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Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Very low profile - typical height of 0.95 mm
SlimSMATM • Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high
reliability and automotive requirement
• Ideal for automated placement
• Uni-directional only
Top View Bottom View
• Excellent clamping capability
DO-221AC • Peak pulse power: 600 W (10/1000 μs)
• AEC-Q101 qualified
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
PRIMARY CHARACTERISTICS - 8 kV (contact)
VBR 6.8 V to 51 V • Meets MSL level 1, per J-STD-020, LF maximum peak
VWM 5.8 V to 43.6 V of 260 °C
PPPM (10 x 1000 μs) 600 W • Material categorization: for definitions of compliance
PD at TM = 65 °C 6W please see www.vishay.com/doc?99912
TJ max. 185 °C
Polarity Uni-directional
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Package DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3_X - halogen-free, RoHS-compliant and
TYPICAL APPLICATIONS AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Use in sensitive electronics protection against voltage Terminals: Matte tin plated leads, solderable per
transients induced by inductive load switching and lighting J-STD-002 and JESD22-B102
on ICs, MOSFET, signal lines of sensor units for consumer, HM3 suffix meets JESD 201 class 2 whisker test
computer, industrial, and telecommunication. Polarity: Color band denotes cathode end
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2) Power dissipation mounted on infinite heat sink
(3) Power dissipation mounted on minimum recommended pad layout
Measured at Stand-off
Voltage, VWM
1 100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1 10
1 10 100 1000 10 000 1 10 100
100 7
Peak Pulse Power (PPP) or Current (IPP)
75
5
4
50
3
0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Power Dissipation Derating Curve
150 1000
TJ = 25 °C
Transient Thermal Impedance (°C/W)
IPPM - Peak Pulse Current (% IRSM)
50 10
td = 1000 μs
td
0 1
0 1.0 2.0 3.0 4.0
0.01 0.1 1 10 100 1000
DO-221AC (SlimSMA)
Cathode Band
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