Beruflich Dokumente
Kultur Dokumente
2N7002
N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92
STripFET™II MOSFET
APPLICATIONS
HIGH SWITCHING APPLICATIONS
SOT23-3L TO-92
ORDER CODE
PART NUMBER MARKING PACKAGE PACKAGING
2N7000 2N7000G TO-92 BULK
2N7002 ST2N SOT23-3L TAPE & REEL
THERMAL DATA
TO-92 SOT23-3L
Rthj-amb Thermal Resistance Junction-ambient Max 125 357.1 (*) °C/W
TJ Operating Junction Temperature
- 55 to 150 °C
Tstg Storage Temperature
(*) DEVICE MOUNTED ON A PCB AREA OF 1cm2
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 60 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125°C 10 µA
IGSS Gate-body Leakage VGS = ± 18 V ±100 nA
Current (VDS = 0)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2.1 3 V
RDS(on) Static Drain-source On VGS = 10 V, ID = 0.5 A 1.8 5 Ω
Resistance VGS = 4.5 V, ID = 0.5 A 2 5.3 Ω
2/10
2N7000 - 2N7002
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V, ID = 0.5 A 5 ns
tr Rise Time RG = 4.7Ω VGS = 4.5 V 15 ns
(see test circuit, Figure 1)
Qg Total Gate Charge VDD = 30 V, ID = 1 A, 1.4 2 nC
Qgs Gate-Source Charge VGS = 5 V 0.8 nC
Qgd Gate-Drain Charge (see test circuit, Figure 2) 0.5 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-Off Delay Time VDD = 30 V, ID = 0.5 A, 7 ns
tf Fall Time RG = 4.7Ω, VGS = 4.5 V 8 ns
(see test circuit, Figure 1)
3/10
2N7000 - 2N7002
4/10
2N7000 - 2N7002
5/10
2N7000 - 2N7002
6/10
2N7000 - 2N7002
Fig. 1: Switching Times Test Circuit For Fig. 2: Gate Charge test Circuit
Resistive Load
7/10
2N7000 - 2N7002
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.38 4.78 0.17 0.188
b 0.33 0.48 0.013 0.018
D 4.43 4.83 0.174 0.190
E 3.86 0.152
e1 1.07 1.74 0.042 0.068
L 14.07 14.87 0.553 0.585
S1 0.92 1.12 0.036 0.044
W 0.36 0.56 0.014 0.022
V 4° 4°
8/10
2N7000 - 2N7002
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.903 1.220 0.035 0.048
A1 0.013 0.100 0.0005 0.004
A2 0.890 1.120 0.035 0.044
b 0.370 0.510 0.014 0.020
C 0.085 0.180 0.003 0.007
D 2.800 3.040 0.110 0.120
E 2.100 2.64 0.082 0.104
E1 1.200 1.400 0.047 0.055
e 0.890 1.030 0.035 0.040
e1 1.780 2.050 0.070 0.080
L 0.400 0.600 0.015 0.023
9/10
2N7000 - 2N7002
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
10/10
This datasheet has been download from:
www.datasheetcatalog.com