Questions & Answers On Transistor Biasing and Thermal Stabilization

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Collector - Base Bias Questions

and Answers
by staff10
5-6 minutes
This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Collector-to-
Base Bias”.
1. The collector current (IC) that is obtained in a collector to

base biased transistor is_________
a) (VCC-VBE)/RB
b) (VCC+VBE)/RB
c) (VCE-VBE)/RB
d) (VCE+VBE)/RB
View Answer
Answer: a
Explanation: The collector current is analysed by the DC
analysis of a transistor. It involves the DC equivalent circuit
of a transistor. The base current is first found and the
collector current is obtained from the relation, IC=IBβ.
2. The collector to emitter voltage (VCE) is obtained

by_________
a) VCC – RC(IC-IB)
1 of 7 3/16/18, 9:45 AM
b) VCC – RC(IC+IB)
c) VCC + RC(IC+IB)
d) VCC + RC(IC-IB)
View Answer
Answer: b
Explanation: The collector to emitter voltage is obtained in
order to find the operating point of a transistor. It is taken
when there is no signal applied to the transistor. The point
thus obtained lies in the cut off region when the transistor is
used as a switch.
3. What is the DC characteristic used to prove that the

transistor is indeed biased in saturation mode?
a) IC = βIB
b) IC > βIB
c) IC >> βIB
d) IC < βIB
View Answer
Answer: d
Explanation: When in a transistor is driven into saturation,
we use VCE(SAT) as another linear parameter. In, addition
when a transistor is biased in saturation mode, we have IC
< βIB. This characteristic used to prove that the transistor is
indeed biased in saturation mode.
4. The thermal runway is avoided in a collector to base bias

because_________
a) of its independence of β
b) of the positive feedback produced by the base resistor
c) of the negative feedback produced by the base resistor
2 of 7 3/16/18, 9:45 AM
d) of its dependence of β
View Answer
Answer: c
Explanation: The self destruction of a transistor due to
increase temperature is called thermal run away. It is
avoided by the negative feedback produced by the base
resistor in a collector to base bias. The IC which is
responsible for the damage is reduced by decreased output
signal.
5. When the temperature is increased, what happens to the

collector current after a feedback is given?
a) it remains same
b) it increases
c) it cannot be predicted
d) it decreases
View Answer
Answer: d
Explanation: Before the feedback is applied, when the
temperature is increased, the reverse saturation increases.
The collector current also increases. When the feedback is
applied, the base current increases with decreasing
collector current and the thermal runway too.
6. The demerit of a collector to base bias is_________

a) its need of high resistance values
b) its dependence on β
c) its independence on β
d) the positive feedback produced by the base resistor
View Answer
3 of 7 3/16/18, 9:45 AM
Answer: a
Explanation: When the stability factor S=1, the collector
resistor value should be very large when compared to the
base resistor. So, when RC is large we need to provide
large power supply which increases the cost. At the same
time, as the base resistor is small we need to provide small
power supply.
7. The negative feedback does good for DC signal

by_________
a) decreasing the gain
b) increasing the gain
c) stabilising the operating point
d) increasing the stability factor
View Answer
Answer: c
Explanation: The resistor RB can provide negative feedback
for both AC and DC signals. The negative feedback for DC
signal is done good as it can provide stable operating point.
On the other side, the negative feedback is badly done for
AC signal by decreasing the voltage gain.
8. In the circuit, transistor has β =60, VBE=0.7V. Find the

collector to emitter voltage drop VCE.
4 of 7 3/16/18, 9:45 AM
a) 5V
b) 3V
c) 8V
d) 6V
View Answer
Answer: d
Explanation: We know, IC=(VCC-VBE)/RB
By putting the values, we have IC=5.9mA. IE=IC/α. So,
IE=5.99mA.
VCE= VCC-RC(IC+IB). We have VCE=6V.
9. In the circuit shown below, β =100 and VBE=0.7V. The

Zener diode has a breakdown voltage of 6V. Find the
operating point.
5 of 7 3/16/18, 9:45 AM
a) (6.7V, 5.3mA)
b) (5.7V, 5.3mA)
c) (6.7V, 5mA)
d) (6V, 5mA)
View Answer
Answer; a
Explanation: We know, by KVL -12+(IC+IB)1K+6+VBE=0
We have IE=5.3. IC= αIE=5.24mA. From another loop,
-12+IEIK+VBE=0
We have, VCE=12-5.3m*1000=6.7V. Hence the Q point is
(6.7V, 5.3mA).
10. When the β value is large for a given transistor, the IC

and VCE values are given by_________
a) (VCC-VBE)/RB, VCC-RCIC
b) (VCC+VBE)/RB, VCC-RC(IC+IB)
c) (VCC+VBE)/RB, VCC+RC(IC+IB)
d) (VCC+VBE)/RB, VCC+RC(IC-IB)
View Answer
Answer: a
Explanation: The base current IB is zero when β value is
6 of 7 3/16/18, 9:45 AM
large. So, the VCE changes to VCC-RCIC. The collector

current IC is changed to (VCC-VBE)/RB from β(VCC-VBE)/(1+
β)RE+ RB.
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Electronic Devices and Circuits.
To practice all areas of Electronic Devices and Circuits,

here is complete set of 1000+ Multiple Choice Questions
and Answers.
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Self-Bias - Electronic Devices and

Circuits Questions and Answers
by staff10
4-6 minutes

Questions & Answers (MCQs) focuses on “Self-Bias”.
1. The collector current (IC) that is obtained in a self biased

transistor is_________
a) (VTH – VBE)/RE
b) (VTH + VBE)/RE
c) (VTH – VBE)/RE
d) (VTH + VBE)/RE
View Answer
Answer: a
Explanation: The collector current is analysed by the DC
analysis of a transistor. It involves the DC equivalent circuit
of a transistor. The base current is first found and the
collector current is obtained from the relation, IC=IBβ.
2. The collector to emitter voltage (VCE) is obtained

by_________
a) VCC – RCIC+RBIB
b) VCC – RCIC-REIE
1 of 7 3/16/18, 9:46 AM
c) VCC + RCIC
d) VCC + RCIB
View Answer
Answer: b
Explanation: The collector to emitter voltage is obtained in
order to find the operating point of a transistor. It is taken
when there is no signal applied to the transistor. The point
thus obtained lies in the cut off region when the transistor is
used as a switch.
3. The thermal runway is avoided in a self bias

because_________
a) of its independence of β
b) of the positive feedback produced by the emitter resistor
c) of the negative feedback produced by the emitter resistor
d) of its dependence of β
View Answer
Answer: c
avoided by the negative feedback produced by the emitter
resistor in a self bias. The IC which is responsible for the
damage is reduced by decreased output signal.

a) it remains same
b) it increases
d) it decreases
2 of 7 3/16/18, 9:46 AM
View Answer
Answer: d
applied, the drop across the emitter resistor increases with
decreasing collector current and the thermal runway too.
5. What is the Thevenin’s voltage (VTH) in a self bias shown

below?
a) VCCR2/R1+R2
b) VCCR1/R1+R2
c) VCCR2/R1-R2
d) VCCR2/R1-R2
View Answer
Answer: a
Explanation: The base current cannot be obtained directly
from the KVL or KCL applications. The VCC and VBE cannot
come under a single equation. So, the circuit is changed
3 of 7 3/16/18, 9:46 AM
with a Thevenin’s voltage (VTH) and Thevenin’s resistance.
6. What is the Thevenin’s resistance (RTH) in a self bias

shown below?
a) R1R2/R1+R2
b) R2/R1+R2
c) R1R2/R1-R2
d) R1/R1-R2
View Answer
Answer: a
Explanation: The base current cannot be obtained directly
from the KVL or KCL applications. A potential divider
network is formed by R1 and R2.The VCC and VBE cannot
come under a single equation. So, the circuit is changed
with a Thevenin’s resistance.
7. The stability factor for a self biased transistor

is_________
a) 1 – RTH/RE
b) 1 + RTH/RE
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c) 1 + RE/RTH
d) 1 – RE/RTH
View Answer
Answer: b
Explanation: The stability of the circuit is inversely
proportional to the stability factor. The emitter resistor is
very large when compared to the Thevenin’s resistance.
When β is not that large, then S=(1+ β)( RTH+ RE)/ (1+
β)RE+ RTH.
8. In the circuit, the transistor has a large β value

(VBE=0.7V). Find the current through RC.
a) 0.5mA
b) 2mA
c) 1mA
d) 1.6mA
View Answer
Answer: c
Explanation: We know, IC=VTH-VBE/RE
=9*3/9=3V. IC=3-0.7/2.3=1mA.
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9. A silicon NPN transistor is used and it has a large value

of β. Find the required value of R2 when IC=1mA.
a) 10kΩ
b) 20kΩ
c) 30kΩ
d) 40kΩ
View Answer
Answer: d
Explanation: For silicon, VBE=0.8V, VCE=0.2V. IC=VTH-
VBE/RE. By pitting the values, we have VTH=1.3V. R2 can
be found from, VCCR2/R1+R2. We get R2=40KΩ.
10. The value of αac for all practical purposes, for

commercial transistors range from_________
a) 0.5 to 0.6
b) 0.7 to 0.77
c) 0.8 to 0.88
d) 0.9 to 0.99
View Answer
6 of 7 3/16/18, 9:46 AM
Answer: d
Explanation: For all practical purposes, αac=αdc=α and
practical values in commercial transistors range from
0.9-0.99. It is the measure of the quality of a transistor.
Higher is the value of α, better is the transistor in the sense
that collector current approaches the emitter current.


and Answers.
7 of 7 3/16/18, 9:46 AM
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Bias Compensation - Electronic

Devices and Circuits Questions
and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “Bias
Compensation”.
1. The compensation techniques are used to_________

a) increase stability
b) increase the voltage gain
c) improve negative feedback
d) decrease voltage gain
View Answer
Answer: b
Explanation: Usually, the negative feedback is used to
produce a stable operating point. But it reduces the voltage
gain of the circuit. This sometimes is intolerable and should
be avoided in some applications. So, the biasing techniques
are used.
2. Compensation techniques refer to the use of_________

a) diodes
1 of 6 3/16/18, 9:46 AM
b) capacitors
c) resistors
d) transformers
View Answer
Answer: a
Explanation: Compensation techniques refer to the use of
temperature sensitive devices such as thermistors, diodes,
transistors, sensistors etc to compensate variation in
currents. Sometimes for excellent bias and thermal
stabilization, both stabilization and compensation
techniques are used.
3. In a silicon transistor, which of the following change

significantly to the change in IC?
a) VCE
b) IB
c) VBE
b) IE
View Answer
Answer: c
Explanation: For germanium transistor, changes in ICO with
temperature contribute more serious problem than for
silicon transistor. On the other hand, in a silicon transistor,
the changes of VBE with temperature possesses
significantly to the changes in IC.
4. What is the compensation element used for variation in

VBE and ICO?
a) diodes
b) capacitors
2 of 6 3/16/18, 9:46 AM
c) resistors
d) transformers
View Answer
Answer: a
Explanation: A diode is used as the compensation element
used variation in VBE and ICO. The diode used is of the
same material and type as that of transistor. Hence, the
voltage across the diode has same temperature coefficient
as VBE of the transistor.
5. The expression for IC in the compensation for instability

due to ICO variation_________
a) βI+βIO+βICO
b) βI+βIO
c) βIO+βICO
d) βI+βICO
View Answer
Answer: a
Explanation: In this method, diode is used for the
compensation in variation of ICO. The diode used is of the
same material and type as that of transistor. Hence, the
reverse saturation current IO of the diode will increase with
temperature at the same rate as the transistor collector
saturation current ICO.
6. Which of the following has a negative temperature

coefficient of resistance?
a) sensistor
b) diode
c) thermistor
3 of 6 3/16/18, 9:46 AM
d) capacitor
View Answer
Answer: c
Explanation: The thermistor has a negative temperature
coefficient of resistance. It means, its resistance decreases
exponentially with increasing T. The thermistor RT is used
to minimize the increase in collector current.
7. Which of the following has a negative temperature

coefficient of resistance?
a) capacitor
b) diode
c) thermistor
d) sensistor
View Answer
Answer: d
Explanation: The sensistor has a positive temperature
coefficient of resistance. It is a temperature sensitive
resistor. It is a heavily doped semiconductor. When voltage
is decreased, the net forward emitter voltage decreases. As
a result the collector current decreases.
8. Increase in collector emitter voltage from 5V to 8V

causes increase in collector current from 5mA to 5.3mA.
Determine the dynamic output resistance.
a) 20kΩ
b) 10kΩ
c) 50kΩ
d) 60kΩ
View Answer
4 of 6 3/16/18, 9:46 AM
Answer: b
Explanation: ro=ΔVCE/ΔIC
=3/0.3m=10kΩ.
9. The output resistance of CB transistor is given by

_________
a) ΔVCB/ΔIC
b) ΔVBE/ΔIB
c) ΔVBE/ΔIC
d) ΔVEB/ΔIE
View Answer
Answer: a
Explanation: The ratio of change in collector base voltage
(ΔVCB) to resulting change in collector current (ΔIC) at
constant emitter current (IE) is defined as output resistance.
This is denoted by ro.
10. The negative sign in the formula of amplification factor

indicates_________
a) that IE flows into transistor while IC flows out it
b) that IC flows into transistor while IE flows out it
c) that IB flows into transistor while IC flows out it
d) that IC flows into transistor while IB flows out it
View Answer
Answer: a
Explanation: When no signal is applied, the ratio of collector
current to emitter current is called dc alpha, αdc of a
transistor. αdc=-IC/IE. It is the measure of the quality of a
transistor. Higher is the value of α, better is the transistor in
the sense that collector current approaches the emitter
5 of 6 3/16/18, 9:46 AM
current.


and Answers.
6 of 6 3/16/18, 9:46 AM
Thermal Runaway - Electronic Devices and Circ... about:reader?url=https://www.sanfoundry.com/...
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Thermal Runaway - Electronic

and Answers
by staff10
5-7 minutes

Questions & Answers (MCQs) focuses on “Thermal
Runaway”.
1. Thermal runaway is_________

a) an uncontrolled positive feedback
b) a controlled positive feedback
c) an uncontrolled negative feedback
d) a controlled negative feedback
View Answer
Answer: a
Explanation: Thermal runaway is a self destruction process
in which an increase in temperature creates such a
condition which in turn increases the temperature again.
This uncontrolled rise in temperature causes the component
to get damaged.
2. The thermal runway is avoided in a self bias

because_________
1 of 6 3/16/18, 9:46 AM
a) of its independence on β
b) of the positive feedback produced by the emitter resistor
c) of the negative feedback produced by the emitter resistor
d) of its dependence on β
View Answer
Answer: c
avoided by the negative feedback produced by the emitter
resistor in a self bias. The IC which is responsible for the
damage is reduced by decreased output signal.

a) it remains same
b) it increases
d) it decreases
View Answer
Answer: d
applied, the drop across the emitter resistor increases with
decreasing collector current and the thermal runway too.
4. The thermal runway is avoided in a collector to base bias

because_________
a) of its independence on β
b) of the positive feedback produced by the base resistor
2 of 6 3/16/18, 9:46 AM
c) of the negative feedback produced by the base resistor

d) of its dependence on β
View Answer
Answer: c
avoided by the negative feedback produced by the base
resistor in a collector to base bias. The IC which is
responsible for the damage is reduced by decreased output
signal.

a) it remains same
b) it increases
d) it decreases
View Answer
Answer: d
applied, the base current increases with decreasing
collector current and the thermal runway too.
6. Discrete transistors T1 and T2 having maximum collector

current rating of 0.75A are connected in parallel as shown
in the figure. This combination is treated as a single
transistor to carry a single current of 1A, when biased with a
self bias circuit. When the circuit is switched ON, T1 had
3 of 6 3/16/18, 9:46 AM
draws 0.55A and T2 draws 0.45A. If the supply is kept ON

continuously, it is very likely that_________
a) both T1 and T2 get damaged

b) both T1 and T2 will be safe
c) only T1 gets damaged
d) only T2 gets damaged
View Answer
Answer: c
Explanation: The T1 transistor is having more power
dissipation as it is drawing 0.55A. When power dissipation
increases, the temperature increases and this leads to the
ultimate further increase in the current drawn by T1. The
current drawn by T2 will be reduced as the sum of currents
drawn by T1 and T2 should be constant.
7. When the collector current is increased in a

transistor_________
a) the reverse current is increased
b) the temperature is increased
c) collisions of electrons decrease
d) the emitter does not emit electrons
4 of 6 3/16/18, 9:46 AM
View Answer
Answer: b
Explanation: As the collector current is increased, the
emitter releases more number of electrons. This causes
more collisions of electrons at collector. This happens in a
cycle and produces such a condition in which temperature
is further more increased.
8. Which of the following are true?

a) TJ – TA = θPd
b) TJ – TA = θ/Pd
c) TJ – TA = θ+Pd
d) TJ – TA = θ-Pd
View Answer
Answer: a
Explanation: The TJ is called as junction temperature which
varies and TA is called as the ambient temperature which is
fixed. The difference between these temperatures is directly
proportional to the power dissipation. Here, θ is called as
thermal resistance which is proportionality constant.
9. When the power dissipation increases in a transistor, the

thermal resistance_________
a) increases
b) cannot be predicted
c) decreases
d) remains same
View Answer
Answer: c
Explanation: The power dissipation is directly proportional
5 of 6 3/16/18, 9:46 AM
to thermal resistance. We have, TJ – TA = θPd in which we

can observe θ ∝ 1/Pd. So, a device with low power
dissipation has high thermal resistance.
10. Which of the following biasing techniques are prone to

thermal runaway?
a) self bias
b) collector to base bias
c) fixed bias
d) the biasing technique is identified by temperature effect
View Answer
Answer: c
Explanation: The collector current of a fixed bias transistor
is IC= β(VCC-VBE)/RB. When the temperature is increased,
the reverse saturation increases. The collector current also
increases. This in turn increases the current again which
leads to damage of transistor.


and Answers.
6 of 6 3/16/18, 9:46 AM
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Thermal Stability - Electronic

and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “Thermal
Stability”.
1. For a given transistor, the thermal resistance is 8°C/W

and for the ambient temperature TA is 27°C. If the
transistor dissipates 3W of power, calculate the junction
temperature (TJ).
a) 51°C
b) 27°C
c) 67°C
d) 77°C
View Answer
Answer: a
Explanation: We know, TJ-TA=HPD
TJ=TA+HPD=27+8*3=51°C.
2. Which of the following are true?

a) TJ-TA=θpd
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b) TJ-TA=θ/pd
c) TJ-TA=θ+pd
d) TJ-TA=θ-pd
View Answer
Answer: a
Explanation: The TJ¬ is called as junction temperature
which varies and TA is called as the ambient temperature
which is fixed. The difference between these temperatures
is directly proportional to the power dissipation. Here, θ is
called as thermal resistance which is proportionality
constant.
3. A silicon power transistor is operated with a heat sink HS-

A=1.5°C/W. The transistor rated at 150W (25°C) has HJ-
C=0.5°C/W and the mounting insulation has HC-
S=0.6°C/W. What maximum power can be dissipated if the
ambient temperature is 40°C and (TJ)MAX=200°C?
a) 70.6W
b) 61.5W
c) 37.8W
d) 56.9W
View Answer
Answer: b
Explanation: PD=(TJ-TA)/ HJ-C +HC-S +HS-A
=200-40/0.5+0.6+1.5=61.5W.
4. The total thermal resistance of a power transistor and

heat sink is 20°C/W. The ambient temperature is 25°C and
(TJ)MAX=200°C. If VCE=4V, find the maximum collector
current that the transistor can carry without destruction.
2 of 6 3/16/18, 9:46 AM
a) 3.67A
b) 7.56A
c) 2.19A
d) 4.16A
View Answer
Answer: c
Explanation: PD =(TJ-TA)/ H
=200-25/20=8.75W.
Now, VCEIC = 8.75/4=2.19A.
5. The total thermal resistance of a power transistor and

heat sink is 20°C/W. The ambient temperature is 25°C and
(TJ)MAX=200°C. If VCE=4V, find the maximum collector
current that the transistor can carry without destruction.
What will be the allowed value of collector current if ambient
temperature rises to 75°C?
a) 3.67A
b) 7.56A
c) 2.19A
d) 1.56A
View Answer
Answer: d
Explanation: PD =(TJ-TA)/ H
=200-75/20=6.25W.
Now, IC = 6.25/4=1.56A.
6. Which of the following is true?

a) HC-A = HJ-C – HJ-A
b) HC-A = HJ-C + HJ-A
c) HJ-A = HJ-C – HC-A
3 of 6 3/16/18, 9:46 AM
d) HJ-A = HJ-C + HC-A

View Answer
Answer: d
Explanation: HJ-C is thermal resistance between junction
and case and HC-A is thermal resistance between case and
ambient. The circuit designer has no control over HJ-C. So,
a proper approach to dissipate heat from case to ambient is
through heat sink.
7. The condition to be satisfied to prevent thermal runaway?

a) ∂PC/∂TJ > 1/Q
b) ∂PC/∂TJ < 1/Q
c) ∂PC/∂TJ > 1/Q
d) ∂PC/∂TJ < 1/Q
View Answer
Answer: b
Explanation: PC is the power dissipated at the collector
junction. TJ is junction temperature which varies. The
difference between these temperatures is directly
proportional to the power dissipation. Here, Q is called as
thermal resistance which is proportionality constant.
8. Thermal stability can be obtained by_________

a) shifting operating point
b) increasing power supply
c) heat sink
d) decreasing current at collector
View Answer
Answer: c
Explanation: As power transistors handle large currents,
4 of 6 3/16/18, 9:46 AM
they always heat up during operation. Generally, power

transistors are mounted in large metal case to provide a
large area from which the heat generated by the device
radiates.
9. Thermal stability is dependent on thermal runaway which

is_________
a) an uncontrolled positive feedback
b) a controlled positive feedback
c) an uncontrolled negative feedback
d) a controlled negative feedback
View Answer
Answer: a
Explanation: Thermal runaway is a self destruction process
in which an increase in temperature creates such a
condition which in turn increases the temperature again.
This uncontrolled rise in temperature causes the component
to get damaged.
10. Which of the following biasing techniques are affected

by thermal runaway?
a) self bias
b) collector to base bias
c) fixed bias
d) the biasing technique is identified by temperature effect
View Answer
Answer: c
Explanation: The collector current of a fixed bias transistor
is IC= β(VCC-VBE)/RB. When the temperature is
increased, the reverse saturation increases. The collector
5 of 6 3/16/18, 9:46 AM
current also increases. This in turn increases the current

again which leads to damage of transistor.


and Answers.
6 of 6 3/16/18, 9:46 AM

Questions & Answers On Transistor Biasing and Thermal Stabilization

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Collector - Base Bias Questions

This set of Electronic Devices and Circuits Multiple Choice

1. The collector current (IC) that is obtained in a collector to

2. The collector to emitter voltage (VCE) is obtained

3. What is the DC characteristic used to prove that the

4. The thermal runway is avoided in a collector to base bias

5. When the temperature is increased, what happens to the

6. The demerit of a collector to base bias is_________

7. The negative feedback does good for DC signal

8. In the circuit, transistor has β =60, VBE=0.7V. Find the

9. In the circuit shown below, β =100 and VBE=0.7V. The

10. When the β value is large for a given transistor, the IC

large. So, the VCE changes to VCC-RCIC. The collector

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Self-Bias - Electronic Devices and

This set of Electronic Devices and Circuits Multiple Choice

1. The collector current (IC) that is obtained in a self biased

2. The collector to emitter voltage (VCE) is obtained

3. The thermal runway is avoided in a self bias

4. When the temperature is increased, what happens to the

5. What is the Thevenin’s voltage (VTH) in a self bias shown

with a Thevenin’s voltage (VTH) and Thevenin’s resistance.

6. What is the Thevenin’s resistance (RTH) in a self bias

7. The stability factor for a self biased transistor

8. In the circuit, the transistor has a large β value

9. A silicon NPN transistor is used and it has a large value

10. The value of αac for all practical purposes, for

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Bias Compensation - Electronic

This set of Electronic Devices and Circuits Multiple Choice

1. The compensation techniques are used to_________

2. Compensation techniques refer to the use of_________

3. In a silicon transistor, which of the following change

4. What is the compensation element used for variation in

5. The expression for IC in the compensation for instability

6. Which of the following has a negative temperature

7. Which of the following has a negative temperature

8. Increase in collector emitter voltage from 5V to 8V

9. The output resistance of CB transistor is given by

10. The negative sign in the formula of amplification factor

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Thermal Runaway - Electronic

This set of Electronic Devices and Circuits Multiple Choice

1. Thermal runaway is_________

2. The thermal runway is avoided in a self bias

3. When the temperature is increased, what happens to the

4. The thermal runway is avoided in a collector to base bias

c) of the negative feedback produced by the base resistor

5. When the temperature is increased, what happens to the

6. Discrete transistors T1 and T2 having maximum collector

draws 0.55A and T2 draws 0.45A. If the supply is kept ON

a) both T1 and T2 get damaged

7. When the collector current is increased in a

8. Which of the following are true?

9. When the power dissipation increases in a transistor, the

to thermal resistance. We have, TJ – TA = θPd in which we

10. Which of the following biasing techniques are prone to

Sanfoundry Global Education & Learning Series –