Microelectronics Journal 43 (2012) 358–363

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Microelectronics Journal
journal homepage: www.elsevier.com/locate/mejo

Analytical modeling for 3D potential distribution of rectangular gate (RecG)

gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions
Dheeraj Sharma, Santosh Kumar Vishvakarma n
Nanoscale Devices, VLSI/ULSI Circuit and System Design Lab., Electrical Engineering Discipline, School of Engineering, Indian Institute of Technology (IIT),
Indore 452017, Madhya Pradesh, India

a r t i c l e i n f o a b s t r a c t

Article history: In this paper, we have introduced an analytical subthreshold and strong inversion 3D potential model
Received 1 November 2011 for rectangular gate (RecG) gate-all-around (GAA) MOSFET. The subthreshold and strong inversion
Received in revised form potential distribution in channel region of a RecG MOSFET is obtained respectively by solving 3D
8 February 2012
Laplace and 3D Poisson equations. The assumed parabolic potential distribution along the z-axis in
Accepted 9 February 2012
channel direction is appropriately matched with 3D device simulator after consideration of z-depended
Available online 6 March 2012
characteristic length in subthreshold region. For accurate estimation of short channel effects (SCE), the
Keywords: electrostatics near source and drain is corrected. The precise gate-to-gate potential distribution is
Rectangular gate (RecG) obtained after consideration of higher order term in assumed parabolic potential profile. The model
Gate-all-around (GAA) MOSFET
compares well with numerical data obtained from the 3D ATLAS as a device simulator and deckbuild as
Potential
an interactive runtime of Silvaco Inc.
Characteristic length
Subthreshold and strong inversion regions & 2012 Elsevier Ltd. All rights reserved.

1. Introduction thickness, by using high-k gate dielectric instead of SiO2.

The single gate bulk metal oxide semiconductor field effect
transistor (MOSFET) is almost at the end of the roadmap because
as scaling the close proximity between source and drain reduces
the capability of gate electrode to control the potential distribu-
tion and the bulk-silicon transistor is facing serious issues such as
short channel effects (SCE) that start plaguing the bulk MOSFETs
technology [1]. The main short channel effects are threshold
voltage roll-off (due to charge sharing), degradation of subthres-
hold swing and drain induced barrier lowering (DIBL) effect. As a
result, the off state current increases and the ON–OFF current
ratio are degraded [2]. Therefore, the device performance is
worsened and it seems to replace bulk single gate MOSFET by
multigate nanoscale MOSFETs.
The multiple-gate MOSFETs (MuGFETs) offer superior control
of channel due to multiple gates that suppress SCE and leakage
currents [3]. This opens the opportunity for further down scaling
of device and supply voltage by multigate transistor [4]. The use
of strained silicon, a metal gate and high-k dielectric as the gate
insulator can further enhance the current drive of the device. The
natural length can be reduced by decreasing the gate oxide
n doped RecG GAA MOSFET. The circular gate (CirG), square gate
Corresponding author.
E-mail addresses: dheerajs@iiti.ac.in (D. Sharma), skvishvakarma@iiti.ac.in,
svishvakarma@gmail.com (S. Kumar Vishvakarma).
The circuit performance also benefits from novel gate stack
material, reduces parasitic capacitance and hole mobility
improvement. Therefore, the MuGFETs are strong candidates for
replacing conventional single gate MOSFET in future [5].
The gate-all-around (GAA) device such as circular gate (CirG)
[6–8], square gate (SqG) [9–11] and rectangular gate (RecG) offers
excellent electrostatic control of the channel and robustness
against SCE. The GAA device has higher current drivability, ideal
subthreshold swing and mobility enhancement at a certain
crystal orientation are achieved. The improvement in perfor-
mance of device is due to gate electrode wrapped around four
sides of device [12], which gives volume inversion, carriers are
not confined near to Si/SiO2 interface [13], no floating body effect,
larger number of equivalent number of gate (ENG) and reduced
natural length as compare to single gate and double gate
MOSFETs [14]. The disadvantage of the GAA device is the small
drain current drivability because the wire channel width is very
narrow. To overcome the problem of small drain current, the
multiple surrounding gate channels can be stacked on top of one
another, while sharing common gate, source and drain. Therefore,
the current drive per unit will be enhanced [15].
An analytical modeling for 3D potential distribution in sub-
threshold and strong inversion regions is presented for lightly
(SqG) and ti(ple)-gate MOSFET can be considered as a special case
of modeled RecG MOSFET. The paper is organized as follows: in

0026-2692/$ - see front matter & 2012 Elsevier Ltd. All rights reserved.
doi:10.1016/j.mejo.2012.02.001
 D. Sharma, S. Kumar Vishvakarma / Microelectronics Journal 43 (2012) 358–363 359

Section 2, we describe the device electrostatics. We deal with long

channel, short-channel and precise gate-to-gate potential model-
ing in Section 3. For intact range of operation modeling of strong
inversion region is presented in Section 4. Finally, the main
conclusions will be drawn in Section 5.

2. Device electrostatics

The proposed RecG device modeled in this paper has gate

length L¼ 30 nm, oxide thickness tox ¼1.5 nm, silicon height
h¼24 nm, silicon width w ¼12 nm and oxide relative dielectric
constant Eox ¼ 7. The doping density of the p-type silicon body is
NA ¼ 1015 cm3 . The gate material has near-midgap metal work
function 4.53 eV. The Schottky contacts have work function of
4.17 eV (near to that of n þ silicon) assumed for source and drain.
To facilitate the modeling, the gate insulator is replaced by an
electrostatically equivalent silicon layers with thickness
t 0ox ¼ t ox Esi =Eox , where Esi is the relative permittivity of silicon [16].
Figs. 1 and 2 show the cross-sectional and 3D ATLAS [17]
views of RecG MOSFET, where the middle yellow portion is silicon
having w as a width and h as a height. The blue portion of figure is
SiO2 having thickness of t 0ox wrapped around the silicon portion.
Fig. 2. 3D view of rectangular gate (RecG) GAA MOSFET. (For interpretation of the
The extended portion of channel act as the Schottky contacts. In references to color in this figure legend, the reader is referred to the web version of
figures, x-axis, y-axis and z-axis are the axis of coordinates and this article.)
origin (0,0,0) is situated at source end of channel length as
indicated in diagram, where x-axis in the direction of width,
y-axis in the direction of height and z-axis is perpendicular to the 3.1. Long channel potential distribution
(x,y) plane in the direction of channel length, where a ¼ w þ 2t 0ox is
a width of extended body including the gate insulator, and In the presented model, we have taken the assumption of
b ¼ hþ 2t 0ox is a height of extended body including the gate parabolic potential distribution in the directions perpendicular to
insulator. the gates in the middle portion of channel. Therefore, the
potential distribution in channel region, not too close to the
source and drain, can be written as
"   #"   #
3. Subthreshold potential distribution 2x 2 2y 2
^
fðx,y,zÞ ¼ f ð0; 0,zÞ 1 1 þ V gs V FB , ð1Þ
a b
The analysis of effect created by source and drain electric field
in channel region is very important in subthreshold region as where x, y, and z are the axis of coordinates, Vgs is a gate-to-source
continuous reduction in dimensions of transistors. In subthres- voltage, VFB is flat band voltage and f ^ ð0; 0,zÞ ¼ fð0; 0,zÞV gs þ V
FB
hold domain, we are dealing with negligible body charge density is potential distribution along the z-axis. As we know that the 3D
2
and 3D Laplace equation for potential distribution [18]. To Laplace equation can be written as r ðfðx,y,zÞÞ ¼ 0. Taking the
account for short channel effect, additional functional form is second derivatives of Eq. (1) with respect to x, y, z in 3D Laplace
used near source and drain. equation, we obtained
" #
^ ð0; 0,zÞ
@2 f 32ðx2 þ y2 Þ8ða2 þb Þ
2
þ ^ ð0; 0,zÞ
f ¼ 0: ð2Þ
@z2 2 2
a2 b 4ðx2 b þ y2 a2 Þ þ 16x2 y2
y-axis
To obtain the potential distribution along the z-axis using x¼0
and y¼0 in (2), we got
^ ð0; 0,zÞ f
@2 f ^ ð0; 0,zÞ
2
 ¼ 0: ð3Þ
@z l2
In (3) l is the characteristic length of field penetration from source/
qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
b x-axis drain into the device body and is given as l ¼ b= 8ð1 þ AR2 Þ, where
h
(0,0,0) AR ¼ ðb=aÞ is the aspect ratio of device. Using boundary conditions,
f^ ð0; 0,0Þ ¼ V bi V gs þV FB and f^ ð0; 0,LÞ ¼ V bi V gs þV FB þ V ds , where
Vbi is the built-in voltage at the two contacts and Vds is the drain-to-
w
source voltage. After solving the differential equation (3), the
following solution for center potential given as:
  hzi
Lz
ðV bi V gs þ V FB Þ sinh þ ðV bi V gs þ V FB þ V ds Þ sinh
a l l
f^ ð0; 0,zÞ ¼   :
L
Fig. 1. Cross-sectional diagram of rectangular gate (RecG) GAA MOSFET. (For sinh
l
interpretation of the references to color in this figure legend, the reader is referred
to the web version of this article.) ð4Þ
360 D. Sharma, S. Kumar Vishvakarma / Microelectronics Journal 43 (2012) 358–363

0.85
Model
Model
3D ATLAS
3D ATLAS
0.75
Potential (V)

ForH=24nm
For H=24nm
0.65
For
For H=12nm
H=12nm

0.55

0.45
0 5 10 15 20 25 30
Distance (nm)
Fig. 3. Comparison of modeled and numerical simulation of potential distribution Fig. 4. Comparison of modeled and numerical simulation of potential distribution
along the z-axis. along the z-axis.

Combined with (1), expression (4) gives full 3D potential distribu-

tion in the device body for long channel.
Fig. 3 shows potential distribution along the z-axis and our
analysis found that the difference between modeled and 3D
ATLAS with few millivolts throughout the channel length.
The effect is enhanced when width and height is comparable
to channel length as shown in figure. To overcome this issues
related to SCE, we introduce z-dependent l in the following
section.

3.2. Short-channel potential distribution

The long channel potential model for the potential is only valid
for long channel device, even though it is obtained from the 3D
Laplace equation. This arise from the fact that the parabolic
approximation assumed to solve (1) is not appropriate assump-
tion especially close to the source and drain contacts where the Fig. 5. Effect of scaling on device center potential distribution.
potential starts to flatten out in the (x,y) plane. Hence, we got a
mismatch along the source and drain axis. To rectify this error, we
have introduced two auxiliary boundaries condition by introdu- z on l is
cing a z-dependent l    
Lz z
ðV bi V gs þV FB Þ sinh þ ðV bi V gs þ V FB þ V ds Þ sinh
  lðzÞ lðzÞ
L 2 f^ ð0; 0,zÞ ¼   :
L
lðzÞ ¼ lc þ a z , ð5Þ sinh
2 lðzÞ
ð7Þ
where lc and a are the bias-dependent parameters derived from
^ ð0; 0,L=2Þ and the electrical field E at the Using the expression (7) of f ^ ð0; 0,zÞ in (1) and taking x ¼ y ¼ 0
the center potential f c s
center of the source (0,0,0) as follows: gives the fð0; 0,zÞ along the z-axis.
In Fig. 4 the excellent agreement has been achieved for
 
L L potential distribution along the z-direction at different values of
lc ¼ l ¼ 2 3 ð6Þ
2 V ds Vds and Vgs. Fig. 5 shows the effect of channel length variation on
V V þ V þ
1 6 2 7
bi gs FB center potential obtained from conformal mapping techniques. It
2 cosh 6 4   7
5
^ L is observed that the center potential is constant for channel
f 0; 0, V gs þ V FB
2 length greater than 60 nm and variation is occurred for channel
length lesser than 60 nm. The quite satisfactory agreement was
and obtained with the 3D ATLAS.
  
2 V bi V gs þ V FB
a¼ lc :
L Es 3.3. Precise gate-to-gate potential modeling for RecG GAA MOSFET

The value of f^ ð0; 0,L=2Þ and the electrical field E was obtained The center potential distribution from (7) can be used in (1) to
c s
from the conformal technique [19]. Hence, the expression for obtain the gate-to-gate potential distribution. But, the obtained
potential distribution along the z-axis considered the effect of gate-to-gate potential distribution by proposed model does not
 D. Sharma, S. Kumar Vishvakarma / Microelectronics Journal 43 (2012) 358–363 361

exactly follow the parabolic distribution along the gate-to-gate device center (0,0,L/2) for V ds ¼ V gs ¼ 0 V is simulated and mod-
direction. For more precise gate-to-gate distribution, we need to eled in Fig. 6. Fig. 6 shows modeled and numerical simulation of
consider higher order term in (1). Therefore, the precise gate-to- potential distribution along the direction of x-axis and y-axis,
gate potential distribution can be modeled as when we have considered the precise gate-to-gate potential
"  2 !  2 ! modeling for RecG MOSFET.
2x 2y
fðx,y,zÞ ¼ f^ ð0; 0,zÞ bsub 1 1
a b
 4 !  4 !#
2x 2y
þ gsub 1 1 þ ðV gs V FB Þ: ð8Þ
a b 3.4. Potential distribution near to source and drain

Note that in expression (8), we have included only the fourth The approximation of parabolic potential distribution is not
order term in the assumed potential distribution given in expres- applicable near to source and drain due to flattening of potential
sion (1), where bsub and gsub are constant. To estimate the in (x,y) cross-sectional. This flattening of potential occurred up to
numerical value of bsub and gsub , use the 3D Laplace equation characteristic distance of source and drain that can be defined as
r2 ðfðx,y,zÞÞ ¼ 0. At center point (0,0,z) the value of bsub þ gsub ¼ 1. ls ¼ lð0Þ ¼ lc þ aðL=2Þ2 and shown by equipotential (gray) area in
Now, the bsub can be obtained from (8) and 3D Laplace equation as upper left cross-section of Fig. 7. The flattening of potential in the
0 10  1
! ^ 0; 0, L (x,y) plane along the x-axis follow up to width a0 ðzÞ ¼ w½1ðz=ls Þ
  2 2 @2 f
1 a b B CB 2 C near to source and a0 ðzÞ ¼ w½1ððLzÞ=ls Þ near to drain. In the
bsub ¼ B 1 CB C: ð9Þ
8 2 @ L A@ @z2 A case of flattening of potential in the (x,y) plane along the y-axis
a2 þ b ^
f c 0; 0,
2 follow up to width b0 ðzÞ ¼ h½1ðz=ls Þ near to source and
b0 ðzÞ ¼ h½1ððLzÞ=ls Þ near to drain.
Now, the second derivative of central potential can be obtained
Hence, the modified potential distribution for z o ls and
from (4) as
z 4Lls can be expressed as follows fðx,y,zÞ ¼ fð0; 0,zÞ in equi-
0  1
^ 0; 0, L
@2 f
potential (gray) area, and outside this equipotential (gray) area
B 2 C þ V FB Þ the potential profile of (1) need to suitably scaled such that it
B C ¼ ðV bi V gs  : ð10Þ
@ @z2 A 2 L exactly match with potential profile of gray area. After scaling the
l cosh
2l potential distribution can be written as
From (9) and (10) the expression for bsub can be obtained as 2 2
3
0 10 1 4ðx2 b þ y2 a2 Þ 16x2 y2
! 6 1 þ 2 7
2 2
 
1 a2 b
2
B 1 CBV bi V gs þV FB C fðx,y,zÞ ¼ f^ ð0; 0,zÞ6
6 a b a2 b 77 þ ðV gs V FB Þ: ð13Þ
bsub ¼ B  CB  C : ð11Þ 4 a0 ðzÞb0 ðzÞ 5
8 2 @ L A@ 2 L A 1 1
a2 þ b f^ c 0; 0, l cosh ab
2 2l
For short channel device, taking z-dependent l expression from However, in the central device region defined as ls rz r Lls , the
(5) to (7) and then the expression of bsub for V ds ¼ 0 can be written expression from (1) to (7) will be applicable as shown by
as equipotential area in upper right cross-section of Fig. 7.
0 10 1 Fig. 8 shows matching of modeled and numerical simulation of
  !
1 2 2
a b B C B C potential distribution along gate-to-gate direction when the
bsub ¼ B 1 C B V bi V gsþ V FB
C distance along the z-axis is less than characteristic distance of
8 2 2 @ L A@ 2 L A
a þb f^ c 0; 0, lc cosh
2 2lc device obtained from (5). The flattening of potential in the (x,y)
      plane follows up to the width a0 ðzÞ ¼ w½1ðz=ls Þ along the x-axis
L L
1 þ aL 2 coth  coth : ð12Þ and b0 ðzÞ ¼ h½1ðz=ls Þ along the y-axis near to source and after
lc lc
that the potential distribution follows parabolic nature of expres-
The value of gsub can be obtained from bsub þ gsub ¼ 1 for both the sion (13).
cases. The calculated value of bsub and gsub from (12) gives precise
gate-to-gate potential distribution along the gate-to-gate direc-
tion. The potential distribution along the x-axis and y-axis at

Fig. 6. Comparison of modeled and numerical simulation of potential distribution Fig. 7. Longitudinal cross-section of the device along the channel axis with
along gate-to-gate. schematic contours plot in two different (x,y) planes.
362 D. Sharma, S. Kumar Vishvakarma / Microelectronics Journal 43 (2012) 358–363

V)
Model

tential(V)
Potential(V)
0.95
0.95
3D ATLAS

Potential(V)
0.9
0.9

0.85
0.85
x axis
x iaxis

0.8
0.8 y axis
y axis

Fig. 8. Comparison of modeled and numerical simulation of potential distribution

0.75
near to source at L=8.
-12 -8 -4 0 4 8 12
Distance (nm)

Fig. 9. Comparison of modeled and numerical simulation of potential distribution

4. Strong inversion modeling along gate-to-gate at L=2 and Vgs ¼ 0.7 V.

To model the device in strong inversion region, we need to

deal with 3D Poisson equation instead of 3D Laplace equation.
The charge density comprises electrons, holes, positively and written as
negatively ionized immobile ions (donor and acceptor). This " #
2
d fðx,zÞ qn2i
concentration of charge depends on the impurity doping level. ¼ eðfðx,zÞ=V Th Þ : ð18Þ
2
dx NA Esi
The highly doped body (N A 51016 cm3 [20]) has adverse effect
on mobility [21] and random dopant density fluctuation [22]. Integrating (18) once with symmetry boundary condition dfðx,zÞ=
Therefore, we consider a lightly doped silicon body for RecG dx9x ¼ 0 ¼ 0, we obtain
MOSFET. For simplicity of derivation, we choose only electron sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
2
density as mobile charge. The electrostatics potential in device is dfðx,zÞ 2kTni qfðx,zÞ=kT qfð0,zÞ=kT
¼7 ðe e Þ, ð19Þ
considered as dx Esi NA
"  2 !  2 !
2x 2y where the positive sign applies for 0 r x r w=2 and the negative
fðx,y,zÞ ¼ f^ ð0; 0,zÞ bstr 1 1 sign for w=2 r x r0. Here, fð0,zÞ is the potential at the center
a b
! !# of the silicon film. Integrating again then the potential along the
 4  4
2x 2y x-axis is obtained as
þ gstr 1 1 þ ðV gs V FB Þ: ð14Þ 0 0sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi 11
a b
2kT @ q2 n2i
fðx,zÞ ¼ fð0,zÞ ln cos@ eðq fð0,zÞ=2kTÞ
xAA: ð20Þ
Further, in (14) we have assumed the parabolic potential dis- q 2Esi kTN A
tribution, where bstr and gstr are constant. At center point (0,0,z)
the value of bstr þ gstr ¼ 1. The 3D Poisson equation along the Si The potential at x ¼ w=2 can be written as
0 0sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi 11
body takes the following form with only charge (electron) term: w  2kT @ q2 n2i w
" # f ,z ¼ fð0,zÞ ln cos@ eqfð0,zÞ=2kT AA: ð21Þ
qn2i 2 q 2Esi kTN A 2
r2 ðfðx,y,zÞÞ ¼ eðfðx,y,zÞ=V Th Þ , ð15Þ
NA Esi
The boundary condition at the Si–SiO2 interfaces
where VTh is the thermal potential, ni is the silicon intrinsic w 

V gs V FB f ,z
concentration. The body doping, NA, is taken as 1015 cm3 which 2 dfðx,zÞ
Eox ¼ 7 Esi : ð22Þ
is much smaller than ni eðfðx,y,zÞ=V Th Þ . We consider only the n-MOS- t ox dx

FET with ðfðx,y,zÞ=V Th Þ b1, so the density of hole is negligible w x¼ 72

[23]. In strong inversion, we can assume that @2 f ^ ð0; 0,zÞ=@z2 ¼ 0

Here VFB is the work function difference between the gate
for center region of device. From Eq. (15) at (x,y,z) ¼(0,0,z) the electrode and intrinsic silicon. The center potential obtained as
value of bstr can be obtained as 0.77 V from (20) to (21) is nicely matched with the 3D ATLAS.
!
2   ðf^ ð0;0,zÞ þ V gs V FB Þ=V ! Fig. 9 shows matching of modeled and numerical simulation of
qn2i a2 b 1 e Th
bstr ¼ : ð16Þ potential distribution along the x-axis and y-axis in strong
2
8ða þ b Þ
2 N A Esi ^
f ð0; 0,zÞ inversion region at z ¼ ðL=2Þ and V gs ¼ 0:7 V.
^ ð0; 0,zÞ can be written as
The value of f

f^ ð0; 0,zÞ ¼ fð0; 0,zÞV gs þ V FB : ð17Þ 5. Conclusion

Using the fact that the electric field at the mid-plane is zero for
symmetric common gate FET and flattening of potential along the
z-axis. The central potential can be obtained by same as that of
the lightly doped double-gate (DG) MOSFET [23]. For a lightly
doped body, the body doping can be neglected. Therefore, the 1D
Poisson equation (along the (x,z) plane) for the silicon region
with only the mobile charge (electron) density for y¼0 can be
In this work an analytical model is developed for 3D potential
distribution of RecG MOSFET in subthreshold and strong inversion
regions. Further, we are in process of modeling square cross-
section, circular cross-section GAA MOSFET using rectangular
cross-section as a unified model. The present model is depended
on assumption of parabolic potential distribution in the central
region of device. The modeling of device electrostatics is based on
 D. Sharma, S. Kumar Vishvakarma / Microelectronics Journal 43 (2012) 358–363
the 3D Laplace and 3D Poisson equations, where the gate oxide is
replaced by an electrostatically equivalent silicon layer. For
consideration of SCE the expression of long channel potential
distribution is modify by taking the effect of z on l. The
approximation of parabolic potential distribution in subthreshold
region is not applicable near to source and drain due to flattening
of potential in (x,y) cross-sectional. Therefore, the modified
expression is presented near to source and drain. The model
predicts the potential distribution in the transverse and long-
itudinal direction in subthreshold region and strong inversion
region with good accuracy. The small deviation in strong inver-
sion region is due to consideration of electron only as a charge
carriers in the 3D Poisson equation.
Acknowledgments
The authors would like to thank to Tor A. Fjeldly, Professor in
Department of Electronic and Telecommunication, Norwegian
University of Science and Technology (NTNU) and Adjunct Pro-
fessor in University Graduate Center (UNIK) Kjeller, Norway for
his helpful discussions.
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