.

k
31/1

13
¥ .

ES 104
,
31/1/2017

Semiconductor Diodes

Quit )
Next "%
friday
qpM
Nihar
 Eint

p ⇐
¥
Oo
-0+0
-0 @
N

In = 0
±

* Donor ions in the right side of the

junction because of electron

transfer from n
top
*
Acceptor ions in the left side

hole
of the
junction
because of
transfer from P to n

* internal electric field Eint

,

from n
to P

movement
* Eint opposes of
electrons and holes

* Current ID is zero
,
 p

#
n

Dt
An
eint
-

÷ caywoe
-

I t
t
←

p 0+0
-0+0
-0 n

@
→
¥ Eapp

✓
D

* Total field across the

junction
Eint -

Eapp ( from n to P )

* Reduction in field allows

electron transfer from n to P

and hole transfer from P ton

* There is a net current Is

,

* is the summation of
Is
electron and hole current
 #¥ It
Eint
±
¥
←

p
oo
-0+0 m

@ TO

→
Is
←
Eapp
.

UD

* Total field across the junction

Eint +
Eapp ( from n to P )

* Increase in electric field across

the
junction ( m to P ) further
restricts the movement of
electrons from n to P and

holes from P to n .

* Only the electrons in P ( less in

number ) and holes in n ( less number )

Could move across the
junction
* Is is
very Small ( Reverse

saturation current Is )
 i
EEHIIIE

PHI
 Its =
Is [ e¥t - , ]
Y, = Applied Voltage
Vt =

KIQ =
thermal
voltage
( 26mV at RT )

n= Ideality factor
C t
for Ge ,
2 for Si )
when Y, ⇒ 3nF

Is
e↳1nVt
=
Is

ZNVT
when VD ( < -

Is = -

Is

when Up = 0

Is = 0
 )
( linear

-
Forward
'

@
^

Reverse Bias

IT
Brtv
11

✓ )
(
'

BR , linear
>
:
.

Is
.

Vd→
.

GENTRY
V ,3r=f( doping ) Turn
.
on

✓
outage
Doping } Yzrp
* ✓
Doping

* Is depends on
doping
and material

lower
*
higher the
doping
the Is

* lower the bandgap , higher

Is ,ae=ldIs& the Is Is
.ge > >
Is .si
 ID -
Is[e↳h✓I ] ,

Assume n=1 VT = 26mV

,

Is =
IOFA = 1514A '

✓D/n✓t Is
1-
µ_#
↳ El
11
'
0

#
- 1
0
05
0.923 2.52×10
.

.l 3.846 I. 72×1513
5.769 1 -18×1512 o.w.tt

[1+0/0-15
8.06×1512

_D|qom✓0
0.2 7.692

$0.35
3.87×10-5-38.7
"
0.25 9^615 5.52×15

56m✓O
0.3 11.538 3.77×1510
13.462 2.58×159
0.4 15.385 1.77×158
-7
0.45 17^308 Ii 21×10
-7
0.5 19-231 8.27×10

0.55 21.154 5.66×156

° '
6 23.077
-
4
0.65 25 2.65×10 265

0.7 26.923 1^81×10-3

-2
0.75 28.846 1
-24×10
 Fr Ge ,
Is = 10nA

T
→

⇒
- 8

.
84×158
4^68×157
3.2×156
§
of i.

1 -
03×153
702×153
5×154150
2.19×155219
4. 8×152

3.29×151
2- 25

15.4

105
 has lower
Germanium
turn on
voltage compared
to silicon .
 #
73
Tz

A T,

Tl <
Tz L Tz
Tnt

¥
D
'

von win decrease

with
temperature .

Reverse
Saturation current is
^

exponentially dependent an

temperature .
Constant Model of
Voltage
a

di

Is
T

•
>
✓
on
b→
✓
Is W
VD 7 on =

Va ( Vow Into
 ←
'

problem Si diode
'

0.5mA
]

Diploma
we wish

to a
carry

IDI
Ix T R, of
§ current
1km
| 05mA for
-3mA
me\ Ix
-
= I .

Determine the

?
required Is

0.8

ID= 0%6
0.5mA =
Is e

Is =
? 2.17×15 "amp .
 "
problem ( Be )
/ T→= Is exp

We have received the circuit shown

above and wish to determine R ,

and Measurements indicate

.FM#IIID.v.=vtentEs
Is .

that when 1.2 ✓ and

I×=tmA V×=

Ix = 2mA when Vx = 1. SV .
Calculate

R and ?
tf
,
Is
1mA

ln8ID=
p→=
vx
-

Ix =L ✓×= ZV =D
MA
,
1.
,IR= -

Rg R
,

I×= 2mA , Ux = 1. 8 ✓ IR=

R
RMA -
If
R

-±rI
) )
1.2

(
= 0.026 b
'

Is

( )
⇐ ) ¥
1.8 =
0.026
ln K
,

R = 1. zksz

Is = 4.29×634 Amp
 logarithmic
Amp

VI.
¥%T
⇒
.

÷met¥t .vn .

=
Iz

Vogt
*T
-

=
Is e

vote enter
-

✓ out = -
t ln
VII.
=
-2.34 log VINISR
,
 Turf
IL

vin→¥µ_
→

Di

µ in
V out

Ty =
Iz

Is EVE =
Sort
R
,

✓ out =
-

Is R eV%r
,

exponential a

anti -

log
amp .

ab

¥- our
'l-|
Rz

a
as
T
 ab

( logatlogb )
e =
ab

I¥Ii*¥i⇒ .

tran
Diode and Bipolar .

are the only devices to

realize
exponential fnc .
are
F-
R ⇐
D I

aux
mm ft
turn
r

←ml→t
Ftse
Ft .M
.

mental
yen¥r)
|_ .

ftp.e#
-

R RA

✓y ..

T
o Vout

✓×= 4- en
Fr +
✓+h¥r
=

Vt lu Ab_ ✓ out =
-

1¥ Vy
Is2R2
if RIG ISR
=

vy ISR
Esters
=

MER
-

V out = ab
 Founqnadrantmultipliers

gut
-

v -

✓ out = M .
vi. Vz

Typically M 0.1 to reduce

'

possibility of
voltage
saturation .

It is called four quadrant

outputs
be can
since
inputs ,

positive or
negative
.

communication
→ Analog
circuit
→
squaring
etc .
 b

y
= a

to realise it
How ?
 Diode application

-
sidiodl

MKTTT
+

Vin -
D , I
1
-

Vout✓on=0i7✓
•
g

t¥⇒¥ow
to
*

0 .7✓
VD→ X~o.TV
A
of

- !
)
Vin

Vout = Vin -
For ,
 ÷
✓ out

vin¥¥I{ ⇒ufht
o

vis ,

out
x
/
/

/ Vout = Vin -0.7

i i >

07 Vin

✓ out IDR
=
,

if I is Small but :O
,
very
when D , turns on

✓ out =
Vin . 0.7
 ft
( at )

In
=
R ,
✓ Ri

nuno
out
at

:-#
'

{ rz
vi

Vin

Vinny
|-O
| | -
( 0.7 V

+
0
R ,
V out
✓ out
' '

{ Rs

.7✓

: in

V out = Vin -
IDR ,

when In =O ✓ out = Vin

,
 •
a

aD v

=
✓ ✓ 0.7
Vin - out out -

2
,
Rz

fin Vat
-
) Rz = Clout0.7 - ) Ri

+ 0.7 R
✓ out ( R
,
+ Rz ) =
Vin Rz ,

¥t÷z
✓ Vin
Ryan
out = + ° '

if R
,
=
Rz

✓ out = On 5 Vin +

0.35
÷
×

✓ out

Vin
 r§¥
turnout
V in R ,

:
when D ,
is of
's '

'Ivin
✓ out .

0
RFRZ
when D is an
,

✓ out "
Vote 0

fin
 Half Wave Rectifier

a-
#

y.FI#nt

:
.

RI
.

>
07
y ✓ in
Di of Vat 0

ENVY
=

D on ✓ out : Vin - 0.7

,

-
I. 5v

y
 :
|
0.7

:
A

TIM
ON 0 .8✓ Initial
voltage
×
the
of
across

itq
capacitor
is zero .

&i-VanEl tz

⇐|_[÷
r
5 o .

>

T
 ✓
. when Vin > 0.7

D is The

k$4
-
on
,
.

|
will start
capacitor
changing .

Max .

cap Voltage
✓c,max= Vin ,ma×
-
0.7 ✓

0.8 ✓

p
 If the resistor in

a
half wave rectifier
is
replaced by a

capacitor fixed ,
a

output
is
voltage
obtained since the

capacitor has no
path
to
discharge .
 @
is
atheism
capacitor to

:
⇐
change .

~n§is
✓ out ( t ) =
( Vp .
Von ) exp ( I. )
To ensure a small ripple ,
RLC ,

must be much
greater than

to . t
,
.
 1
I

Vout has
For
large
C
, ,

Small ripple .
*Iw¥Ia
→y⇒tE¥
RC > ftst )
,
 Fullwaverectifier
→ + +

vin Ii 0
~
o
tag
→ .

D3_D4RL

-
+
RL

conduct in the
D3 Dq
half
,

positive cycle
Di
,
Dz Conduct in the
negative
half
cycle
.

:
←

-
+

money
 a -

at
* -
.

Since of period
C
only
, gets Yz
to
discharge ,
the
ripple voltage
is decreased by a factor of 2 .
 Voltage
Regulator
Load

✓ out
+ V
final

MT
7×0.7 = 4-9 ✓

T
F
T
T
I

¥
÷
 VBR

the diode breaks down when

you apply large enough reverse

bias .
The breakdown mechanism
" ' '

is called Tener breakdown .

* The zener breakdown voltage

( Vz ) could be
charged by
the maw
changing doping of

p side .
TO:
*
) i# In

dugout ,

proud

n
 #
u

:t¥¥¥⇒yty¥t
 7V
←
-

|
am

←
A 5V stabilised power supply
is
required to be
produced from
A IZV DC
power supply input
Source . The maximum
power rating
diode is QW
Pz of the Zener .

Design the regulator .

IZ ,
may
=

}¥u = 400mA

IV
Rs mini = 17.5N
,

400mA
( 20h )
IL = 51 = 5mA
I Kr
IZV
Regulated Charger

÷if