KSR2102

KSR2102

Switching Application (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10KΩ, R2=10KΩ)
• Complement to KSR1102

1 SOT-23
1. Base 2. Emitter 3. Collector

Equivalent Circuit
Marking C

R1
R5 2 B

R2

PNP Epitaxial Silicon Transistor

E
Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -10 V
IC Collector Current -100 mA
PC Collector Dissipation 200 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -10µA, IE=0 -50 V
BVCEO Collector-Emitter Breakdown Voltage IC= -100µA, IB=0 -50 V
ICBO Collector Cutoff Current VCB= -40V, IE=0 -0.1 µA
hFE DC Current Gain VCE= -5V, IC= -5mA 30
VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V
fT Current Gain Bandwidth Product VCE= -5mA, IC= -10V 200 MHz
Cob Output Capacitance VCB= -10V, IE=0 5.5 pF
f=1.0MHz
VI(off) Input Off Voltage VCE= -5V, IC= -100µA -0.5 V
VI(on) Input On Voltage VCE= -0.3V, IC= -10mA -3 V
R1 Input Resistor 7 10 13 KΩ
R1/R2 Resistor Ratio 0.9 1 1.1

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSR2102
Typical Characteristics

1000 -100
VCE = - 5V VCE = - 0.3V
R1 = 10 K R1 = 10 K
R2 = 10 K R2 = 10 K

VI(on)[V], INPUT VOLTAGE

hFE, DC CURRENT GAIN

-10

100

-1

10 -0.1
-1 -10 -100 -1000 -0.1 -1 -10 -100

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Input On Voltage

280
VCE = - 5V
-1000 R1 = 10 K 240
IC [µ A], COLLECTOR CURRENT

PC[mW], POWER DISSIPATION

R2 = 10 K
200

160

-100 120

80

40

-10 0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 25 50 75 100 125 150 175

o
V I(OFF)[V], INPUT OFF VOLTAGE Ta[ C], AMBIENT TEMPERATURE

Figure 3. Input Off Voltage Figure 4. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSR2102
Package Demensions

SOT-23

0.20 MIN
0.45~0.60
0.40 ±0.03
±0.10

±0.10
1.30

2.40

0.03~0.10

0.38 REF

0.40 ±0.03 +0.05

0.12 –0.023

0.96~1.14
2.90 ±0.10
0.97REF

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E