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BT134 series E
Triacs
sensitive gate
Product specification August 1997
1;3 Semiconductors Product specification

Triacs BT134 series E


sensitive gate

GENERAL DESCRIPTION QUICK REFERENCE DATA


Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose BT134- 500E 600E 800E
bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V
control applications, where high voltages
sensitivity is required in all four IT(RMS) RMS on-state current 4 4 4 A
quadrants. ITSM Non-repetitive peak on-state 25 25 25 A
current

PINNING - SOT82 PIN CONFIGURATION SYMBOL


PIN DESCRIPTION
1 main terminal 1
T2 T1
2 main terminal 2
3 gate
tab main terminal 2 1 2 3 G

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

August 1997 1 Rev 1.200


1;3Semiconductors Product specification

Triacs BT134 series E


sensitive gate

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Rth j-a Thermal resistance in free air - 100 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 3.0 15 mA
T2+ G- - 10 20 mA
T2- G- - 2.5 15 mA
T2- G+ - 4.0 20 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 2.2 15 mA
VT On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/μs
off-state voltage exponential waveform; gate open circuit
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs
time dIG/dt = 5 A/μs

August 1997 2 Rev 1.200


1;3Semiconductors Product specification

Triacs BT134 series E


sensitive gate

Ptot / W BT136 Tmb(max) / C IT(RMS) / A BT136


8 101 5

7 104 107 C
= 180 4
6 1
107
120
5 110 3
90
60
4 113
30
3 116 2

2 119
1
1 122

0 125 0
0 1 2 3 4 5 -50 0 50 100 150
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.

ITSM / A BT136 IT(RMS) / A BT136


1000 12

IT ITSM
10
T time
8
Tj initial = 25 C max

100 6
dIT /dt limit
4
T2- G+ quadrant

10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 107˚C.

ITSM / A BT136 VGT(Tj)


30 VGT(25 C) BT136
1.6
IT I TSM
25
1.4
T time
20 Tj initial = 25 C max 1.2

15
1

10 0.8

5 0.6

0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

August 1997 3 Rev 1.200


1;3 Semiconductors Product specification

Triacs BT134 series E


sensitive gate

IGT(Tj) IT / A BT136
IGT(25 C) BT136E 12
3 Tj = 125 C
T2+ G+ Tj = 25 C typ max
T2+ G- 10
2.5 Vo = 1.27 V
T2- G- Rs = 0.091 ohms
T2- G+ 8
2

6
1.5

4
1

0.5 2

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT136


IL(25 C) 10
TRIAC
3 unidirectional

2.5 bidirectional
1
2

1.5

0.1 P tp
D
1

0.5 t

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dVD/dt (V/us)


1000
IH(25C) TRIAC
3

2.5
100
2

1.5

1 10

0.5

0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical, critical rate of rise of off-state voltage,
versus junction temperature Tj. dVD/dt versus junction temperature Tj.

August 1997 4 Rev 1.200


1;3Semiconductors Product specification

Triacs BT134 series E


sensitive gate

MECHANICAL DATA

Dimensions in mm
Net Mass: 0.8 g

mounting 2.8 7.8


base 2.3 max

3.75
3.1
2.5 11.1
max

1)
2.54
max
1.2

15.3
min

1 2 3
4.58 0.5
2.29
0.88
1) Lead dimensions within this max
zone uncontrolled.

Fig.13. SOT82; pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

August 1997 5 Rev 1.200


NXP Semiconductors

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