Questions & Answers On Semiconductor-Diode Characteristic

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Electronic Devices and Circuits

Interview Questions and Answers
for Freshers
by Manish
3-4 minutes
This set of Electronic Devices and Circuits Interview

Questions and Answers for freshers focuses on “Qualitative
Theory of the p-n junction”.
1. The donor ions is represented by a positive plus sign. Is

it True or False?
a) True
b) False
View Answer
Answer: a
Explanation: The donor atom donates the extra ion to the
semiconductor. Therefore, it is represented by the positive
plus sign.
2. Initially, the p-type carriers are located to

the____________of the semiconductor.
a) Right
b) Left
c) Middle
1 of 5 3/16/18, 9:05 AM
d) Top
View Answer
Answer: b
Explanation: The p-type carriers are nominally located to
the left of the junction and n-type carriers are to the right.
3. The displacement of the charges results in

a) Magnetic field
b) Electric field
c) Rust
d) Hall effect
View Answer
Answer: The flow of carriers in a semiconductor results in

the electric field across the junction. The electric field thus
makes the current flow in the device.
4. What is the value of 1 micron?

a) 10-6cm
b) 10-5cm
c) 10-4cm
d) 10-3cm
View Answer
Answer: c
Explanation: 1 micron=10-4cm=10-6cm.
5. Which of the following results when the equilibrium

established in a semiconductor?
a) Restrain the process of diffusion
b) Electric field becomes very high
c) Both a and b
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d) None of these
View Answer
Answer: c
Explanation: As the electric field is very high, the flow of the
carries will be restricted and the equilibrium will be
obtained.
6. Which of the following options doesn’t defined for the

necessity for the existence of the potential barrier?
a) Contact
b) Potential
c) Diffusion
d) Fermi dirac
View Answer
Answer: d
Explanation: The potential barrier is formed at the junction
of the semiconductor. It’s necessity of the potential barrier
is known as the contact, potential or diffusion.
7. Under the open-circuited conditions the net hole current

must be zero. Is this statement is True or false?
a) True
b) False
View Answer
Answer: a
Explanation: The net hole current is zero because if this
wasn’t true, the hole density at one end of the
semiconductor would continue to increase indefinitely with
time, a situation which is obviously physically impossible.
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8. The un-neutralised ions in the neighbourhood of the

junction are known as
a) Depletion charges
b) Uncovered charges
c) Mobile ions
d) Counter ions
View Answer
Answer: b
Explanation: The un-neutralised ions in the neighbourhood
of the junction are known as uncovered ions because they
are not mobile.
9. Which of the following doesn’t defines for the junction

which is depleted of mobile charges?
a) Depletion region
b) Uncovered region
c) Space charge region
d) Transition region
View Answer
Answer: b
Explanation: The junction which is depleted of mobile
charges is known as depletion region or space charge
region and transition region.
10. Convert 10 micron to meters.

a) 10-5m
b) 107m
c) 10-6m
d) 10-4m
View Answer
4 of 5 3/16/18, 9:05 AM
Answer: a
Explanation: Since, 1 micron=10-6m
10 micron =10-5m.
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Electronic Devices and Circuits.
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Questions and Answers.
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P-N Junction as a Diode - Electronic Devices and... about:reader?url=https://www.sanfoundry.com/...
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P-N Junction as a Diode -

Questions and Answers
by Manish
3-4 minutes
This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “The P-N
Junction as a Diode”.
1. How many junction/s do a diode consist?

a) 0
b) 1
c) 2
d) 3
View Answer
Answer: b
Explanation: Diode is a one junction semiconductor device
which has one cathode and anode. The junction is of p-n
type.
2. If the positive terminal of the battery is connected to the

anode of the diode, then it is known as
a) Forward biased
b) Reverse biased
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c) Equilibrium
d) Schottky barrier
View Answer
Answer: a
Explanation: When a positive terminal is connected to the
anode, the diode is forward biased which lets the flow of the
current in the circuit.
3. During reverse bias, a small current develops known as

a) Forward current
b) Reverse current
c) Reverse saturation current
d) Active current
View Answer
Answer: c
Explanation: When the diode is reverse biased, a small
current flows between the p-n junction which is of the order
of the Pico ampere. This current is known as reverse
saturation current.
4. If the voltage of the potential barrier is V0. A voltage V is

applied to the input, at what moment will the barrier
disappear?
a) V< V0
b) V= V0
c) V> V0
d) V<< V0
View Answer
Answer: b
Explanation: When the voltage will be same that of the
2 of 5 3/16/18, 9:06 AM
potential barrier, the potential barrier disappears resulting in

flow of current.
5. During the reverse biased of the diode, the back

resistance decrease with the increase of the temperature. Is
it true or false?
a) True
b) False
View Answer
Answer: a
Explanation: Due to the increase in the reverse saturation
current due to the increase in the temperature, the back
resistance decrease with the increasing temperature.
6. What is the maximum electric field when Vbi=2V , VR=5V

and width of the semiconductor is 7cm?
a) -100V/m
b) -200V/m
c) 100V/m
d) 200V/m
View Answer
Answer: b
Explanation: Emax=-2(Vbi+VR)/W
=-2(2+5)/ (7*10-2)
=-200V/m.
7. When the diode is reverse biased with a voltage of 6V

and Vbi=0.63V. Calculate the total potential.
a) 6V
b) 6.63V
c) 5.27V
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d) 0.63V
View Answer
Answer: b
Explanation: Vt=Vbi+VR
=0.63+6
=6V.
8. It is possible to measure the voltage across the potential

barrier through a voltmeter?
a) True
b) False
View Answer
Answer: b
Explanation: The contacts of the voltmeter have some
resistance which will not accurately measure the voltage
across the potential barrier. Thus, it is not possible to
measure the voltage across the potential barrier.
9. What will be the output of the following circuit? (Assume

0.7V drop across the diode)
a) 12V
b) 12.7V
c) 11.3V
d) 0V
View Answer
Answer: c
4 of 5 3/16/18, 9:06 AM
Explanation: V=12-0.7
=11.3V.
10. Which of the following formula represents the correct

formula for width of the depletion region?
a)
b)
c)
d)
View Answer
Answer: a
Explanation: Option a is the correct formula.

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Questions and Answers for
Experienced
by Manish
4-5 minutes
This set of Electronic Devices and Circuits Questions and

Answers for Experienced people focuses on “Band
Structure of an Open-Circuited p-n junction”.
1. The conduction band edge in the p material is not at the

same level to that of conduction band edge in the n
material. Is it true or false?
a) True
b) False
View Answer
Answer: a
Explanation: In a p-n junction diode, the energy levels of the
p material and n material will not be at same level. They will
be different. So, the conduction band edge as well as the
valence band edge of the p material will not be same to that
of the n material.
2. Which of the following equations represent the correct

expression for the shift in the energy levels for the p-n
1 of 5 3/16/18, 9:06 AM
junction?
a) Eo = Ecn – Ecp
b) Eo = Ecp – Ecn
c) Eo = Ecp + Ecn
d) Eo = -Ecp – Ecn
View Answer
Answer: b
Explanation: The shift in the energy of the energy level will
be the difference of the conduction band edge of the p
material and conduction band edge of n material. In the
energy level diagram, the conduction band edge of p
material is higher than that of the n material.
3. Calculate the Eo given that Nd=1.5*1010cm-3,

Na=1.5*1010cm-3 at temperature 300K?
a) 1.5*1010eV
b) 0.256eV
c) 0eV
d) 4.14*10-21eV
View Answer
Answer: c
Explanation: Eo=kTln((Nd*Na)/(ni)2)
Substituting k=1.38*10-23/K, T=300k and the values
ofNd,Naand ni,
We get
Eo=0eV.
4. In a p-n junction, the valence band edge of the p material

is greater than which of the following band?
a) Conduction band edge of n material
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b) Valence band edge of n material

c) Conduction band edge of p material
d) Fermi level of p material
View Answer
Answer: b
Explanation: When the p-n junction is formed, the energy
levels of the p- material go higher than the n material.
That’s why the valence band of the p material will be
greater than that of the n material.
5. Which of the following equations represent the correct

expression for the band diagram of the p-n junction?
(E1=difference between the fermi level of material and
conduction band of n material and E2=difference between
the conduction band of n material and fermi level of n
material)
a) Ecn – E f = (1/2)*EG – E1
b) Ecn – E f = (1/2)*EG – E2
c) Ef – Ecp = (1/2)*EG – E1
d) Ecn – Ef = (1/2)*EG + E1
View Answer
Answer: a
Explanation: From the energy band diagram of the p-n
junction, the option ‘a’ satisfies that band diagram.
6. Calculate the value of Eo when pno=104cm-3 and

ppo=1016cm-3 at T=300K.
a) 1meV
b) 0.7meV
c) 0.7eV
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d) 0.1meV
View Answer
Answer: c
Explanation: Eo=kTln(ppo/pno)
Substituting the values, we get
Eo=0.7eV.
7. Calculate the value of Dp when µp=400cm/s and

VT=25mV.
a) 1
b) 0.01
c) 0.1
d) 10
View Answer
Answer: c
Explanation: Dp= µp*VT
=400*10-2*25*10-3
=0.1.
8. What is the value of kT at room temperature?

a) 0.0256eV
b) 0.25eV
c) 25eV
d) 0.0025eV
View Answer
Answer: a
Explanation: kT=1.38*10-23*300K
=4.14*10-21/ (1.6*10-19)
=0.0256eV.
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9. Is Vo depends only on the equilibrium concentrations. Is

it true or false?
a) True
b) False
View Answer
Answer: a
Explanation: Vo is the contact potential of the junction when
the junction is in equilibrium. If, the junction is not in the
equilibrium, Vo can’t be calculated.
10. Calculate Vo when ppo=1016cm-3, pno=104cm-3 and

Vt=25mV.
a) 69V
b) 6.9V
c) 0.69V
d) 0.069V
View Answer
Answer: c
Explanation: Vo=VT ln(ppo/pno )
=25*10-3*ln(1016/104)
=0.69V.


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Choice Questions and Answers.
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Interview Questions and Answers
for Experienced
by Manish
4-5 minutes
This set of Electronic Devices and Circuits Interview

Questions and Answers for Experienced people focuses on
“The Current Components in a P-N junction diode”.
1. When a forward biased is applied to a diode, the

electrons enter to which region of the diode?
a) P-region
b) N-region
c) P-n junction
d) Metal side
View Answer
Answer: a
Explanation: When the forward biased is applied, the
electrons enter to the p-region and the holes enter to the
n-region so that holes can flow from p-region to n-region.
Whereas, the electrons can travel from n-region to p-region.
2. The number of injected minority carriers falls off linearly

with the increase in the distance from the junction. Is it true
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or false?
a) True
b) False
View Answer
Answer: b
Explanation: The number of minority carriers fall off
exponentially rather than linearly with the increase in the
distance from the junction.
3. What is the total current in a diode when x=0?

a) I = Ipn (0) – Inp (0)
b) I = Ipn (0) + Inp (0)
c) I = -Ipn (0) – Inp (0)
d) I = -Ipn (0) + Inp (0)
View Answer
Answer: b
Explanation: At junction, the total current is equal to the
minority hole current plus the minority electron current.
4. The current in the diode is

1. Unipolar
2. Bipolar
a) I only
b) II only
c) I and II both
d) Neither I nor II
View Answer
Answer: b
Explanation: The current in the diode consists of both the
electrons and holes. So, it is bipolar.
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5. The current is constant throughout the device. Is it true or

false?
a) True
b) False
View Answer
Answer: a
Explanation: The current in the device is constant but the
proportion due to the electrons and holes varies with
distance.
6. Which of the following statements is correct under

forward biased p-n diode?
a) current enters n side as hole current and leaves p side
as electron current
b) current enters n side as electron current and leaves p
side as hole current
c) current enters p side as hole current and leaves n side as
electron current
d) current enters p side as hole current and leaves p side
as electron current
View Answer
Answer: c
Explanation: When the current flows in a p-n diode, the
current enters p side as hole current and leaves n side as
electron current.
7. Calculate the total current when Ipn (0)=1mA and Inp

(0)=2mA.
a) 1mA
b) -1mA
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c) 0
d) 3mA
View Answer
Answer: d
Explanation: I=Ipn (0)+Inp (0)
=1mA+2mA
=3mA.
8. What is the hole current in the p region of the diode?

a) Ipp (x)=I-Inp (x)
b) Ipp (x)=I+Inp (x)
c) Ipp (x)=-I-Inp (x)
d) Ipp (x)=-I+Inp (x)
View Answer
Answer: a
Explanation: The hole current in the p region is equal to the
total current minus the minority electrons in the p region.
9. What does Inp represent?

a) Hole current in n region
b) Hole current in p region
c) Electron current in n region
d) Electron current in p region
View Answer
Answer: d
Explanation: Inp constitutes of the electron current in the p
region. It is the minority electron carrier in the p region.
10. Deep into the p side the current is a drift current Ipp of
holes sustained by the small electric field in the
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semiconductor. Is the statement true or false?

a) True
b) False
View Answer
Answer: a
Explanation: In the p region, the drift current is sustained
into the p region by the small electric field which is formed
at the junction in the semiconductor. So, the above
statement is true.


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Online Test
by staff20
4-5 minutes
This set of Electronic Devices and Circuits online test

focuses on “Quantitative Theory of the P-N diode Currents”.
1. What is the thickness of ‘space charge region’ or

‘transition region’ in P-N junction diode?
a) 1 micron
b) 5 micron
c) 10 micron
d) 2.876 micron
View Answer
Answer: a
Explanation: The region of the junction is depleted by
mobile charges, hence it is called space charge region or
depletion region or transition region which is 10-4 cm = 10-6
m= 1 micron.
2. If what of the following is doped into a semiconductor say

germanium a P-N junction is formed.
a) Electrons and Protons
b) Protons and Neutrons
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c) Neutrons and Electrons

d) Gallium and Phosphorus
View Answer
Answer: d
Explanation: A P-N junction is formed only when a donor
impurities and acceptor impurities are added to either side
of a semiconductor like silicon and germanium.
3. Which of the factors doesn’t change the diode current.

a) Temperature
b) External voltage applied to the diode
c) Boltzmann‘s constant
d) Resistance
View Answer
Answer: d
Explanation: I = Io [e(v/nVt) -1], as shown in this equation the
diode current is dependent on temperature , voltage applied
on the diode , Boltzmann’s constant but diode current is not
dependent on resistance as it is independent of resistance.
4. The product of mobility of the charge carriers and applied

Electric field intensity is known as
a) Drain velocity
b) Drift velocity
c) Push velocity
d) Pull velocity
View Answer
Answer: b
Explanation: When the semiconductors like silicon and
germanium is implied by an electric field the charge carriers
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when get drifted by certain velocity known as drift velocity.

Drift velocity is product of mobility of charge carriers and
field intensity.
5. The tendency of charge carriers to move from a region of

heavily concentrated charges to region of less concentrated
charge is known as.
a) Depletion current
b) Drain current
c) Diffusion current
d) Saturation current
View Answer
Answer: c
Explanation: In a semiconductor the charge will always
have a tendency to move from higher concentrated area to
less concentrated area to maintain equilibrium this
movement of charges will result in diffusion current.
6. If the drift current is 100mA and diffusion current is 1A

what is the total current in the semiconductor diode.
a) 1.01 A
b) 1.1 A
c) 900m A
d) 10 A
View Answer
Answer: b
Explanation: We know that the total current in a
semiconductor is equal to sum of both drift current and
diffusion current. Total current = 1A + 100mA =1.1A.
7. Which of the following is reverse biased?
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a) A)
b) B)
c) C)
d) D)
View Answer
Answer: c
Explanation: The P-N junction diode is forward bias when
the voltage applied to p type is greater than the n type and
vice versa, since the voltage applied to p type is less in C) it
is the answer.
8. The drift velocity is 5V and the applied electric field

intensity 20v/m what will be the mobility of charge carriers.
a) 100 m2/ (vs)
b) 4 m2/ (vs)
c) 15 m2/ (vs)
d) 0.25 m2/ (vs)
View Answer
Answer: d
Explanation: We know that mobility of charge carriers is drift
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velocity divide by applied electric field intensity. Mobility =

drift velocity / field intensity.
9. When there is an open circuit what will be the net hole

current.
a) 5A
b) 0.05A
c) 0.5A
d) 0A
View Answer
Answer: d
Explanation: If there is any current present under open
circuit there will be an indefinite growth of holes at one end
of the semiconductor which is practically not possible hence
zero amperes.
10. Rate of change of concentration per unit length in a

semiconductor is called as.
a) Concentration change
b) Concentration mixture
c) Concentration gradient
d) Concentration variant
View Answer
Answer: c
Explanation: In a semiconductor the holes as well as
electrons which are the charge carriers is not equally
concentrated on all regions of the semiconductor the
change in their rate is referred as concentration gradient.

5 of 6 3/16/18, 9:06 AM

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Volt Ampere Characteristics Questions and Answers about:reader?url=https://www.sanfoundry.com/...
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Volt Ampere Characteristics

by staff20
4-5 minutes

Questions & Answers (MCQs) focuses on “The Volt Ampere
Characteristics”.
1. The voltage equivalent of temperature (Vt) in a P-N

junctions is given by.
a) T/1000 volts
b) T/300 volts
c) T/1600 volts
d) T/11600 volts
View Answer
Answer: d
Explanation: We know that the P-N junction is temperature
dependent, it varies with the change in temperature the
measure of change that is the voltage equivalent of
temperature is given by Vt = T/11600 volts.
2. At room temperature what will be voltage equivalent of

temperature.
a) 10 mV
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b) 4.576 mV
c) 26 mV
d) 98 V
View Answer
Answer: c
Explanation: Room temperature is 27o C = 300 k .We know
that Vt= T/11600 volts by substituting the value of T we get
300/11600 = 26mV.
3. In a P-N junction the positive voltage at which the diode

starts to conduct consequently is called.
a) Cut off voltage
b) Saturation voltage
c) Knee voltage
d) Breakdown voltage
View Answer
Answer: c
Explanation: At a certain critical voltage, a large reverse
current flows and the diode is said to be in breakdown
region, at this region the diode will be forward biased and
starts to conduct consequently.
4. In volt ampere characteristics the current increases with

voltage _________
a) Exponentially
b) Equally
c) Sinusoidal
d) Unequally
View Answer
Answer: a
2 of 5 3/16/18, 9:06 AM
Explanation: The current in the volt ampere characteristics

increases exponentially with respect to voltage I(t) = eV(t).
5. The cut off voltage for diode of silicon semiconductor and

germanium semiconductor is ____ volts.
a) 0.5 and 0.1
b) 0.7 and 0.3
c) 1 and 0.5
d) 0.5 and 1
View Answer
Answer: b
Explanation: The cut off voltage is the voltage only after
which the semiconductors conduct, the cut off voltage for
silicon is 0.7V in the sense the silicon diode will conduct
only when voltage is more than 0.7V and 0.3 for
germanium.
6. What would be the current and voltage when there is no

external voltage applied on the diode?
a) 0
b) 0.7
c) 0.3
d) 1
View Answer
Answer: a
Explanation: When there is no external voltage applied on
the circuit it acts as an open circuit and there will be no flow
of charges hence the current and voltage will be zero.
7. In P-N junction V-I characteristics during forward biased,

at what region the current increase is very low.
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a) Saturation
b) Depletion
c) Cut off
d) Breakdown
View Answer
Answer: b
Explanation: In the V-I characteristics the change in the
current with respect to voltage is very less in depletion
region due to the large resistance in the circuit as the
resistance deceases by a certain value the current
increases exponentially with voltage.
8. In a P-N junction diode during forward bias if the current

increases more than the value that is rated will destroy the
diode.
a) True
b) False
View Answer
Answer: a
Explanation: If the current in the P-N junction diode during
forward bias increases beyond the value rated on it will
destroy the diode because voltage is directly proportional to
current so extreme voltage will burn the diode down.
9. When the P-N junction diode is forward bias the current

in circuit is controlled by.
a) External voltage
b) Capacitance
c) Resistance
d) Internal voltage
4 of 5 3/16/18, 9:06 AM
View Answer
Answer: c
Explanation: When the P-N junction is in forward bias that is
the p side connected to the positive terminal of voltage
source the current in the circuit can be varied by varying the
resistance, the current flow decreases as the resistance
increases and vice versa.
10. The P-N junction diode conducts in which direction.

a) Reverse direction
b) Forward direction
c) Both Forward and Reverse direction
d) Neither Forward nor Reverse direction
View Answer
Answer: b
Explanation: The P-N junction diode conducts only in
forward direction, it will not conduct in reverse direction so
only Zener Diode was introduced as it conducts in both
forward and reverse direction.


and Answers.
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Test
by staff20
4-5 minutes
This set of Electronic Devices and Circuits test focuses on

“The Temperature Dependence of P-N Characteristics”.
1. The magnitude of the electric charge (e) is given by

____________
a) -1.6*10-19 C
b) 1.6*10-19 C
c) 9.11*10-31 C
d) 1.637*10-37 C
View Answer
Answer: a
Explanation: The charge of the electron is the magnitude of
electric force that an electron exerts on other particles
which is equal to -1.6*10-19 C, the negative sign indicates
the direction of force.
2. What is the forbidden gap voltage for silicon material?

a) 1.46 V
b) 1.56 V
c) 10 V
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d) 1.21 V
View Answer
Answer: d
Explanation: The forbidden gap voltage of a material is
numerically equal to forbidden gap energy of the material
which is 1.21 joules for silicon so forbidden gap voltage will
be 1.21 V.
3. Which of the following parameters of P-N junction diode

increases with temperature.
a) Cut in voltage
b) Reverse saturation current.
c) Ideality factor
d) Resistance
View Answer
Answer: b
Explanation: Reverse saturation current at temperature T2
is 2[(T2 –T1)/10] times greater than reverse saturation current
at temperature T1 where T2 is greater than T1.
4. Which of the following diodes do not exhibits a constant

reverse saturation current with the change in reverse
saturation voltage.
a) 1N909
b) 1N405
c) 1N207
d) 1N676
View Answer
Answer: c
Explanation: 1N207 is the germanium diode for which the
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reverse saturation current is not constant which the change

in voltage due to the leakage in the surface of the diode and
due to the generation of new current carriers.
5. Which of these P-N junction characteristics are not

dependent on temperature.
a) Junction resistance
b) Reverse saturation current
c) Bias current
d) Barrier voltage
View Answer
Answer: a
Explanation: As the temperature of the P-N junction
increases the current increases and the voltage decreases
so the barrier voltage, reverse saturation current, bias
current changes with temperature but junction resistance is
independent of temperature.
6. As the temperature to the P-N junction increases the

current increases due to?
a) Leakage in bias region
b) Electron-hole pair
c) Leakage in P region
d) Leakage in N region
View Answer
Answer: b
Explanation: As the temperature to the P-N junction
increases the mobility of charges increases thus increases
the electron-hole pair which proportionally increases the
current in the P-N junction diode.
3 of 5 3/16/18, 9:06 AM
7. By what percentage the reverse saturation current

increases with 10 C rise in the temperature.
a) 25%
b) 12.5%
c) 50%
d) 7%
View Answer
Answer: d
Explanation: As the temperature to the P-N junction diode
increases the mobility of charges increases thus increasing
the current, the reverse saturation current increases by 7%
with 10C rise in temperature and doubles with every 100C
rise in temperature.
8. What will be the decrease of barrier voltage with the rise

in 10C in temperature?
a) 10V
b) 1mV
c) 10mV
d) 2mV
View Answer
Answer: d
Explanation: As the temperature to the P-N junction diode
increases the voltage across the junction decreases and
the current increases with every degree rise in temperature
the barrier voltage increases by 2mV.
9. What will be the reverse saturation current in the junction

when the voltage across the junction is 0?
a) 0.3A
4 of 5 3/16/18, 9:06 AM
b) 0.7A
c) 0A
d) 1.24A
View Answer
Answer: c
Explanation: When the voltage across the junction is zero in
the sense there will be potential difference between the
junctions hence there will be no movement of electrons and
holes, hence the current will be 0.
10. The breakdown voltage of the P-N junction diode

decreases due to the increase in.
a) Reverse saturation current
b) Reverse leakage current
c) Bias voltage
d) Barrier voltage
View Answer
Answer: b
Explanation: Breakdown voltage of the diode is inversely
proportional to the reverse leakage current so it decreases
with the increase in reverse leakage current.


tests, here is complete set of 1000+ Multiple Choice
5 of 5 3/16/18, 9:06 AM
Diode Resistance - Electronic Devices and Circui... about:reader?url=https://www.sanfoundry.com/...
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Diode Resistance - Electronic

Devices and Circuits Questions
and Answers
by staff10
4-5 minutes

Questions & Answers (MCQs) focuses on “Diode
Resistance”.
1. The static resistance R of the diode is given by

__________
a) V/I
b) V*I
c) V+I
d) V-I
View Answer
Answer: a
Explanation: According to Ohms law the electric current in
the circuit is directly proportion to voltage and inversely
proportional to resistance so, R=V/I.
2. In the volt ampere characteristics of the diode, the slope

of the line joining the operating point to the origin at any
point is equal to reciprocal of the _________
1 of 5 3/16/18, 9:07 AM
a) resistance
b) conductance
c) voltage
d) current
View Answer
Answer: a
Explanation: In the diode’s volt ampere characteristics, the
line joining the operating point and the origin, at any point of
the line is equal to the conductance so, it is reciprocal of the
resistance.
3. At room temperature (VT = 26) what will be the

approximate value of r when n=1 and I=100mA?
a) 26 ohms
b) 2.6 ohms
c) 260 ohms
d) 2600 ohms
View Answer
Answer: c
Explanation: We know that R= (n*VT) /I, by substituting the
value of n, VT, I we get R= 260 ohms, (1*26)/100*10-3 =
260 ohms.
4. In the diode volt ampere characteristics what will be the

resistance if a slope is drawn between the voltages 50 to
100 and corresponding current 5 to 10?
a) 5 ohms
b) 10 ohms
c) 50 ohms
d) 100 ohms
2 of 5 3/16/18, 9:07 AM
View Answer
Answer: b
Explanation: We know that, in volt ampere characteristics
the resistance is equal to the reciprocal of the line joining
the origin and operating point, R = dV/dI, by substituting the
value of dV and dI we get R= 10ohms.
5. In piecewise linear characteristics what will be the RF

value if the slope is 0.5?
a) 25 m ohms
b) 50 m ohms
c) 2 ohms
d) 10 ohms
View Answer
Answer: c
Explanation: In piecewise linear characteristics the forward
resistance will be equal to reciprocal of the slope so, RF =
1/slope, RF = 1/0.5 which is equal to 2 ohms.
6. A diode will behave as an open circuit if the voltage in the

circuit is less than __________
a) cut off voltage
b) saturation voltage
c) leakage voltage
d) threshold voltage
View Answer
Answer: d
Explanation: The diode made up of semiconductor has a
certain threshold voltage only after which it behave as
closed circuit in the sense it performs some operation if the
3 of 5 3/16/18, 9:07 AM
threshold voltage is greater than the voltage in circuit.
7. What will be the approximate value of thermal voltage of

diode?
a) 25mV at 300K
b) 30mV at 180K
c) 25mV at 180K
d) 30mV at 300K
View Answer
Answer: a
Explanation: We know that the thermal voltage of diode is
approximately equal to room temperature which is 300K
then for all practical purpose the thermal voltage of diode is
taken as 25mV so it will be 25mV at 300K.
8. What will be the thermal voltage of the diode if the

temperature is 300K?
a) 25.8 mV
b) 50 mV
c) 50V
d) 19.627 mV
View Answer
Answer: a
Explanation: The thermal voltage of the diode is given by,
VT = KT/q, by substituting the values of T, K which is
Boltzmann constant and q which is the charge of the
electron we get VT = (300*1.38*10-23)/ (1.602*10-19), VT=
25.8mV.
9. What will be the diode resistance if the current in the

circuit is zero?
4 of 5 3/16/18, 9:07 AM
a) 0 ohms
b) 0.7 ohms
c) 0.3 ohms
d) 1 ohms
View Answer
Answer: a
Explanation: When the current in the circuit is zero there will
be no flow of charges to resist hence the diode resistance
will be zero.
10. Which of these following is not a characteristic of an

ideal diode?
a) Perfect conductor when forward bias
b) Zero voltage across it when forward bias
c) Perfect insulator when reverse bias
d) Zero current through it when forward bias
View Answer
Answer: d
Explanation: The diode acts as an ideal diode when it is a
perfect conductor and has zero voltage across it during
forward bias, a perfect insulator and zero current through it
during reverse bias.


and Answers.
5 of 5 3/16/18, 9:07 AM
Diode capacitances - Electronic Devices and Cir... about:reader?url=https://www.sanfoundry.com/...
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Diode capacitances - Electronic

and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “Diode
Capacitances”.
1. Compared to a PN junction with NA=1014/CM3, which

one of the following is true for NA=ND= 1020/CM3?
a) depletion capacitance decreases
b) depletion capacitance increases
c) depletion capacitance remains same
d) depletion capacitance can’t be predicted
View Answer
Answer: b
Explanation: We know, CT=Aε/W and
W ∝ (1/NA+1/ND) 1/2. So, CT ∝ (1/NA+1/ND)-1/2
So when NA and ND increases, depletion capacitance CT
increases.
2. If CT is the transition capacitance, which of the following

are true?
1 of 6 3/16/18, 9:07 AM
1) in forward bias, CT dominates

2) in reverse bias, CT dominates
3) in forward bias, diffusion capacitance dominates
4) in reverse bias, diffusion capacitance dominates
a) 1 only
b) 2only
c) 2 and 3
d) 3 only
View Answer
Answer: c
Explanation: In reverse bias condition, depletion region
increases and acts as an insulator or dielectric medium. So,
the transition capacitance increases. In forward bias
condition, due to stored charge of minority carriers, diffusion
capacitance increases.
3. For an abrupt PN junction diode, small signal

capacitance is 1nF/cm2 at zero bias condition.If the built in
voltage, Vbi is 1V, the capacitance at reverse bias of 99V
is?
a) 0.1nF/cm2
b) 1nF/cm2
c) 1.5nF/cm2
d) 2nF/cm2
View Answer
Answer: a
Explanation: Cjo is the capacitance at zero bias, that is
VR=0V, Cjo=Cj for VR=0V. We know, Cj = Cjo/(1+(VR/Vbi))m
, m=1/2 for abrupt. So, putting Cj=0.1nF/cm2 where,
2 of 6 3/16/18, 9:07 AM
VR=99V and Vbi=1V we get, Cjo= 0.1(1+99)1/2 = 0.1nF/cm2.
4. The built in capacitance V0 for a step graded PN junction

is 0.75V. Junction capacitance Cj at reverse bias when
VR=1.25V is 5pF. The value of Cj when VR=7.25V is?
a) 0.1pF
b) 1.7pF
c) 1pF
d) 2.5Pf
View Answer
Answer: d
Explanation: We know, Cj1/ Cj2=[(V0+VR2)/(V0+VR2)]1/2
So, Cj2=Cj1/ {(0.75+7.25)/(0.75+1.25)}1/2 we get Cj2=Cj1 /2
=5/2=2.5Pf.
5. Consider an abrupt PN junction. Let V0 be the built in

potential of this junction and VR be the reverse bias voltage
applied. If the junction capacitance Cj is 1pF for V0+VR
=1V, then for V0+VR =4V what will be the value of Cj?
a) 0.1pF
b) 1.7pF
c) 1pF
d) 0.5Pf
View Answer
Answer: d
Explanation: We know, Cj1/ Cj2=[(V0+VR2)/(V0+VR1)]1/2
Cj2=Cj1(1/4)1/2=1/2 .
We get Cj2=1/2=0.5pF.
6. A silicon PN junction diode under revers bias has

depletion width of 10µm, relative permittivity is 11.7 and
3 of 6 3/16/18, 9:07 AM
permittivity, ε0 =8.85×10-12F/m. Then depletion capacitance

/m2 =?
a) 0.1µF/m2
b) 1.7µF/m2
c) 10µF/m2
d) 0.5µF/m2
View Answer
Answer: c
Explanation: We know, CT =Aε0εr /W
CT/A= (8.85×10-12)(11.7)/10
=10
By putting the values we get 10µF/m2.
7. The transition capacitance, CT of a PN junction having

uniform doping in both sides, varies with junction voltage as
________
a) (VB )1/2
b) (VB )-1/2
c) (VB )1/4
d) (VB )-1/4
View Answer
Answer: b
Explanation: CT = K/(V0+VB)1/2
As it’s having uniform doping on both sides, the voltage V0
will be zero. So, CT=K/(VB)1/2. The variation of transition
capacitance with built in capacitance is (VB )-1/2.
8. The CT for an abrupt PN junction diode is ________

a) CT = K/(V0+VB)1/2
b) CT = K/(V0+VB)-1/2
4 of 6 3/16/18, 9:07 AM
c) CT = K/(V0+VB)1/3
d) CT = K/(V0+VB)-1/3
View Answer
Answer: a
Explanation: For an abrupt PN junction diode, CT =
K/(V0+VB)n. Here, n=1/2 for abrupt PN junction diode and
1/3 for linear PN junction diode. When the doping
concentration of a diode varies within a small scale of area,
then the diode is called as an abrupt diode.
9. The diffusion capacitance of a PN junction _______

a) decreases with increasing current and increasing
temperature
b) decreases with decreasing current and increasing
temperature
c) increasing with increasing current and increasing
temperature
d) doesnot depend on current and temperature
View Answer
Answer: b
Explanation: CD =τ I /n0 VT
Where, I is the current and VT is temperature factor. The
diffusion capacitance is directly proportional to current and
indirectly proportional to the temperature.
10. Transition capacitance is also called as _______

a) diffusion capacitance
b) depletion capacitance
c) conductance capacitance
d) resistive capacitance
5 of 6 3/16/18, 9:07 AM
View Answer
Answer: b
Explanation: Transition capacitance occurs in reverse bias.
We obtain a depletion layer in that case. Hence it’s also
called as depletion capacitance. The diffusion capacitance
occurs in forward bias.


and Answers.
6 of 6 3/16/18, 9:07 AM
PN Diode Switching Times Questions and Answers about:reader?url=https://www.sanfoundry.com/...
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PN Diode Switching Times

by staff10
6-7 minutes

Questions & Answers (MCQs) focuses on “PN Diode
Switching Times”.
1. Diode acts as a short circuit when switched from forward

to reverse bias for some time due to______
a) Accumulation of minority charge carriers when it’s in
forward bias
b) Accumulation of majority charge carriers when it’s in
forward bias
c) Accumulation of minority charge carriers when it’s in
reverse bias
d) Accumulation of majority charge carrier when it’s in
reverse bias
View Answer
Answer: a
Explanation: When a diode is switched suddenly, it persists
the conducting property for a short time in its reverse bias
also. This leads to excess minority charge carrier settlement
1 of 7 3/16/18, 9:07 AM
at potential barrier. Hence acts as a short circuit.
2. Reverse recovery time for a diode is?

a) Time taken to eliminate excess minority charge carriers
b) Sum of storage time (TS) and transition time (TT)
c) Time taken to eliminate excess majority charge carriers
d) Time elapsed to return to non conduction state
View Answer
Answer: a
Explanation: The time period for which diode remains in
conduction state even in reverse direction is called storage
time. The time elapsed to return the non conduction state is
called transition time. Their sum is called reverse recovery
time.
3. Switching speed of P+ junction depends on.

a) Mobility of minority carriers in P junction
b) Life time of minority carriers in P junction
c) Mobility of majority carriers in N junction
d) Life time of minority carriers in N junction
View Answer
Answer: d
Explanation: Switching leads to move holes in P region to N
region as minority carriers. Removal of this accumulation
determines switching speed. P+ regards to a diode in which
the p type is doped excessively.
4. Time taken for a diode to reach 90% of its final value

when switched from steady state is______
a) 2.3*time constant
b) 2.2*time constant
2 of 7 3/16/18, 9:07 AM
c) 1.5*time constant
d) equals the time constant
View Answer
Answer: b
Explanation: Time constant = RC. To reach 90% of the final
value, time taken is 2.2 of RC. Time constant is the time
required to discharge the capacitor, through the resistor, by
36.8%.
5. Which of the following are true?

1) In reverse bias, the diode undergoes stages of storage
and transition times
2) Minority charge carriers accumulation makes the diode
as a short circuit
3) Storage time is the sum of recovery and transition times
a) 1 only
b) 2 and 3
c) 3 only
d) 1 and 2 only
View Answer
Answer: d
Explanation: When a diode is switched from forward to
reverse bias, storage and transition times takes place. The
accumulation time or the life time of minority carriers makes
it a short circuit. The conduction property is holds for a short
period of time in reverse bias also.
6. In a circuit below, the switch is at position 1 at t<0 and at

position 2 when t=0. Assume diode has zero voltage drop
and storage time. For 0<t<ts, the VR at 1k ohm resistor is
3 of 7 3/16/18, 9:07 AM
given by_____
a) 5V
b) -5V
c) 0v
d) 10V
View Answer
Answer: b
Explanation: At position ‘1’ when connected to +5V, the
diode is forward biased and acts as a short circuit. So, VR is
5V. For 0<t<ts VR is -5V as the diode is in reverse bias. But
it holds the conductive property within the storage time
period. So, V is -5V.
7. The switch is at position shown in the figure initially and

steady state is from t=0 to t=to. The switch suddenly is
thrown to the other position. The current flowing through the
10K resistor from t=0 is?
4 of 7 3/16/18, 9:07 AM
a) 1mA
b) 2mA
c) -2mA
d) -1mA
View Answer
Answer: c
Explanation: Initially, the diode is in forward bias. When
suddenly switched to reverse bias, upto a storage time limit,
it conducts during storage time period.
We know that, current I=V/R=-20/10K=-2mA.
8. A PN junction diode with 100Ω resistor is forward biased

such that 100A current flows. If voltage across this
combination is instantaneously reversed to 10V at t=0, the
reverse current that flows through diode at t=0 is?
5 of 7 3/16/18, 9:07 AM
a) 10mA
b) 100mA
c) -100mA
d) -10mA
View Answer
Answer: b
Explanation: At t=0, V=-10V. During storage time, current
still flows.
We know that,
current I=V/R=10/100Ω=100mA from N to P region.
9. The delay in switching between the ON and OFF states

is due to _________
a) The time required to change amount of excess minority
carriers stored in quasi-neutral regions
b) The time required to change amount of excess majority
carriers stored in quasi-neutral regions
c) The conduction between storage time and recovery time
d) The exponential increase in carriers in N region
View Answer
Answer: a
Explanation: When switched instantaneously it stays in a
6 of 7 3/16/18, 9:07 AM
quasi state i.e.., temporary state which stores charges. The

delay is produced due to this charge settlement. The diode
needs to discharge these excess carriers in order to return
the non conduction stage.
10. The delay time can be reduced by?

a) decreasing lifetime and increasing ratio of reverse to
forward current
b) increasing lifetime and decreasing ratio of reverse to
forward current
c) increasing lifetime and increasing ratio of reverse to
forward current
d) decreasing lifetime and decreasing ratio of reverse to
forward current
View Answer
Answer: a
Explanation: When the current increases the depletion layer
decreases and the storage and transition time decreases. A
decreased depletion layer can easily discharge the excess
carrier and thereby lessens the delay time.


and Answers.
7 of 7 3/16/18, 9:07 AM
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Breakdown Diodes - Electronic

and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “Breakdown
Diodes”.
1. A zener diode works on the principle of_________

a) tunneling of charge carriers across the junction
b) thermionic emission
c) diffusion of charge carriers across the junction
d) hopping of charge carriers across the junction
View Answer
Answer: a
Explanation: Due to zener effect in reverse bias under high
electric field strength, electron quantum tunneling occurs.
It’s a mechanical effect in which a tunneling current occurs
through a barrier. They usually cannot move through that
barrier.
2. Which of the following are true about a zener diode?

1) it allows current flow in reverse direction also
1 of 7 3/16/18, 9:07 AM
2) it’s used as a shunt regulator

3) it operates in forward bias condition
a) 3 only
b) 1 and 2
c) 2 and 3
d) 2 only
View Answer
Answer: b
Explanation: The operation of a zener diode is made in
reverse bias when breakdown occurs. So, it allows currnt in
reverse direction. The most important application of a zener
diode is voltage or shunt regulator.
3. When the voltage across the zener diode

increases_________
a) temperature remains constant and crystal ions vibrate
with large amplitudes
b) temperature increases and crystal ions vibrate with large
amplitudes
c) temperature remains constant and crystal ions vibrate
with smaller amplitudes
d) temperature decreases and crystal ions vibrate with large
amplitudes
View Answer
Answer: b
Explanation: When voltage is increased, the tunnelling at
reverse bias increases. The voltage rises temperature. The
crystal ions with greater thermal energy tend to vibrate with
larger amplitudes.
2 of 7 3/16/18, 9:07 AM
4. For the zener diode shown in the figure, the zener

voltage at knee is 7V, the knee current is negligible and the
zener dynamic resistance is 10Ω. If the input voltage (Vi)
ranges from 10 to 16 volts, the output voltage (Vo) ranges
from?
a) 7 to 7.29V
b) 6 to 7V
c) 7.14 to 7.43V
d) 7.2 to 8V
View Answer
Answer: c
Explanation: If i is the current flowing, then V0=10i+7
i=(VI-7)/210. By substituting, if VI=10V then i=1/70 and
V0=(1/7)+7=7.14V
if VI =16V then i=3/70 and V0=(3/7)+7=7.43V.
5. In the circuit below, the knee current of ideal zener diode

is 10mA. To maintain 5V across the RL, the minimum value
of RL is?
3 of 7 3/16/18, 9:07 AM
a) 120
b) 125
c) 250
d) 100
View Answer
Answer: b
Explanation: Here, IKNEE=10mA, VZ=5V. I=IL+IZ. I=
(10-5)/100=50mA
Now, 50=10+ILMAX .
ILMAX=40mA. RLMIN=5/40mA=125 Ω.
6. The zener diode in the circuit has a zener voltage of 5.8V

and knee current of 0.5mA. The maximum load current
drawn with proper function over input voltage range
between 20 and 30V is?
a) 23.7mA
b) 20mA
c) 26mA
4 of 7 3/16/18, 9:07 AM
d) 48.3mA
View Answer
Answer: a
Explanation: Here, I1MAX=IZMIN+ILMAX.
IZMIN =0.5mA, I1MAX =(V1MAX-VZ )/RS . Putting the values
we get , I1MAX =24.2mA.
So, 24.2-0.5=23.7mA.
7. In the given limiter circuit, an input voltage Vi=10sin100πt

is applied. Assume that the diode drop is 0.7V when it’s
forward biased. The zener breakdown voltage is 6.8V.The
maximum and minimum values of outputs voltage are
_______
a) 6.1V,-0.7V
b) 0.7V,-7.5V
c) 7.5V,-0.7V
d) 7.5V,-7.5V
View Answer
Answer: c
Explanation: With VI= 10V when maximum, D1 is forward
biased, D2 is reverse biased. Zener is in breakdown region.
VOMAX=sum of breakdown voltage and diode
drop=6.8+0.7=7.5V. VOMIN=negative of voltage drop=-0.7V.
There will be no breakdown voltage here.
5 of 7 3/16/18, 9:07 AM
8. The 6V Zener diode shown has zener resistance and a

knee current of 5mA. The minimum value of R so that the
voltage does not drop below 6V is?
a) 1.2Ω
b) 80 Ω
c) 50 Ω
d) 70 Ω
View Answer
Answer: b
Explanation: Here, Vz =6V, IZMIN=5mA.IS=IZMIN+ILMAX.
80=5+ILMAX . ILMAX=75Ma.RLMIN=VI/ILMAX=6/75mA
=80 Ω.
9. Avalanche breakdown in zener diode is ______

a) electric current multiplication takes place
b) phenomenon of voltage multiplication takes place
c) electrons are decelerated for a period of time
d) sudden rise in voltage takes place.
View Answer
Answer: a
Explanation: The carriers in transition region are
accelerated by electric field to energies. That energies are
sufficient to create electron current multiplication. A single
6 of 7 3/16/18, 9:07 AM
carrier that is energized will collide with another by gaining

energy. Thus an avalanche multiplication takes place.
10. The zener diode is heavily doped because______

a) to have low breakdown voltage
b) to have high breakdown voltage
c) to have high current variations
d) to maintain perfect quiescent point
View Answer
Answer: a
Explanation: The value of reverse breakdown voltage at
which zener breakdown occurs is controlled by amount of
doping. If the amount of doping is high, the value of voltage
at which breakdown occurs will decrease. Better doping
gives a sooner breakdown voltage.


and Answers.
7 of 7 3/16/18, 9:07 AM
Tunnel Diodes & its Characteristics Questions a... about:reader?url=https://www.sanfoundry.com/...
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Tunnel Diodes & its

Characteristics Questions and
Answers
by staff10
6-7 minutes

Questions & Answers (MCQs) focuses on “Tunnel Diodes
and its Characteristics”.
1. If ‘X’ corresponds to a tunnel diode and ‘Y’ to an

avalanche diode, then__________
a) X operates in reverse bias and Y operates in forward
bias
b) X operates in reverse bias and Y operates in reverse
bias
c) X operates in forward bias and Y operates in forward
bias
d) X operates in forward bias and Y operates in reverse
bias
View Answer
Answer: d
Explanation: In forward bias, negative resistance helps for
tunnel diode to operate. Here, the current decreases with
1 of 6 3/16/18, 9:08 AM
increase in voltage. If they are used in reverse bias, they

are called as back diodes. Avalanche diode operates in
reverse bias at breakdown region.
2. The range of tunnel diode voltage VD, for which slope of

its V-I characteristics is negative would be? (The VP is the
peak voltage and VV is the valley voltage).
a) VD > 0
b) 0D < VP
c) VV > VD > VP
d) VD > VV
View Answer
Answer: c Explanation: In tunnel diode characteristics, the

slope is negative in the region between VV and VP. Here, it
offers negative resistance. The characteristics are depicted
below:
3. Tunnel diode has a very fast operation in__________
a) gamma frequency region
b) ultraviolet frequency region
c) microwave frequency region
d) radio frequency region
View Answer
Answer: c
2 of 6 3/16/18, 9:08 AM
Explanation: Tunnel diode is a type of semiconductor which

works on tunneling effect of electrons in microwave region.
So, tunnel diode has a very fast operation in microwave
region.
4. Which of the following are true about a tunnel diode?

1) it uses negative conductance property
2) it operates at high frequency
3) fermilevel of p side becomes higher than the n side in
forward bias
a) 1 only
b) 1 and 2
c) 3 only
d) 2 and 3
View Answer
Answer: b
Explanation: The negative resistance property helps in the
operation of tunnel diode. As the tunnel diode works at high
frequency, its applications are mostly in that range. High
frequency oscillators are based on the resonant tunneling
diode.
5. The depletion layer of tunnel diode is very small

beacause______
a) its abrupt and has high dopants
b) uses positive conductance property
c) its used for high frequency ranges
d) tunneling effect
View Answer
Answer: a
3 of 6 3/16/18, 9:08 AM
Explanation: When the P and N regions are very highly

doped, the depletion layer comes closer. The tunnel diode
is also highly doped. Its doping concentration varies within a
small scale. So it’s an abrupt diode. For these reasons, the
depletion region is small.
6. With interments of reverse bias, the tunnel current also

increases because________
a) electrons move from balance band of pside to conduction
band of nside
b) fermi level of pside becomes higher than that of nside
c) junction currrent decreases
d) unequality of n and p bandedge
View Answer
Answer: a
Explanation: When the forward bias is increased, the tunnel
current is also increased upto a certain limit. This happens
when the electron movement takes place from P to N side.
7. The tunnneling involves_______

a) acceleration of electrons in p side
b) movement of electrons from n side conduction band to p
side valance band
c) charge distribution managementin both the bands
d) positive slope characteristics of diode
View Answer
Answer: b
Explanation: Tunneling means a direct flow of electrons
across small depletion region from N side conduction band
to P side valance band. The electrons begin to accelerate in
4 of 6 3/16/18, 9:08 AM
the N side of the semiconductor.
8. Tunnel diodes are made up of________

a) Germanium and silicon materials
b) AlGaAs
c) AlGaInP
d) ZnTe
View Answer
Answer: a
Explanation: Germanium and silicon materials have low
band gaps and flexibility. That matches tunnel diode
requirements. The remaining materials emits the energy in
terms of light or heat.
9. For a tunnel diode, when ‘p’ is probability that carrier

crosses the barrier, ’e’ is energy,’w’ is width.
a) p ∝ e(-A*e*w)
b) p ∝ 1/ e(-A*e*w)
c) p ∝ e(A*e*w)
d) p ∝ 1/e(A*e*w)
View Answer
Answer: a
Explanation: The carrier jump occurs without any loss of
energy due to small depletion layer. The probability of the
carrier to jump across a barrier depends on the energy and
width of the band. This variess exponentially for a given
carrier.
10. In the construction of tunnnel diode,why is the pellet

soldered to anode contact and a tindot to cathode contact
via a mesh screen?
5 of 6 3/16/18, 9:08 AM
a) for better conduction and reduce inductance respectively

b) for heat dissipation and increase conduction respectively
c) for heat dissipation and reduce induction respectively
d) for better conduction and reduce inductance respectively
View Answer
Answer: c
Explanation: Anode goes through better heat dissipation.
So the pellet is used for the purpose. The tindot via mesh
screen resists inductive effects caused at the cathode.
Conduction is an independent factor which can’t be
controlled.
11. What happens to a tunnel diode when the reverse bias

effect goes beyond the valley point?
a) it behaves as a normal diode
b) it attains increased negative slope effects
c) reverse saturation current increases
d) beacomes independent of temperature
View Answer
Answer: a
Explanation: After the valley point is crossed, the tunnel
diode obtains positive slope resistance. That is similar to
the characteristics of a normal diode. So it behaves like a
normal diode after beyond valley point.


and Answers.
6 of 6 3/16/18, 9:08 AM
PIN Diodes & its Characteristics Questions and... about:reader?url=https://www.sanfoundry.com/...
sanfoundry.com
PIN Diodes & its Characteristics

by staff10
4-6 minutes

Questions & Answers (MCQs) focuses on “p-i-n Diode and
its Characteristics”.
1. PIN diode is a photosensitive diode because of _______

a) large current flow in p and n region
b) depletion layer increases giving a larger surface area
c) stronger covalent bonds
d) low carrier storage
View Answer
Answer: b
Explanation: An intrinsic layer that is sandwiched between p
and n layers. This gives a larger surface area making it
compatible for photosensitivity. Reverse bias causes an
increased depleted region in a PIN diode.
2. During forward bias, the PIN diode acts as _______

a) a variable resistor
b) a variable capacitor
c) a switch
1 of 5 3/16/18, 9:08 AM
d) an LED
View Answer
Answer: a
Explanation: In forward bias, the forward resistance
decreases and acts as a variable resistor. The low
frequency model of a PIN diode neglects the input
capacitive values.
3. During reverse bias, the PIN diode acts as _______

a) Variable resistor
b) Switch
c) Variable capacitor
d) LED
View Answer
Answer: c
Explanation: In reverse bias, the intrinsic layer is completely
covered by depletion layer. The stored charges vanishes
acting like a variable capacitor. The high frequency model
of a PIN diode neglects the input resistances.
4. When the p and n regions are used for high resistivity,

the depletion region at the respective places is called
_________
a) Q and ϒ regions
b) ϒ and π regions
c) Q and π regions
d) π and ϒ regions
View Answer
Answer: d
Explanation: When p region is used for high resistance, the
2 of 5 3/16/18, 9:08 AM
depletion layer is high at p side.When n side is used the

depletion layer is high at n side. They are called as π and ϒ
regions respectively.
5. The applications for PIN diode are __________

a) Microwave switch
b) LED
c) Voltage regulator
d) Amplifier
View Answer
Answer: a
Explanation: Being employed at 300Hz, the swept voltage is
attained at π region.Then it’s used as a microwave switch.
Swept voltage is nothing but, the voltage at which the
complete intrinsic layer is swept out as a depleted one.
6. In high frequency model, the values of resistance ‘R’ and

capacitance ‘C’ are _______
a) 0.1 to 10KΩ and 0.02 to 2pF respectively
b) 1 to 10KΩ and 0.02 to 2pF respectively
c) 10 to 100KΩ and 0.02 to 2pF respectively
d) 0.1 to 10KΩ and 2 to 20pF respectively
View Answer
Answer: a
Explanation: At high frequency, the applied values for
resistance and capacitance is 0.1 to 10KΩ and 0.02 to 2pF
respectively. At high frequencies, it almost acts as a perfect
resistor.
7. What happens in PIN diode for low frequency model?

a) reactance decreases
3 of 5 3/16/18, 9:08 AM
b) conductance increases
c) resistance increases
d) reactance increases
View Answer
Answer: d
Explanation: In a low frequency model, the resistance
decreases and reactance increases.Here the variable
resistance is neglected. At low frequencies, the charge can
be removed and the diode can be turned off.
8. Which of the following is true about a PIN diode?

a) it’s photosensitive in reverse bias
b) it offers low resistance and low capacitance
c) it has a decreased reversed breakdown voltage
d) carrier storage is low
View Answer
Answer: a
Explanation: Due to increased depletion region, the
covalent bonds break and increase the surface area for
photosensitivity. This property is used in fields of light
sensors, image scanners, artificial retina systems.
9. In the application of frequency models, the value of

forward current is _____
a) IF = A(µPP + µNN)q
b) IF = A(µPN + µNP)q
c) IF = A(µPP – µNN)q
d) IF = A(µPN – µNP)q
View Answer
Answer: a
4 of 5 3/16/18, 9:08 AM
Explanation: The forward current depends on mobility and

carrier concentration. In frequency models, the value of
forward current is IF = A*(µPP + µNN)q. Where, µP and µN
are the mobility of p and n type charge carriers respectively.
10. The forward resistance for a PIN diode is given by

________
a) RF = W/σP
b) RF = W/σN
c) RF = WσP
d) RF = WσN
View Answer
Answer: b
Explanation: Forward resistance for a PIN diode depends
on the width, current density and positive carrier
concentration of the diode. No diode is perfectly ideal. In
practise, a diode offers a small resistance in forward bias
which is called as forward resistance.


and Answers.
5 of 5 3/16/18, 9:08 AM
Point Contact Diode - Electronic Devices and Ci... about:reader?url=https://www.sanfoundry.com/...
sanfoundry.com
Point Contact Diode - Electronic

and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “The Point
Contact Diode”.
1. The materials that are used in the construction of point

contact diode are _________
a) Silicon
b) SnTe or Bi2Te3
c) GaS or CdS
d) HgI
View Answer
Answer: b
Explanation: The diode base of SnTe or Bi2Te3 is highly
detection sensitive. They are mechanically stable over long
periods of use either as harmonic generators or mixers.
They are emphasized in the 2-200THz region.
2. Which of the following are true?

1) point contact diode has a metal whisker to make
1 of 6 3/16/18, 9:08 AM
pressure contact during its operation

2) it has high voltage rating
3) its V-I characteristics are constant
4) it has low breakdown voltage
a) 1 and 2
b) 3 only
c) 1 and 4
d) 2 only
View Answer
Answer: c
Explanation: The diode contains a die of a semiconductor
material on which an epitaxial layer is deposited. It uses the
metal whisker to make pressure contact against that layer.
It has a low breakdown voltage.
3. In the forward bias condition, the resistance of point

contact diode is_________
a) less than that of a general PN diode
b) greater than that of a general PN diode
c) equal to that of a general PN diode
d) varies exponentially than that of a general PN diode
View Answer
Answer: a
Explanation: The current flow of the point contact diode is
not independent of voltage applied to the crystal unlikely to
a general PN diode. This characteristic of contact diode
makes its capacitance high at high frequency. A small
capacitive current flows in the circuit.
4. The barrier layer capacitance of a point contact diode
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is_________
a) 0.1pF to 1pF
b) 5pF to 50pF
c) 0.2pF to 2pF
d) 0.008µF to 20µF
View Answer
Answer: a
Explanation: The barrier capacitance at the point is very low
about 0.1pF to 1pF. The capacitance between the cat
whisker and crystal is less compared to junction diode
capacitance between both sides of the diode. For a general
PN diode is 0.008µF to 20µF.
5. The cat whisker wire present in the contact diode is used

for_________
a) for heat dissipation
b) for charge transfer between sections
c) maintaining the pressure between sections
d) preventing current flow
View Answer
Answer: c
Explanation: The operation of a contact diode depends on
the pressure of contact between semiconductor crystal and
point. The cat whisker wire presses against the crystal to
form a section and the section allows the current flow. This
is similar to the behaviour of PN diode.
6. The semiconductor junctions those are present in a

contact diode_________
a) beryllium-copper and bronze-phosphor
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b) beryllium-phosphor and bronze-copper

c) mercury-iodine
d) tin-tungsten
View Answer
Answer: a
Explanation: The diode contains two sections having a
small rectangular crystal of N type silicon and a fine
beryllium-copper and bronze-phosphor. It has a tungsten
wire which is called as a cat whisker wire. This helps in
pressing one section to other.
7. The application of a contact diode is_________

a) Clampers and clippers
b) Voltage multipliers
c) Rectifiers
d) AM detectors
View Answer
Answer: d
Explanation: The point contact diodes are the oldest
microwave semiconductor devices. They were developed
during world war 2. They have excessive applications in
microwave fields and used as receivers and detectors.
8. The operating frequencies of the point contact diode

is_________
a) 30KHz or above
b) 10GHz or above
c) 30GHz or above
d) 10KHz or above
View Answer
4 of 6 3/16/18, 9:08 AM
Answer: b
Explanation: It’s used in high frequency conversions and
circuits in the order of 10KHz or above. The reactance due
to capacitance is high and at high frequency a very small
capacitive current flows.
9. During the manufacture of point contact diode, why is a

relatively large current passed from cat whisker to silicon
crystal?
a) to control the amount of current flow
b) to form small region of p type material
c) to allow mechanical support for the sections
d) to form anode and cathode regions
View Answer
Answer: b
Explanation: The behaviour of a contact diode is similar to
that of a PN diode. It has a tungsten wire which is called as
a cat whisker wire. This helps in pressing one section to
other.
10. What is the capacitive reactance across the point

contact diode when compared to normal PN junction diode
a) lower
b) higher
c) equal
d) cannot be determined
View Answer
Answer: a
Explanation: The current flow of the point contact diode is
not independent of voltage applied to the crystal unlikely to
5 of 6 3/16/18, 9:08 AM
a general PN diode. A small capacitive current flows in the

circuit.


and Answers.
6 of 6 3/16/18, 9:08 AM

Questions & Answers On Semiconductor-Diode Characteristic

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Electronic Devices and Circuits Interview Quest... about:reader?url=https://www.sanfoundry.com/...

Electronic Devices and Circuits

This set of Electronic Devices and Circuits Interview

1. The donor ions is represented by a positive plus sign. Is

2. Initially, the p-type carriers are located to

3. The displacement of the charges results in

Answer: The flow of carriers in a semiconductor results in

4. What is the value of 1 micron?

5. Which of the following results when the equilibrium

6. Which of the following options doesn’t defined for the

7. Under the open-circuited conditions the net hole current

8. The un-neutralised ions in the neighbourhood of the

9. Which of the following doesn’t defines for the junction

10. Convert 10 micron to meters.

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits for

P-N Junction as a Diode -

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1. How many junction/s do a diode consist?

2. If the positive terminal of the battery is connected to the

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7. When the diode is reverse biased with a voltage of 6V

8. It is possible to measure the voltage across the potential

9. What will be the output of the following circuit? (Assume

10. Which of the following formula represents the correct

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To practice all areas of Electronic Devices and Circuits,

Electronic Devices and Circuits

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2. Which of the following equations represent the correct

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b) Valence band edge of n material

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Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits for

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1. When a forward biased is applied to a diode, the

2. The number of injected minority carriers falls off linearly

3. What is the total current in a diode when x=0?

4. The current in the diode is

5. The current is constant throughout the device. Is it true or

6. Which of the following statements is correct under

7. Calculate the total current when Ipn (0)=1mA and Inp

8. What is the hole current in the p region of the diode?

9. What does Inp represent?

semiconductor. Is the statement true or false?

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits for

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1. What is the thickness of ‘space charge region’ or