PD- 94239B

IRGPS60B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT
C
VCES = 1200V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. VCE(on) typ. = 2.50V
• 10μs Short Circuit Capability.
• Square RBSOA. G
• Ultrasoft Diode Reverse Recovery Characteristics. @ VGE = 15V,
• Positive VCE (on) Temperature Coefficient.
E
• Super-247 Package.
N-channel ICE = 60A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.

Super-247™
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 105‚
IC @ TC = 100°C Continuous Collector Current 60
ICM Pulsed Collector Current 240 A
ILM Clamped Inductive Load Current  240
IF @ TC = 25°C Diode Continuous Forward Current 120
IF @ TC = 100°C Diode Continuous Forward Current 60
IFM Diode Maximum Forward Current 240
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 595
W
PD @ TC = 100°C Maximum Power Dissipation 238
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.20
RθJC Junction-to-Case - Diode ––– ––– 0.41 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Recommended Clip Force 20 (2) ––– ––– N(kgf)
Wt Weight ––– 6.0 (0.21) ––– g (oz)
Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH
www.irf.com 1
3/10/08
IRGPS60B120KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on) Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V 5, 6
––– 2.50 2.75 V IC = 60A 7, 9
––– 2.79 3.1 IC = 50A, TJ = 125°C 10
––– 3.04 3.5 IC = 60A, TJ = 125°C 11
VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250μA 9,10
ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 11 ,12
gfe Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80μs
ICES Zero Gate Voltage Collector Current ––– ––– 500 μA VGE = 0V, VCE = 1200V
––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C
VFM Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A
––– 1.93 2.20 V IC = 60A 8
––– 1.96 2.20 IC = 50A, TJ = 125°C
––– 2.13 2.40 IC = 60A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig.
Qg Total Gate Charge (turn-on) ––– 340 510 IC = 60A 23
Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V CT1
Qgc Gate - Collector Charge (turn-on) ––– 165 248 VGE = 15V
Eon Turn-On Switching Loss ––– 3214 4870 μJ IC = 60A, VCC = 600V CT4
Eoff Turn-Off Switching Loss ––– 4783 5450 VGE = 15V,RG = 4.7Ω, L =200μH WF1
Etot Total Switching Loss ––– 8000 10320 Ls = 150nH T J = 25°C WF2
Eon Turn-On Switching Loss ––– 5032 6890 T J = 125°C 13,15
Eoff Turn-Off Switching Loss ––– 7457 8385 μJ Energy losses include "tail" and
Etot Total Switching Loss ––– 12500 15275 diode reverse recovery.
td(on) Turn-On Delay Time ––– 72 94 IC = 15A, VCC = 600V 14, 16
tr Rise Time ––– 32 45 VGE = 15V, RG = 4.7Ω L =200μH CT4
td(off) Turn-Off Delay Time ––– 366 400 ns Ls = 150nH, TJ = 125°C WF1
tf Fall Time ––– 45 58 WF2
Cies Input Capacitance ––– 4300 ––– VGE = 0V
Coes Output Capacitance ––– 395 ––– pF VCC = 30V 22
Cres Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz
TJ = 150°C, IC = 240A, Vp =1200V
4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE VClamp = 1000V, VGE = +15V to 0V
CT2
RG = 4.7Ω
TJ = 150°C, Vp =1200V CT3
SCSOA Short Circuit Safe Operting Area 10 ––– ––– μs VCC = 900V, VGE = +15V to 0V,
WF4
RG = 4.7Ω
Erec Reverse Recovery energy of the diode ––– 3346 ––– μJ TJ = 125°C 17,18,19

trr Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200μH 20, 21
Irr Diode Peak Reverse Recovery Current ––– 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH CT4,WF3

2 www.irf.com
 IRGPS60B120KD

140 700
LIMITED BY PACKAGE
120 600

100 500

80

P tot (W)
400
IC (A)

60
300

40
200

20
100

0
0
0 20 40 60 80 100 120 140 160
0 50 100 150 200
T C (°C)
TC (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature† Temperature

1000 1000

100 2 μs

10 μs 100
IC (A)

IC A)

10 100 μs

DC 1ms
10
1 10ms

0.1
1
1 10 100 1000 10000
10 100 1000 10000
VCE (V)
VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJS ≤ 150°C TJ = 150°C; VGE =15V
www.irf.com 3
IRGPS60B120KD
120 120
VGE = 18V VGE = 18V
100 VGE = 15V 100 VGE = 15V
VGE = 12V VGE = 12V
VGE = 10V VGE = 10V
80 80
VGE = 8.0V VGE = 8.0V
ICE (A)

ICE (A)
60 60

40 40

20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs TJ = 25°C; tp = 80μs

120 120

VGE = 18V -40°C

100 VGE = 15V 100 25°C
VGE = 12V 125°C
VGE = 10V 80
80
VGE = 8.0V
ICE (A)

IF (A)

60 60

40 40

20 20

0 0
0 1 2 3 4 5 0 1 2 3
VCE (V) VF (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 125°C; tp = 80μs tp = 80μs
4 www.irf.com
 IRGPS60B120KD
20 20
18 18
16 16
14 14
12 ICE = 30A 12 ICE = 30A
VCE (V)

VCE (V)
10 ICE = 60A 10 ICE = 60A
ICE = 120A ICE = 120A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

20 500

18 450 T J = 25°C
400 T J = 125°C
16
350
14
ICE = 30A 300
VCE (V)

12
ICE (A)

ICE = 60A 250

10 ICE = 120A
200
8
150
6 100 T J = 125°C

4 50 T J = 25°C

2 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 125°C VCE = 50V; tp = 10μs
www.irf.com 5
 IRGPS60B120KD
12000 1000

10000 tdOFF

8000

Swiching Time (ns)

Energy (μJ)

EOFF
6000 100 tdON

tF
4000 EON

2000 tR

0
10
0 20 40 60 80 100
20 40 60 80 100
IC (A)
IC (A)

Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=200μH; VCE= 600V TJ = 125°C; L=200μH; VCE= 600V
RG= 4.7Ω; VGE= 15V RG= 4.7Ω; VGE= 15V

25000 10000

tdOFF
20000
EON
Swiching Time (ns)

1000
Energy (μJ)

15000

tdON
EOFF
10000 tR
100 tF

5000

0 10
0 50 100 150 0 50 100 150
RG (Ω) RG (Ω)

Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 125°C; L=200μH; VCE= 600V TJ = 125°C; L=200μH; VCE= 600V
ICE= 60A; VGE= 15V ICE= 60A; VGE= 15V
6 www.irf.com
 IRGPS60B120KD
70 60
RG = 4.7Ω
60
50

50
40

40 RG = 22 Ω
IRR (A)

IRR (A)
30
30 RG = 47 Ω
20
20 RG = 100 Ω

10
10

0 0
0 20 40 60 80 100 0 50 100 150
IF (A) RG (Ω)

Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 125°C TJ = 125°C; IF = 60A

60 12
RG = 4.7Ω 4.7Ω
11 90A
50 22Ω
10
60A
47 Ω
9
40
RG = 22 Ω 8
Q RR (μC)
IRR (A)

30 7
RG = 47 Ω 100Ω
6 30A
20 5
RG = 100 Ω 4
10
3
2
0
0 500 1000 1500
0 500 1000 1500
diF /dt (A/μs)
diF /dt (A/μs)

Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 600V; VGE= 15V; VCC= 600V; VGE= 15V;TJ = 125°C
ICE= 60A; TJ = 125°C
www.irf.com 7
IRGPS60B120KD
4000

3500

3000

4.7Ω
2500
Energy (μJ)

22Ω
2000
47Ω

1500
100Ω

1000

500

0
0 20 40 60 80 100

IF (A)

Fig. 21 - Typical Diode ERR vs. IF

TJ = 125°C

10000 16
Cies
14 600V

12 800V
1000
Capacitance (pF)

10
VGE (V)

Coes
8

Cres 6
100
4

0
10
0 50 100 150 200 250 300 350 400
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
VCE (V)

Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 60A; L = 600μH
8 www.irf.com
 IRGPS60B120KD
10
Thermal Response ( Z thJC )

D = 0.50

0.20
0.10
0.1
0.05
0.01
Notes:
0.02 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)

10
Thermal Response ( Z thJC )

D = 0.50

0.20
0.10
0.1
0.05
0.01 Notes:
0.02 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 9
IRGPS60B120KD
L

L
VCC
DUT 80 V DUT
0 1000V
1K Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
Driver L

- 5V
D
C 900V DUT /
DRIVER VCC
DUT Rg

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

10 www.irf.com
 IRGPS60B120KD
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-On Loss Waveform
@ Tj=125°C using Fig. CT.4 @ Tj=125°C using Fig. CT.4

900 90 800 120

800 80 700 105
700 70
90% ICE 600 90
TEST CURRENT
600 60
tr 500 75
500 50
400 60
VCE (V)

ICE (A)

VCE (V)

ICE (A)
400 40 90% test current
300 45
300 30
tr 10% test current
200 20 200 30
5% V CE 5% V CE
100 10 100 15
5% ICE
0 0 0 0
Eof f Loss Eon Loss
-100 -10 -100 -15
-0.50 0.50 1.50 2.50 4.10 4.30 4.50 4.70
Time (μs) Time (μs)

Fig. WF.3 - Typ. Diode Recovery

Fig. WF.4 - Typ. S.C. Waveform
Waveform
@ TC=150°C using Fig. CT.3
@ Tj=125°C using Fig. CT.4

1000 500
400 80
900 450
V CE
200 60 800 400
QRR
0 40 700 350
tRR ICE
600 300
-200 20
VCE (V)

ICE (A)

500 250
IF (A)
VF (V)

-400 0 400 200

Peak 300 150

-600 10% -20
IRR
Peak 200 100
IRR
-800 -40 100 50

-1000 -60 0 0
-0.25 0.25 0.75 -5.00 0.00 5.00 10.00 15.00
time (μS)
time (μS)
www.irf.com 11
IRGPS60B120KD
Super-247™ Package Outline

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
12 www.irf.com
 IRGPS60B120KD
Super-247™ Part Marking Information

EXAMPLE: THIS IS AN IRFPS37N50A WITH

ASSEMBLY LOT CODE A8B9 PART NUMBER
INTERNATIONAL RECTIFIER
IRFPS37N50A
LOGO
A8B9 0020

ASSEMBLY LOT CODE DATE CODE

(YYWW)
YY = YEAR
WW = WEEK
TOP

Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100 μH, RG = 4.7Ω.
‚ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/08
www.irf.com 13