GaN-based Semiconductor Devices

for Future Power Switching Systems

Hidetoshi Ishida, Ryo Kajitani, Yusuke Kinoshita, Hidekazu Umeda, Shinji Ujita, Masahiro Ogawa,
Kenichiro Tanaka, Tatsuo Morita, Satoshi Tamura, Masahiro Ishida and Tetsuzo Ueda
Panasonic Corporation
3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan
email: ishida.hi@jp.panasonic.com

Abstract— GaN-based natural superjunction diodes and Gate
Injection Transistors (GITs) with p-type gate on AlGaN/GaN
hetero structure are promising power devices with lower on-
state resistance and higher breakdown voltage for power
switching applications. In this paper, the current status of the
devices for integrated circuits and their application to power
switching systems are reviewed, after explaining the basic
technologies for decreasing on-resistance, increasing
breakdown voltage, and suppressing current collapse. In
addition, a solution to increase switching frequency of GITs
for smaller system size is described. The effects of integrated
circuit of DC/DC converter consisted of gate driver, high-side
GIT and low-side GIT with short gate length are also
examined.
I. INTRODUCTION
GaN-based materials are very promising semiconductors
for power switching devices taking advantages of the superior
material properties such as higher breakdown field and higher
sheet carrier density of two dimensional electron gas (2DEG)
at hetero interface between AlGaN/GaN. Although higher
sheet carrier density of 2DEG is attractive to decrease channel
resistance of GaN-based transistors, normally-off operation of
the transistors is difficult. Thus much effort has been devoted
to achieve GaN-based transistors with normally-off operation
together with decreasing channel resistance and increasing
breakdown voltage. GaN-based Gate Injection Transistor
(GIT) with p-type gate on AlGaN/GaN hetero structure is a
solution to overcome them.
In this paper, the current status of the GITs with normally-
off operation for integrated circuits and their application to
power switching systems are reviewed after describing
material aspects of nitride semiconductors to achieve higher
sheet carrier density of 2DEG by polarization and higher
breakdown voltage. The demonstrated performances of the
GITs with the breakdown voltage of 600V are superior to
those of Si-based power devices such as IGBTs and
MOSFETs. A methodology for suppression of current
collapse which has been a crucial issue of GaN-based power
devices is also described. Moreover, GITs with shorter gate
length to reduce RonQg are also examined to extend the
application field of GITs. These GITs can be used to reduce
the system size with keeping high conversion efficiency of
electrical power conversion systems such as DC/DC
converters. A DC/DC converter IC with high speed gate driver
is also reviewed.
II. TECHNOLOGIES OF GAN-BASED DEVICES FOR
POWER SWITCHNG SYSTEMS
Thick GaN layer can be grown on Si substrate with buffer
layer in which the mismatch of lattice constant and thermal
expansion coefficient between GaN and Si are relaxed [1].
Fig.1 shows a photograph of epitaxial wafer of GaN on Si
substrate. The mismatch between GaN and Si is relaxed in the
buffer layer shown in Fig.2. The size of epitaxial wafer can be
increased up to 8 inch. The variation of Hall mobility and
sheet carrier density of 2DEG at AlGaN/GaN on 6 inch Si
substrate are quite small as shown in Fig.3 [2].
A unique feature of the nitride semiconductors is a large
amount of 2DEG induced at heterojunction such as
AlGaN/GaN without any intentional doping. Although InAlN-
based HFETs have been researched in which higher sheet
carrier density of 2DEG owing to larger spontaneous
polarization can be realized [3], more sheet carrier can be
induced by introducing piezoelectric polarization additionally
as shown in Fig.4. The comparison of induced charge density
of 2DEG is shown in Fig.5. The hetero structure of
InAlGaN/GaN is applied to access region of GIT to decrease
on-resistance. As a result, the fabricated device with
InAlGaN/GaN shows lower Ron than that of conventional
GIT [4].
Although the threshold voltage of GaAs-based HFETs
often depends on the gate direction due to the piezoelectric
charge induced under the gate of HFET, GaN-based HFET on
c-face do not depend on their gate direction, because the
elastic stiffness tensor [C] and piezoelectric tensor [e] are not
changed by coordinate transformation with respect to the c-
axis at any rotation as shown in Fig.6 [5], where [a] and [M]
are matrices for coordinate transformation. This feature is
advantageous to realize GaN-based ICs in which FETs with
various gate directions are integrated in a chip.
Breakdown mechanism of GaN-based devices has been
researched because it seems to be different from that of Si-
based devices in which the breakdown voltage is saturated in a
certain electrode distance. By contrast, breakdown voltage of
GaN-based devices looks like to be limitlessly increased by
longer electrode distance. This characteristic is partially

978-1-5090-3902-9/16/$31.00 ©2016 IEEE IEDM16-540

20.4.1
 explained by the model that a depleted single GaN layer acts
as superjunction because the polarization charge on front side
of GaN layer is canceled by the charge on back side as shown
in Fig.7 [6]. The diodes consisted of multi AlGaN/GaN
channel as shown in Fig.8 were fabricated to confirm the
model. RonA can be decreased by increasing channel number
with keeping breakdown voltage around 9 kV [7].
A schematic cross section of GIT and its band diagram are
shown in Fig.10 [8]. The p-type gate effectively depletes a
large amount of sheet charges of 2DEG at the interface of
AlGaN/GaN. Channel resistance can be reduced by applying
gate voltage due to hole injection from the gate electrode,
which is confirmed by transfer characteristics of GIT and
Electro Luminescence (EL) characteristics as shown in Fig.12
[8-9]. The fabricated GIT with the breakdown voltage of 600
V shows 10 times less on-state resistance and several times
less RonQg, which is attractive performance as compared to
those of Si-based power devices.
The current collapse of GaN based devices has been a
crucial issue. The GIT with additional drain electrode of p-
type material, namely Hybrid-Drain-embedded Gate Injection
Transistor (HD-GIT) achieved current collapse free
characteristic up to 800V. The measured Ron is drastically
improved by the device as shown in Fig.13. Based on device
simulations and electroluminescence study, the mechanism
that injected holes from the additional drain side p-type
material at OFF state compensate the hole emission in the
epitaxial layer is clearly understood as shown in Fig. 14 and
Fig.15 [10].
III. APPLICATION TO INTEGRATED CIRCUIT FOR POWER
SWITCHING SYSTEMS
Reducing RonQg of GIT for higher frequency switching is
important to extend the application field of the devices. The
gate length of GIT has been reduced down to 0.5 m [11]. The
access distances of Lgd and Lgs are also decreased. The
obtained RonQg is as low as 19 mnC. In addition, drain
current can be increased by shortening the gate length. The
breakdown voltage is around 30 V [11].
The fabricated GITs with short gate length have been
applied to DC/DC converter modules. However, parasitic
inductance between high-side GIT and low-side GIT, and
between gate driver and both-side GITs deteriorate conversion
efficiency of DC/DC converter. To reduce the parasitic
inductances, a DC/DC converter IC consisted of high-side
GIT, low-side GIT and gate driver in one chip is designed and
fabricated as shown in Fig.16. The gate driver circuit consisted
of buffer amplifier and DCFL in which normally-off GIT and
normally-on HFET are employed to reduce operation current
of the gate driver. The chip photograph of the fabricated IC is
shown in Fig.17. The fabricated IC achieves the peak
efficiency as high as 88.2% and 84.9% with 12V- 1.8V DC-
DC down conversion at 2MHz and 3MHz. The 3MHz
operation beyond the limit of Si can reduce the system size of
the DC-DC converter by about 60% as compared to the 1MHz
operation.
IEDM16-541
20.4.2
IV. CONCLUSIONS AND OUTLOOK
Normally-off GITs on Si substrates together with the basic
technologies to realize lower on-state resistance and higher
breakdown voltage are described. A physical mechanism to
suppress current collapse is also described. Shortening gate
length is effective to reduce RonQg down to 19 mnC which
serves switching operation at higher frequency for shrinking
system size. A DC/DC converter IC with GaN gate driver and
both side GITs is also examined. Higher switching frequency
requires lower parasitic inductance to achieve precise
waveform without overshoot. Therefore, integration of the
devices is inevitable to control the waveform precisely as
shown in Fig.18. These GaN-based devices are very promising
for future power switching systems.
ACKNOWLEDGMENT
The authors would like to gratefully acknowledge
Managing Director Eiji Fujii, Director Minoru Kume and
General Manager Tsuguyasu Hatsuda, Panasonic, for their
sincere encouragement. They express sincere gratitude to Prof.
Daisuke Ueda in Kyoto Institute of Technology for his
valuable discussions. This work was partially supported by the
New Energy and Industrial Technology Development
Organization (NEDO), Japan, under the Strategic
Development of Energy Saving Innovative Technology
Development Project.
REFERENCES
[1] D.Ueda, et al., “AlGaN/GaN Devices for Future Power Switching
Systems,” Tech. Dig. IEDM 2005, 377 (2005).
[2] M.Ishida, et al.,”GaN on Si Technologies for Power Switching Devices,”
IEEE Trans. Electron Device, vol.53, 1524 (2013).
[3] J.Kuzmic, et al., “Power electronics on InAlN/(In) GaN: Prospect for a
record performance,” IEEE Electron Device Letters, vol.22, 510 (2001).
[4] R.Kajitani, et al., “Novel high-current density GaN-based normally off
transistor with tensile-strained quaternary InAlGaN barrier,” Jpn. J. Appl.
Phys., vol.54, 04DF09 (2015).
[5] H.Ishida, et al., “Experimental and Theoretical Examination of
Orientation Effect on Piezoelectric Charge at Gate Periphery in
AlGaN/GaN HFETs,” IEEE Trans. Electron Device, vol.53, 1524 (2006).
[6] H.Ishida, et al., “Unlimited High Breakdown Voltage by Natural Super
Junction of Polarized Semiconductor,” IEEE Electron Device Letters,
vol.29, 1087 (2008).
[7] H.Ishida, et al., “GaN-based Natural Super Junction Diodes with Multi-
channel Structures,” Tech. Dig. IEDM 2008, 145 (2008).
[8] Y.Uemoto, et al., “Gate Injection Transistor (GIT)—A Normally-Off
AlGaN/GaN Power Transistor Using Conductivity Modulation,” IEEE
Trans. Electron Device, vol.54, 3393 (2007).
[9] M.Meneghini, et al., “Electron and hole-related luminescence processes
in gate injection transistors,” Appl. Phys. Lett. Vol.97, 033506 (2010).
[10] K.Tanaka, et al., “Suppression of current collapse by hole injection from
drain in a normally-off GaN-based hybrid-drain-embedded gate injection
transistor,” Appl. Phys. Lett. Vol.107, 163502 (2015).
[11] H.Umeda, et al., “Highly Efficient Low-Voltage DC-DC Converter at 2-
5 MHz with High Operating Current Using GaN Gate Injection
Transistors,” PCIM Europe 2014, p.45 (2014).
[12] S.Ujita, et al., A Compact GaN-based DC-DC Converter IC with High-
Speed Gate Drivers Enabling High Efficiencies,” ISPSD 2014, B1L-A-1
(2014).
 2500 1.5

Sheet Carrier Concentration Ns (x 1013 cm-2)

GaN Strain Control 2000

Electron Mobility e (cm2 / Vs)

AlN
GaN 1.0
1500
Super-lattice
Buffer
1000
AlGaN 0.5
AlN
500
Si(111)Substrate
0 0.0
0 20 40 60 80
Radius Distance From Center (mm)

Fig. 1. Photograph of epitaxally grown Fig. 2. Schematic structure of super- Fig. 3 Variation of Hall mobility and sheet
AlGaN/GaN hetero structure by MOCVD on Si. lattice buffer layer for strain control of carrier concentration of 2DEG at AlGaN/GaN
Wafer size can be increased up to 8 inch. GaN layer on Si substrate. on 6inch Si substrate.

InAlGaN Transformation
[C], [e]
[0001]

(tensile)
[C’], [e’]
2DEG
GaN z (c-axis)
Thickness is 15nm y’
2DEG Charge density (C/m2)

0.6  Ppz
Piezoelectric Polarization : Ppz

Psp
Spontaneous Polarization : Psp
y

0.4 

x x’
0.2 
[C’] = [M][C][M]T = [C]
[e’] = [a][e][M]T = [e]
0  [C] elastic stiffness tensor
Tensile Lattice Tensile
strained -matched strained [e] piezoelectric tensor
Al0.20Ga0.80N In0.18Al0.82N In0.10Al0.85Ga0.05N [a], [M] : matrices for coordinate transformation

Fig. 4 Expected sheet carrier density of 2DEG of Fig. 5 Hetero structure of InAlGaN/GaN and Fig. 6 Elastic stiffness tensor and piezoelectric
tensile strained InAlGaN/GaN hetero structure. comparison of induced charge density of 2DEG tensor are not changed by coordinate
for AlGaN/GaN, InAlN/GaN and InAlGaN/GaN. transformation to the c-axis at any angle of .
Electric field

Lac=125 m
constant 250 10

200 8 Breakdown voltage (kV)
RonA (mcm2)

150 6
Positive
Polarization charge
+ ++++
100 4

GaN layer 50 2

- - - - - 0 0
Negative 0 1 2 3 4
Polarization charge Channel number

Fig. 7. A model of a single layer of GaN in which Fig. 8. A Natural Superjunction (NSJ) Diode Fig. 9. Channel number dependence of RonA and
the polarization charges on front and back side are consisted of three AlGaN/GaN channels breakdown voltage for the NSJ diodes. RonA can
canceled. The layer acts as superjunction. fabricated for confirming the model. be decreased by increasing channel number with
keeping breakdown voltage.

IEDM16-542
20.4.3
 Gate i‐AlGaN
4
Ohmic p‐AlGaN i‐GaN
3
2
Energy [eV]

1
EC 300 120
0 EF
-1 250 100
EV Ids (GIT)
-2

Ids (mA/mm)

gm (mS/mm)
-3 200 gm (GIT) 80
-4
Ids
-0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 150 (MESFET) 60
D e p th [u m ]
gm
Gate 100 (MESFET) 40
Source Drain
p-AlGaN 50 20
2nd peak
i-AlGaN
0 0
- - - - - - - - - - -
-3 -2 -1 0 1 2 3 4 5 6
i-GaN Vgs (V)

Fig. 10. A schematic cross section and its band Fig. 11. Comparison of transfer characteristics Fig. 12.Distribution of luminescence signal emitted
diagram of GIT. AlGaN/GaN interface under of GIT and conventional MESFET. The 2nd peak by GIT under different bias conditions. Emission
gate is depleted owing to p-AlGaN. of gm is observed around 5 V for GIT. between gate and source becomes dominant over 5 V.
gate
gate drain
drain
Conduction Band Energy (eV)

0 t=0.2s
0.2s
150 (b)
-200
t=0.1s
0.1s
Rd
Vdd -400
DUT
Gate
Source
Drain
VG GIT
GIT, Y=0.05m
Ron (m)

p-AlGaN
i-AlGaN
-600
t=0s
t=0s
100 i-GaN
0 5 10 15
Gate P-Drain
Position X (m)
GIT Source
p-AlGaN
Drain
gate pdrain drain
p-drain
gate drain
i-AlGaN
Conduction Band Energy (eV)

i-GaN
t=0.2s
0.2s
0
t=0.1s
0.1s
(a)
50 HD-GIT -200

-400
400 500 600 700 800
t=0s
HD-GIT t=0s
Vdd (V) -600 HD-GIT, Y=0.05m

0 5 10 15

Position X (m)
Fig. 13. Comparison of current collapse between Fig. 14. Simulated temporal behavior of Fig. 15. Schematic potential profile and trap
HD-GIT and conventional GIT. The structure conduction band energy of HD-GIT. Potential in charge variation of conventional GIT and HD-
significantly suppress current collapse. off-state can be rapidly recovered for HD-GIT. GIT in gate-(p)drain region at OFF and ON states.

Fig. 16. Circuit diagram and schematic cross Fig. 17. Chip photograph of the fabricated GaN- Fig. 18. Higher switching frequency requires
section of fabricated GaN-based IC. High and based power IC and SEM cross section of GIT lower parasitic inductance to achieve precise
low side GITs and gate driver are integrated. with 0.5m gate which is used in the IC. operation. Integrated circuit is more suitable.

IEDM16-543
20.4.4