Optical Amplifier EDFA

optical signal in 1.5 μm band are shown in Figure 1(a). In

I. INTRODUCTION
Optical amplifiers have played a leading role in the evolution
of telecommunications over the course of the past decade.
With the increasing need for higher transfer speeds and greater
quantity of transferred data, the optical cable lines are
reaching their limits of transfer capacities. One of the options
for more effective usage of optical lines is wavelength
multiplexing. Using a transfer speed of 10 Gbps (STM-64)
with the help of WDM, 128 spectral channels achieving a
transfer speed of 1 Tbps could be created in one optical fiber.
Because transferring of the optical signal over great distances
leads to its attenuation, the transmission path contains optical
amplifiers. In optical communication the EDFA fiber
amplifiers, SOA semiconductor amplifiers, or amplifiers based
on the Raman Effect are the most widely used ones. These
optical amplifiers prevents signal attenuation and its cost
effective than WDM
Figure 1(a) metastable level is 4I13/2 which can be utilized
either directly on 1480 nm or through the level of 4I11/2 on
980 nm. The lifespan of an ion on level 4I11/2 is very short
(approximately 7 μs) in comparison with the lifespan on level
4
I13/2 (approximately 10 ms), so the ion excited to the level
4
I11/2 goes quickly through to the metastable level
4
I13/2. Individual levels are marked according to the Russell-
Saunders convention based on the quantum atomic theory.
Expansion of levels shown in Figure 2(b) illustrated the shape
of the absorption and emission transition spectrum
4
I15/2↔ 4I13/2 in erbium doped optical fiber [13]

II. LITERATURE REVIEW

In this section theory of EDFA, Raman and SOA is

discussed.
A. EDFA
An EDFA is an optical or IR repeater that amplifies a
modulated laser beam directly, without opto-electronic and
electro-optical conversion. Generally speaking, it is an optical
repeater device that is used to boost the intensity of optical
signals being carried through a fiber optic communications
system. EDFA serves as a kind of optical amplifier which is
doped with the rare earth element erbium so that the glass
Figure 1: (a) Energy levels of erbium and (b) absorption and emission
fiber can absorb light at one frequency and emit light at spectrum of transition 4I15/2↔ 4I13/2.
another frequency. An external semiconductor laser couples The inseparable part is a pair of optical isolators where the
light into the fiber at infrared wavelengths of either 980 or isolator prevents the radiation created by spontaneous
1480 nanometers. This action excites the erbium atoms. emission which corrupts the amplification at input. The second
Additional optical signals at wavelengths between 1530 and isolator at the output prevents the transmission of laser rays
1620 nanometers enter the fiber and stimulate the excited and consequently any possible damage to the amplifier itself
erbium atoms to emit photons at the same wavelength as the as the rays are reflected back into the amplifier (Figure 2). A
incoming signal. This action amplifies a weak optical signal to combination of several key factors made the EDFA amplifier
a higher power, affecting a boost in the signal strength. The choice number one for today’s optical communication systems
following picture shows 13dBm output C-band 40 channels based on the WDM technology. Its most important factors are
booster EDFA for DWDM Networks. the following: compact and highly effective semiconductor
EDFA consists of a fibre doped by erbium ions of the energy laser pumps, polarizing independence, simplicity of the
level Er3+. Energy levels important for the amplification of the
device, and the nonexistence of mutual cross-talk while
amplifying the WDM signals.
Figure 2: Schematic of EDFA Connection
B. Raman Amplifier
A Raman amplifier is an optical amplifier based on Raman
gain, which results from the effect of stimulated Raman
scattering. The Raman-active medium is often an optical fiber,
although it can also be a bulk crystal, a waveguide in a
photonic integrated circuit, or a cell with a gas or liquid
medium. An input signal can be amplified while co- or counter
propagating with a pump beam, the wavelength of which is
typically a few tens of nanometers shorter. For silica fibers,
maximum gain is obtained for a frequency offset of ≈ 10–15
THz between pump and signal, depending on the composition
of the fiber core. A telecom Raman amplifier is pumped with
continuous-wave light from a diode laser. Efficient
amplification of ultra-short pulses is also possible using
propagating pump pulses. However, the phenomenon of group
velocity mismatch then severely limits the useful interaction
length, particularly for pulse durations below 1 ps. Fibers used
for Raman amplifiers are not doped with rare earth ions. In
principle, any ordinary single-mode fiber could be used, and in
practice the transmission fibers themselves are often suitable
(→ distributed amplifiers). However, there are special fibers
with increased Raman gain, resulting from certain dopants
(e.g. germania) for enhanced Raman cross sections, or simply
from a small effective mode area. Such fibers are used for
lumped Raman amplifiers, where a shorter piece of fiber is
dedicated to amplification only.[] A Raman amplifier uses the
effect of Raman scattering. For this purpose, light with high
power and a corresponding wavelength is pumped into the
fiber. Amplification is performed if the
incoming wavelength lies within the Raman gain spectrum.
Figure 3: Schematic of Raman Connection
C. Semiconductor Optical Amplifier (SOA)
A semiconductor optical amplifier works in a similar way to a
basic laser. The structure is much the same, with two specially
designed slabs of semiconductor material on top of each other,
with another material in between them forming the “active
layer.” An electrical current is set running through the device
in order to excite electrons, which can then fall back to the
non-excited ground state and give out photons (“particles” of
light).
But there are two key differences. In a standard laser we want
very reflective ends to keep light bouncing back and forth
within the cavity. So the laser car has a rear-view mirror. With
a semiconductor amplifier we need to get the optical signals
straight into the cavity and then straight back out again, so we
want to avoid light reflecting back into the cavity. This means
that we do not want mirrors on the ends, and a semiconductor
optical amplifier car has fuzzy dice obscuring the rear-view
mirror. Also, in lasers we only want to get light out at one
specific wavelength, and we design the device to make this
possible (especially in Distributed Feedback —DFB —
lasers). In a semiconductor amplifier we want to amplify light
at as many wavelengths as possible. This is because we will
have an incoming optical network signal that may have many
different wavelengths that all need to be amplified at the same
time.
 of EDFA is its size is not small and can’t be integrated
with other semiconductor devices. Raman Amplifier is
suitable for variable wavelength amplification. Its
compatible with installed SM fiber and can be used to
extend EDFAs. It can result in a lower average power
over a span, good for lower crosstalk and very broadband
operation may be possible. Key disadvantages of Raman
Amplifier are:
 High pump power requirements, high pump power
lasers have only recently arrived
 Sophisticated gain control needed
 Noise is also an issue

The semiconductor optical amplifier is of small size and

electrically pumped. It can be potentially less expensive than
the EDFA and can be integrated with semiconductor lasers,
modulators, etc. All four types of nonlinear operations (cross
gain modulation, cross phase modulation, wavelength
conversion and four wave mixing) can be conducted. SOA can
be run with a low power laser. This originates from the short
nanosecond or less upper state lifetime, so that the gain reacts
rapidly to changes of pump or signal power and the changes of
Figure 4: Schematic of SOA gain also cause phase changes which can distort the signals.
Disadvantages of SOA are the performance of SOA is still not
The excited electrons in the semiconductor are comparable with the EDFA. The SOA has higher noise, lower
now stimulated by incoming light from optical gain, moderate polarization dependence and high nonlinearity
signals to move down to their ground states. The with fast transient time.
photon given out by an electron losing energy
from its excited state exactly matches the photon
that caused the emission in the first place. IV. SUMMARY
Therefore, there are now two photons representing Property EDFA Raman SOA
one particular section of a signal where previously
there was only one — hence, the signal has been Gain (dB) > 40 > 25 >30
amplified. These two photons can now cause more
stimulated emission as they travel down the
Wavelength (nm) 1530- 1560 1280- 1650 1280-
device, until they all exit together as a successfully
1650
amplified signal. Semiconductor amplifiers do not
currently give as much amplification as erbium Bandwidth (3dB) 30-60 Pump 60
doped-fiber amplifiers (EDFAs) can at the dependent
common 1550-nanometer region of wavelengths. Max. Saturation 22 0.75 x pump 18
However, they can be designed to amplify around {dBm)
the 1300nm transmission window, which may see Polarization No No Yes
them used in networks that use such wavelengths. Sensitivity
In fact, as the demand for more wavelengths Noise Figure 5 5 8
grows, systems may use both the 1300nm and (dB)
1550nm regions and semiconductor amplifiers Pump Power 25 dBm >30 dBm < 400 mA
may have an important role to play in such
systems. Time Constant 10-2 s 10-1s s 2 x 10-9

III. REVIEW
Size Rack mounted Bulk module Compact

EDFA has high pump power utilization (>50%), directly Switchable No No Yes
and simultaneously amplify a wide wavelength band
(>80nm) in the 1550nm region, with a relatively flat gain. Cost Factor Medium High Low
EDFA’s Flatness can be improved by gain-flattening
optical filters. It’s Gain in excess of 50 dB. Low noise
figure is suitable for long haul applications. Disadvantage