Beruflich Dokumente
Kultur Dokumente
EE 171
Amplitude
Description Application Example Circuit
Modulator
Special PN-junction diode with an I (intrinsic) layer
between the P and N sections. The P and N layers
are usually silicon, although GaAs is sometimes
Microwave
used.
Circuit
Acts as PN junction diode at frequencies below 100
Pin Diode Tee
MHz and acts as a variable resistor or as a switch at
Configuration
higher frequencies.
Circuit
During Zero/Reverse biasing, it acts like a high
value of resistance while during forward bias, the
diode resistance drop to a very low level.
The input voltage’s rate-of-change with respect to
time is directly proportional to the voltage output. Amplitude
Resultant circuit can be made to either “Add” or Modulator
“Subtract” the voltages applied to their respective Op Amp
Differential
inputs. Follower
Amplifier
Uses a bridge circuit. Non-inverting
Make excellent amplitude modulators because they Amplifier
have a high gain and good linearity and can be 100
percent modulated.
High-level modulator circuit.
The output stage of the transmitter is a high-power
class C amplifier.
Amplifies low level modulating signal to a high
power level. AM
Collector
Modulator Voltage is applied in the collector circuit of tuned Modulation
class C amplifier in push pull arrangement. It has
the merits of high linearity of modulation, high
collector circuit efficiency and high power output
per transistor.
Transistorized version of a collector modulator in
which a transistor is used to replace the
transformer.
Eliminates the need for a large, heavy, and
expensive transformer, and considerably improves High power
Series Modulator
frequency response. AM
Very inefficient because the emitter-follower
modulator must dissipate as much power as the
class C RF amplifier.