocking voltage for zener diode, VZ
= 12V. IT  I L  I z
Since, RL=6. Thus IL=2A.  2  0.2
Assume that, IZ = 0.2A  2.2 A
(10% of load current) Pin  2.2  24  52.8W
Pout  2  12  24W
Thus,
P 24
  out %  %  45.5%
Pin 52.8
 Example (Cont)
• Cicuit (c) : Transistor dc Regulator

For Vo=12V, it is clear that VCE must be around 12V.

Hence, the control circuit must provide base current, IB to put
transistor in active mode with VCE=12V. For given Vo=12V and
RL=6, thus IL=2A.

Thus, IC = 2A since IB too small in such that to turn on transistor.

Pin  Vin I c  2( 24)  48W

Pdiss  VCE I C  VBE I B
 VCE I C  12  2  24W
Pout 24
  %  %  50%
Pin 48
 Example (Cont)
• Cicuit (d) : Switching dc Regulator
Assume the switch is ideal and periodically turn on and off.
From figure (f), Vo is given by

Ts D
1
Vo , ave 
Ts V
0
in dt  Vin D

• For Vo,ave=12V, hence D=0.5 (Vo,ave=24 x 0.5 =12V)

Since Vin  24V , Pin  I L  Vin  2  24  48W

Due to switching ( assume ideal ),
Pout 48
Pout  Pin ,   %  %  100%
Pin 48
 Ideal Switching Characteristics
1. No limit on the amount of current that the device can
carry when in the conduction state (on-state)
2. No limit on the amount of device voltage (known as
blocking voltage) when the device is in the non-
conduction state (off-state)
3. Zero on-state voltage drop when in the conduction
state
4. Zero leakage current when in the nonconduction
state
5. No limit on the operating speed of the device when it
changes state, i.e., zero rise and fall times
 Ideal Switching Characteristics

Power loss
 The Practical Switch
• The practical switch has the following switching
and conduction characteristics:
1. Limited power-handling capabilities
2. Limited switching speed
3. The existence of forward voltage drop in the on
state, and reverse current flow (leakage) in the
off state
4. Because of characteristics 2 and 3, the practical
switch experiences power losses in the on and
off states (known as conduction loss) and during
switching transitions (known as switching loss)
 Power Diodes

• When diode is forward biased, it conducts current with a

small forward voltage (Vf) across it (0.2-3V)

• When reversed (or blocking state), a negligibly small leakage

current (uA to mA) flows until the reverse breakdown
occurs. Diode should not be operated at reverse voltage
greater than Vr. Thus, higher voltage blocking is needed.
 Power Diode (Reverse Recovery)
• When a diode is switched quickly from forward to
reverse bias, it continues to conduct due to the
minority carriers which remains in the p-n
junction.

• The minority carriers require finite time, i.e, trr

(reverse recovery time) to recombine with
opposite charge and neutralize.

• Effects of reverse recovery are increase in

switching losses, increase in voltage rating, over-
voltage (spikes) in inductive loads
Power Diode (Reverse Recovery)
 Types of Power Diodes

• Line frequency (general purpose) : • Fast recovery

• on state voltage very low
(below 1V)
• large trr (about 25us)
• very high current (up to 5kA)
and voltage (5kV) ratings
• Used in line-frequency
(50/60Hz)
• applications such as rectifiers
• very low trr (<1us).
• Power levels at several
hundred volts and several
hundred amps
• Normally used in high
frequency circuits

• Schottky
• very low forward voltage drop (typical 0.3V)
• limited blocking voltage (50-100V)
• Used in low voltage, high current
• application such as switched mode power
supplies.
 Thyristor based
• Thyristor refers to the family of power semiconductor
devices made of three pn junctions (four layers of pnpn)
that can be latched into the on state through an external
gate signal that causes a regeneration mechanism in the
device.

• Thyristor family currently used in power electronic

circuits:
– The silicon-controlled rectifier (SCR),
– gate turn-off thyristor (GTO),
– triode ac switch (triac),
– static induction transistor (SIT),
– static induction thyristor (SITH),
– and MOS-controlled thyristor (NICT).
 Thyristor (SCR)

• Unlike the diode, the SCR has a third terminal called the "gate" used
for control purposes.
• The holding current is the minimum forward current the SCR can carry
in the absence of a gate drive.
• The forward breakover voltage, VBO, is the voltage across the anode-
cathode terminal that causes the SCR to turn on without the
application of a gate current.
• Reverse avalanche (breakdown) occurs when VAK is negatively large.
 Thyristor (SCR)
• Thyristors can only be turned on with two conditions:
– the device is in forward blocking state (i.e Vak is positive)
– a positive gate current (Ig) is applied at the gate
• Once conducting, the anode current is LATCHED (continuously flowing).

• In reverse - biased mode, the SCR behaves like a diode. It conducts a small
leakage current which is almost dependent of the voltage, but increases with
temperature.

• When the peak reverse voltage is exceeded, avalanche breakdown occurs, and
the large current will flow.

• In the forward biased mode, with no gate current present (i.e. in the
untriggered state), the device exhibits a leakage current.

• If the forward breakover voltage (VBO) is exceeded, the SCR “self-triggers” into
the conducting state and the voltage collapses to the normal forward volt-drop,
typically 1.5-3V. The presence of any gate current will reduce the forward
breakover voltage.
 Thyristor Conduction

How to turn off

thyristor ?
 Thyristor Conduction
• Thyristor cannot be turned off by applying negative
gate current. It can only be turned off if IA goes
negative (reverse)
– This happens when negative portion of the of
sine-wave occurs (natural commutation).

• Another method of turning off is known as “forced

commutation”,
– The anode current is “diverted” to another
circuitry.
 Controllable switches (power transistors)
• Can be turned “ON”and “OFF” by relatively very small control
signals.

• Operated in SATURATION and CUTOFF modes only. No “linear

region” operation is allowed due to excessive power loss.

• In general, power transistors do not operate in latched mode.

• Traditional devices: Bipolar junction transistors (BJT), Metal oxide

silicon field effect transistor ( MOSFET), Insulated gate bipolar
transistors (IGBT), Gate turn-off thyristors (GTO)

• Emerging (new) devices: Gate controlled thyristors (GCT).

 Bipolar Junction Transistor (BJT)

• Ratings: Voltage: VCE<1000, Current: IC<400A. Switching

frequency up to 5kHz. Low on-state voltage: VCE(sat) : 2-3V.
• Low current gain (β). Need high base current to obtain
reasonable IC . (Current driven). Expensive and complex
base drive circuit.
• Not popular in new products.
 BJT Conduction
• The level of IB in the active region just before saturation
must be I
I Bmax  c sat

 dc

• At saturation, the current IC is quite high and the voltage

VCE very low. The resistance across the terminals
determined by VCE sat
Rsat 
I C sat

Saturation conditions and Cutoff conditions and

the resulting terminal resistance the resulting terminal resistance
 Metal Oxide Silicon Field Effect Transistor (MOSFET)

• Ratings: Voltage VDS<500V, current IDS<300A. (Voltage

driven)
• Very fast device: >100KHz. For some low power devices (few
hundred watts) may go up to MHz range.
 MOSFET characteristics
• Turning on and off is very simple. Only need to provide VGS
=+15V to turn on and 0V to turn off. Gate drive circuit is
simple.
• Basically low voltage device. High voltage device are
available up to 600V but with limited current. Can be
paralleled quite easily for higher current capability.

• Internal (dynamic) resistance between drain and source

during on state, RDS(ON), limits the power handling capability
of MOSFET. High losses especially for high voltage device due
to RDS(ON) .

• Dominant in high frequency application (>100kHz). Biggest

application is in switched-mode power supplies.
 Insulated Gate Bipolar Transistor (IGBT)

• Combination of BJT and MOSFET characteristics.

Compromises include:
– Gate behaviour similar to MOSFET - easy to turn on and off.
– Low losses like BJT due to low on-state Collector-Emitter
voltage (2-3V).
 Insulated Gate Bipolar Transistor (IGBT)
• Ratings: Voltage: VCE<3.3kV, Current,: IC<1.2kA currently
available. Work in under progress for 4.5kV/1.2kA device.
Constant improvement in voltage and current ratings.

• Good switching capability (up to 100KHz) for newer devices.

Typical application, IGBT is used at 20-50KHz.

• For very high power devices and applications, frequency is

limited to several KHz.

• Very popular in new products; practically replacing BJT in

most new applications.

• “Snubberless” operation is possible. Most new IGBTs do not

require snubbers.
 Gate turn-off thyristor (GTO)

• Behave like normal thyristor, but can be turned off using

gate signal

• However turning off is difficult. Need very large reverse

gate current (normally 1/5 of anode current)
 Gate turn-off thyristor (GTO)
• Ratings: Voltage: Vak<5kV; Current: Ia<5kA. Highest power ratings
switch. Frequency<5KHz.

• Gate drive design is very difficult. Need very large reverse gate
current to turn off. Often custom-tailored to specific application.

• Currently getting very stiff competition from high power IGBT. The
latter has much simpler and cheaper drivers.

• GTO normally requires snubbers. High power snubbers are

expensive.

• In very high power region (>5kV, >5kA), development in gate-

controlled thyristor (GCT) may effectively end the future of GTO
 Switches comparisons (2000)

Device Type Year made Rated Voltage Rated Current Switching Frequency Rated Power Drive Circuit Comments

SCR 1957 6kV 3.5kA 500Hz 100s MW Simple Cannot turn-off using gate signal

GTO 1962 4.5kV 3kA 2kHz 10s MW Very Difficult King in very high power

BJT 1960s 1.2kV 400A 5kHz 1 MW Difficult Phasing out in new product

Good performance in high

MOSFET 1976 500V 200A 1MHz 100 kW Very Simple
frequency

IGBT 1983 3.3kV 1.2kA 100kHz 100s kW Very Simple Best overall performance
 Application examples
• For each of the following application, choose the best
power switches and reason out why.

1. An inverter for the light-rail train (LRT) locomotive operating from a DC

supply of 750 V. The locomotive is rated at 150 kW. The induction motor
is to run from standstill up to 200 Hz, with power switches frequencies
up to 10KHz.

2. A switch-mode power supply (SMPS) for remote telecommunication

equipment is to be developed. The input voltage is obtained from a
photovoltaic array that produces a maximum output voltage of 100 V
and a minimum current of 200 A. The switching frequency should be
higher than 100kHz.

3. A HVDC transmission system transmitting power of 300 MW from one

ac system to another ac system both operating at 50 Hz, 230 kV rms
line to line and the DC link voltage operating at 200 kV.
Questions?????