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an optical signal using a laser (E/O converter). These repeaters limit the data
rate on the fiber because of the limited electronic amplifier band-widths. At the
end of the communications channel, the receiver consists of a photodetector,
which converts the optical signal to electrical signal, followed by an amplifier to
boost the signal level and a demodulator to decode the information. In such a
system, the information determines the data rate and the laser wavelength
determines the carrier frequency. For example, a typical system will use a laser
operating at 1.3 µm wavelength corresponding to a carrier frequency of about
176 THz (176,000 GHz), and the information will modulate the laser at a rate of
560 MHz.
The invention of optical fiber amplifiers (erbium-doped fiber amplifiers,
EDFAs) has changed the way fiber-optic communications systems are
configured. As will be described later, commercially available EDFAs can boost
an optical signal level by 30 dB or more over a significantly wide band (1530 to
1570 nm). The use of EDFAs as signal boosters at the transmitter and as
preamplifiers across the fiber and at the receiver should eliminate many of
the repeaters needed in the conventional systems described above. This is
significant because these repeaters do not allow the option of varying the data
rate over the communications system. However, the EDFAs, with their
extremely wide band, will make the fiber-optic communications system
upgradable without major changes in the configuration. In addition, since the
EDFA is a small (few inches cubed) system which can be easily coupled to the
transmission fiber, it will be possible to use a large number of EDFAs in the
system, allowing longer transmission distance. Recently, AT&T demonstrated
a 9000-km undersea system using 300 EDFAs uniformly spaced along the
fiber length.
Another development is the emergence of wavelength division multiplexing
(WDM) as a means for increasing the capacity of fiber-optic communications
systems. In WDM systems, the transmitter consists of several laser sources
operating at different wavelengths. The laser outputs are modulated and
multiplexed for transmission over the same optical fiber. At the receiver, a
demultiplexer is used to separate the channels for the appropriate
photodetector circuit as shown in Fig. 22.2. In a typical system, single-mode
semiconductor lasers are used with wavelength separation of a few nanometers
(corresponding to hundreds of GHz) and EDFAs are used as signal boosters
along the fiber. In future systems, it is expected to use channel separation of a
few GHz.
Coherent fiber-optic communications systems (Fig. 22.3) are useful for
applications requiring high sensitivity and enhanced selectivity between the
various transmitted channels. These systems, which are similar to the
heterodyne radio communications systems, consist of a transmitter which is
either frequency- or phase-modulated using frequency shift keying (FSK) or
phase shift keying (PSK) techniques. The modulated signal is transmitted
over the fiber and then received using a heterodyne, or homodyne, receiver.
The receiver requires an optical local oscillator which is used to mix with the
diameter, the mechanical layout of the filter, and the spacing of the rulings
imprinted into the grating. From Fig. 22.5, it is easy to see that with just a
diffraction grating, a more or less undefined mode is selected. Looking at the
external cavity mode spacing and the filter characteristic of the diffraction
grating, it is clear that a single-mode output is not guaranteed at all wavelengths
because several modes have comparable gain conditions and are able to lase.
The situation can be improved if the semiconductor laser chip has a flat and
smooth (ripple-free) gain characteristic. Although good antireflection coatings
can help achieve such characteristics, it is impractical to cover a very wide range
greater than 100 nm of tuning using this solution.
To improve the wavelength selectivity of the external cavity, the side-mode
filter is added to the cavity. The filter should be at least 10 times more selective
than the stand-alone grating and should have nearly no feedback loss and easy
wavelength tunability. This can be achieved by using a solid-glass Fabry-Perot
etalon with a typical bandwidth of 0.1 nm (compared to 1 nm for the stand-
alone grating).
Adjustment of the external cavity to produce a specific output wavelength
consists of selecting the appropriate angles for both the grating and the
sidemode filter. To allow continuous tuning, the reflection curve of the
diffraction grating, the transmission maximum of the filter, and the resonant
modes of the external cavity laser resonator are all shifted by the same
wavelength increment.
the output of the signal generator. In order to achieve such a tuning speed, a
clever design of the motor driver circuitry is needed. To rotate the grating to
change the wavelength of the laser, a precise stepper motor with a control board
is used. Microstepping (about 10,000 microsteps per revolution) provides a
mechanical resolution of 50 nm, and a precision switch is used to provide an
absolute reference point needed to bring the motor to the right position after a
power shutdown.
Another motor is needed to drive the single-mode filter. To ensure single-
mode operation for the signal generator, the filter must be well synchronized
with the grating drive. A dc motor with an encoder can be used to drive the
filter. The control board for the motor receives its control signals from a central
microprocessor board, which also sends control signals to the stepping motor of
the grating.
22.4 Specifications
Wavelength range. The tuning range of an external cavity laser is ultimately
limited by the width of the gain curve of the semiconductor laser chip (upper
trace in Fig. 22.2). In order for the ECL to lase, the semiconductor laser must
supply enough gain to overcome the losses of the other components in the cavity
(lenses, reflections from grating, side-mode filter). In the near-infrared region
(1.3 and 1.55 µm), typical wavelength ranges are 20 to 80 nm.
Tuning speed. This parameter is defined as the time it takes to change the
wavelength output of the ECL by a certain amount (typically 1 nm). Typical
numbers range from 1 s (for slow lasers) to 250ms (for fast lasers).
Side-mode suppression ratio. The ratio (in dB) between the power of the
fundamental mode and the power of the highest spurious mode. Using side-
mode filters, it is possible to obtain more than 50-dB suppression.
Linewidth. This parameter defines the width of the laser spectrum and is one of
the major advantages of external cavity lasers. By extending the laser cavity
length, lower linewidth values are possible. For a cavity 10 cm long, the linewidth
is about 100 kHz.
Output power. This parameter depends on the output power of the semiconductor
laser diode and the losses of the other components used inside the cavity.
Typically, external cavity lasers are capable of producing more than 100 µW of
output power.
Power stability. This parameter is defined over a certain time period (typically
1 h). It is a very important parameter since it is always desirable to generate a
stable output for long tests. Typical numbers range from ±0.05 to ±0.1 dB.
Power flatness vs. wavelength. This is one of the most important parameters of
a laser since most component testing requires constant output power. A good
ECL will have better than ±0.2 dB flatness over the tuning wavelength range.