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2SK168

Silicon N-Channel Junction FET

2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 3 2

Application

VHF Amplifier, Mixer, Local oscillator

Outline

TO-92 (2)

3 2
3
2

1

1. Gate

2. Source

3. Drain

FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 3 2 1 1. Gate 2.

2SK168

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

 

Unit

Gate to drain voltage

V GDO

–30

 

V

Gate to source voltage

V GSS

–1

V

Gate current

I G

10

mA

Drain current

I D

20

mA

Channel power dissipation

Pch

200

 

mW

Channel temperature

Tch

150

 

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

 

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Gate to drain breakdown voltage

V (BR)GDO

–30

V

I G = –100 µA, I S = 0

Gate cutoff current

I GSS

–10

nA

V GS = –0.5 V, V DS = 0

Drain current

I DSS * 1

4

20

mA

V DS = 5 V, V GS = 0

Gate to source cutoff voltage

V GS(off)

–3.0

V

V DS = 5 V, I D = 10 µA

Forward transfer admittance

|y fs |

8

10

mS

V DS = 5 V, V GS = 0, f = 1 kHz

Input capacitance

Ciss

6.8

pF

V DS = 5 V, V GS = 0, f = 1 MHz

Reverse transfer capacitance

Crss

0.1

pF

V DS = 5 V, V GS = 0, f = 1 MHz

Power gain

PG

27

dB

V DS = 5 V, V GS = 0,

 

f

= 100 MHz

Noise figure

NF

1.7

dB

V DS = 5 V, V GS = 0,

f = 100 MHz

Note:

DEF

1.

The 2SK168 is grouped by I DSS as follows.

4 to 8

6 to 12

10 to 20

5 V, V G S = 0, f = 100 MHz Note: DEF 1. The 2SK168

2SK168

Maximum Channel Power Dissipation Curve

300 200 100 Channel Power Dissipation Pch (mW)
300
200
100
Channel Power Dissipation Pch (mW)

0 50 100

150

Ambient Temperature Ta (°C)

Typical Output Characteristics (1)

Pch = 200 mW 10 V = 0 GS 8 –0.2 V 6 –0.4 4
Pch = 200 mW
10
V
= 0
GS
8
–0.2 V
6
–0.4
4
–0.6
–0.8
2
–1.0
0
10
20
30
40
50
Drain Current I D (mA)

Drain to Source Voltage V DS (V)

Typical Output Characteristics (2)

10 V = 0 GS 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0
10
V
= 0
GS
8
–0.2 V
6
–0.4
4
–0.6
2
–0.8
–1.0
Drain Current I D (mA)

Typical Transfer Characteristics

15 V = 5 V DS 10 F E 5 D 0 Drain Current I
15
V
= 5 V
DS
10
F
E
5
D
0
Drain Current I D (mA)

0

1

2

345 –3.0

–2.0

–1.0

0

Drain to Source Voltage V DS (V)

Gate to Source Voltage V GS (V)

2 345 –3.0 –2.0 –1.0 0 Drain to Source Voltage V D S (V) Gate to

2SK168

Forward Transfer Admittance vs. Drain to Source Voltage

15 Ta = –25°C 25°C 75°C 10 5 V = 0 GS f = 1
15
Ta =
–25°C
25°C
75°C
10
5
V
= 0
GS
f
= 1
kHz
0
5 10
15
Forward Transfer Admittance y fs
(mS)

Drain to Source Voltage V DS (V)

Input Capacitance vs. Drain to Source Voltage

20 V = 0 GS f = 1 MHz 10 5 2 0.1 0.2 0.5
20
V
=
0
GS
f
= 1
MHz
10
5
2
0.1
0.2
0.5
1.0
2
5
10
Input Capacitance C iss (pF)

Drain to Source Voltage V DS (V)

Forward Transfer Admittance vs. Drain Current 50 20 10 5 V 5 V 2 DS
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
V
5 V
2
DS =
f
=
1
kHz
1.0
0.5
0.2 0.5
1.0
2
5
10
20
Forward Transfer Admittance y fs
(mS)

Drain Current I D (mA)

Reverse Transfer Capacitance vs. Drain to Source Voltage

5 V GS = 0 2 f = 1 MHz 1.0 0.5 0.2 0.1 0.05
5
V
GS = 0
2
f
=
1 MHz
1.0
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
2
5
10
Reverse Transfer Capacitance C rss (pF)

Drain to Source Voltage V DS (V)

0.05 0.1 0.2 0.5 1.0 2 5 10 Reverse Transfer Capacitance C rss (pF) Drain to

2SK168

Output Capacitance vs. Drain to Source Voltage

200 V 100 GS = 0 f = 1 MHz 50 20 10 5 2
200
V
100
GS = 0
f
=
1 MHz
50
20
10
5
2
0.1
0.2
0.5
1.0
2
5
10
Output Capacitance C oss (pF)

Drain to Source Voltage V DS (V)

Power Gain vs. Drain Current

30 E F D 20 V = 5 V 10 DS f = 100 MHz
30
E
F
D
20
V
= 5 V
10
DS
f
= 100 MHz
V
Variable
GS
0
2
4
6
8
10
12
14
16
Power Gain PG (dB)

Drain Current I D (mA)

Power Gain vs. Drain to Source Voltage

30 20 V GS = 0 f = 100 MHz 10 0 5 10 15
30
20
V
GS = 0
f
=
100 MHz
10
0
5 10
15
Power Gain PG (dB)

Drain to Source Voltage V DS (V)

Noise Figure vs. Drain to Source Voltage

8 V 0 GS = f = 100 MHz 6 4 2 0 4 8
8
V
0
GS =
f
= 100 MHz
6
4
2
0
4
8
12
16
Noise Figure NF (dB)

Drain to Source Voltage V DS (V)

8 V 0 GS = f = 100 MHz 6 4 2 0 4 8 12

2SK168

Input and Output Admittance vs. Frequency

5 g is = g is +jb is y is = g y os os
5
g is
= g is +jb is
y is
=
g
y os
os +jb os
2
V DS = 5 V
b is 10
I D = 10
mA
1.0
10
b os
g os
0.5
0.2
0.1
0.05
50 100
200
500
Input Admittance y is (mS)
Output Admittance y os (mS)

Frequency f (MHz)

Transfer Admittance vs. Frequency

50 V DS = 5 V I D = 10 mA 20 g fs 10
50
V
DS = 5 V
I D = 10
mA
20
g
fs
10
–b fs
5
–10
b
rs
+jb fs
2
y fs = g fs
10 g
rs
y
= g rs +jb fs
rs
1.0
0.5
50 100
200
500
Forward Transfer Admittance y fs (mS)
Reverse Transfer Admittance y rs (mS)

Frequency f (MHz)

Input and Output Admittance vs. Drain Current

Transfer Admittance vs. Drain Current

5 b os 2 g is 1.0 b 10 is 0.5 V = 5 V
5
b
os
2
g
is
1.0
b
10
is
0.5
V
= 5
V
y
= g is +jb is
0.2
DS
is
f
=
100
MHz
y
=
g
os
os +jb os
0.1
g
os is Negligible
Small at This
Frequency
0.05
Input Admittance y is (mS)
Output Admittance y os (mS)
50 V DS = 5 V f = 100 MHz 20 g fs 10 –b
50
V
DS = 5 V
f
= 100 MHz
20
g
fs
10
–b fs
5
–100
b
rs
2
100
g
rs
1.0
y
g
fs =
fs +jb fs
y
g
rs =
rs +jb rs
0.5
Forward Transfer Admittance y fs (mS)
Reverse Transfer Admittance y rs (mS)

0.5

1.0

5

Drain Current I D (mA)

2

10

20

50 0.5

1.0

5

Drain Current I D (mA)

2

10

20

50

1.0 5 Drain Current I D (mA) 2 10 20 50 0.5 1.0 5 Drain Current

2SK168

Power Gain and Noise Figure Test Circuit

Shield 5.4 3.0 D.U.T. 50 L 2 4,700 C 1 L 1 C 2 V.V
Shield
5.4 3.0
D.U.T.
50
L 2
4,700
C 1
L 1
C 2
V.V
SG Output
50
1,000
S.G.
Impedance
Unit R :
C : pF
V DD

C 1 , C 2 : 0 to 30 pF Variable Air L 1 : 3.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia. L 2 : 4.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia.

1 mm Copper Ribbon, Tin plated 10 mm Inside dia. L 2 : 4.5 T 1

Unit: mm

4.8 ± 0.3 3.8 ± 0.3 0.60 Max 0.45 ± 0.1 0.5 1.27 2.54 Hitachi
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
TO-92 (2)
JEDEC
Conforms
EIAJ
Conforms
Weight (reference value)
0.25 g
0.7
2.3 Max
12.7 Min
5.0 ± 0.2

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits.
Hitachi, Ltd.
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URL

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

(2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed