Beruflich Dokumente
Kultur Dokumente
Electrochromism in amorphous tungsten oxide films has lithiated samples, we deposited 200–300 nm of LiAlF4 solid
been extensively studied since it was discovered in 1969.1 electrolyte on top of the a-WO3 films. LiAlF4 is known to
Transmittance modulation is obtained by electrically control- have a high ionic conductivity and stability in ambient
ling the oxidation states of an electrochromic 共EC兲 electrode atmosphere.6 The electrochemical insertion and removal of
and a counter electrode by inserting or extracting small alkali lithium in the a-WO3 films was carried out in a dry box
metal ions.2 Understanding the mechanism of ion insertion using 1 M LiClO4 in propylene carbonate 共PC兲 as an elec-
into a-WO3 films is one of the key issues that remains to be trolyte with lithium metal as both a reference and a counter
resolved to better understand the coloring/bleaching process electrode.
in EC devices because this mechanism determines the re- The lithium ion diffusion in the a-Lix WO3 films was
sponse time and the durability of the device. It has been studied with alternating current 共ac兲 impedance spectros-
reported that the chemical diffusion coefficients of lithium copy, using a Solartron model 1260/1265. An ac impedance
ions in a-WO3 thin films are influenced by lithium concen- spectrum is obtained by measuring the complex impedance
tration in the films and are closely related to the of the WO3 working electrode as a function of the applied
microstructure.3–5 However, the exact mechanism that can frequency, f , which we varied between 50 kHz and 0.001
explain the relationship between the chemical diffusion co- Hz. The electrical behavior of an ion-insertion electrode in a
efficients of lithium ions and the microstructural changes of liquid electrolyte is well known to be equivalent to the so-
the a-WO3 films with lithium insertion is not clear as yet. called Randles circuit 关Fig. 1共a兲兴. Here, R e is the electronic
Therefore, finding a correlation between the chemical diffu- resistance of the system, R ct is the charge transfer resistance
共interfacial reaction resistance兲, C dl is the double layer ca-
sion of lithium ion and the microstructure of the a-WO3
pacitance of the electrode-electrolyte interface, Z w is the so-
films, as well as the chemical and physical characteristics of
called Warburg diffusion impedance 共ionic diffusion in the
a-WO3⫺y films, can provide important insight into the
electrode兲, C L is the limiting capacitance, and R L is the lim-
mechanism of ion insertion into a-WO3 films and eventually
iting resistance. The complex impedance spectrum 共Nyquist
result in improved device performance. In this work, we
Plot兲 of the circuit in Fig. 1共a兲 shows three regions corre-
have studied the effect of the microstructural changes in
sponding to high, low, and intermediate frequencies 关Fig.
amorphous lithiated tungsten oxide (a-Lix WO3) films on the
1共b兲兴. In particular, the analyses of the response in the low
chemical diffusion of lithium ions as a function of lithium
frequency, limiting capacity regions, allow us to obtain the
concentration and have correlated these kinetic properties
value of the diffusion coefficient, D, in the a-Lix WO3 films,
with changes in the Raman spectra resulting from electro-
by the use of the equation
chemical ion insertion or extraction.
The a-WO3 films used in this study were prepared on l2
polished stainless steel substrates by evaporation of WO3 D⫽ , 共1兲
3C L R L
powder of purity 99.99%. The thickness of the samples was
about 250 nm. In order to prevent water absorption into the where l is the thickness of the a-Lix WO3 film.7–9 The Ra-
man spectra were taken in the quasibackscattering geometry
a兲
Electronic mail: slee@nrel.gov using 100 mW of the 514.5 nm line of an Ar ion laser. The
Level of
lithium insertion D
x in Lix WO3 R L 共⍀兲 C L 共mF兲 (⫻10⫺11 cm2/sec兲
1
S. K. Deb, Appl. Opt. 3, 192 共1969兲; Philos. Mag. 27, 801 共1973兲.
inserted lithium ions and electrons preferentially go to 2
C. G. Granqvist, Handbook of Inorganic Electrochromic Materials
W6⫹⫽O bonds than to the O–W6⫹ –O bonds. 共Elsevier, New York, 1995兲, p. 5.
To date, many groups have separately reported on Ra- 3
G. Xu and L. Chen, Solid State Ionics 28–30, 1726 共1998兲.
4
man spectroscopic results and diffusion kinetic results. How- J.-G. Zhang, C. E. Tracy, D. K. Benson, and S. K. Deb, J. Mater. Res. 8,
2649 共1996兲.
ever, all these investigations have been done independently, 5
S.-I. Pyun and J.-S. Bae, J. Alloys Compd. 245, L1 共1996兲.
resulting in little correlation between the chemical diffusion 6
T. Oi, K. Miyauchi, and K. Uehara, J. Appl. Phys. 53, 1823 共1982兲.
7
of lithium ions and the microstructure of the a-WO3 films. A C. Ho, I. D. Raistrick, and R. A. Huggins, J. Electrochem. Soc. 127, 343
survey of the literature indicates that there are no obvious 共1980兲.
8
C. Bohnke and O. Bohnke, Solid State Ionics 39, 195 共1990兲.
general trends in the diffusion constant and Raman measure- 9
J. Wang and J. M. Bell, Sol. Energy Mater. Sol. Cells 58, 411 共1999兲.
ments. Delichere et al.15 and Paul and Lassegues16 observed 10
Y. Shigesato, A. Murayama, T. Kamimori, and K. Matsuhiro, Appl. Surf.
that upon H⫹/Li⫹ insertion, an increase of the W6⫹⫽O peak Sci. 33Õ34, 804 共1988兲.
at ⬃950 cm⫺1 occurs, while Otsuka et al.17 showed that a
11
J. V. Gabrusenoks, P. D. Chikmach, A. R. Lusis, J. J. Kleperis, and G. M.
Ramans, Solid State Ionics 14, 25 共1984兲.
depression of the W6⫹⫽O peak occurs with lithium inser- 12
S.-H. Lee, H. M. Cheong, J.-G. Zhang, A. Mascarenhas, D. K. Benson,
tion. With respect to diffusion constants, Zhang et al.4 re- and S. K. Deb, Appl. Phys. Lett. 74, 242 共1999兲.
13
ported a decrease of diffusion coefficients of lithium ions at S.-H. Lee, H. M. Cheong, J.-G. Zhang, C. E. Tracy, A. Mascarenhas, D.
K. Benson, and S. K. Deb, Electrochim. Acta 44, 3111 共1999兲.
low insertion levels, while Pyun and Bae5 reported an in- 14
S.-H. Lee, H. M. Cheong, C. E. Tracy, A. Mascarenhas, A. W. Czanderna,
crease in diffusion coefficients of lithium ions at low inser- and S. K. Deb, Appl. Phys. Lett. 75, 1541 共1999兲.
tion levels. 15
P. Delichere, P. Falaras, M. Froment, A. Hugot-Le Goff, and B. Aguis,
Our results show that there is a direct correlation be- Thin Solid Films 161, 35 共1988兲.
16
J. L. Paul and J. C. Lassegues, J. Solid State Chem. 106, 357 共1993兲.
tween the diffusion coefficient and the W6⫹⫽O/O–W6⫹ –O 17
T. Ohtsuka, N. Goto, and N. Sato, J. Electroanal. Chem. 287, 249 共1990兲.
ratio. Hence, we propose a new diffusion mechanism in 18
J. Nagai, T. Kamimori, and M. Mizuhashi, Sol. Energy Mater. Sol. Cells
a-Lix WO3 films that can also explain the seemingly contra- 13, 279 共1986兲.