MJE13008/13009

MJE13008/13009

High Voltage Switch Mode Application

• High Speed Switching
• Suitable for Switching Regulator and Motor Control

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transisor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: MJE13008 600 V
: MJE13009 700 V
VCEO Collector-Emitter Voltage
: MJE13008 300 V
: MJE13009 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: MJE13008 IC = 10mA, IB = 0 300 V
: MJE13009 400 V
IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 mA
hFE * DC Current Gain VCE = 5V, IC = 5A 8 40
VCE = 5V, IC = 8A 6 30
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 1A 1 V
IC = 8A, IB = 1.6A 1.5 V
IC = 12A, IB = 3A 3 V
VBE (sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 1A 1.2 V
IC = 8A, IB = 1.6A 1.6 V
Cob Output Capacitance VCB = 10V, f = 0.1MHz 180 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
tON Turn ON Time VCC = 125V, IC = 8A 1.1 µs
tSTG Storage Time IB1 = - IB2 = 1.6A 3 µs
RL = 15,6Ω µs
tF Fall Time 0.7
* Pulse test: PW≤300µs, Duty cycle≤2%

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

 MJE13008/13009
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100 10

VCE = 5V IC = 3 IB
hFE, DC CURRENT GAIN

1 V BE(sat)

10

0.1
VCE (sat)

1 0.01
0.1 1 10 100 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000 10000

VCC =125V
IC=5IB
tR, tD [µ s], TURN ON TIME
Cob[pF], CAPACITANCE

100 1000
tR

10 100 tD, V BE(off)=5V

1 10
0.1 1 10 100 1000 0.1 1 10 100

VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance Figure 4. Turn On Time

10000 100

VCC =125V
IC =5IB
tSTG, tF [µs], TURN OFF TIME

IC[A], COLLECTOR CURRENT

10

10
0µ
s
1m
DC

tSTG
s

1000 1

0.1

tF MJE13008
MJE13009
100 0.01
0.1 1 10 100 1 10 100 1000

IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn Off Time Figure 6. Safe Operating Area

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

 MJE13008/13009
Typical Characteristics (Continued)

120

100
PC[W], POWER DISSIPATION

80

60

40

20

0
0 25 50 75 100 125 150 175

o
TC[ C], CASE TEMPERATURE

Figure 7. DC current Gain

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

 MJE13008/13009
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ PowerTrench® SyncFET™

Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ VCX™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ UHC™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOS™ MICROWIRE™ LILENT SWITCHER®
EnSigna™ OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST® POP™ SuperSOT™-8

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when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. G