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AUTOMOTIVE GRADE
AUIRF1324
HEXFET® Power MOSFET
Features
l Advanced Process Technology
D VDSS 24V
l Ultra Low On-Resistance RDS(on) typ. 1.2m:
l 175°C Operating Temperature
max. 1.5m:
c
l Fast Switching G
l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 353A
l Lead-Free, RoHS Compliant
l Automotive Qualified * S ID (Package Limited) 195A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of S
this design are a 175°C junction operating temperature, fast switch- D
G
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable TO-220AB
device for use in Automotive applications and a wide variety of other AUIRF1324
applications.
G D S
Gate Drain Source
A
ISM Pulsed Source Current integral reverse G
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 195A, VGS = 0V g
trr Reverse Recovery Time ––– 46 ––– TJ = 25°C VR = 20V,
ns
––– 71 ––– TJ = 125°C IF = 195A
Qrr Reverse Recovery Charge ––– 160 –––
nC
TJ = 25°C di/dt = 100A/µs g
––– 430 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 7.7 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calcuted continuous current based on maximum allowable junction
Pulse width ≤ 400µs; duty cycle ≤ 2%.
temperature Bond wire current limit is 195A. Note that current Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitation arising from heating of the device leds may occur with as Coss while VDS is rising from 0 to 80% VDSS .
some lead mounting arrangements.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Repetitive rating; pulse width limited by max. junction
temperature. Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax, starting TJ = 25°C, L = 0.014mH Rθ is measured at TJ approximately 90°C
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 195A, di/dt ≤ 450 A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
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AUIRF1324
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
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AUIRF1324
10000 10000
VGS VGS
≤60µs PULSE WIDTH TOP 15V ≤60µs PULSE WIDTH TOP 15V
Tj = 25°C 10V Tj = 175°C 10V
1000 8.0V 8.0V
ID, Drain-to-Source Current (A)
10
100
1
4.0V
4.0V
0.1 10
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)
100
T J = 175°C 1.5
(Normalized)
T J = 25°C
10
1.0
1
VDS = 15V
≤60µs PULSE WIDTH
0.1 0.5
2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100120140160180
100000 14.0
VGS = 0V, f = 1 MHZ
ID= 195A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 12.0 VDS= 19V
VGS, Gate-to-Source Voltage (V)
8.0
10000 Ciss
Coss 6.0
Crss 4.0
2.0
1000 0.0
1 10 100 0 50 100 150 200
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRF1324
1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C 1000
100µsec
100
1msec
100
T J = 25°C Limited by
package
10
10msec
10
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse DC
1.0 1
0.0 0.5 1.0 1.5 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
300 30
ID, Drain Current (A)
250
200 28
150
100 26
50
0 24
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180
ID
1.8
TOP 44A
1000
1.6 83A
BOTTOM 195A
1.4
800
1.2
Energy (µJ)
1.0 600
0.8
400
0.6
0.4
200
0.2
0.0 0
-5 0 5 10 15 20 25 30 25 50 75 100 125 150 175
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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AUIRF1324
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1 0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05 0.0125 0.000008
τJ τC
τJ τ
τ1 0.0822 0.000078
0.02 τ1
τ2 τ3 τ4
0.01 τ2 τ3 τ4 0.2019 0.001110
0.01
Ci= τi/Ri 0.2036 0.007197
Ci i/Ri
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
1000
100
0.05
0.10
10
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AUIRF1324
300
TOP Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)
250 ID = 195A 1. Avalanche failures assumption:
EAR , Avalanche Energy (mJ)
4.5
VGS(th) , Gate threshold Voltage (V)
4.0
3.5
3.0
ID = 250µA
2.5 ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( °C )
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AUIRF1324
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
RD
VDS VDS
VGS
90%
D.U.T.
RG
+
- VDD
V10V
GS 10%
Pulse Width ≤ 1 µs VGS
Duty Factor ≤ 0.1 %
td(on) tr t d(off) tf
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Current Regulator Id
Same Type as D.U.T. Vds
Vgs
50KΩ
12V .2µF
.3µF
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
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AUIRF1324
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1324
Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF1324 TO-220 Tube 50 AUIRF1324
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AUIRF1324
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to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to
discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or
customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to
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