Ordering number : EN5531C 2SK2632LS

SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET

2SK2632LS General-Purpose Switching Device

Applications
Features
• Low ON-resistance.
• Low Qg.
• Ultrahigh-speed switching.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 800 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID 2.5 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 7.5 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C 25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 800 V
Zero-Gate Voltage Drain Current IDSS VDS=800V, VGS=0V 1.0 mA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance ⏐yfs⏐ VDS=10V, ID=1.3A 0.7 1.4 S
Static Drain-to-Source On-State Resistance RDS(on) ID=1.3A, VGS=15V 3.6 4.8 Ω
Marking : K2632 Continued on next page.

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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10908QB TI IM TC-00001123 / N2000TS (KOTO) TA-3034 No.5531-1/4

 2SK2632LS
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Input Capacitance Ciss VDS=20V, f=1MHz 550 pF
Output Capacitance Coss VDS=20V, f=1MHz 150 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 70 pF
Total Gate Charge Qg VDS=200V, ID=2.5A, VGS=10V 15 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time tr See specified Test Circuit. 15 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 45 ns
Fall Time tf See specified Test Circuit. 23 ns
Diode Forward Voltage VSD IS=2.5A, VGS=0V 0.84 1.2 V

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7509-002
PW=1μs
VDD=200V
D.C.≤0.5%
10.0 4.5
3.2 ID=1.3A
2.8
VGS=15V RL=154Ω
3.5
7.2

D VOUT
16.0
16.1

G
0.6

0.9
3.6

1.2 1.2
RGS=50Ω 2SK2632LS
P.G
14.0

0.75 0.7
S

1 2 3 1 : Gate
2 : Drain
2.4

3 : Source

2.55 2.55 SANYO : TO-220FI(LS)

ID -- VDS ID -- VGS
6 4.0
VDS=10V
15V 3.5 Tc= --25°C
5
10V
3.0
Drain Current, ID -- A

Drain Current, ID -- A

4 25°C
8V 2.5

3 2.0
75°C
1.5
2
7V
1.0

1
VGS=6V 0.5

0 0
0 10 20 30 40 50 0 5 10 15 20
Drain-to-Source Voltage, VDS -- V IT00743 Gate-to-Source Voltage, VGS -- V IT00744

No.5531-2/4
 2SK2632LS
RDS(on) -- VGS RDS(on) -- Tc
10 10
Tc=25°C
9 9

On-State Resistance, RDS(on) -- Ω

On-State Resistance, RDS(on) -- Ω

8 8

7 7

.3A
6 6
=1
.3A

Static Drain-to-Source
I D
Static Drain-to-Source

,
5 ID =2.5A 5 0V =1
=1 , I D
S 5V
4 1.3A 4 VG =1
S
0.5A VG
3 3

2 2

1 1

0 0
0 2 4 6 8 10 12 14 16 18 20 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT00745 Case Temperature, Tc -- °C IT00746

10
⏐yfs⏐ -- ID VGS(off) -- Tc
7
VDS=10V VDS=10V
Forward Transfer Admittance, ⏐yfs⏐ -- S

7
ID=1mA

Gate-to-Source Voltage, VGS(off) -- V

5 6

3 C
5° 5
2 = --2
Tc
4
1.0
7 3

5
2 5°C
2
C
3 75°
2 1

0.1 0
0.1 2 3 5 7 1.0 2 3 5 7 10 --50 0 50 100 150
Drain Current, ID -- A IT00747 Case Temperature, Tc -- °C IT00748
SW Time -- ID 100
IS -- VSD
1000
VDD=200V 7 VGS=0V
7 5
5 VGS=15V 3
2
Switching Time, SW Time -- ns

3
10
2 7
5
Source Current, IS -- A

3
100 2
7 1.0
5 td(off) 7
5
3 tf 3
2
2
td(on) 0.1
7
10 tr 5
7 3
2
5
0.01
5°C

3 7
5
°C
25°C
7

2 3
Tc=

--25

2
1.0 0.001
0.1 2 3 5 7 1.0 2 3 5 7 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Drain Current, ID -- A IT00749 Diode Forward Voltage, VSD -- V IT00750
Ciss, Coss, Crss -- VDS Forward Bias A S O
1000 2
f=1MHz
7 10 IDP=7.5A <10μs
Ciss
5 7
5
ID=2.5A 10
3 3 0μ
Drain Current, ID -- A

s
Ciss, Coss, Crss -- pF

Coss 2 1m
2 s
1.0 10
Crss 7 DC 100 ms
100 5 op ms
3
era
7 tio
2 n
5 Operation in
0.1
this area is
3 7
5 limited by RDS(on).
2 3
2 Tc=25°C
10 0.01
Single pulse
0 5 10 15 20 25 30 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Drain-to-Source Voltage, VDS -- V IT00751 Drain-to-Source Voltage, VDS -- V IT00752

No.5531-3/4
 2SK2632LS
PD -- Ta PD -- Tc
Allowable Power Dissipation, PD -- W 3.0 30

Allowable Power Dissipation, PD -- W

2.5 25

2.0 20

1.5 15

1.0 10

0.5 5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT00754 Case Temperature, Tc -- °C IT00753

Note on usage : Since the 2SK2632LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
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This catalog provides information as of January, 2008. Specifications and information herein are subject
to change without notice.

PS No.5531-4/4