PD - 9.

1103B

IRF7204
HEXFET® Power MOSFET
l Adavanced Process Technology A
1 8
S D
l Ultra Low On-Resistance
VDSS = -20V
l P-Channel MOSFET S
2 7
D
l Surface Mount 3 6
S
l Available in Tape & Reel
D RDS(on) = 0.060Ω
4 5
l Dynamic dv/dt Rating G D

l Fast Switching ID = -5.3A

Description To p V ie w
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and S O -8
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -5.3
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -4.2 A
IDM Pulsed Drain Current  -21
PD @TC = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.020 W/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ -1.7 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance Ratings

Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient „ ––– ––– 50 °C/W

8/25/97
IRF7204
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.022 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.060 VGS = -10V, I D = -5.3A ƒ
RDS(ON) Static Drain-to-Source On-Resistance Ω
––– ––– 0.10 VGS = -4.5V, ID = -2.0A ƒ
VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, I D = -250µA
gfs Forward Transconductance ––– 7.9 ––– S V DS = -15V, ID = -5.3A ƒ
––– ––– -25 VDS = -16V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Qg Total Gate Charge ––– 25 ––– I D = -5.3A
Q gs Gate-to-Source Charge ––– 5.0 ––– nC VDS = -10V
Q gd Gate-to-Drain ("Miller") Charge ––– 8.0 ––– VGS = -10V ƒ
t d(on) Turn-On Delay Time ––– 14 30 VDD = -10V
tr Rise Time ––– 26 60 I D = -1.0A
ns
t d(off) Turn-Off Delay Time ––– 100 150 R G = 6.0Ω
tf Fall Time ––– 68 100 RD = 10Ω ƒ
D
LD Internal Drain Inductance ––– 2.5 –––
Between lead,6mm(0.25in.)
nH G
from package and center
LS Internal Source Inductance ––– 4.0 –––
of die contact S

Ciss Input Capacitance ––– 860 ––– VGS = 0V

Coss Output Capacitance ––– 750 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -2.5

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– -15

(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

t rr Reverse Recovery Time ––– 85 100 ns TJ = 25°C, IF = -2.4A
Q rr Reverse RecoveryCharge ––– 77 120 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.

‚ ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS , „ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
 IRF7204

-ID , Drain-to-Source Current ( A )

-ID , Drain-to-Source Current ( A )

-VDS , Drain-to-Source Voltage ( V ) -VDS , Drain-to-Source Voltage ( V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

RDS (on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current ( A )

( Normalized)

-VGS , Gate-to-Source Voltage ( V ) TJ , Junction Temperature ( °C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF7204

-V GS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )

12

-VDS , Drain-to-Source Voltage ( V ) QG , Total Gate Charge ( nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100
-ISD , Reverse Drain Current ( A )

OPERATION IN THIS AREA LIMITED

BY RDS(on)
-II D , Drain Current (A)

10 1ms

10ms

TA = 25 °C
TJ = 150 °C
Single Pulse
1
0.1 1 10 100

-VSD , Source-to-Drain Voltage ( V ) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF7204
RD
6.0 VDS

VGS
5.0 D.U.T.
RG -
+ VDD
-I D , Drain Current (A)

4.0
-10V
Pulse Width ≤ 1 µs
3.0 Duty Factor ≤ 0.1 %

2.0
Fig 10a. Switching Time Test Circuit

td(on) tr t d(off) tf
1.0
VGS
10%
0.0
25 50 75 100 125 150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms

100
(Z thJA )

D = 0.50

10 0.20

0.10
Thermal Response

0.05

0.02 PDM
1
0.01 t1

SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7204

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
 IRF7204
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13.For P-Channel HEXFETS

IRF7204
Package Outline
SO8 Outline

INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20

-C- K .011 .019 0.28 0.48

0.10 (.004) L 6 C
B 8X A1 8X 8X L 0.16 .050 0.41 1.27

0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO8

E X A M P LE : TH IS IS A N IR F 7 101

D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
 IRF7204
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)

T ER M IN A L N U M B E R 1

12 .3 ( .48 4 )
11 .7 ( .46 1 )

8 .1 ( .3 18 )
7 .9 ( .3 12 ) F E ED D IR E C T IO N

N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .

33 0. 00
(12 .99 2)
M A X.

1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.