Beruflich Dokumente
Kultur Dokumente
Introduction to
Integrated Circuit Fabrication
References:
Hong Xiao, Introduction to Semiconductor Manufacturing Technology, 2nd Ed., SPIE Press, 2012
Plummer, Deal and Griffin, Silicon VLSI Technology- Fundamental, Practice and Modeling, Prentice Hall, 2000
Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication, Oxford, 2001
Quirk and Serda, Semiconductor Manufacturing Technology, Prentice Hall, 2001
C.Y. Chang and S.M. Sze, ULSI Technology, McGraw-Hill, 1996
1
Materials IC Fab
Dielectric Test
Metallization CMP
depositio
Wafers n
Design
2
Fab Cost
Clean room
Equipment, usually > $2M per tool
Materials, high purity, ultra high purity
Facilities
People, training and pay
http://www.pcper.com/reviews/General-Tech/Dawn-GLOBALFOUNDRIES
Yield
• Determine whether a fab is marking a profit or losing money.
• Related to environment, materials, equipment, processes,
and people.
• Wafer Yield
• Die Yield
• Packaging Yield
• Overall Yield
YT = YW×YD×YC
4
Yield and Profit Margin
6
Yield and Profit Margin
• For the same IC fab, if the die yield is 90%, wafer and
packaging yield are 100%, and capacity is 20,000 wafer per
month, what is the total profit margin per month?
Wafer with (a)test die and (b) test structure in scribe lines
8
Types of Contamination
• Particles
• Metallic Impurities
• Organic Contamination
• Native Oxides
• Electrostatic Discharge
Clean Room
1000
100
10
0.1
0.1 1.0 10
Particle size in micron
11
Particles/ft3
Class
0.1 μm 0.2 μm 0.3 μm 0.5 μm 5 μm
1 35 7.5 3 1
10 350 75 30 10
1000 1000 7
10000 10000 70
12
Effect of Particle Contamination
on a Photomask
Ion Beam
Dopant in PR
Particle
Photoresist
Screen Oxide
Partially Implanted Junctions
14
Cleanroom Structure
Mini-Environment Cleanroom
Keep a laminar flow is very important to achieve better than class-100 cleanliness.
The higher-class areas have a higher pressure than the lower-class areas.
15
Gowning Area
16
Three Basic Strategies for Eliminating
Particles from Cleanrooms
17
IC Process Flow
Photolithography
PR Stripping PR Stripping
RTA or Diffusion
18
Diffusion
• Primary tools:
– High-temperature diffusion furnace
• ~ 1200 oC; for oxidation, diffusion, deposition, anneals
& alloys
– Wet cleaning station
• For removing contaminations on the wafer surface
before the high-temperature processes in the furnaces
19
Quartz tube
Heater 1
Temperature-
setting voltages
Heater 2
Three-zone
Heating
Heater 3 Elements
Exhaust
Pressure
controller
20
Wafer Cleaning Equipment
• Cleaning station • Ultrasonic scrubbing
21
Photolithography
22
Photoresist
• Negative Resist
– Wafer image is opposite to mask image
– Exposed resist hardens and is insoluble
– Developer removes unexposed resist
• Positive Resist
– Mask image is the same as wafer image
– Exposed resist softens and is soluble
– Developer removes exposed resist
23
Negative Lithography
Photoresist
Oxide Oxide
Silicon substrate Silicon substrate
24
Positive Lithography
Ultraviolet light
Areas exposed to
light are dissolved.
Chrome island Shadow on
on glass mask photoresist Island
Window
photoresist
Photoresist
Exposed area
of photoresist
photoresist
Photoresist
oxide
Oxide oxide
Oxide
silicon
Silicon substrate
substrate silicon substrate
Silicon substrate
25
Wafer
Cassettes Wafer Transfer System
Wafer Start
Test/Sort
Implant
27
Etch
28
Simplified Schematic of Dry Plasma Etcher
Etchant gas entering
Gas distribution baffle gas inlet High-frequency energy
Anode electrode
RF coax cable
Photon
Electromagnetic field
- Glow discharge
Free electron - e λ (plasma)
e
Vacuum gauge
Ion sheath e
- Wafer
Cathode electrode
+ R
Chamber wall
Flow of byproducts and
process gases
Positive ion Radical
chemical
Exhaust to
vacuum pump
Vacuum line
29
Ion Implant
Simplified Schematic of Ion Implanter
Gas cabinet
Ion source
Filament
Mass resolving slit
Plasma
Acceleration column
Extraction assembly
Beamline tube
Analyzing magnet
Ion beam
Process chamber
Lighter ions
Heavy
ions
Scanning
disk
Graphite
30
Thin Films
• Purpose: deposition of dielectric and metal layers
• Operating at lower temperature than the furnaces
• Tools:
– Chemical vapor deposition (CVD)
– Metal sputtering (physical vapor deposition; PVD)
– Spin-on-glass (SOG): for planarizing the wafer surface
– Rapid thermal processor (RTP):
• annealing ion implant damage of the Si substrates & metal alloy
processing
• RTP has the ability to reach temperature quickly ~1000oC and
maintain the setpoint for several seconds
– Wet cleaning station
31
Gas inlet
Exhaust
Heat lamps
33
Downforce
Wafer carrier Polishing pad
Slurry dispenser
Wafer
Polishing
Rotating slurry
platen
34
3D packaging
Through-Silicon Via (TSV)
35
3D packaging
Through-Silicon Via (TSV)
36
3D packaging
Through-Silicon Via (TSV)
37