Ordering number : ENN7684

2SJ656
P-Channl Silicon MOSFET

2SJ656

General-Purpose Switching Device

Features Package Dimensions

• Low ON-resistance. unit : mm
• Ultrahigh-speed switching. 2063A
• 4V drive. [2SJ656]
4.5
• Motor drive, DC / DC converter. 10.0 2.8
3.2

3.5
7.2
16.0
18.1
2.4

5.6
1.6
1.2

14.0
0.7
0.75

1 2 3
1 : Gate
2.55 2.55 2 : Drain

2.4
3 : Source
Specifications 2.55 2.55 SANYO : TO-220ML
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --18 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --72 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C 30 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --100 V
Zero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance yfs VDS=--10V, ID=--9A 14 20 S
Marking : J656 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504QA TS IM TA-100801 No.7684-1/4
 2SJ656

Continued from preceding page.

Ratings
Parameter Symbol Conditions Unit
min typ max
RDS(on)1 ID=--9A, VGS=--10V 58 75.5 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--9A, VGS=--4V 74 104 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 4200 pF
Output Capacitance Coss VDS=--20V, f=1MHz 280 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 220 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 30 ns
Rise Time tr See specified Test Circuit. 110 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 340 ns
Fall Time tf See specified Test Circuit. 128 ns
Total Gate Charge Qg VDS=--50V, VGS=--10V, ID=--18A 74 nC
Gate-to-Source Charge Qgs VDS=--50V, VGS=--10V, ID=--18A 12.8 nC
Gate-to-Drain“Miller”Charge Qgd VDS=--50V, VGS=--10V, ID=--18A 14.7 nC
Diode Forward Voltage VSD IS=--18A, VGS=0 --0.93 --1.2 V

Switching Time Test Circuit

VIN VDD= --50V

0V
--10V
ID= --9A
VIN RL=5.56Ω
D VOUT
PW=10µs
D.C.≤1%
G

2SJ656
P.G 50Ω S

ID -- VDS ID -- VGS
--40 --40
Tc=25°C VDS= --10V
C
0V

V
--6
25°
--1

--4V
25°C
75°C

--30 --30
Drain Current, ID -- A
Drain Current, ID -- A

--
Tc=

--20 --20

--10 VGS= --3V --10

°C 5°C

°C
2

--25
Tc=
75

0 0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06626 Gate-to-Source Voltage, VGS -- V IT06627

No.7684-2/4
 2SJ656
RDS(on) -- VGS RDS(on) -- Tc
140 140
ID= --9A
On-State Resistance, RDS(on) -- mΩ

On-State Resistance, RDS(on) -- mΩ

120 120

--4V
100 100

V G S= V
Tc=75°C , --10
80 --9A
S=
80
Static Drain-to-Source

Static Drain-to-Source
I D= , V G
25°C --9A
60 60 I D=
--25°C
40 40

20 20

0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT06628 Case Temperature, Tc -- °C IT06629
yfs -- ID IF -- VSD
100 --100
VDS= --10V 7 VGS=0
5
Forward Transfer Admittance, yfs -- S

7
3
5 2

Forward Drain Current, IF -- A

--10
7
3 5
3
2 °C 2
25 --1.0
7
5°
C 5

--25°C
--2

°C
10

25°C
3
= 2
Tc

5
°C

Tc=7
7
75 --0.1
7
5 5
3
2
3
--0.01
2 7
5
3
2
1.0 --0.001
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 --0.3 --0.6 --0.9 --1.2 --1.5
Drain Current, ID -- A IT06630 Diode Forward Voltage, VSD -- V IT06631
SW Time -- ID Ciss, Coss, Crss -- VDS
1000 10000
VDD= --50V f=1MHz
7 7
VGS= --10V
5 td(off) 5 Ciss
Switching Time, SW Time -- ns

3 3
Ciss, Coss, Crss -- pF

2 2
tf
100 1000

7
tr 7
5 5
td(on)
3 3 Coss
2 2
Crss
10 100
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 --5 --10 --15 --20 --25 --30
Drain Current, ID -- A IT06632 Drain-to-Source Voltage, VDS -- V IT06633
VGS -- Qg ASO
--10 2
VDS= --50V
--9 ID= --18A --100 IDP= --72A <10µs
Gate-to-Source Voltage, VGS -- V

7 10
--8 5 µs
3
10
ID= --18A 0µ
Drain Current, ID -- A

--7 2 s
1m
--6 --10 s
10
7
10 ms
--5 5 0m
3 DC s
--4 2 op
era
Operation in this area tio
--3 --1.0
is limited by RDS(on). n
7
--2 5
3
--1 2 Tc=25°C
0 --0.1
Single pulse
0 10 20 30 40 50 60 70 80 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2
Total Gate Charge, Qg -- nC IT06634 Drain-to-Source Voltage, VDS -- V IT06635

No.7684-3/4
 2SJ656
PD -- Ta PD -- Tc
2.5 40

Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W

35
2.0
30

25
1.5

20

1.0
15

10
0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT06636 Case Temperature, Tc -- °C IT06637

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of April, 2004. Specifications and information herein are subject
to change without notice.

PS No.7684-4/4
Mouser Electronics

Authorized Distributor

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2SJ656