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Physica E
journal homepage: www.elsevier.com/locate/physe
H I G H L I G H T S G R A P H I C A L A B S T R A C T
We have introduced a novel nano- We introduce a novel nano-scale SOI MOSFET structure with vertical trapezoidal doping distribution,
scale SOI MOSFET structure. additional side gate, and dual material buried insulator, and show that the on–off current ratio and the
It is based on vertical trapezoidal self-heating effect of the proposed device improve considerably rather than those of the conventional
doping distribution and additional structure.
side gate.
We have also used dual material
buried insulator to improve self-
heating.
We have shown the improvement of
Ion/Ioff and self-heating effect.
art ic l e i nf o a b s t r a c t
Article history: In this paper, we present a novel nano-scale fully depleted silicon-on-insulator metal-oxide semi-
Received 8 August 2014 conductor field-effect transistor (SOI MOSFET). On-state current increment, leakage current decrement,
Received in revised form and self-heating effect improvement are pursued in our proposed structure. The structure makes use of a
16 December 2014
buried insulator layer which consists of two materials to reduce the self-heating effect. On the other
Accepted 6 January 2015
Available online 7 January 2015
hand, to modify the sub- and super-threshold drain current, vertical trapezoidal doping distribution and
additional side gate technique are employed. Our novel transistor is named dual material buried in-
Keywords: sulator vertical trapezoidal doping SOI MOSFET (DV-SOI MOSFET). We investigate the electrical perfor-
Silicon on insulator mance and thermal behavior of the DV-SOI MOSFET using a commercial device simulator. We demon-
Self-heating
strate that the proposed structure increases on–off current ratio by orders of magnitude and considerably
Leakage current
improves self-heating effect in comparison with the conventional uniform doping fully depleted silicon-
Dual material buried insulator
Vertical trapezoidal doping on-insulator MOSFET (C-SOI) which uses side gate for better electrical performance.
Side gate & 2015 Elsevier B.V. All rights reserved.
1. Introduction MOSFETs has raised adverse short channel effects (SCEs) [1–3]. The
main short channel effects are the threshold voltage roll-off, the
To achieve higher performance and lower power consumption, degradation of the subthreshold swing, and the drain induced
transistors have been scaled in the past decades. Scaling of barrier lowering effect [2–4]. SCEs lead to the increment of the Off-
state current, and degradation of the on–off current ratio. Two
n
Corresponding author. Fax: þ 98 2333654123.
common approaches to minimize these effects are using thinner
E-mail address: sd.mohammadi@semnan.ac.ir (S. Mohammadi). gate oxide and doping the channel with a higher dose of impurity
http://dx.doi.org/10.1016/j.physe.2015.01.012
1386-9477/& 2015 Elsevier B.V. All rights reserved.
28 H. Shahnazarisani, S. Mohammadi / Physica E 69 (2015) 27–33
2. DV-SOI structure where tb is the thickness of the buried layer, Kb is the thermal
conductivity of the buried layer, and A is the effective channel
Schematic cross-sections of the DV-SOI structure and the C-SOI length multiplied by the device width that is the area over which
structure are shown in Fig. 2(a) and (b), respectively. The DV-SOI the power is generated.
structure consists of dual material buried insulator instead of just Because of the higher thermal conductivity of Si3N4
SiO2 beneath active region (channel region). Because of the higher (0.185 W K 1 cm 1) compared to that of SiO2 (0.014 W K 1 cm 1),
thermal conductivity of Si3N4 than that of SiO2, the better heat we have replaced the commonly used insulator SiO2 with silicon ni-
conduction path from the active region of the device to the tride, in the DV-SOI structure, expecting much smaller values of ΔTc in
H. Shahnazarisani, S. Mohammadi / Physica E 69 (2015) 27–33 29
Fig. 2. Cross section of the (a) DV-SOI MOSFET and (b) C-SOI MOSFET structures.
Fig. 3. Doping distribution profile in the channel for the DV-SOI and C-SOI
structures.
Table 1
Typical parameters for the DV-SOI MOSFET and
C-SOI MOSFET structures.
Parameter Value
Channel length 30 nm
Main gate length, LM 14 nm
Side gate length, LS 14 nm
Gate oxide thickness, tf 1.2 nm
Buried oxide thickness, tBOX 100 nm
Thin silicon thickness, tSi 15 nm
Thin silicon film doping, NA 1 1018
Gap length, Z 2 nm
Source/drain doping, Nd 1 1020
Gate metal work function 4.5 eV
Voltage difference, VDiff 0.3 V
p-Type substrate doping 1 1013
Si3N4 thickness, tSi3N4 87.5 nm Fig. 4. Drain current versus gate voltage characteristics of the DV-SOI and C-SOI
Buried oxide thickness up of Si3N4 12.5 nm MOSFETs in linear and logarithmic scale at VDS ¼0.5 V. The parameters of these
structures are assumed according to Table 1.
30 H. Shahnazarisani, S. Mohammadi / Physica E 69 (2015) 27–33
Fig. 5. Steady state distribution of the temperature for (a) DV-SOI MOSFET and (b) C-SOI MOSFET structures. The bias conditions for both structures are VGS ¼ 2 V and VDS
¼ 1 V. The other simulation parameters are listed in Table 1.
the DV-SOI structure in comparison with the conventional structure. where μeff,0 is the effective mobility at ambient temperature, T is
Fig. 5(a) and (b) shows the steady state heat distribution in the the average channel temperature, T0 is the ambient temperature,
DV-SOI and C-SOI structures at the same bias conditions (VGS and k is the mobility temperature exponent that for NMOS tran-
¼ 2 V and VDS ¼1 V), respectively. The other parameters of the sistors has a typical value in the range of 1.5–1.7 [25,26]. Therefore,
structures are listed in Table 1. It can be seen in the figures that, the proposed structure shows higher mobility in the channel
the temperature of the DV-SOI structure is considerably lower region due to temperature reduction and we expect that the drain
than the temperature of the C-SOI structure because of the better current increases. Fig. 7(a) and (b) shows the electron concentra-
heat flow path in the proposed structure. tion of the C-SOI, and DV-SOI structures along the surface of the
The channel temperature versus the drain voltage bias when devices. As it can be inferred from these figures, the electron
the gate voltage is held at 2 V is shown in Fig. 6. Generally, the concentration of the DV-SOI structure increases with respect to the
higher drain voltage bias leads to the higher lattice temperature, C-SOI structure. So, we have achieved 15% electron concentration
however, in the DV-SOI structure due to the improved self-heating increment in the maximum values of the proposed structure with
effect, the slope of the curve is much smoother rather than the respect to the C-SOI structure.
slope in the curve of the C-SOI structure. Dependence of the maximum temperature of the lattice and
One of the main consequences of the higher temperature lat- the gate-substrate capacitance of the device on the thickness of
the silicon nitride layer is investigated in Fig. 8. Decreasing the
tice is dominant phonon scattering mechanism, which decreases
buried layer thickness results in reduction of thermal resistance of
the carrier mobility considerably. It has been shown that this de-
the layer and hence the maximum temperature of the lattice di-
pendence can be stated as [24]:
minishes. On the other hand, as it can be observed from the figure,
⎛ T ⎞−K when the thickness of silicon nitride layer decreases, the gate-
μ eff = μ eff,0 ⎜ ⎟ substrate capacitance of the device will increase, since the capa-
⎝ T0 ⎠ (2)
citance of the device depends on the dielectric constant and
thickness of the Si3N4 layer.
Fig. 7. The profile of electron concentration along channel for (a) DV-SOI MOSFET and (b) C-SOI MOSFET structures at VGS ¼ 2 V, and VDS ¼10 V conditions.
shown in Fig. 9(a). It can be seen from Fig. 9(b) that a small po-
tential barrier is formed at the channel of the C-SOI structure, and
therefore, the OFF state leakage current is higher. But, in the
proposed DV-SOI structure, the conduction mechanism of the DV-
SOI should now be controlled by the potential barrier and the OFF
state leakage current decreases due to high barrier in the channel.
Furthermore, a slope on the potential profile aids the carrier
transport in the channel. Therefore, we are expecting that the ON
state current intensifies.
In the other word, by using the DV-SOI structure, the pene-
tration of the depletion regions of the reversed biased p–n junc-
tions of the drain and the source to the substrate is diminished. It
is shown that the leakage current of the reverse-biased p–n
junction is a function of junction area and doping concentration
[27].
Fig. 10 shows the DIBL and the threshold voltage of the DV-SOI
Fig. 8. Maximum temperature and gate-substrate capacitance versus thickness of and the C-SOI structures for the channel lengths down to 20 nm.
the silicon nitride layer for VGS ¼ 2 V, and VDS ¼10 V. DIBL and threshold voltage roll-off are because of the potential
Fig. 9. Conduction band energy of the (a) DV-SOI MOSFET and (b) C-SOI MOSFET structures at VGS ¼ 2 V and VD ¼10 V.
32 H. Shahnazarisani, S. Mohammadi / Physica E 69 (2015) 27–33
Fig. 12. Gate-source capacitance as a function of the frequency for DV-SOI MOSFET
and C-SOI MOSFET structures.
gm
Fig. 10. DIBL and threshold voltage of the DV-SOI and C-SOI structures versus fT =
channel length. 2π (CGS + CGD + Cpar ) (3)
Fig. 11. The ratio of Ion to Ioff (Ion/Ioff) versus channel length for the DV-SOI, and Fig. 13. Gate-drain capacitance as a function of the frequency for the DV-SOI
C-SOI structures. MOSFET and C-SOI MOSFET structures.
H. Shahnazarisani, S. Mohammadi / Physica E 69 (2015) 27–33 33
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