. What is a nucleonic sensing method
Between 4 to 10 KΩ
employing usually one or more
radioisotope sources and radiation
detectors?
 A. Radiation sensing
 B. Sonic level sensing
 C. Conductivity level sensing
 D. Dielectric variation sensing
2. What is concerned with the
measurement of electric signals on the
scalp with arise from the underlying
neural activity in the brain (including
synaptic sources)?
 A. ECG
 B. EEG
 C. Ultrasound
 D. EKG
3. In therapeutic radiology and in nuclear
medicine, the energies of interest range
from about
 A. 10 to 100 KeV
 B. 100 to 10000 KeV
 C. 10000 to 10000 KeV
 D. 1 to 10 KeV
4. Which of the following is a four-layer
diode with an anode gate and a cathode
gate?
 A. SCS
 B. SCR
 C. SBS
 D. SUS
5. What is basically a two-terminal
parallel-inverse combination of
semiconductor layers that permits
triggering in either direction?
 A. Diac
 B. Triac
 C. Quadrac
 D. Shockley Diode
6. What is the typical value of the
interbase resistance of UJTs?
 A. 20 KΩ
 B. Between 4 to 4 KΩ
 C. 4 KΩ
 D.
7. PUT stands for
 A. Programmable Unijunction Transistor
 B. Programmable Universal Transistor
 C. Pulse Unijunction Transistor
 D. Pulse Universal Transistor
8. Which transistor conducts current in
both directions when turned on?
 A. Diac
 B. SCR
 C. Quadrac
 D. SCS
9. What is a three terminal device used
to control large current to a load?
 A. SCR
 B. SCS
 C. GTO
 D. Thyristor
10. What is the other term for
thermoelectric effect?
 A. Seebeck effect
 B. Hall effect
 C. Photoelectric effect
 D. Thermal effect
11. What are the regions corresponding
to open-circuit condition for the
controlled rectifier which block the flow
of charge from anode to cathode?
 A. Forward blocking regions
 B. Reverse blocking regions
 C. Breakdown regions
 D. Both A and B above
12. The V-I characteristics for a triac in
the first and third quadrants are
essentially identical to those of _____ in
the quotation.
 A. SCR
 B. UJT
 C. Transistor
 D. SCS
13. When the temperature increases, the
inter-base resistance of a UJT
 A. Remains unchanged
 B. Increases  B. Two
 C. Decreases  C. Three
 D. is zero  D. Five
14. The three terminals of a triac are 21. A triac is a _____ switch.

 A. drain, source, gate  A. unidirectional

 B. two main terminals and a gate terminal
 C. cathode, anode and gate
 D. anode, source, gate
15. A triac is equivalent to two SCRs
 A. in parallel
 B. in inverse-parallel
 C. in series
 D. in inverse-series
16. In diagnostic radiology and for
superficial therapy purposes, the energy
spectrum of radiation varies from about
 B. mechanical
 C. bidirectional
 D. omnidirectional
22. Which of the following is the normal
way to turn on an SCR?
 A. By breakover voltage
 B. By appropriate anode current
 C. By appropriate cathode current
 D. By appropriate gate current
23. A triac can pass a portion of _____
half cycle through the load

 A. 1 to 10 KeV  A. only positive

 B. 10 to 100 KeV  B. only negative
 C. 100 to 10000 KeV  C. both positive and negative
 D. 10000 to 100000 KeV  D. neither positive nor negative
17. The x-ray region of the 24. A diac has how many terminals?
electromagnetic spectrum has a
corresponding range of wavelengths from  A. Two
 B. Three
 A. 0.1 to 0.0001 nm  C. Four
 B. 0.1 to 0.0001 pm  D. Five
 C. 0.1 to 0.0001 μm 25. An SCR combines the feature of
 D. 0.1 to 0.0001 mm
18. The three terminals of an SCR are  A. a rectifier and resistance
the  B. a rectifier and capacitor
 C. a rectifier and transistor
 A. anode, cathode, and grid  D. a rectifier and inductor
 B. cathode, anode, gate 26. Which is the control element in an
 C. anode, cathode, drain SCR?
 D. drain, source, gate
19. If a body is considered as a  A. Anode
conducting sphere of 0.5m radius its  B. Cathode
capacitance to infinity is  C. Gate
 D. Cathode supply
 A. 55 pF 27. How many semiconductor layers
 B. 55 nF does a triac have?
 C. 55 μF
 D. 55 F  A. Two
20. How many semiconductor layers  B. Four
does an SCR have?  C. Three
 D. One
 A. Four
28. A diac has how many semiconductor  A. Miller effect
layers?  B. Rate effect
 C. End effect
 A. Three  D. Flywheel effect
 B. Four 36. Which of the following is a common
 C. Two application of UJT?
 D. Five
29. The p-type emitter of a UJT is _____  A. Amplifier
doped.  B. Rectifier
 C. Mulitivibrator
 A. lightly  D. Sawtooth generator
 B. moderately 37. Which device does not have a gate
 C. heavily terminal?
 D. not
30. A diac has  A. Triac
 B. SCR
 A. one pn junction  C. FET
 B. three pn junctions  D. Diac
 C. two pn junctions 38. An SCR is a _____ triggered device.
 D. four pn junctions
31. A UJT is sometimes called a ____  A. current
diode.  B. power
 C. voltage
 A. double-based  D. noise
 B. single-based 39. When UJTs is turned on, the
 C. a rectifier resistance between emitter terminal and
 D. a switching diode lower base terminal
32. A diac is _____ switch.
 A. remains unchanged
 A. an AC  B. increases
 B. a mechanical  C. decreases
 C. a dc  D. becomes zero
 D. both ac and dc 40. The UJT has
33. An SCR is made of silicon and not
germanium because silicon.  A. two pn junctions
 B. three pn junctions
 A. is inexpensive  C. one pn junction
 B. has low leakage current  D. four on junction
 C. is mechanically strong 41. The UJT may be used as
 D. is tetravalent
34. What is the control element in an  A. an amplifier
SCR?  B. a rectifier
 C. a sawtooth generator
 A. Gate  D. a multivibrator
 B. Anode 42. Which of the following is the normal
 C. Grid way to turn on a diac?
 D. Cathode
35. An effect that reduces the possibility  A. By breakover voltage
of accidental triggering of the SCS.  B. By gate voltage
 C. By gate current
 D. By anode current  A. more than
43. Power electronics deals with the  B. less than
control of ac power at what frequencies  C. equal to
essentially?  D. twice
50. When the temperature increases, the
 A. 20 KHz intrinsic stand off ratio
 B. 1000 KHz
 C. Frequencies less than 10 Hz  A. increases
 D. 60 Hz frequency  B. decreases
44. When the emitter terminal of a UJT is  C. essentially constant
open, the resistance between the base-  D. becomes zero
terminals is generally 51. What is dimensionless parameter of
the second-order characteristic equation?
 A. low
 B. extremely low  A. Damping ratio
 C. high  B. Accuracy
 D. extremely high  C. Efficiency ratio
45. AC power in a load can be controlled  D. Transfer function ratio
by connecting 52. What is the ratio of two exponential
functions of time called?
 A. two SCRs in series
 B. two SCRs in parallel  A. Transfer function
 C. two SCRs in parallel opposition  B. Damping ratio
 D. two SCRs in series opposition  C. Efficiency
46. Which equation defines the intrinsic  D. Gain
stand off ratio (η) of UJTs? 53. A diac is turned on by

 A. RB1 / (RB1 + RB2)  A. breakover voltage

 B. (RB1 + RB2) / RB1  B. gate current
 C. (RB1 + RB2) / RB2  C. gate voltage
 D. RB1 + RB2  D. anode current
47. To turn off the SCR, which of the 54. An SCR whose state is controlled by
following is done? the light falling upon a silicon
semiconductor layer of the device.
 A. Reduce gate voltage to zero
 B. Reverse bias the gate  A. SCS
 C. Reduce anode voltage to zero  B. GTO
 D. Reduce cathode voltage to zero  C. Thyristor
48. Control system that maintains a  D. LASCR
speed voltage, or other variable within 55. A diac is simply
specified limits of a preset level.
 A. a single junction
 A. Controller  B. a three junction device
 B. Regulator  C. a triac without a gate terminal
 C. Sensor  D. the SCR
 D. Computer 56. What region lies between the peak
49. To turn on the UJT, the forward bias point and valley point of UJT emitter
on emitter diode should be _____ the characteristic?
peak point voltage.
 A. Saturation
 B. Cut off
 C. Negative resistance
 D. Positive resistance
57. What refers to the application of
electronic theory, technology,
instrumentation, and computing system
to biological research and medical
problems?
 A. Medical electronics
 B. Genetics electronics
 C. Biomedical engineering
 D. Biomedical electronics
58. Which device exhibits negative
resistance region?
 A. Diac
 B. Triac
 C. Transistor
 D. UJT
59. The UJT operates in what region after
peak point?
 A. Cut off
 B. Negative resistance
 C. Saturation
 D. Positive resistance
60. SCR is a rectifier constructed of
silicon material. Silicon is chosen
because
 A. it is the most abundant material
 B. of its strength and ruggedness
 C. it is much cheaper than any other material
 D. of its high temperature and power
capabilities
61. A transduction principle used
primarily in optical sensors.
 A. Photoconductive transduction
 B. Photovoltaic transduction
 C. Electromagnetic transduction
 D. Piezoelectric transduction
62. What is a solid state equivalent of a
gas filled triode?
 A. Triac
 B. Thyristor
 C. SCR
 D. SCS
63. The supply voltage is generally
_____ that of breakover voltage in an
SCR.
 A. equal to
 B. less than
 C. greater than
 D. twice
64. The triac is fundamentally a/an
_____ with a gate terminal for
controlling the turn-on conditions of the
bilateral device in either direction.
 A. SCR
 B. Quadric
 C. Shockley diode
 D. Diac
65. When the supply voltage exceeds the
breakover voltage of an SCR, it
 A. starts conducting
 B. stops conducting
 C. conducts leakage current
 D. conducts terminal current
66. The step response of a first order
systems is given by
 A. y(t) = A0
 B. y(t) = A0 + A1es1t + A2es2t +A3es3t
 C. y(t) = A0 + A1es1t + A2es2t
 D. y(t) = A0 + A1es1t
67. A feedback control system in which
the controlled variable is mechanical
position.
 A. Closed-loop feedback control system
 B. Open-loop feedback control system
 C. Servomechanism
 D. Mechanical servomechanism
68. What is that voltage above when the
SCR enters the conduction region?
 A. Reverse breakover voltage
 B. Forward breakover voltage
 C. Holding voltage
 D. Trigger voltage
69. A locus or path of the roots traced
out on the s-plane as a parameter is
changed.
 A. Root locus  C. Seismic mass
 B. Hyperbola  D. Crystal
 C. Parabola 76. What are some areas where GTO is
 D. Circle applicable?
70. A control system in which the output
is related to the input by device  A. Counters
parameters only.  B. Pulse generators
 C. Multivibrators
 A. Open-loop control system  D. All of the above
 B. Closed-loop control system 77. What Greek word which means
 C. Servomechanism “switch”?
 D. Feedback control system
71. What is that value of current below  A. Ristor
which the SCR switches from the  B. Trans
conduction state to the forward blocking  C. Thy
region under stated conditions?  D. Thyristor
78. What is the typical turn-on time of an
 A. Holding current SCR?
 B. Forward current
 C. Reverse current  A. 1 μs
 D. Trigger current  B. 5 μs
72. Which is equivalent to a zener or  C. 10 μs
avalanche region of the fundamental  D. 3 μs
two-layer semiconductor diode? 79. An SCR is a solid state equivalent of
which tube?
 A. Reverse breakdown voltage
 B. Forward breakdown voltage  A. Triode
 C. Breakdown voltage  B. Gas-filled triode
 D. Breakover voltage  C. Pentode
73. What is the required gate triggering  D. Tetrode
current of GTO? 80. The gate of an SCR is _____ with
respect to its cathode.
 A. 20 mA
 B. 10 mA  A. positive
 C. 30 mA  B. at zero potential
 D. 40 mA  C. negative
74. What is an automatic speed control  D. at infinite potential
device using the centrifugal force on 81. A normally operated SCR has an
rotating flyweights as the feedback anode which is _____ with respect to
element? cathode.

 A. Regulator
 B. Flywheel governor
 C. Field control
 D. Throttle valve
75. What is the sensing element of
acceleration transducer?
 A. negative
 B. positive
 C. at zero potential
 D. at infinite potential
82. What device measures humidity
directly with a single sensing element?

 A. Damper  A. Hygrometer
 B. Spring  B. Tachometer
 C. Venturi meter  C. infinite
 D. Hydrometer  D. 1 V
83. What is one of the most widely used 90. The typical turn-off time of an SCR is
sensing elements particularly for about
pressure ranges higher than 2 MPa?
 A. 20 to 40 μs
 A. Bellows  B. 5 to 40 μs
 B. Bourdon tube  C. 1 to 5 μs
 C. Capsule  D. 15 to 25 μs
 D. Straight tube 91. An SCR is made of what material?
84. Which of the following can change
the angle of conduction in SCR?  A. Silicon
 B. Carbon
 A. Changing anode voltage  C. Germanium
 B. Changing gate voltage  D. Gallium-arsenide
 C. Reverse biasing the gate 92. ECG stands for electrocardiography
 D. Changing cathode voltage while EEG stands for?
85. An SCR is a member of what family?
 A. electroextracellugraphy
 A. Thyrector  B. electroemyography
 B. Thyratron  C. electroencephalography
 C. Thyristor  D. electrovectorcardiography
 D. Transistor 93. Acceleration transducers are also
86. How many pn junction does SCRs called
have?
 A. gyros
 A. Two  B. force transducers
 B. Four  C. tachometers
 C. Three  D. accelerometers
 D. Five 94. When an SCR is combined to a
87. Which of the following is NOT a switch, it is considered as a _____
method primarily used for density switch.
sensing?
 A. bidirectional
 A. Sonic  B. mechanical
 B. Radiations  C. unidirectional
 C. Vibrating element  D. omnidirectional
 D. Differential 95. When the firing angle of SCR is
88. When SCR starts conducting, then increased, its output
_____ losses all control.
 A. decreases
 A. gate  B. increases
 B. anode  C. remains unchanged
 C. cathode  D. doubles
 D. anode supply 96. When the SCR is OFF, the current in
89. An SCR when turned on has a typical the circuit is
voltage across of
 A. exactly zero
 A. zero  B. large leakage current
 B. 0.1 V  C. small leakage current
 D. thermal current  b. Shockley diode
97. The SCR can exercise control over  c. Zener diode
_____ of ac supply.  d. FET
104. The thyristor counterpart of the
 A. positive or negative half-cycle unijunction transistor.
 B. both positive and negative half-cycles
 C. only positive half-cycle  a. UJT
 D. only negative half-cycle  b. PUT
98. What is the most widely used altitude  c. SBS
and altitude-rate transducers?  d. SCS
105. Minimum current required to keep a
 A. Flowmeter thyristor “on”.
 B. Psychometer
 C. Gyro  a. Holding current
 D. Gygrometer  b. Trigger current
99. What sensing element is typically  c. Supply current
made from a thin-walled tube formed  d. Collector current
into deep convolutions and sealed at one 106. A unidirectional-three terminal
end, whose displacement can then be device, the most popular of thyristors.
made to act on a transduction element?
 a. SCS
 A. Diaphragm  b. Triac
 B. Bellow  c. UJT
 C. Capsule  d. SCR
 D. Bourdon tube 107. The angle of an AC supply voltage
100. The voltage across an SCR when it during which an SCR is “off”.
is turned on is about
 a. Conduction angle
 A.0.5 V  b. Firing delay angle
 B. 0.1 V  c. Right angle
 C. 1 V  d. Off angle
 D. 5 V 108. Thyristors are most often used as

 a. Switches
101. Referred to a bidirectional trigger  b. Amplifiers
diode.  c. Buffers
 d. Decoders
 a. Triac 109. The total internal series resistance
 b. UJT of the UJT.
 c. BJT
 d. Diac  a. Bulk’s resistance
102. Voltage required to turn on any  b. Total resistance
thyristor.  c. Interbase resistance
 d. RIS
 a. Trigger voltage 110. The most popular and typical
 b. Breakover voltage breakover voltage of a diac.
 c. Barrier voltage
 d. Supply voltage  a. 32 V
103. Also known as a four-layer diode.  b. 16 V
 c. 8 V
 a. Diac
 d. 4 V 118. What device has two terminals
111. The peak voltage of a PUT is connected in inverse-parallel that pass in
two directions?
 a. VD + VBB
 b. VG + VBB  a. Triac
 c. VD + VG  b. Diac
 d. VBB  c. Shockley
112. A UJT has η = 0.65 and is  d. SCR
connected to a 20 V supply. What is its 119. What is the breakover voltage of a
VEB1? PUT if it is connected to a 15 V supply
across the gate terminal?
 a. 12 V
 b. 13.6 V  a. 10.7 V
 c. 12.7 V  b. 23.7 V
 d. 14 V  c. 15.7 V
113. The three terminal semiconductor  d. 5.3 V
device that acts in either direction. 120. The gap between the forward
blocking region and the forward
 a. Triac conduction region.
 b. SCR
 c. Diac  a. Band gap
 d. SCS  b. Switching region
114. The P of PUT stands for  c. Jump gap
 d. Negative resistance region
 a. Programmable 121. The cathode of the PUT is the
 b. Performance counterpart of which terminal in UJT?
 c. Peak
 d. Post  a. Anode
115. The terminals of a UJT are  b. Base2
 c. Emitter
 a. Gate, Anode, Cathode  d. Base1
 b. Anode, Cathode 122. An electronic switch that has the
 c. Emitter, Base highest single device current capacity
 d. Emitter, Base1, Base2 and can withstand overloads better.
116. The lowest current that can prevent
the transition of a UJT from conduction  a. Thyratrons
to blocking region.  b. Ignitrons
 c. SCR
 a. Switching current  d. Triac
 b. Emitter current 123. Group of devices with 4 or more
 c. Valley current semiconductor layers.
 d. Peak current
117. The SCS has how many gate  a. Transistors
terminals?  b. Diodes
 c. Thyristors
 a. 0  d. Op-Amps
 b. 1 124. Identify which of the following is a
 c. 2 three layer device.
 d. 3
 a. SCS
 b. Diac  b. Thyratron
 c. Triac  c. Thyristor
 d. PUT  d. Relay
125. What device can be modeled by a 132. A two-terminal, unidirectional
diode and two resistors? thyristor.

 a. BJT  a. DIAC
 b. DIAC  b. Shockley
 c. SCR  c. TRIAC
 d. UJT  d. Diode
126. A junction that is formed by adding 133. A thyristor is basically ______.
controlled amounts of an impurity to the
melt during crystal growth is termed as  a. PNPN device
 b. A combination of diac and triac
 a. Fused junction  c. A set of SCRs
 b. Unijunction  d. A set of SCR, diac and triac
 c. Alloy junction 134. What is the PNPN device with two
 d. Doped junction gates?
127. A triac is a ______.
 a. Diac
 a. 2 terminal switch  b. Triac
 b. 2 terminal bilateral switch  c. SUS
 c. 3 terminal unilateral switch  d. SCS
 d. 3 terminal bidirectional switch 135. Which device incorporates a
128. A thyristor equivalent of a thyratron terminal for synchronizing purposes?
tube is _____.
 a. Diac
 a. Diac  b. Triac
 b. Triac  c. SUS
 c. SCR  d. SCR
 d. PUT 136. An SCR is a _______.
129. Which of the following describes a
triac?  a. Unijunction device
 b. Device with three junctions
 a. Conducts when not triggered  c. Device with four junctions
 b. Conducts when not triggered in both  d. Device with two junctions
directions 137. A thyristor can be turned off
 c. Conducts when triggered in one direction
 d. Conducts when triggered in both direction  a. By reducing the anode current below the
130. Minimum anode current to hold a holding current value
thyristor at conduction.  b. By reversing the anode voltage
 c. Either a or b
 a. Trigger  d. Both a and b
 b. Maintaining current 138. Minimum duration of pulse
 c. Holding current triggering system for thyristors is
 d. Threshold voltage ________.
131. General term for semiconductor
devices primarily used as switches.  a. At least 10 microseconds
 b. At least 30 milliseconds
 a. Shockley  c. At least 10 milliseconds
 d. At least 1 second  a. Crowbar
139. A device that cannot be triggered  b. Snubber
by voltage of either polarity is ________.  c. Varistor
 d. Eliminator
 a. Diac 146. Which are the three terminals of a
 b. Triac TRIAC?
 c. SCS
 d. All of the above  a. Gate, anode1 and anode2
140. Technically, what is dicing means?  b. Gate, source and sink
 c. Base, emitter and collector
 a. Process of joining two diacs  d. Emitter, base1 and base2
 b. Circuit of reducing noise 147. The term used to describe the
 c. Device for reducing magnetic and radio process whereby two transistors with
interference positive feedback are used to simulate
 d. Process of breaking the silicon slice into the action of the thyristor.
chips
141. The term used to describe the  a. Arcing
process whereby two transistors with  b. Latching
positive feedback are used to simulate  c. Damping
the action of the thyristor.  d. Switching
148. The minimum emitter to base
 a. Arcing voltage to trigger the UJT is the
 b. Latching ________.
 c. Damping
 d. Switching  a. Forward breakover voltage
142. It is the minimum anode current to  b. Trigger
hold a thyristor at conduction.  c. Breakdown voltage
 d. Peak voltage
 a. Trigger 149. The ratio of the emitter to base1
 b. Maintaining current resistance to the interbase resistance of
 c. Holding current a UJT is called ________.
 d. Threshold voltage
143. Electron tube containing mercury  a. Aspect ratio
functioning as a rectifier.  b. Current gain
 c. Voltage gain
 a. Thyratron  d. Intrinsic standoff ratio
 b. Ignitron 150. For a UJT, it is the region between
 c. Thyrector the peak and valley points as seen in its
 d. SCR characteristics curve.
144. How do you stop the conduction
during which the SCR is also conducting?  a. Active region
 b. Negative resistance region
 a. Remove voltage gate  c. Trigger region
 b. Increase cathode voltage  d. Saturation region
 c. Interrupt anode current
 d. Reduce gate current
145. A series RC connected in parallel
with an SCR to eliminate false triggering
is the _______.
151. This device is two zener diodes device (as measured between its cathode
connected back to back in series and is and anode)?
used to support voltage surges and
transients.  a. The junction diode
 b. The varactor diode
 a. Thyristor  c. The tunnel diode
 b. Varactor  d. The hotcarrier diode
 c. Thyrector 158. Which of the following does not
 d. Phanatron have a base terminal?
152. Refers to the number of degrees of
an AC cycle during which the SCR is  a. UJT
turned on.  b. PNP
 c. SCR
 a. Conduction angle  d. NPN
 b. Firing delay angle 159. A series RC circuit that is connected
 c. Induction angle in parallel with an SCR to eliminate false
 d. ON angle triggering.
153. A four-element solid state device
that combines the characteristics of a  a. Crowbar
both diodes and transistors.  b. Snubber
 c. Varistor
 a. Varactor  d. Eliminator
 b. Zener diode 160. A circuit that protects a sensitive
 c. Tunnel diode circuit from a sudden increase in supply
 d. SCR voltage.
154. Electron tube equivalent to solid
state SCR.  a. Crowbar
 b. Snubber
 a. Triode  c. Varistor
 b. VTVM  d. Eliminator
 c. CRT 161. A two-terminal, bidirectional
 d. Thyratron thyristor.
155. Find the two stable operating
conditions of an SCR.  a. DIAC
 b. Shockley
 a. Conducting and non-conducting  c. TRIAC
 b. Oscillating and quiescent  d. Diode
 c. NPN conduction and PNP conduction 162. A DIAC is equivalent to inverse
 d. Forward conducting and reverse conducting parallel combination of
156. How do you stop conduction during
which SCR is also conducting?  a. Shockley diodes
 b. Schottky
 a. Remove voltage gate  c. BJT
 b. Increase cathode voltage  d. SCR’s
 c. Interrupt anode current 163. A TRIAC is equivalent to inverse
 d. Reduce gate current parallel combination of
157. When an SCR is triggered or on
conducting, its electrical characteristics  a. Shockley
are similar to what other solid-state  b. Schottky
 c. BJT
 d. SCR’s  d. Base
164. Which are the three terminals of a 171. The region where breakover voltage
TRIAC? of the SBS drops to 1 V instantaneously.

 a. Gate, anode1 and anode2  a. Falldown region

 b. Gate, source and sink
 c. Base, emitter and collector
 d. Emitter, base1 and base2
165. Which device can be modeled by a
diode and two resistors?
 a. BJT
 b. DIAC
 c. SCR
 d. UJT
166. The minimum emitter to base 1
voltage to trigger the UJT.
 b. Fallback region
 c. Breakback region
 d. Breakdown region
172. The ratio of RB1 and RBB is called
 a. Intrinsic standoff ratio
 b. Reuber’s ratio
 c. Common mode rejection ratio
 d. Cat’s ratio
173. The time between the first
application of electrode force and the
first application of welding current.

 a. Forward breakover voltage  a. Squeeze time

 b. Trigger  b. Weld time
 c. Breakdown voltage  c. Hold time
 d. Peak voltage  d. Off period
167. The ratio of the emitter to base1 174. Process wherein coalescence is
resistance to the interbase resistance of produced by the heat obtained from the
a UJT. resistance of the workpiece to the flow of
low voltage, high density electric current
 a. Aspect ratio in a circuit.
 b. Current gain
 c. Voltage gain  a. Forge welding
 d. Intrinsic standoff ratio  b. Resistance welding
168. For UJT, it is the region between the  c. Ultrasonic welding
peak and valley points.  d. LBW
175. Time when electrode force is
 a. Active region applied but the current is shut off.
 b. Negative resistance region
 c. Trigger region  a. Off period
 d. Saturation region  b. Hold time
169. Typical breakover voltage of an  c. Squeeze time
SBS.  d. Weld time
176. The time when electrode force is
 a. 2 V released.
 b. 4 V
 c. 8 V  a. Hold time
 d. 16 V  b. Squeeze time
170. The trigger current is applied to  c. Off period
the…  d. Weld time
177. The fusion of the grain structure of
 a. Anode materials.
 b. Gate
 c. Cathode  a. Forge
 b. Weld  a. Electrode
 c. Recombination  b. Current regulator
 d. Coalescence  c. Control system
178. Time when current is applied to the  d. Mechanical system
workpiece. 185. Welding machine use for large
workpieces.
 a. Weld time
 b. Squeeze time  a. Miniature welders
 c. Hold time  b. Rocker-arm welder
 d. Off period  c. Press-type welder
179. Heat in resistance welding is  d. Portable spot welder
produced by the following factors except 186. Another name for hammer welding
one
 a. Fusion welding
 a. Time duration  b. RW
 b. Current  c. Maul welding
 c. Electrical resistance  d. Forge welding
 d. Pressure applied 187. Referred to as a localized
180. Resistance welding machine coalescence
component that holds the workpieces.
 a. Weld
 a. Electrical circuit  b. Mold
 b. Electrode system  c. Cast
 c. Mechanical system  d. Metal
 d. None of the above 188. Part of the welding electric circuit
181. Resistance spot welding (RSW) that is used to produce high amperage
machine type that is controlled by current at low voltages.
hydraulic cylinders.
 a. Capacitor
 a. Miniature welders  b. Voltage regulator
 b. Rocker-arm welder  c. Transformer
 c. Press-type welder  d. The secondary circuit
 d. Portable spot welder 189. The overlapped RSW.
182. Machine component made up of the
transformer and the current regulator.  a. RSEW (Resistance Seam Welding)
 b. ORSW
 a. Control system  c. OSW
 b. Electrical system  d. USW
 c. Electrode system 190. Spot welding are most commonly
 d. Mechanical system used in
183. Welder machine with capacities up
to 500 kVa  a. Ships
 b. Automobiles
 a. Miniature welders  c. Airplanes
 b. Rocker-arm welder  d. Rafts
 c. Press-type welder 191. The last step in welding time
 d. Portable spot welder control.
184. Regulates the time of the welding
cycle.  a. Off period
 b. Weld time
 c. Squeeze time  b. Spot welding
 d. Hold time  c. Induction welding
192. The relative maximum workpiece  d. Arc welding
thickness where spot welding can be 199. For inspection of welding defects in
used. thick metals, which of the following ray is
used to photograph thick metals objects?
 a. 0.5 in
 b. 1 in.  a. Gamma rays
 c. 1.5 in.  b. Cosmic rays
 d. 0.25 in.  c. Infrared rays
193. Resistance welding was developed  d. Ultraviolet rays
by this man in and revolutionized the 200. The voltage across an SCR when it
welding industry. is turned on is about

 a. Isaac Asimov  a. 0.5 V

 b. Karel Capek  b. 0.1 V
 c. Thomas Seebeck  c. 1 V
 d. Elihu Thomson  d. 5 V
194. The year when resistance welding
was discovered.
201. For an SCR, dv/dt protection is
achieved through the use of:</>
 a. 1935
 b. 1798
 A. RL in series with SCR
 c. 1886
 B. RC across SCR
 d. 1945
 C. L in series with SCR
195. It is the fusion or growing of the
 D. RC in series with SCR
materials being together.
202. A technique use to turn off a
thyristor using an external circuit which
 a. Coalition
 b. Coincidence causes the anode to become negatively
 c. Coalescense biased.
 d. Mixing
 A. force commutation
196. Arc welding requires a voltage
 B. reverse triggering
around _______.
 C. negative feedback
 D. doping
 a. 60 – 100 V
 b. 150 -200 V 203. The turn-off time of thyristor is
 c. 400 – 440 V 30 m sec at 50°C. Its turn-off time at
 d. 1000 – 5000 V 100° is
 A. same
197. During arc welding, the current is in
 B. 15 m sec
the range of _______.
 C. 60 m sec
 D. 100 m sec
 a. 1 – 5 A
204. The peak and valley currents of the
 b. 5 – 50 A
 c. 50 – 400 A PUT are typically _____ those of a
 d. 500 – 4000 A similarly rated UJT.
198. The body structure of the car is
 A. lower than
welded by ______.
 B. the same as
 C. higher than
 a. Gas welding
 D. None of the above
205. What is a solid state equivalent of a  B. SCS
gas filled triode?  C. TRIAC
 D. Shockley diode
 A. Triac 212. The UJT operates in what region
 B. Thyristor after peak point?
 C. SCR
 D. SCS  A. Cut off
206. The method(s) for turning off an  B. Negative resistance
SCR is (are) categorized as _____.  C. Saturation
 D. Positive resistance
 A. current interruption 213. What is basically a two-terminal
 B. forced commutation parallel-inverse combination of
 C. both current interruption and forced semiconductor layers that permits
commutation triggering in either direction?
 D. None of the above
207. In a certain UJT rB1 is 2.5 kΩ and  A. DIAC
rB2 = 4 kΩ. What is the intrinsic standoff  B. TRIAC
ratio?  C. QUADRAC
 D. Shockley Diode
 A. 0.61538 214. Which device does not have a gate
 B. 0.38461 terminal?
 C. 2.6
 D. 0.8125  A. Triac
208. When SCR starts conducting, then  B. SCR
_____ losses all control.  C. FET
 D. Diac
 A. gate 215. The four-layer devices with a
 B. anode control mechanism are commonly
 C. cathode referred to as _____.
 D. anode supply
209. You have the schematic diagram of  A. thyristors
several types of circuits. Which of these  B. transistors
circuits most likely uses a triac?  C. diodes
 D. None of the above
 A. an oscillator 216. What is that voltage above when
 B. an ac motor control the SCR enters the conduction region?
 C. a programmable oscillator
 D. an amplifier  A. Reverse breakover voltage
210. Determine RB1 for a silicon PUT if it  B. Forward breakover voltage
is determined that h = 0.84, VP = 11.2  C. Holding voltage
V, and RB2 = 5 kΩ.  D. Trigger voltage
217. It is a three-terminal silicon diode
 A. 12.65 kΩ with the ability to control a large ac
 B. 16.25 kΩ power with a small signal.
 C. 20.00 kΩ
 D. 26.25 kΩ  A. TRIAC
211. Which of the following devices does  B. SCR
not have a cathode terminal?  C. UJT
 D. SCS
 A. SCR
218. The smallest amount of current that 224. When the temperature increases,
the cathode-anode can have, and still the intrinsic standoff ratio
sustain conduction of an SCR is called
the:  A. increases
 B. decreases
 A. maximum forward current  C. essentially constant
 B. maximum forward gate current  D. becomes zero
 C. holding current 225. SCRs have been designed to control
 D. reverse gate leakage current powers as high as _____, with individual
219. It is the minimum additional current ratings as high as _____ at _____.
that can make up for any missing input
(gate) current in order to keep the  A. 1800 MW, 10 A, 2000 V
device ON.  B. 1800 MW, 2000 A, 10 V
 C. 10 MW, 2000 A, 1800 V
 A. leakage current  D. 2000 MW, 10 A, 1800 V
 B. ac current 226. An SCR is a member of what
 C. holding current family?
 D. switching current
220. The PUT (programmable unijunction  A. Thyrector
transistor) is actually a type of:  B. Thyratron
 C. Thyristor
 A. UJT thyristor  D. Transistor
 B. FET device 227. Which of the following can change
 C. TRIAC the angle of conduction in SCR?
 D. SCR
221. What is the typical value of the  A. Changing anode voltage
interbase resistance of UJTs?  B. Changing gate voltage
 C. Reverse biasing the gate
 A. 20 KΩ  D. Changing cathode voltage
 B. Between 4 to 4 KΩ 228. What is the frequency range of
 C. 4 KΩ application of SCRs?
 D. Between 4 to 10 KΩ
222. Which of the following is a four-  A. About 10 kHz
layer diode with an anode gate and a  B. About 50 kHz
cathode gate?  C. About 250 kHz
 D. About 1 mHz
 A. SCS 229. The minimum operating voltage of
 B. SCR the UJT is typically _____ that of a
 C. SBS similarly rated PUT.
 D. SUS
223. SCR is a rectifier constructed of  A. lower than
silicon material. Silicon is chosen  B. the same as
because  C. higher than
 D. None of the above
 A. it is the most abundant material 230. A UJT is sometimes called a ____
 B. of its strength and ruggedness diode.
 C. it is much cheaper than any other material
 D. of its high temperature and power  A. double-based
capabilities  B. single-based
 C. a rectifier
 D. a switching diode 238. Which of the following conditions is
231. It is like a low current SCR with two necessary for triggering system for
gate terminals. thyristors?

 A. UJT  A. It should be synchronized with the main

 B. PUT supply
 C. SCR  B. It must use separate power supply
 D. SCS  C. It should provide a train of pulses
232. What is the typical value of the  D. None of these
reverse resistance of SCRs? 239. A normally operated SCR has an
anode which is _____ with respect to
 A. 1 Ω to 10 Ω cathode.
 B. 100 Ω to 1 kΩ
 C. 1 kΩ to 50 kΩ  A. negative
 D. 100 kΩ or more  B. positive
233. Which of the following is the normal  C. at zero potential
way to turn on a diac?  D. at infinite potential
240. Which of the following devices has
 A. By breakover voltage (have) four layers of semiconductor
 B. By gate voltage materials?
 C. By gate current
 D. By anode current  A. Silicon-controlled switch (SCS)
234. In a SCR circuit, the angle of  B. Gate turn-off switch (GTO)
conduction can be changed by changing  C. Light-activated silicon-controlled rectifier
(LASCR)
 A. anode voltage  D. All of the above
 B. anode current 241. How many pn junction does SCRs
 C. forward current rating have?
 D. gate current
235. The function of snubber circuit  A. Two
connected across the SCR is to:  B. Four
 C. Three
 A. Suppress dv/dt  D. Five
 B. Increase dv/dt 242. The silicon-controlled switch (SCS)
 C. Decrease dv/dt is similar in construction to the
 D. Decrease di/dt
236. An SCR is made of what material?  A. triac.
 B. diac.
 A. Silicon  C. SCR.
 B. Carbon  D. 4-layer diode.
 C. Germanium 243. Which of the following devices has
 D. Gallium-arsenide nearly the same turn-on time as turn-off
237. The SCR can exercise control over time?
_____ of ac supply.
 A. SCR
 A. positive or negative half-cycle  B. GTO
 B. both positive and negative half-cycles  C. SCS
 C. only positive half-cycle  D. LASCR
 D. only negative half-cycle
244. Which of the following is (are) the  A. 10.605
advantages of the SCS over a  B. 5.76912
corresponding SCR?  C. 6.46915
 D. 0.8125
 A. Reduced turn-off time 251. The SCR is turned-off when the anode current
 B. Increased control and triggering sensitivity falls below
 C. More predictable firing situation
 D. All of the above  A. forward current rating
 B. breakover voltage
245. An effect that reduces the
 C. holding current
possibility of accidental triggering of the  D. latching current
SCS. 252. When an SCR is combined to a switch, it is
considered as a _____ switch.
 A. Miller effect
 B. Rate effect  A. bidirectional
 C. End effect  B. mechanical
 D. Flywheel effect  C. unidirectional
246. An SCR whose state is controlled by  D. omnidirectional
the light falling upon a silicon 253. The p-type emitter of a UJT is _____ doped
semiconductor layer of the device.
 A. lightly
 A. SCS  B. moderately
 C. heavily
 B. GTO
 D. not
 C. Thyristor
254. An SCR is a _____ triggered device.
 D. LASCR
247. Power electronics deals with the  A. current
control of ac power at what frequencies  B. power
essentially?  C. voltage
 D. noise
 A. 20 KHz 255. Anode current in a thyristor is made up of:
 B. 1000 KHz
 C. Frequencies less than 10 Hz  A. Electrons only
 D. 60 Hz frequency  B. Electrons or holes
248. To turn on the UJT, the forward bias  C. Electrons and holes
 D. Holes only
on emitter diode should be _____ the
256. Once a DIAC is conducting, the only way to
peak point voltage.
turn it off is with:
 A. more than
 A. a positive gate voltage
 B. less than  B. a negative gate voltage
 C. equal to  C. low-current dropout
 D. twice  D. breakover
249. What is the resistance of a certain 257. The V-I characteristics for a triac in the first
4-layer diode in the forward-blocking and third quadrants are essentially identical to those
region if VAK = 15V and IA = 1 uA of _____ in the quotation.

 A. 15 Ω  A. SCR
 B. 21.21 MΩ  B. UJT
 C. 15 M Ω  C. Transistor
 D. 10.61 MΩ  D. SCS
250. What is the peak-point voltage for 258. To turn off the SCR, which of the following is
the UJT in problem 76 if VBB = 15V? done?
  A. Reduce gate voltage to zero  C. Reverse current
 B. Reverse bias the gate  D. Trigger current
 C. Reduce anode voltage to zero 266. A diac is turned on by
 D. Reduce cathode voltage to zero
259. Your boss has asked you to recommend a  A. breakover voltage
thyristor that will enable you to turn it on with a  B. gate current
pulseand also turn it off with a pulse. Which of the  C. gate voltage
following should you recommend?  D. anode current
 A. an SCR 267. You have a light-dimmer circuit using an SCR.
 B. an SCS In testing the circuit, you find that IG = 0 mA and
 C. a PUT the light is still on. You conclude that the trouble
 D. a triac might be one of the following:
260. The current from that semiconductor device
when it is reversed biased.  A. the SCR is open.
 B. the switch is faulty.
 A. maximum forward current  C. the gate circuit is shorted.
 B. maximum forward gate current  D. this is normal; nothing is wrong.
 C. holding current 268. Which equation defines the intrinsic standoff
 D. leakage current ratio (η) of UJTs?
261. What is the range of the turn-on times in high-
power SCR devices?  A. RB1 / (RB1 + RB2)
 B. (RB1 + RB2) / RB1
 A. 30 µs to 100 µs  C. (RB1 + RB2) / RB2
 B. 10 µs to 25 µs  D. RB1 + RB2
 C. 5 µs to 8 µs 269. The voltage across an SCR when it is turned
 D. 1 µs to 5 µs on is about
262. You need to design a relaxation oscillator
circuit. The most likely device to use might be  A. 0.5 V
 B. 0.1 V
 A. an SCR.  C. 1 V
 B. a UJT.  D. 5 V
 C. a triac. 270. The typical turn-off time of an SCR is about
 D. a 4-layer diode.
263. The ________ can be externally programmed  A. 20 to 40 μs
to turn on at a desired anode-to-gate voltage level.  B. 5 to 40 μs
 C. 1 to 5 μs
 A. UJT  D. 15 to 25 μs
 B. PUT 271. Which of the following devices has the
 C. SCR smallest turn-off time?
 D. SCS
264. It is the minimum current which must pass  A. SCR
through a circuit in order for it to remain in the  B. GTO
‘ON’ state.  C. SCS
 D. LASCR
 A. leakage current 272. A triac is equivalent to two SCRs
 B. ac current
 C. holding current  A. in parallel
 D. switching current  B. in inverse-parallel
265. What is that value of current below which the  C. in series
SCR switches from the conduction state to the  D. in inverse-series
forward blocking region under stated conditions? 273. It is the phase angle relative to the power line
at which point the gate is fired to commit the anode
 A. Holding current to conduct to the cathode
 B. Forward current
  A. right angle  A. show high resistance in both directions
 B. reverse angle  B. show low resistance with positive on anode and
 C. conduction angle negative on cathode, and high resistance when
 D. firing angle reversed
274. It is the total resistance of the silicon bar from  C. show high resistance with negative on anode and
one end to another with emitter terminal open. positive on cathode, and low resistance when
reversed
 A. gate resistance  D. show low resistance in both directions
 B. base resistance 282. The UJT may be used as
 C. emitter resistance
 D. interbase resistance  A. an amplifier
275. Holding current of a thyristor is:  B. a rectifier
 C. a sawtooth generator
 A. Less than latching current  D. a multivibrator
 B. More than latching current 283. A resistor connected across the gate and
 C. Equal to latching current cathode of an SCR in a circuit increases its
 D. Zero
276. An SCR is a solid state equivalent of which  A. dv/dt rating
tube?  B. Holding current
 C. Noise Immunity
 A. Triode  D. Turn-off time
 B. Gas-filled triode 284. AC power in a load can be controlled by
 C. Pentode connecting
 D. Tetrode
277. What is the typical turn-on time of an SCR?  A. two SCRs in series
 B. two SCRs in parallel
 A. 1 μs  C. two SCRs in parallel opposition
 B. 5 μs  D. two SCRs in series opposition
 C. 10 μs 285. An SCR combines the feature of
 D. 3 μs
278. An SCR is a solid state equivalent of which  A. a rectifier and resistance
tube?  B. a rectifier and capacitor
 C. a rectifier and transistor
 A. Triode  D. a rectifier and inductor
 B. Gas-filled triode 286. It is voltage-controlled fully
 C. Pentode controllable thyristor similar in operation with GTO
 D. Tetrode but it has a voltage controlled insulated gate.
279. It is a special type of thyristor, which is a high-  A. PUT
power semiconductor device but are fully  B. MCT
controllable switches which can be turned on and  C. UJT
 D. MGT
off by their third lead.
 A. PUT 287. The three terminals of a triac are
 B. MCT
 C. SCS  A. drain, source, gate
 D. GTO  B. two main terminals and a gate terminal
280. When the temperature increases, the inter-base  C. cathode, anode and gate
resistance of a UJT  D. anode, source, gate
288. A triac can pass a portion of _____ half cycle
 A. Remains unchanged through the load
 B. Increases
 C. Decreases  A. only positive
 D. is zero  B. only negative
281. When checking a good SCR or TRIAC with an  C. both positive and negative
ohmmeter it will:  D. neither positive nor negative
289. When the SCR is OFF, the current in the  A. SCR
circuit is  B. Quadric
 C. Shockley Diode
 A. exactly zero  D. Diac
 B. large leakage current 297. An opto-isolator contains _____.
 C. small leakage current
 D. thermal current  A. an infrared LED
290. What is a three terminal device used to control  B. a photodetector
large current to a load?  C. both an infrared LED and a photodetector
 D. None of the above
 A. SCR 298. Which of the following devices is
 B. SCS unquestionably of the greatest interest today?
 C. GTO
 D. Thyristor  A. SCR
291. What Greek word which means “switch”?  B. GTO
 D. LASCR
 A. Ristor  D. SCS
 B. Trans 299. In a UJT maximum value of charging
 C. Thy resistance is associated with:
 D. Thyristor
292. The ________ can conduct current in either  A. Peak point
direction and is turned on when a breakover voltage  B. Valley point
is exceeded.  C. Any point between peak and valley point
 D. After the valley point
 A. SCR 300. When the firing angle of SCR is increased, its
 B. Diac output
 C. SCS
 D. Triac  A. decreases
293. A resistor connected across the gate and  B. increases
cathode of an SCR increases its:  C. remains unchanged
 D. doubles
 A. Turn off time
 B. Holding current
 C. Noise immunity
 D. dv/dt rating
294. Like an SCR, it is also a four layer device but
with a gate connected to the N-region adjacent to
the anode.

 A. TRIAC
 B. PUT
 C. DIAC
 D. SCS
295. An SCR is made of silicon and not germanium
because silicon.

 A. is inexpensive
 B. has low leakage current
 C. is mechanically strong
 D. is tetravalent
296. The triac is fundamentally a/an _____ with a
gate terminal for controlling the turn-on conditions
of the bilateral device in either direction.