Sie sind auf Seite 1von 4

MJE3055T

MJE3055T

General Purpose and Switching Applications


• DC Current Gain Specified to IC =10A
• High Current Gain-Bandwidth Product : fT = 2MHz (Min.)

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor


Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector -Base Voltage 70 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 10 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 75 W
PC Collector Dissipation (Ta=25°C) 0.6 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted


Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 200mA, IB = 0 60 V
ICEO Collector Cut-off Current VCE = 30V, IB = 0 700 µA
ICEX1 Collector Cut-off Current VCE = 70V, VBE(off) = -1.5V 1 mA
ICEX2 VCE = 70V, VBE(off) = -1.5V 5 mA
@ TC = 150°C
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 5 mA
hFE *DC Current Gain VCE = 4V, IC = 4A 20 100
VCE = 4V, IC = 10A 5
VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 0.4A 1.1 V
IC = 10A, IB = 3.3A 8 V
VBE (on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 1.8 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 2 MHz
* Pulse test: PW≤300µs, duty cycle≤2% Pulse

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001


MJE3055T
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE


1000 10

VCE = 2V IC = 10I B
hFE, DC CURRENT GAIN

100 1 V BE(sat)

10 0.1

VCE (sat)

1 0.01
0.01 0.1 1 10 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

100 105

90
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT

75
10
100

1 ms
5 ms 60
0µ s

DC

45

1
30

15

0.1 0
1 10 100 0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o


Tc[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power Derating

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001


MJE3055T
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10


0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001


TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ PowerTrench® SyncFET™


Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ VCX™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ UHC™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOS™ MICROWIRE™ LILENT SWITCHER®
EnSigna™ OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST® POP™ SuperSOT™-8

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. G

Das könnte Ihnen auch gefallen