Beruflich Dokumente
Kultur Dokumente
DRAM cells
Ramon Canal
NCD - Master MIRI
WWL
RWL WWL
M3 RWL
M1 X X V DD 2 V T
M2
V DD
CS BL 1
BL 2 V DD 2 V T DV
RWL
M3
M2
WWL
M1
M1
X GND V DD 2 V T
CS
V DD
BL
V DD /2 V /2
sensing DD
CBL
V V(1)
BL
V PRE
D V(1)
V(0)
Sense amp activated t
Word line activated
M 1 word
line
Metal word line
SiO2
Poly
n+ n+ Field Oxide Diffused
bit line
Inversion layer
Poly
induced by Polysilicon Polysilicon
plate bias gate plate
Cross-section Layout
Cell Plate Si