Parameter Y Version Units

DYNAMIC PERFORMANCE 58 dB min dB max

Signal to (Noise + Distortion) Ratio1 –66 dB typ
Total Harmonic Distortion (THD)1 –80
Peak Harmonic or Spurious Noise1 dB max dB max
Intermodulation Distortion1, 2 –67 dB typ
Second Order Terms –67
Third Order Terms –80
Channel-to-Channel Isolation1, 2
DC ACCURACY Resolution 10 Bits
Minimum Resolution for Which
No Missing Codes are Guaranteed 10 Bits
Relative Accuracy1 ±1 LSB max
Differential Nonlinearity1 ±1 LSB max
Gain Error1 ±2 LSB max LSB
Gain Error Match1 ± 0.75 max LSB max
Offset Error1 ±2 LSB max
Offset Error Match1 ± 0.75

ANALOG INPUT Input Voltage Range 0 V min

VREF V max
Input Leakage Current2 ±1 µA max
Input Capacitance2 20 pF max

REFERENCE INPUTS2 1.2 V min

VREF Input Voltage Range VDD V max
±3 µA max
Input Leakage Current 20 pF max
Input Capacitance
ON-CHIP REFERENCE Reference Error ± 2.5 % max ppm/°C
Temperature Coefficient 50 typ

LOGIC INPUTS2 2.4 V min V max V

VINH, Input High Voltage 0.8 min V max
VINL, Input Low Voltage 2 µA max
VINH, Input High Voltage 0.4 pF max
VINL, Input Low Voltage ±1
Input Current, IIN 8
Input Capacitance, CIN
LOGIC OUTPUTS 4 V min
Output High Voltage, VOH 2.4 V min

Output Low Voltage, VOL 0.4 V max

±1 µA max
High Impedance Leakage Current 15 pF max
High Impedance Capacitance

CONVERSION RATE Conversion time 2.3 µs max ns max

Track/Hold Acquisition Time1 200
Test Conditions/Comments
fIN = 30 kHz Any Channel, fSAMPLE = 350 kHz
VREF Internal or External
fa = 29 kHz, fb = 30 kHz fIN = 20 kHz

Any Channel

Nominal 2.5 V

VDD = 5 V ± 10% VDD = 5 V ± 10% VDD = 3 V ± 10% VDD =

3 V ± 10%
Typically 10 nA, VIN = 0 V to VDD

ISOURCE = 200 µA VDD = 5 V ± 10% VDD = 3 V ± 10% ISINK

= 200 µA