6in1 IGBT Module Spec.No.

IGBT-SP-10011-R5 (P1/8)

MBB600TV6A
Silicon N-channel IGBT

1. FEATURES
* High speed, low loss IGBT module.
* Low thermal impedance due to direct liquid cooling.
* High reliability, high durability module.

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2. ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item Symbol Unit Specification
Collector Emitter Voltage VCES V 650
Gate Emitter Voltage VGES V 20
DC IC 600
Collector Current A
1ms ICp 1200
DC IF 600
Forward Current A
1ms IFM 1200
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Maximum Junction Temperature Tjmax C 175
Temperature under switching o
Tjop C -40 ~ +150
conditions
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Storage Temperature Tstg C -40 ~ +125
Isolation Voltage VISO VRMS 2,500 (AC 1 minute)
Terminals (M6) - 6.0 (1)
Screw Torque N·m
Mounting (M5) - 4.0 (2)
Notes: Recommended Value (1)5.5±0.5N·m (2)3.5±0.5N·m

3. ELECTRICAL CHARACTERISTICS

Item Symbol Unit Min. Typ. Max. Test Conditions

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Collector Emitter Cut-Off Current I CES mA - - 1.0 Vce=650V, Vge=0V, Tj=25 C
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Gate Emitter Leakage Current IGES nA - - ±500 Vge=20V, Vce=0V, Tj=25 C
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1.3 1.65 2.1 Ic=600A, Vge=15V, Tj=25 C
Collector Emitter Saturation Voltage VCE(sat) V o
- 1.9 - Ic=600A, Vge=15V, Tj=150 C
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Gate Emitter Threshold Voltage VGE(TO) V 6.0 6.7 7.5 Vce=5V, Ic=600mA, Tj=25 C
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Input Capacitance Cies nF - 53 - Vce=10V, Vge=0V, f=100kHz, Tj=25 C
Rise Time tr - 0.15 0.4 Vcc=300V, Ic=600A
Turn On Time ton - 0.50 0.9 Ls=30nH , R(ext)=4.7Ω, Cge=56nF
Switching Times s Vge=+15V/0V, Tj=150 C
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Fall Time tf - 0.35 0.8
Turn Off Time toff - 1.20 2.0 Inductive load
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1.1 1.45 1.8 If=600A, VGE=0V, Tj=25 C
Peak Forward Voltage Drop VF V o
- 1.5 - If=600A, VGE=0V, Tj=150 C
Reverse Recovery Time trr s - 0.35 0.8 VCC=300V, Ic=600A,
Turn On Loss Eon(full) mJ/P - 20 30 Ls=30nH, Rg(ext)=4.7Ω, Cge=56nF
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Turn Off Loss Eoff(full) mJ/P - 45 65 Vge=+15V/0V, Tj=150 C
Reverse Recovery Loss Err(full) mJ/P - 15 23 Inductive load
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- 5 - Tc=25 C
Thermistor Resistance R kΩ o
- 0.16 - Tc=150 C
Leakage Current between Thermistor
mA - - 0.1 V=600Vp
and Other Terminals
IGBT Rth(j-w) K /W - - 0.145 Junction to water/fin, 10l/min, 50%LLC
Thermal Resistance
FWD Rth(j-w) K /W - - 0.21 (per 1 arm)

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P2/8)

MBB600TV6A
4. PACKAGE OUTLINE DRAWING
Unit in mm

Weight : 900g
6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P3/8)

MBB600TV6A
5. CIRCUIT DIAGRAM

Thermistor T1, T2 and T3 are located on the

same ceramic substrate with the IGBT and
diode chips of phase U, V and W, respectively.

Note: This temperature measurement is not

suitable for the short circuit or short term over-
load detection and should be used only for the
module protection against long term overload or
malfunction of the cooling system.

6. PRODUCT LABEL

7. DEFINITION OF THE SYMBOLS

6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P4/8)

MBB600TV6A
8. STATIC CHARACTERISTICS

VGE=15V14V13V12V TYPICAL VGE=15V14V13V TYPICAL

1200 1200
Tj=25℃ Tj=150℃
12V
Voltage sence: Voltage sence:
1000 CS* -E* (*:1～6) 1000 CS* -E* (*:1～6)

11V

800 11V

コレクタ電流 IC(A)
800
コレクタ電流 IC(A)

Collector Current
Collector Current

600 600
10V 10V

400 400

9V
9V
200 200

0 0
0 2 4 6 8 10 0 2 4 6 8 10

コレクタ・エミッタ間電圧 VCE(V) コレクタ・エミッタ間電圧 VCE(V)

Collector to Emitter Voltage Collector to Emitter Voltage

Collector Current vs. Collector to Emitter Voltage Collector Current vs. Collector to Emitter Voltage

TYPICAL TYPICAL
12 12
Tj=25℃ Tj=150℃
Voltage sence: Voltage sence:
CS* -E* (*:1～6) CS* -E* (*:1～6)
10 10
コレクタ・エミッタ間電圧 VCE(V)
コレクタ・エミッタ間電圧 VCE(V)

8 8
Collector to Emitter Voltage
Collector to Emitter Voltage

6 6

4 4

Ic=1200A
Ic=1200A 2
2 Ic=600A
Ic=600A

0 0
0 5 10 15 20 0 5 10 15 20

ゲート・エミッタ間電圧 VGE(V) ゲート・エミッタ間電圧 VGE(V)

Gate to Emitter Voltage Gate to Emitter Voltage

Collector to Emitter Voltage vs. Gate to Emitter Voltage Collector to Emitter Voltage vs. Gate to Emitter Voltage
6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P5/8)

MBB600TV6A

TYPICAL TYPICAL
20 1200
Vcc=300V VGE=0
Ic=600A Tj=25℃
Tj=25℃ 1000 Tj=150℃
ゲート・エミッタ間電圧 VGE(V)

Voltage sence:
15
CS* -E* (*:1～6)
800

順電流 IF(A)
Forward Current
Gate to Emitter Voltage

10 600

400

200

0 0
0 1000 2000 0 1 2 3 4 5
ゲート電荷 QG(nC)
順電圧 VF(V)
Gate Charge Forward Voltage

Gate Charge Characteristics Forward Voltage of Free-Wheeling Diode

9. DYNAMIC CHARACTERISTICS

TYPICAL TYPICAL
2.5 2.5
VCC=300V
VGE=+15V/0V VCC=300V
Rgon/RGoff=4.7Ω VGE=+15V/0V
toff Cge=56nF
Cge=56nF
2 2 IC=600A
Tj=150℃
Tj=150℃
t (μS)

Ls≒30nH
スイッチング時間 t(μS)

Ls≒30nH toff
Inductive Load
Inductive Load
1.5 1.5 ton
スイッチング時間

Switting Time
Switching Time

1 1
tf
tr
0.5 0.5 trr
ton
tf
trr
tr
0 0
0 100 200 300 400 500 600 700 0 5 10 15 20
ゲート抵抗 RG(Ω)
コレクタ電流 IC(A)
Gate Resistance
Collector Current

Switching Time vs. Collector Current Switching Time vs. Gate Resistance
6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P6/8)

MBB600TV6A
TYPICAL TYPICAL
60 120
VCC＝300V VCC＝300V Eon
VGE＝+15/0V VGE＝ +15/0V
RG＝4.7Ω
スイッチング損失 Eon,Eoff,Err(mJ/pulse)

IC＝ 600A

スイッチング損失 Eon,Eoff,Err(mJ/pulse)
Eoff
50 100
Cge=56nF Cge=56nF
Tj＝150℃ Tj＝150℃
Ls≒30nH Ls≒30nH
40 Inductive Load 80 Inductive Load
Voltage sense； Voltage sense；
CS* - E* (*：1～6) CS* - E* (*：1～6)
30 60
Eoff
Eon

Switching Loss
Switching Loss

20 40

Err
10 20

Err
0 0
0 100 200 300 400 500 600 700 0 5 10 15 20

コレクタ電流 IC(A) ゲート抵抗 RG(Ω)

Collector Current Gate Resistance

Switching Loss vs. Collector Current Switching Loss vs. Gate Resistance

10000 1
Voltage sence: VGE＝+15V/0V 10l/min(LLC50%)
CS* - E* (*:1～6）
Tj≦150℃
Diode
Transient Thermal Impeadance
過渡熱抵抗 Rth(j-w)(K/W)

1000
IC(A)

0.1 IGBT
Collector Current
コレクタ電流

100

0.01

10

1 0.001
0 100 200 300 400 500 600 700 800 0.001 0.01 0.1 1 10
コレクタ・エミッタ間電圧 VCE(V) 時間 t(s)
Collector to Emitter Voltage Time

Reverse Bias Safe Operation Area (RBSOA) Transient Thermal Impedance Characteristics
6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P7/8)

MBB600TV6A

1600
Voltage sence:
VGE=+15/0V
CS* - E* (*:1～6）
Tj≦150℃
1400

1200
Reverse Recovery Current
逆回復電流 IR(A)

1000

800

600

400

200

0
0 100 200 300 400 500 600 700 800
コレクタ・エミッタ間電圧 VCE(V)
Collector to Emitter Voltage

Reverse Recovery Safe Operation Area (RRSOA)

10. THERMISTOR

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Table1 Specifications of Thermistor(For reference)
For reference(Data from manufacturer)
Nominal zero-power resistance 5kΩ ±3％（25℃）
B value 3375K±2％（25～50℃）
Operating temperature range ‐50～150℃
Thermal time constant（in still air) Approx. 10 sec.
抵抗値 (kΩ)
Resistance
1

0.1
120 100 80 60 40 20 0
温度 (℃)
Temperature

Resistance vs. Temperature

6in1 IGBT Module Spec.No.IGBT-SP-10011-R5 (P8/8)

MBB600TV6A
HITACHI POWER SEMICONDUCTORS

Notices
1. The information given herein, including the specifications and dimensions, is subject to
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be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
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may result from applications of information, products or circuits described in this data
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