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FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.052 Ω
Lower Input Capacitance ID = 28 A
Improved Gate Charge
Extended Safe Operating Area
Ο
175 C Operating Temperature
TO-220
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 Ω (Typ.) 1
2
3
Thermal Resistance
Symbol Characteristic Typ. Max. Units
R θJC Junction-to-Case -- 1.4
R θCS Case-to-Sink 0.5 -- Ο
C /W
R θJA Junction-to-Ambient -- 62.5
Rev. B
Notes ;
O Repetitive Rating : Pulse Width Limited by Maximum Junction
1 Temperature
L=1mH, I AS=28A, V DD=25V, R G=27 Ω, Starting T J =25 C
o
O2
O3 ISD <_ 28A, di/dt <_ 400A/ µs, V DD<_ BVDSS , Starting T J =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < _2%
O5 Essentially Independent of Operating Temperature
N-CHANNEL
POWER MOSFET IRF540A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
102 102
VGS
Top : 15V
[A]
[A]
10 V
8.0 V
7.0 V
ID , Drain Current
ID , Drain Current
6.0 V
5.5 V 175 oC
5.0 V
Bottom : 4.5 V
101
101
25 oC
@ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
- 55 oC
1. 250 µs Pulse Test
3. 250 µs Pulse Test
100 2. TC = 25 oC
100
10-1 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
[A]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
Drain-Source On-Resistance
0.08
102
IDR , Reverse Drain Current
0.06 VGS = 10 V
RDS(on) , [Ω]
0.04 101
VGS = 20 V
0.02
@ Notes :
175 oC
1. VGS = 0 V
@ Note : TJ = 25 oC 25 oC 2. 250 µs Pulse Test
0.00 100
0 30 60 90 120 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
ID , Drain Current [A] VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
2500
[V]
C iss VDS = 50 V
VDS = 80 V
Capacitance
1500
C oss
1000 5
@ Notes :
1. VGS = 0 V
C rss 2. f = 1 MHz
500
@ Notes : ID =28.0 A
00 0
10 101 0 10 20 30 40 50 60 70
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
N-CHANNEL
IRF540A POWER MOSFET
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
BVDSS , (Normalized)
RDS(on) , (Normalized)
2.5
1.1
2.0
1.0 1.5
1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 µA 2. ID = 14.0 A
0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
103 30
[A]
[A]
ID , Drain Current
102 10 µs
100 µs 20
1 ms
10 ms
101 15
DC
10
@ Notes :
100
1. TC = 25 oC
5
2. TJ = 175 oC
3. Single Pulse
10-1 0
100 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [ oC]
100
D=0.5
@ Notes :
0.2
1. Zθ J C (t)=1.4 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1
3. TJ M -TC =PD M *Zθ J C (t)
10- 1
0.05
PDM
Z JC(t) ,
0.02
0.01 single pulse t1
t2
θ
10- 2
10- 5 10- 4 10- 3 10- 2 10- 1 100 101
t 1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET IRF540A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
50K Ω as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
R1 R2
RL
Vout Vout
90%
Vin VDD
( 0.5 rated V DS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off
RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
N-CHANNEL
IRF540A POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
--
IS
L
Driver
VGS
RG Same Type
as DUT VDD
IRM
Vf VDD
Body Diode
Forward Voltage Drop
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In Design product development. Specifications may change in
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