SMD Type MOSFET

P-Channel MOSFET
AO3401A (KO3401A)

SOT-23-3 Unit: mm
2.9 -0.1
+0.2

0.4 -0.1
+0.1

■ Features

0.4
3

● VDS (V) =-30V

+0.2
2.8 -0.1

+0.2
1.6 -0.1
● ID =-4 A (VGS =-10V)

0.55
1 2
● RDS(ON) ＜ 50mΩ (VGS =-10V)
0.95 -0.1
+0.1
0.15 -0.02
+0.02

● RDS(ON) ＜ 60mΩ (VGS =-4.5V) 1.9 -0.2

+0.1

● RDS(ON) ＜ 85mΩ (VGS =-2.5V)

+0.2
1.1 -0.1
1. Gate
2. Source

+0.1
0.68 -0.1
D

0-0.1
3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±12
TA=25°C -4
Continuous Drain Current ID
TA=70°C -3.2 A
Pulsed Drain Current IDM -27
TA=25°C 1.4
Power Dissipation PD W
TA=70°C 0.9
t ≤ 10s 90
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 125 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 80
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

P-Channel MOSFET
AO3401A (KO3401A)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-30V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.5 -1.3 V
VGS=-10V, ID=-4A 50
VGS=-10V, ID=-4A TJ=125℃ 75
Static Drain-Source On-Resistance RDS(On) mΩ
VGS=-4.5V, ID=-3.5A 60
VGS=-2.5V, ID=-2.5A 85
On state drain current ID(ON) VGS=-10V, VDS=-5V -27 A
Forward Transconductance gFS VDS=-5V, ID=-4A 17 S
Input Capacitance Ciss 645
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 80 pF
Reverse Transfer Capacitance Crss 55
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 4 12 Ω
Total Gate Charge (10V) 14
Qg
Total Gate Charge (4.5V) 7
VGS=-10V, VDS=-15V, ID=-4A nC
Gate Source Charge Qgs 1.5
Gate Drain Charge Qgd 2.5
Turn-On DelayTime td(on) 6.5
Turn-On Rise Time tr VGS=-10V, VDS=-15V, RL=3.75Ω, 3.5
Turn-Off DelayTime td(off) RGEN=3Ω 41 ns
Turn-Off Fall Time tf 9
Body Diode Reverse Recovery Time trr 11
IF=-4A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr 3.5 nC
Maximum Body-Diode Continuous Current IS -2 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking
Marking X1**

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SMD Type MOSFET

P-Channel MOSFET
AO3401A (KO3401A)
■ Typical Characterisitics

25 20
10V VDS=-5V
4.5V
20
15

15
-ID (A)

-ID(A)
-2.5V 10
10

5 125°C 25°C
5
VGS=-2.0V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3

-VDS (Volts) -VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

100 1.8
Normalized On-Resistance

1.6 VGS=-10V
80
VGS=-2.5V ID=-4A
RDS(ON) (mΩ )

1.4
17
VGS=-4.5V
60 ID=-3.5A 5
VGS=-4.5V
1.2
VGS=-2.5V
40 ID=-2.5A
1
VGS=-10V

20 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

150 1.0E+01
ID=-4A
130 1.0E+00

110 1.0E-01
RDS(ON) (mΩ )

IS (A)

90 125°C 1.0E-02 125°C

70 1.0E-03 25°C

50 25°C 1.0E-04

30 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 SMD Type MOSFET

P-Channel MOSFET
AO3401A (KO3401A)
■ Typical Characterisitics
10 1000
VDS=-15V
ID=-4A
8 800
Ciss

Capacitance (pF)
-VGS (Volts)

6 600

4 400

Coss
2 200

Crss
0 0
0 5 10 15 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TA=25°C

10.0 10µs 1000

RDS(ON) 100µs
-ID (Amps)

Power (W)

limited
1.0 1ms 100
10ms

0.1 TJ(Max)=150°C 10
TA=25°C 10s
DC
0.0 1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
.
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area Ambient

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=125°C/W

0.1

PD
0.01
Single Pulse Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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