Beruflich Dokumente
Kultur Dokumente
Am29F400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation ■ Top or bottom boot block configurations
— 5.0 volt-only operation for read, erase, and available
program operations ■ Embedded Algorithms
— Minimizes system level requirements — Embedded Erase algorithm automatically
■ Manufactured on 0.35 µm process technology preprograms and erases the entire chip or any
combination of designated sectors
— Compatible with 0.5 µm Am29F400 device
— Embedded Program algorithm automatically
■ High performance writes and verifies data at specified addresses
— Access times as fast as 55 ns
■ Minimum 1,000,000 program/erase cycles per
■ Low power consumption (typical values at 5 sector guaranteed
MHz) ■ Package option
— 1 µA standby mode current — 48-pin TSOP
— 20 mA read current (byte mode) — 44-pin SO
— 28 mA read current (word mode)
■ Compatibility with JEDEC standards
— 30 mA program/erase current
— Pinout and software compatible with single-
■ Flexible sector architecture power-supply Flash
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and — Superior inadvertent write protection
seven 64 Kbyte sectors (byte mode)
■ Data# Polling and toggle bits
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Provides a software method of detecting
seven 32 Kword sectors (word mode)
program or erase operation completion
— Supports full chip erase
■ Ready/Busy# pin (RY/BY#)
— Sector Protection features:
— Provides a hardware method of detecting
A hardware method of locking a sector to
program or erase cycle completion
prevent any program or erase operations within
that sector ■ Erase Suspend/Erase Resume
Sectors can be locked via programming — Suspends an erase operation to read data from,
equipment or program data to, a sector that is not being
Temporary Sector Unprotect feature allows code erased, then resumes the erase operation
changes in previously locked sectors ■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
GENERAL DESCRIPTION
The Am29F400B is a 4 Mbit, 5.0 volt-only Flash algorithm—an internal algorithm that automatically
memory organized as 524,288 bytes or 262,144 words. preprograms the array (if it is not already pro-
The device is offered in 44-pin SO and 48-pin TSOP grammed) before executing the erase operation. Dur-
packages. The word-wide data (x16) appears on ing erase, the device automatically times the erase
DQ15–DQ0; the byte-wide (x8) data appears on DQ7– pulse widths and verifies proper cell margin.
DQ0. This device is designed to be programmed in-
The host system can detect whether a program or
system with the standard system 5.0 volt VCC supply.
erase operation is complete by observing the RY/BY#
A 12.0 V VPP is not required for write or erase opera-
pin, or by reading the DQ7 (Data# Polling) and
tions. The device can also be programmed in standard
DQ6/DQ2 (toggle) status bits. After a program or
EPROM programmers.
erase cycle has been completed, the device is ready to
This device is manufactured using AMD’s 0.35 µm read array data or accept another command.
process technology, and offers all the features and ben-
The sector erase architecture allows memory sectors
efits of the Am29F400, which was manufactured using
to be erased and reprogrammed without affecting the
0.5 µm process technology.
data contents of other sectors. The device is fully
The standard device offers access times of 55, 60, 70, erased when shipped from the factory.
90, 120, and 150 ns, allowing high speed microproces-
Hardware data protection measures include a low
sors to operate without wait states. To eliminate bus
VCC detector that automatically inhibits write opera-
contention the device has separate chip enable (CE#),
tions during power transitions. The hardware sector
write enable (WE#) and output enable (OE#) controls.
protection feature disables both program and erase
The device requires only a single 5.0 volt power sup- operations in any combination of the sectors of mem-
ply for both read and write functions. Internally gener- ory. This can be achieved via programming equipment.
ated and regulated voltages are provided for the
program and erase operations. The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
The device is entirely command set compatible with the or program data to, any sector that is not selected for
JEDEC single-power-supply Flash standard. Com- erasure. True background erase can thus be achieved.
mands are written to the command register using
standard microprocessor write timings. Register con- The hardware RESET# pin terminates any operation
tents serve as input to an internal state-machine that in progress and resets the internal state machine to
controls the erase and programming circuitry. Write reading array data. The RESET# pin may be tied to the
cycles also internally latch addresses and data needed system reset circuitry. A system reset would thus also
for the programming and erase operations. Reading reset the device, enabling the system microprocessor
data out of the device is similar to reading from other to read the boot-up firmware from the Flash memory.
Flash or EPROM devices. The system can place the device into the standby mode.
Device programming occurs by executing the program Power consumption is greatly reduced in this mode.
command sequence. This initiates the Embedded AMD’s Flash technology combines years of Flash
Program algorithm—an internal algorithm that auto- memory manufacturing experience to produce the
matically times the program pulse widths and verifies highest levels of quality, reliability and cost effectiveness.
proper cell margin. The device electrically erases all bits within a sector
Device erasure occurs by executing the erase com- simultaneously via Fowler-Nordheim tunneling. The
mand sequence. This initiates the Embedded Erase data is programmed using hot electron injection.
2 Am29F400B
PRELIMINARY
BLOCK DIAGRAM
RY/BY# DQ0–DQ15 (A-1)
VCC
Sector Switches
VSS
Erase Voltage Input/Output
RESET# Generator Buffers
WE# State
Control
BYTE#
Command
Register PGM Voltage
Generator
Chip Enable Data
Output Enable STB Latch
CE#
OE# Logic
Y-Decoder Y-Gating
STB
Address Latch
A0–A17
21505C-1
Am29F400B 3
PRELIMINARY
CONNECTION DIAGRAMS
A15 1 48 A16
A14 2 47 BYTE#
A13 3 46 VSS
A12 4 45 DQ15/A-1
A11 5 44 DQ7
A10 6 43 DQ14
A9 7 42 DQ6
A8 8 41 DQ13
NC 9 40 DQ5
NC 10 39 DQ12
WE# 11 38 DQ4
RESET# 12 37 VCC
NC 13 36 DQ11
NC 14 35 DQ3
RY/BY# 15 34 DQ10
NC 16 33 DQ2
A17 17 32 DQ9
A7 18 31 DQ1
A6 19 30 DQ8
A5 20 29 DQ0
A4 21 28 OE#
A3 22 27 VSS
A2 23 26 CE#
A1 24 25 A0
A16 1 48 A15
BYTE# 2 47 A14
VSS 3 46 A13
DQ15/A-1 4 45 A12
DQ7 5 44 A11
DQ14 6 43 A10
DQ6 7 42 A9
DQ13 8 41 A8
DQ5 9 40 NC
DQ12 10 39 NC
DQ4 11 38 WE#
VCC 12 37 RESET#
DQ11 13 36 NC
DQ3 14 35 NC
DQ10 15 34 RY/BY#
DQ2 16 33 NC
DQ9 17 32 A17
DQ1 18 31 A7
DQ8 19 30 A6
DQ0 20 29 A5
OE# 21 28 A4
VSS 22 27 A3
CE# 23 26 A2
A0 24 25 A1
21505C-2
4 Am29F400B
PRELIMINARY
CONNECTION DIAGRAMS
SO
NC 1 44 RESET#
RY/BY# 2 43 WE#
A17 3 42 A8
A7 4 41 A9
A6 5 40 A10
A5 6 39 A11
A4 7 38 A12
A3 8 37 A13
A2 9 36 A14
A1 10 35 A15
A0 11 34 A16
CE# 12 33 BYTE#
VSS 13 32 VSS
OE# 14 31 DQ15/A-1
DQ0 15 30 DQ7
DQ8 16 29 DQ14
DQ1 17 28 DQ6
DQ9 18 27 DQ13
DQ2 19 26 DQ5
DQ10 20 25 DQ12
DQ3 21 24 DQ4
DQ11 22 23 VCC
21505C-3
Am29F400B 5
PRELIMINARY
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the elements below.
Am29F400B T -55 E C
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
E = 48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
F = 48-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR048)
S = 44-Pin Small Outline Package (SO 044)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory
5.0 Volt-only Read, Program, and Erase
Am29F400BT-70,
Am29F400BB-70
EC, EI, EE,
Am29F400BT-90,
FC, FI, FE,
Am29F400BB-90
SC, SI, SE
Am29F400BT-120,
Am29F400BB-120
Am29F400BT-150,
Am29F400BB-150
6 Am29F400B
PRELIMINARY
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Note: See the sections on Sector Protection and Temporary Sector Unprotect for more information.
Word/Byte Configuration device data outputs. The device remains enabled for
read access until the command register contents are
The BYTE# pin controls whether the device data I/O
altered.
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in See “Reading Array Data” for more information. Refer
word configuration, DQ15–DQ0 are active and control- to the AC Read Operations table for timing specifica-
led by CE# and OE#. tions and to Figure 9 for the timing diagram. ICC1 in the
DC Characteristics table represents the active current
If the BYTE# pin is set at logic ‘0’, the device is in byte
specification for reading array data.
configuration, and only data I/O pins DQ0–DQ7 are ac-
tive and controlled by CE# and OE#. The data I/O pins Writing Commands/Command Sequences
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function. To write a command or command sequence (which in-
cludes programming data to the device and erasing
Requirements for Reading Array Data sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power For program operations, the BYTE# pin determines
control and selects the device. OE# is the output con- whether the device accepts program data in bytes or
trol and gates array data to the output pins. WE# should words. Refer to “Word/Byte Configuration” for more in-
remain at VIH. The BYTE# pin determines whether the formation.
device outputs array data in words or bytes.
An erase operation can erase one sector, multiple sec-
The internal state machine is set for reading array data tors, or the entire device. Tables 2 and 3 indicate the
upon device power-up, or after a hardware reset. This address space that each sector occupies. A “sector ad-
ensures that no spurious alteration of the memory con- dress” consists of the address bits required to uniquely
tent occurs during the power transition. No command is select a sector. The “Command Definitions” section
necessary in this mode to obtain array data. Standard has details on erasing a sector or the entire chip, or
microprocessor read cycles that assert valid addresses suspending/resuming the erase operation.
on the device address inputs produce valid data on the
Am29F400B 7
PRELIMINARY
After the system writes the autoselect command se- In the CMOS and TTL/NMOS-compatible DC Charac-
quence, the device enters the autoselect mode. The teristics tables, ICC3 represents the standby current
system can then read autoselect codes from the inter- specification.
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this RESET#: Hardware Reset Pin
mode. Refer to the “Autoselect Mode” and “Autoselect The RESET# pin provides a hardware method of reset-
Command Sequence” sections for more information. ting the device to reading array data. When the RE-
ICC2 in the DC Characteristics table represents the ac- SET# pin is driven low for at least a period of tRP, the
tive current specification for the write mode. The “AC device immediately terminates any operation in
Characteristics” section contains timing specification progress, tristates all output pins, and ignores all
tables and timing diagrams for write operations. read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
Program and Erase Operation Status chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is ready
During an erase or program operation, the system may
to accept another command sequence, to ensure data
check the status of the operation by reading the status
integrity.
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation Current is reduced for the duration of the RESET#
Status” for more information, and to “AC Characteris- pulse. When RESET# is held at VIL, the device enters
tics” for timing diagrams. the TTL standby mode; if RESET# is held at VSS±0.5
V, the device enters the CMOS standby mode.
Standby Mode
The RESET# pin may be tied to the system reset cir-
When the system is not reading or writing to the device, cuitry. A system reset would thus also reset the Flash
it can place the device in the standby mode. In this memory, enabling the system to read the boot-up
mode, current consumption is greatly reduced, and the firmware from the Flash memory.
outputs are placed in the high impedance state, inde-
pendent of the OE# input. If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the in-
The device enters the CMOS standby mode when the ternal reset operation is complete, which requires a
CE# and RESET# pins are both held at VCC ± 0.5 V. time of tREADY (during Embedded Algorithms). The
(Note that this is a more restricted voltage range than system can thus monitor RY/BY# to determine whether
VIH.) The device enters the TTL standby mode when the reset operation is complete. If RESET# is asserted
CE# and RESET# pins are both held at VIH. The device when a program or erase operation is not executing
requires standard access time (tCE) for read access (RY/BY# pin is “1”), the reset operation is completed
when the device is in either of these standby modes, within a time of tREADY (not during Embedded Algo-
before it is ready to read data. rithms). The system can read data tRH after the RE-
The device also enters the standby mode when the RE- SET# pin returns to VIH.
SET# pin is driven low. Refer to the next section, “RE- Refer to the AC Characteristics tables for RESET# pa-
SET#: Hardware Reset Pin”. rameters and to Figure 10 for the timing diagram.
If the device is deselected during erasure or program-
ming, the device draws active current until the Output Disable Mode
operation is completed. When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high imped-
ance state.
8 Am29F400B
PRELIMINARY
Autoselect Mode
The autoselect mode provides manufacturer and de- the sector address must appear on the appropriate
vice identification, and sector protection verification, highest order address bits (see Tables 2 and 3). Table
through identifier codes output on DQ7–DQ0. This 4 shows the remaining address bits that are don’t care.
mode is primarily intended for programming equipment When all necessary bits have been set as required, the
to automatically match a device to be programmed with programming equipment may then read the corre-
its corresponding programming algorithm. However, sponding identifier code on DQ7–DQ0.
the autoselect codes can also be accessed in-system
To access the autoselect codes in-system, the host
through the command register.
system can issue the autoselect command via the
When using programming equipment, the autoselect command register, as shown in Table 5. This method
mode requires VID (11.5 V to 12.5 V) on address pin does not require VID. See “Command Definitions” for
A9. Address pins A6, A1, and A0 must be as shown in details on using the autoselect mode.
Table 4. In addition, when verifying sector protection,
Am29F400B 9
PRELIMINARY
01h
X
(protected)
Sector Protection Verification L L H SA X VID X L X H L
00h
X
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both pro- START
gram and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and
erase operations in previously protected sectors. RESET# = VID
Sector protection/unprotection must be implemented (Note 1)
using programming equipment. The procedure re-
quires a high voltage (VID) on address pin A9 and OE#. Perform Erase or
Details on this method are provided in a supplement, Program Operations
publication number 20185. Contact an AMD represent-
ative to obtain a copy of this document.
RESET# = VIH
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an Temporary Sector
Unprotect Completed
AMD representative for details. (Note 2)
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
21505C-5
Temporary Sector Unprotect Notes:
This feature allows temporary unprotection of previ- 1. All protected sectors unprotected.
ously protected sectors to change data in-system. The 2. All previously protected sectors are protected once
Sector Unprotect mode is activated by setting the RE- again.
SET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the Figure 1. Temporary Sector Unprotect Operation
sector addresses. Once VID is removed from the RE-
SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and Hardware Data Protection
Figure 18 shows the timing diagrams, for this feature.
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 5 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
10 Am29F400B
PRELIMINARY
spurious system level signals during VCC power-up and Write Pulse “Glitch” Protection
power-down transitions, or from system noise. Noise pulses of less than 5 ns (typical) on OE#, CE# or
Low VCC Write Inhibit WE# do not initiate a write cycle.
When VCC is less than VLKO, the device does not ac- Logical Inhibit
cept any write cycles. This protects data during VCC Write cycles are inhibited by holding any one of OE# =
power-up and power-down. The command register and VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
all internal program/erase circuits are disabled, and the CE# and WE# must be a logical zero while OE# is a
device resets. Subsequent writes are ignored until VCC logical one.
is greater than V LKO. The system must provide the
proper signals to the control pins to prevent uninten- Power-Up Write Inhibit
tional writes when VCC is greater than VLKO. If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or se- Reset Command
quences into the command register initiates device op-
Writing the reset command to the device resets the de-
erations. Table 5 defines the valid register command
vice to reading array data. Address bits are don’t care
sequences. Writing incorrect address and data val-
for this command.
ues or writing them in the improper sequence resets
the device to reading array data. The reset command may be written between the se-
quence cycles in an erase command sequence before
All addresses are latched on the falling edge of WE# or
erasing begins. This resets the device to reading array
CE#, whichever happens later. All data is latched on
data. Once erasure begins, however, the device ig-
the rising edge of WE# or CE#, whichever happens
nores reset commands until the operation is complete.
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section. The reset command may be written between the se-
quence cycles in a program command sequence be-
Reading Array Data fore programming begins. This resets the device to
The device is automatically set to reading array data reading array data (also applies to programming in
after device power-up. No commands are required to Erase Suspend mode). Once programming begins,
retrieve data. The device is also ready to read array however, the device ignores reset commands until the
data after completing an Embedded Program or Em- operation is complete.
bedded Erase algorithm. The reset command may be written between the se-
After the device accepts an Erase Suspend command, quence cycles in an autoselect command sequence.
the device enters the Erase Suspend mode. The sys- Once in the autoselect mode, the reset command must
tem can read array data using the standard read tim- be written to return to reading array data (also applies
ings, except that if it reads at an address within erase- to autoselect during Erase Suspend).
suspended sectors, the device outputs status data. If DQ5 goes high during a program or erase operation,
After completing a programming operation in the Erase writing the reset command returns the device to read-
Suspend mode, the system may once again read array ing array data (also applies during Erase Suspend).
data with the same exception. See “Erase Sus-
pend/Erase Resume Commands” for more information Autoselect Command Sequence
on this mode.
The autoselect command sequence allows the host
The system must issue the reset command to re-ena- system to access the manufacturer and devices codes,
ble the device for reading array data if DQ5 goes high, and determine whether or not a sector is protected.
or while in the autoselect mode. See the “Reset Com- Table 5 shows the address and data requirements. This
mand” section, next. method is an alternative to that shown in Table 4, which
is intended for PROM programmers and requires VID
See also “Requirements for Reading Array Data” in the
on address bit A9.
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame- The autoselect command sequence is initiated by
ters, and Figure 9 shows the timing diagram. writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
Am29F400B 11
PRELIMINARY
12 Am29F400B
PRELIMINARY
The system can determine the status of the erase op- When the Embedded Erase algorithm is complete, the
eration by using DQ7, DQ6, DQ2, or RY/BY#. See device returns to reading array data and addresses are
“Write Operation Status” for information on these sta- no longer latched. The system can determine the sta-
tus bits. When the Embedded Erase algorithm is com- tus of the erase operation by using DQ7, DQ6, DQ2, or
plete, the device returns to reading array data and RY/BY#. (Refer to “Write Operation Status” for informa-
addresses are no longer latched. tion on these status bits.)
Figure 3 illustrates the algorithm for the erase opera- Figure 3 illustrates the algorithm for the erase opera-
tion. See the “Erase/Program Operations” tables in “AC tion. Refer to the “Erase/Program Operations” tables in
Characteristics” for parameters, and to Figure 14 for the “AC Characteristics” section for parameters, and to
timing diagrams. Figure 14 for timing diagrams.
Am29F400B 13
PRELIMINARY
START
Write Erase
Command Sequence
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
21505C-7
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
14 Am29F400B
PRELIMINARY
Cycles
Command
Sequence First Second Third Fourth Fifth Sixth
(Note 1) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0
Word 555 2AA 555
Manufacturer ID 4 AA 55 90 X00 01
Byte AAA 555 AAA
Autoselect (Note 8)
Legend:
X = Don’t care PD = Data to be programmed at location PA. Data latches on the
RA = Address of the memory location to be read. rising edge of WE# or CE# pulse, whichever happens first.
RD = Data read from location RA during read operation. SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A17–A12 uniquely select any sector.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
1. See Table 1 for description of bus operations. 8. The fourth cycle of the autoselect command sequence is a
2. All values are in hexadecimal. read cycle.
3. Except when reading array or autoselect data, all bus cycles 9. The data is 00h for an unprotected sector and 01h for a
are write operations. protected sector. See “Autoselect Command Sequence” for
more information.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles. 10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
5. Address bits A17–A11 are don’t cares for unlock and mode. The Erase Suspend command is valid only during a
command cycles, unless PA or SA required. sector erase operation.
6. No unlock or command cycles required when reading array 11. The Erase Resume command is valid only during the Erase
data. Suspend mode.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
Am29F400B 15
PRELIMINARY
16 Am29F400B
PRELIMINARY
RY/BY#: Ready/Busy# Table 6 shows the outputs for Toggle Bit I on DQ6. Fig-
ure 5 shows the toggle bit algorithm. Figure 16 in the
The RY/BY# is a dedicated, open-drain output pin that
“AC Characteristics” section shows the toggle bit timing
indicates whether an Embedded Algorithm is in
diagrams. Figure 17 shows the differences between
progress or complete. The RY/BY# status is valid after
DQ2 and DQ6 in graphical form. See also the subsec-
the rising edge of the final WE# pulse in the command
tion on “DQ2: Toggle Bit II”.
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
DQ2: Toggle Bit II
pull-up resistor to VCC.
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
If the output is low (Busy), the device is actively erasing cates whether a particular sector is actively erasing
or programming. (This includes programming in the (that is, the Embedded Erase algorithm is in progress),
Erase Suspend mode.) If the output is high (Ready), or whether that sector is erase-suspended. Toggle Bit
the device is ready to read array data (including during II is valid after the rising edge of the final WE# pulse in
the Erase Suspend mode), or is in the standby mode. the command sequence.
Table 6 shows the outputs for RY/BY#. Figures 10, Fig- DQ2 toggles when the system reads at addresses
ure 13 and Figure 14 shows RY/BY# for reset, pro- within those sectors that have been selected for eras-
gram, and erase operations, respectively. ure. (The system may use either OE# or CE# to control
the read cycles.) But DQ2 cannot distinguish whether
DQ6: Toggle Bit I the sector is actively erasing or is erase-suspended.
Toggle Bit I on DQ6 indicates whether an Embedded DQ6, by comparison, indicates whether the device is
Program or Erase algorithm is in progress or complete, actively erasing, or is in Erase Suspend, but cannot dis-
or whether the device has entered the Erase Suspend tinguish which sectors are selected for erasure. Thus,
mode. Toggle Bit I may be read at any address, and is both status bits are required for sector and mode infor-
valid after the rising edge of the final WE# pulse in the mation. Refer to Table 6 to compare outputs for DQ2
command sequence (prior to the program or erase op- and DQ6.
eration), and during the sector erase time-out.
Figure 5 shows the toggle bit algorithm in flowchart
During an Embedded Program or Erase algorithm op- form, and the section “DQ2: Toggle Bit II” explains the
eration, successive read cycles to any address cause algorithm. See also the “DQ6: Toggle Bit I” subsection.
DQ6 to toggle. The system may use either OE# or CE# Figure 16 shows the toggle bit timing diagram. Figure
to control the read cycles. When the operation is com- 17 shows the differences between DQ2 and DQ6 in
plete, DQ6 stops toggling. graphical form.
After an erase command sequence is written, if all sec-
Reading Toggle Bits DQ6/DQ2
tors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array Refer to Figure 5 for the following discussion. When-
data. If not all selected sectors are protected, the Em- ever the system initially begins reading toggle bit sta-
bedded Erase algorithm erases the unprotected sec- tus, it must read DQ7–DQ0 at least twice in a row to
tors, and ignores the selected sectors that are determine whether a toggle bit is toggling. Typically, the
protected. system would note and store the value of the toggle bit
after the first read. After the second read, the system
The system can use DQ6 and DQ2 together to deter- would compare the new value of the toggle bit with the
mine whether a sector is actively erasing or is erase- first. If the toggle bit is not toggling, the device has com-
suspended. When the device is actively erasing (that is, pleted the program or erase operation. The system can
the Embedded Erase algorithm is in progress), DQ6 read array data on DQ7–DQ0 on the following read cy-
toggles. When the device enters the Erase Suspend cle.
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing However, if after the initial two read cycles, the system
or erase-suspended. Alternatively, the system can use determines that the toggle bit is still toggling, the sys-
DQ7 (see the subsection on “DQ7: Data# Polling”). tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
If a program address falls within a protected sector, then determine again whether the toggle bit is toggling,
DQ6 toggles for approximately 2 µs after the program since the toggle bit may have stopped toggling just as
command sequence is written, then returns to reading DQ5 went high. If the toggle bit is no longer toggling,
array data. the device has successfully completed the program or
DQ6 also toggles during the erase-suspend-program erase operation. If it is still toggling, the device did not
mode, and stops toggling once the Embedded Pro- complete the operation successfully, and the system
gram algorithm is complete. must write the reset command to return to reading
array data.
Am29F400B 17
PRELIMINARY
The remaining scenario is that the system initially de- DQ5: Exceeded Timing Limits
termines that the toggle bit is toggling and DQ5 has not
DQ5 indicates whether the program or erase time has
gone high. The system may continue to monitor the
exceeded a specified internal pulse count limit. Under
toggle bit and DQ5 through successive read cycles, de-
these conditions DQ5 produces a “1.” This is a failure
termining the status as described in the previous para-
condition that indicates the program or erase cycle was
graph. Alternatively, it may choose to perform other
not successfully completed.
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine The DQ5 failure condition may appear if the system
the status of the operation (top of Figure 5). tries to program a “1” to a location that is previously pro-
grammed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has ex-
START ceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
Read DQ7–DQ0 data.
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
21505C-9
18 Am29F400B
PRELIMINARY
Am29F400B 19
PRELIMINARY
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for ± 5% devices . . . . . . . . . . .+4.75 V to +5.25 V
VCC for ± 10% devices . . . . . . . . . . . .+4.5 V to +5.5 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
20 Am29F400B
PRELIMINARY
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter Description Test Conditions Min Typ Max Unit
ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ±1.0 µA
ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ±1.0 µA
VCC
VIH Input High Voltage 2.0 V
+0.5
VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC min 0.45 V
VOH Output High Voltage IOH = –2.5 mA, VCC = VCC min 2.4 V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Not 100% tested.
Am29F400B 21
PRELIMINARY
DC CHARACTERISTICS
CMOS Compatible
Parameter Description Test Conditions Min Typ Max Unit
0.7 x VCC+
VIH Input High Voltage V
VCC 0.3
VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC min 0.45 V
0.85
VOH1 IOH = –2.5 mA, VCC = VCC min V
VCC
Output High Voltage
VCC–
VOH2 IOH = –100 µA, VCC = VCC min
0.4
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program is in progress.
3. Not 100% tested.
4. ICC3 = 20 µA max at extended temperature (>+85° C).
22 Am29F400B
PRELIMINARY
TEST CONDITIONS
Table 7. Test Specifications
5.0 V
All
Test Condition -55 others Unit
2.7 kΩ
Device Output Load 1 TTL gate
Under
Test Output Load Capacitance, CL
30 100 pF
(including jig capacitance)
CL 6.2 kΩ
Input Rise and Fall Times 5 20 ns
Steady
Changing from H to L
Changing from L to H
KS000010-PAL
Am29F400B 23
PRELIMINARY
AC CHARACTERISTICS
Read Operations
Parameter Speed Option
JEDEC Std Description Test Setup -55 -60 -70 -90 -120 -150 Unit
CE# = VIL
tAVQV tACC Address to Output Delay Max 55 60 70 90 120 150 ns
OE# = VIL
tELQV tCE Chip Enable to Output Delay OE# = VIL Max 55 60 70 90 120 150 ns
Notes:
1. Not 100% tested.
2. See Figure 8 and Table 7 for test specifications.
tRC
tDF
tOE
OE#
tOEH
WE# tCE
tOH
HIGH Z HIGH Z
Outputs Output Valid
RESET#
RY/BY#
0V
21505C-13
Figure 9. Read Operations Timings
24 Am29F400B
PRELIMINARY
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
Note:
Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
21505C-14
Figure 10. RESET# Timings
Am29F400B 25
PRELIMINARY
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC Std. Description -55 -60 -70 -90 -120 -150 Unit
CE#
OE#
BYTE#
tELFL
BYTE# DQ0–DQ14 Data Output Data Output
Switching (DQ0–DQ14) (DQ0–DQ7)
from word
to byte
mode DQ15/A-1 DQ15 Address
Output Input
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte DQ0–DQ14 Data Output Data Output
to word (DQ0–DQ7) (DQ0–DQ14)
mode
DQ15/A-1 Address DQ15
Input Output
tFHQV
21505C-15
Figure 11. BYTE# Timings for Read Operations
CE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
21505C-16
Figure 12. BYTE# Timings for Write Operations
26 Am29F400B
PRELIMINARY
AC CHARACTERISTICS
Erase/Program Operations
Parameter
JEDEC Std. Description -55 -60 -70 -90 -120 -150 Unit
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29F400B 27
PRELIMINARY
AC CHARACTERISTICS
Program Command Sequence (last two cycles) Read Status Data (last two cycles)
tWC tAS
Addresses 555h PA PA PA
tAH
CE#
tCH
tGHWL
OE#
tWP tWHWH1
WE#
tWPH
tCS
tDS
tDH
tBUSY tRB
RY/BY#
tVCS
VCC
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
21505C-17
Figure 13. Program Operation Timings
28 Am29F400B
PRELIMINARY
AC CHARACTERISTICS
Erase Command Sequence (last two cycles) Read Status Data
tWC tAS
Addresses 2AAh SA VA VA
555h for chip erase
tAH
CE#
tGHWL
OE# tCH
tWP
WE#
tWPH tWHWH2
tCS
tDS
tDH
In
Data 55h 30h Progress Complete
tBUSY tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
21505C-18
Figure 14. Chip/Sector Erase Operation Timings
Am29F400B 29
PRELIMINARY
AC CHARACTERISTICS
tRC
Addresses VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ7 Complement Complement True Valid Data
High Z
DQ0–DQ6 Status Data Status Data True Valid Data
tBUSY
RY/BY#
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
21505C-19
Figure 15. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses VA VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ6/DQ2 Valid Status Valid Status Valid Status Valid Data
(first read) (second read) (stops toggling)
tBUSY
RY/BY#
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
21505C-20
Figure 16. Toggle Bit Timings (During Embedded Algorithms)
30 Am29F400B
PRELIMINARY
AC CHARACTERISTICS
Enter
Embedded Erase Enter Erase Erase
Erasing Suspend Suspend Program Resume
DQ6
DQ2
Note:
The system may use either CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
21505C-21
Figure 17. DQ2 vs. DQ6
tVIDR VID Rise and Fall Time (See Note) Min 500 ns
12 V
RESET#
0 or 5 V 0 or 5 V
tVIDR tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
21505C-22
Figure 18. Temporary Sector Unprotect Timing Diagram
Am29F400B 31
PRELIMINARY
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC Std. Description -55 -60 -70 -90 -120 -150 Unit
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
32 Am29F400B
PRELIMINARY
AC CHARACTERISTICS
555 for program PA for program
2AA for erase SA for sector erase
555 for chip erase
Data# Polling
Addresses PA
tWC tAS
tAH
tWH
WE#
tGHEL
OE#
tCP tWHWH1 or 2
CE#
tWS tCPH
tBUSY
tDS
tDH
DQ7# DOUT
Data
tRH A0 for program PD for program
55 for erase 30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence, with the device in word mode.
21505C-23
Figure 19. Alternate CE# Controlled Write Operation Timings
Am29F400B 33
PRELIMINARY
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for -60), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description Min Max
Input voltage with respect to VSS on all pins except I/O pins
–1.0 V 12.5 V
(including A9, OE#, and RESET#)
Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V
Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Test Conditions Min Unit
150°C 10 Years
Minimum Pattern Data Retention Time
125°C 20 Years
34 Am29F400B
PRELIMINARY
PHYSICAL DIMENSIONS
TS 048
48-Pin Standard Thin Small Outline Package (measured in millimeters)
0.95
1.05
Pin 1 I.D.
1 48
11.90
12.10
0.50 BSC
24 25
18.30 0.05
18.50 0.15
19.80
20.20
16-038-TS48-2
0.08 TS 048
1.20 0.20 DT95
MAX 8-8-96 lv
0.10
0.21
0°
0.25MM (0.0098") BSC 5°
0.50
0.70
TSR048
48-Pin Reverse Thin Small Outline Package (measured in millimeters)
0.95
1.05
Pin 1 I.D.
1 48
11.90
12.10
0.50 BSC
24 25
18.30 0.05
18.50 0.15
16-038-TS48
TSR048
0.08 DT95
1.20 0.20 8-8-96 lv
MAX 0.10
0.21
0°
0.25MM (0.0098") BSC 5°
0.50
0.70
Am29F400B 35
PRELIMINARY
PHYSICAL DIMENSIONS
SO 044
44-Pin Small Outline Package (measured in millimeters)
44 23
13.10 15.70
13.50 16.30
1 22
1.27 NOM.
TOP VIEW
28.00
28.40
2.17 0.10
2.80 0.21
2.45 MAX.
0°
SEATING 8° 0.60
0.35 0.10 PLANE 1.00
0.50 0.35
END VIEW
SIDE VIEW 16-038-SO44-2
SO 044
DF83
8-8-96 lv
36 Am29F400B
PRELIMINARY
REVISION SUMMARY
Revision B Revision C
Global Global
Added -55 and -60 speed options, deleted -65 speed Formatted for consistency with other 5.0 volt-only data
option. Changed data sheet designation from Advance sheets.
Information to Preliminary.
AC Characteristics
Connection Diagrams Changed tDF and TFLQZ to 15 ns for -55 speed option.
Corrected pinouts on all packages: deleted A18.
Revision C+1
Table 1, Device Bus Operations
Table 2, Top Boot Block Sector Address Table
Revised to indicate inputs for both CE# and RESET#
are required for standby mode. Corrected the sector size for SA10 to 16 Kbytes/8
Kwords.
Sector Protection/Unprotection
DC Characteristics—TTL/NMOS Compatible
Corrected text to indicate that these functions can only
be implemented using programming equipment. Deleted Note 4.
Corrected hexadecimal values in address and data Added note reference for tVIDR. This parameter is not
waveforms. 100% tested.
Corrected tAH specification for -90 speed option to 45 Changed minimum 100K program and erase cycles
ns. guaranteed to 1,000,000.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29F400B 37