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Cree Rede�nes the Discrete Power MOSFET

Landscape with the Industry's First 900-V SiC
MOSFET

5-6 minutos

New device performance eclipses incumbent silicon solutions, providing

signi�cant system-level performance and cost advantages in a range of
high-frequency power-electronics applications

DURHAM, NC -- Cree, Inc. (Nasdaq: CREE) a market leader in silicon

carbide (SiC) power products, has introduced its latest breakthrough
in SiC power device technology: the industry’s �rst 900-V MOSFET
platform. Optimized for high-frequency power-electronics
applications, including renewable-energy inverters, electric-vehicle
charging systems, and three-phase industrial power supplies, the new
900-V platform enables smaller and higher-e�ciency next-generation
power conversion systems at cost parity with silicon-based solutions.

“As a technology leader in SiC power, we’re committed to breaking

the performance barriers that really matter to the power conversion
design community,” said Dr. Cengiz Balkas, vice president and general
manager, Cree Power and RF. “When compared to equivalent silicon
MOSFETs, this breakthrough 900-V platform enables a new market for
our products by broadening the power range we can address in end
systems. Following our 1200-V MOSFETs, which exhibit superior
performance to high-voltage IGBTs, we are now able to out-perform
lower-voltage superjunction silicon MOSFET technology at 900 V. This
platform delivers vastly superior characteristics, thereby providing
power designers with the potential to innovate smaller, faster, cooler,
and more-e�cient power solutions. Without question, it is beyond the
reach of anything currently achievable with silicon.”

Built on Cree’s industry-leading SiC planar technology, the new 900-V

MOSFET platform expands the product portfolio to address design
challenges common to new and evolving application segments in
which a higher DC-link-voltage is desirable. The lead product
(C3M0065090J) features the lowest on-resistance rating (65 mΩ) of
any 900-V MOSFET device currently available on the market.
Moreover, in addition to the industry-standard TO247-3 and TO220-3
packages, the new device is also o�ered in a low-impedance D2Pak-7L
surface-mount package with a Kelvin connection to help minimize
gate ringing.

Existing 900-V silicon MOSFETs have severe limitations for high-

frequency switching circuits due to extremely high switching losses
and poor internal body diodes. Further limiting the use of silicon
MOSFETs is the RDS(ON) that increases three times over temperature,
which causes thermal issues and signi�cant derating. Alternately,
Cree’s new 900-V MOSFET technology delivers low R DS(ON) at higher
temperatures, enabling a signi�cant size reduction of the thermal-
management system.

The C3M0065090J is rated at 900 V/32 A, with an R DS(ON) of 65 mΩ

at 25° C. At higher temperature operation (TJ = 150° C), the RDS(ON)
is just 90 mΩ. Packaged parts will be stocked through DigiKey and
Mouser.

For more information, please visit www.cree.com/power or click on

the embedded product number link above to access product data
sheets, tools, and support and to �nd your local distributor.

About Cree
Cree is leading the LED lighting revolution and making energy-wasting
traditional lighting technologies obsolete through the use of energy-
e�cient, mercury-free LED lighting. Cree is a market-leading
innovator of lighting-class LEDs, LED lighting, and semiconductor
products for power and radio frequency (RF) applications.

Cree’s product families include LED �xtures and bulbs, blue and green
LED chips, high-brightness LEDs, lighting-class power LEDs, power-
switching devices and RF devices. Cree® products are driving
improvements in applications such as general illumination,
backlighting, electronic signs and signals, power suppliers and solar
inverters.

Please refer to www.cree.com for additional product and company

information.

This press release contains forward-looking statements involving risks

and uncertainties, both known and unknown, that may cause actual
results to di�er materially from those indicated. Actual results may
di�er materially due to a number of factors, including the risk that
actual savings and lifetimes will vary from expectations; the risk we
may be unable to manufacture these new products with su�ciently
low cost to o�er them at competitive prices or with acceptable
margins; the risk we may encounter delays or other di�culties in
ramping up production of our new products; customer acceptance of
our products; the rapid development of new technology and
competing products that may impair demand or render Cree’s
products obsolete; and other factors discussed in Cree’s �lings with the
Securities and Exchange Commission, including its report on Form
10-K for the year ended June 29, 2014, and subsequent �lings.