1. Determine the thermal voltage for a diode at a temperature of 20°C.

Solution:
Tk=20+273 = 293
2. If 48 eV of energy is required to move a charge through a potential difference of 3.2 V,
determinethe charge involved.
Solution:
48eV=48(1.6x10-19J)=76.8x10-19J
Q=W/V = 76.8x10-19J / 3.2V = 2.4x10-18C (charge associated with 4 electrons)
3. How much energy in joules is required to move a charge of 12 mC through a difference
in potential of 6 V?
Solution:
W = QV = (12 µC)(6 V) = 72 µJ
4. For the same diode of part (a), find the diode current if Is = 40 nA, n =2 (low value of V
D), and the applied bias voltage is 0.5 V.
Solution:
k=11600/2 = 5800
Id=Is(e^(kVd/Tk)-1)
Id=40x10^-9(e^(5800(0.5)/293)-1)
Id= 0.80mA
5. Repeat Problem 4 for T = 100°C (boiling point of water). Assume that I s has increased to
5.0 mA.

Solution:
k = 11,600/n = 11,600/2 = 5800 (n = 2 for VD = 0.6 V)
5800(0.5)
−3(𝑒 373 −1)
𝐼𝑑 = 5𝑥10
Id=11.89A
6. Given a diode current of 8 mA and n = 1, find I s if the applied voltage is 0.5 V and the
temperature is room temperature (25°C).

Solution:
5800(−10)
−3(𝑒 293 −1)
𝐼𝑑 = 0.1𝑥10 k=11600/2=5800 Tk=20+273=293
Id=0.1mA Id=Is=0.1mA
7. Using Eq. (1.2), determine the diode current at 20°C for a silicon diode with n= 2, I s= 0.1
mA at a reverse-bias potential of -10 V.
Solution:
5800(−10)
−3(𝑒 293 −1)
𝐼𝑑 = 0.1𝑥10 k=11600/2=5800 Tk=20+273=293
Id=0.1mA
Id=Is=0.1mA

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Determine the dc resistance levels for the diode of Fig. 1.24 at

8. I D = 2 mA (low level)
9. I D = 20 mA (high level)
10. V D = -10 V (reverse-biased)
Solution:
8. At I D = 2 mA, V D = 0.5 V (from the curve)
RD=VD/ID = 0.5V/2mA = 250Ω
9. At I D = 20 mA, V D = 0.8 V (from the curve) and
RD=VD/ID = 0.8V/20mA = 40Ω
10. At V D = -10 V, ID = - I s = -1 mA (from the curve)
RD=VD/ID = 10V/1µA = 10MΩ
11. 15. Find the range of wavelength for the frequency range of visible light (400 THz–
750 THz).

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12. Determine the voltage across each diode at a current of 1 mA.

13. Repeat for a current of 4 mA.

14. Repeat for a current of 30 mA.

15. Determine the average value of the diode voltage for the range of currents listed above.

Solution:
12. V D (Ge) = 0.2 V, V D (Si) = 0.6 V, V D (GaAs) = 1.1 V3

13. V D (Ge) = 0.3 V, V D (Si) = 0.7 V, V D (GaAs) = 1.2 V

14. V D (Ge) = 0.42 V, V D (Si) = 0.82 V, V D (GaAs) = 1.33 V

15. Ge: V av = (0.2 V = 0.3 V = 0.42 V)/3 = 0.307 V
Si: V av = (0.6 V = 0.7 V = 0.82 V)/3 = 0.707 V
GaAs: V av = (1.1 V = 1.2 V = 1.33 V)/ 3 = 1.21 V

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16. Determine V o , I 1 , ID1, and ID2 for the parallel diode configuration of Fig. 2.28 .

17-19. For the series diode configuration of Fig. 2.13 , determine V D , V R , and I D .

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 20. Determine the currents I1 , I 2 , and ID2 for the network of Fig. 2.37

21. Determine the reference voltages provided by the network of Fig. 2.109 , which uses a
white LED to indicate that the power is on. What is the level of current through the LED
and the power delivered by the supply?

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22. Determine v o for the network of Fig. 2.93 for the input indicated.

Solution:
-20 V + VC - 5 V = 0
VC = 25 V
+10 V + 25 V - vo = 0
vo = 35 V

23. Repeat Problem 22 using a silicon diode with V K = 0.7 V.

Solution:
+5 V - 0.7 V - vo = 0
vo = 5 V - 0.7 V = 4.3 V
-20 V + VC + 0.7 V - 5 V = 0
VC = 25 V - 0.7 V = 24.3 V
+10 V + 24.3 V - vo = 0
vo = 34.3 V

24. How does the power absorbed by the LED compare to that of the 6-V Zener diode?

Solution:
Ps = EIs = EIR = (40 V)(20 mA) = 800 mW
PLED = VLED ILED = (4 V)(20 mA) = 80 mW
PZ = VZ IZ = (6 V)(20 mA) = 120 mW
power absorbed by the Zener diode exceeds that of the LED by 40 mW.

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25. Determine the saturation current (ICsat) for the network

26-29. For the Zener diode network of Fig. 2.115 , determine V L , V R , I Z , and P Z .

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 30. Repeat above problem with RL = 3 kΩ

PZ = VZ IZ = (10 V)(2.67 mA) = 26.7 mW

31. Determine the range of values of Vi that will maintain the Zener diode of Figure below on
“on” state.
Solution:

32. Find the percentage increase in the reverse saturation current of a diode if the temperature
is
increased from 25C to 50C.
Solution:

33. Find the voltage VZ across the Zener diode of Fig. 2-20(a) if iZ = 10mA and it is known that
VZ = 5:6V, IZ = 25 mA, and RZ= 10Ω.
Solution:
vZ = VZ + iZRZ = 5:6 + (10 x10-3)(10)=5.7V

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34. At a junction temperature of 258C, over what range of forward voltage drop vD can (2.1) be
approximated as iD =Ioevd/Vt with less than 1 percent error for a Ge diode?
Solution:

35-36. Determine the quiescent levels of ICQ and VCEQ for the network below.
Solution:

37-38. Determine the dc level of IB and VC for the network below.

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39-45. For the network of Figure below
(a) Determine ICQ and VCEQ.
(b) Find VB, VC, VE, and VBC.

46-47. Determine VC and VB for the network of Figure below.

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48-49. Determine VCEQ and IE for the network of Figure below

50-51. Determine the voltage VCB and the current IB for the common-base configuration of the
figure below

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52-53. Determine VC and VB for the network of Figure below

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54-55. Given that ICQ = 2 mA and VCEQ = 10 V, determine R1 and RC for the network of Figure
below

56-58. The emitter-bias configuration of the figure below has the following specifications:
ICQ =1/2ICsat, ICsat = 8 mA, VC= 18 V, and B = 110. Determine RC, RE, and RB.

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59-61. Determine the resistor values for the network below for the indicated operating point
and supply voltage.

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62-64. Determine the levels of RC, RE, R1, and R2 for the network of Fig. 4.51 for the operating
point indicated.

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65-66. Determine RB and RC for the transistor inverter of the figure below if ICsat = 10 mA.

67. Determine VCE for the voltage-divider bias configuration of the figure below

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68-70. Calculate the stability factor and the change in IC from 25°C to 100°C for the transistor
defined by following emitter-bias arrangements.
(a) RB/RE _ 250 (RB _ 250RE)
(b) RB/RE _ 10 (RB _ 10RE).
(c) RB/RE _ 0.01 (RE _ 100RB).
Solution:

71-73. Determine the stability factor S(VBE) and the change in IC from 25°C to 100°C for
the transistor defined the following bias arrangements.
(a) Fixed-bias with RB = 240 k and B _ 100.
(b) Emitter-bias with RB = 240 k, RE = 1 k, and B = 100.
(c) Emitter-bias with RB = 47 k, RE = 4.7 k, and B = 100.

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74. Determine ICQ at a temperature of 100°C if ICQ = 2 mA at 25°C. where B1 = 50 and B2 = 80,
and a resistance ratio RB/RE of 20Ω.

75-80. For the fixed-bias configuration of the figure below determine:

(a) IBQ.
(b) ICQ.
(c) VCEQ.
(d) VC.
(e) VB.
(f) VE.

81-84. Given the information appearing in the figure below, determine:

(a) IC.
(b) RC.
(c) RB.
(d) VCE.

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85-90. For the emitter-stabilized bias circuit of the figure below, determine:
(a) IBQ.
(b) ICQ.
(c) VCEQ.
(d) VC.
(e) VB.
(f) VE.

91-95. Given the information provided in Figure,

Determine
(a) RC.
(b) RE.
(c) RB.
(d) VCE.
(e) VB.

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96-99. Given the information appearing in the figure given, determine:
(a) IC.
(b) VCC.
(c) B.
(d) RB.

100. Find the saturation current (ICsat) for the fixed-bias configuration of the above figure.

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