CS 23

Phase Control Thyristors VRRM = 800-1600 V

IT(RMS) = 50 A
IT(AV)M = 32 A

TO-208AA 2
VRSM VRRM Type
(TO-48)
VDSM VDRM 1 2 3
V V
900 800 CS 23-08io2 3
1300 1200 CS 23-12io2
1700 1600 CS 23-16io2

1 M6

1 = Anode, 2 = Cathode, 3 = Gate

Symbol Test Conditions Maximum Ratings Features

●
Thyristor for line frequencies
IT(RMS) TVJ = TVJM 50 A ●
International standard package
IT(AV)M Tcase = 85°C; 180° sine 25 A
JEDEC TO-208AA
Tcase = 69°C; 180° sine 32 A ●
Planar glassivated chip
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 450 A ●
Long-term stability of blocking
VR = 0 t = 8.3 ms (60 Hz), sine 480 A currents and voltages
TVJ = TVJM t = 10 ms (50 Hz), sine 400 A Applications
VR = 0 t = 8.3 ms (60 Hz), sine 430 A ●
Motor control
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 1010 A2s
●
Power converter
VR = 0 t = 8.3 ms (60 Hz), sine 970 A2s
●
AC power controller

TVJ = TVJM t = 10 ms (50 Hz), sine 800 A2s Advantages

VR = 0 t = 8.3 ms (60 Hz), sine 770 A2s ●
Space and weight savings
●
Simple mounting
(di/dt)cr TVJ = TVJM repetitive, IT = 75 A 150 A/ms ●
Improved temperature and power
f = 50 Hz, tP =200 ms
cycling
VD = 2/3 VDRM
IG = 0.3 A non repetitive, IT = IT(AV)M 500 A/ms
diG/dt = 0.3 A/ms

(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/ms

RGK = ¥; method 1 (linear voltage rise) Dimensions in mm (1 mm = 0.0394")

PGM TVJ = TVJM tP = 30 ms 10 W

IT = IT(AV)M tP = 300 ms 5 W
PG(AV) 0.5 W

VRGM 10 V

TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C

Md Mounting torque 2.7-3.3 Nm

24-29 lb.in.
Weight 12 g

Data according to IEC 60747

740

IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-3

 CS 23

Symbol Test Conditions Characteristic Values

IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM £ 3 mA
VT IT = 80 A; TVJ = 25°C £ 1.8 V
VT0 For power-loss calculations only (TVJ = 125°C) 1.0 V
rT 10 mW
VGT VD = 6 V; TVJ = 25°C £ 2.5 V
TVJ = -40°C £ 3.5 V
IGT VD = 6 V; TVJ = 25°C £ 50 mA
TVJ = -40°C £ 80 mA
VGD TVJ = TVJM; VD = 2/3 VDRM £ 0.2 V
IGD £ 1 mA
IL TVJ = 25°C; tP = 10 ms £ 200 mA
IG = 0.15 A; diG/dt = 0.15 A/ms
IH TVJ = 25°C; VD = 6 V; RGK = ¥ £ 100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £ 2 ms
IG = 0.15 A; diG/dt = 0.15 A/ms
tq TVJ = TVJM; IT = 25 A, tP = 300 ms; di/dt = -20 A/ms typ. 60 ms
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
RthJC DC current 1.0 K/W
RthJH DC current 1.61 K/W
dS Creepage distance on surface 1.5 mm
dA Strike distance through air 1.5 mm
a Max. acceleration, 50 Hz 50 m/s2

Accessories:
Nut M6 DIN 439/SW14
Lock washer A6 DIN 128

4 102 120
typ. lim.
V ms A
C
100
B TVJ= 125°C
3 TVJ= 25°C
VG tgd IT
B 101 80
IGT: TVJ= -40°C
IGT: TVJ= 0°C

2 60
IGT: TVJ= 25°C

B
lim.

100 40
1 typ.
20
A
IGD: TVJ= 25°C
IGD: TVJ=125°C
0 10-1 0
0 25 50 75 mA 100 10-2 10-1 100 A 101 0.0 0.5 1.0 1.5 2.0 V 2.5
IG t VT
Fig. 1 Gate voltage and gate current Fig. 2 Gate controlled delay time tgd Fig. 3 On-state characteristics
Triggering:
A = no; B = possible; C = safe

© 2000 IXYS All rights reserved 2-3

 CS 23

500 1000 40
VR = 0 V
2
A 800
A s A
50Hz, 80%VRRM TVJ = 45°C
400 600
ITSM TVJ = 45°C 30
I2t
TVJ = 125°C IT(AV)M
TVJ = 125°C
300 400

20

200

200
10
100

0 100 0
10-3 10-2 10-1 100 s 101 1 2 3 4 5 6 7 ms
8 910 0 50 100 °C 150
t t Tcase
Fig. 4 Surge overload current Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at
ITSM: crest value, t: duration case temperature 180° sine
80
W
RthJA :
60 1.9 K/W
PT 2.3 K/W

2.7 K/W

40 2.7 K/W
DC
180° sin 4.3 K/W
120° 6.1 K/W
60°
20 30°

0
0 10 20 30 40 50 A 0
60 50 100 °C 150
IT(AV)M Tamb
Fig. 7 Power dissipation versus on-state current and ambient temperature
RthJH for various conduction angles d:

K/W d = 30° d RthJH (K/W)

d = 60° DC 1.61
180° 1.85
2 d = 120° 120° 2.03
ZthJH d = 180° 60° 2.35
30° 2.60
d = DC
Constants for ZthJH calculation:
i Rthi (K/W) ti (s)
1
1 0.224 0.003
2 0.132 0.028
3 0.321 0.216
4 0.522 1.1
5 0.249 4.2
0 6 0.162 43.2
10-3 10-2 10-1 100 101 102 103 s 104
t
Fig. 8 Transient thermal impedance junction to heatsink

© 2000 IXYS All rights reserved 3-3