Beruflich Dokumente
Kultur Dokumente
Jayant Charthad
Stanford University
jayantc@stanford
ΔVin ΔI ΔVout
VCCS R
VDD
Vo
Vi
Id T
1 W 1 W
I D = µCox (Vi − Vt )2 Vo = VDD − µCox (Vi − Vt )2 ⋅ R
2 L 2 L
• Need some sort of "battery" that brings input voltage into useful
operating region
• Define VOV=VI-Vt, "quiescent point gate overdrive"
– VOV=VGS-Vt with no input signal applied
VDD
Vo
VO +ΔVo VO DVo
DVi
I D+ΔId
VI
1 W
VO + ΔVo = VDD − µCox (VOV + ΔVi )2 ⋅ R
2 L
1 W
[
ΔVo = − µCox R ⋅ (VOV + ΔVi )2 − VOV 2
2 L
]
1 W
[
= − µCox R ⋅ 2VOV ΔVi + ΔVi 2
2 L
]
2I & ΔVi #
= − D ⋅ R ⋅ ΔVi $1 + !
VOV % 2VOV "
• As expected, this is a nonlinear relationship
• Nobody likes nonlinear equations; we need a simpler model
– Fortunately, a (1st order) linear approximation to the above
expression is sufficient for 90% of all analog circuit analysis
A. Arbabian, R. Dutton, B. Murmann EE114/214A L03-5
Small Signal Approximation (1)
2I D & ΔVi #
ΔVo = − ⋅ R ⋅ ΔVi $1 + !
VOV % 2VOV "
• Assuming DVi << 2VOV, we have
2I D
ΔVo ≅ − ⋅ R ⋅ ΔVi
VOV
dVo 2I D W
=− ⋅ R = −µCox VOV ⋅ R = Av
dVi Vi =VI
VOV L
Small-signal voltage gain
• Graphical illustration:
Notation:
dVo/dVi = vo/vi = Av
VO
VOV
VI
Quiescent Incremental
Total quantity point value change
Vo = VO + vo
Alternatively:
(IEEE standard)
Quiescent Incremental
Total quantity point value change
vO = VO + vo
A. Arbabian, R. Dutton, B. Murmann EE114/214A L03-8
Small Signal MOS Model
• Fortunately we don't have to repeat this analysis for every single
circuit we build
• Instead, we derive a linearized circuit model for the MOS
transistor and plug it into arbitrary circuits
ID+id id
+
+
VDS +vds gm⋅vgs
+ + vds
-
VGS+vgs vgs -
- Conditions: -
VDS>VGS-Vt
Id vgs<<VGS-Vt id
gm
gm
ID vgs
VGS Vgs
1 W
I D = µCox (VGS − Vt )2
2 L
id ∂I W W
gm = = D = µCox (VGS − Vt ) = µCox VOV
v gs ∂VGS L L
2I D
gm =
VOV
R
VO +ΔVo
I D+ΔId +
+ gm⋅vgs
ΔVi vo
vi vgs -
VI -
• Use large signal I-V law to compute operating point (ID, VO, gm)
– Make sure device operates in proper region; consider
desired “signal swing”
• Now perform rest of calculations in “small-signal land”
– Gain, bandwidth (more later), …
A. Arbabian, R. Dutton, B. Murmann EE114/214A L03-11
Example (1)
VDD
1 µA 20 2
I D = ⋅ 50 2 ⋅ ⋅ (1.5V − 0.5V ) = 500µA
R
2 V 1
VO +vo
VO = 5V − 5kΩ ⋅ 500µA = 2.5V
ID+i d
vi VDS = VO = 2.5V $
# ⇒ Saturation
VI VGS − Vt = VI − Vt = 1V "
R 2I D 2 ⋅ 500µA
gm = = = 1mS
VOV 1.5V − 0.5V
+
+ gm⋅vgs
vo
vi vgs
-
- Av = − g m R = −1mS ⋅ 5kΩ = −5
vdd vdd 0 5
5.5
5
4.5
4
3.5
]
V 3
Vo [V]
[
o 2.5
V
2
1.5
0.5
0
0 1 2 3 4 5
V i [V]
1
]
V
|vo| [V]
[
0.5
|v o
|
0 Av = vo/vi
2 3
10 10
f [Hz] = -0.5V/0.1V
] = -5
Phase (vo) [Degrees]
V
v
[ 300
(
e
) o 200
s
a
100
h
p
0 2 3
10 10
f [Hz]
2.5
2
]
[V]
V
[ 1.5
0.5 Vi
Vo
0
0 0.5 1 1.5 2 2.5 3
t [sec] x 10
-3
3
]
V
[V]
[ 2
0 Vi
Vo
-1
0 0.5 1 1.5 2 2.5 3
t [sec] x 10
-3
10000
9000
8000
7000
]
V 6000
[
|vo| [V]
5000
|v o
| 4000
3000
5000V output!
2000
1000
0 2 3
10 10
f [Hz]