Power Transistors

2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification Unit: mm
4.6±0.2
Complementary to 2SD2374 and 2SD2374A 9.9±0.3 2.9±0.2

3.0±0.5
■ Features
φ 3.2±0.1
• High forward current transfer ratio hFE which has satisfactory

15.0±0.5
linearity
• Low collector to emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one

4.2±0.2
screw 1.4±0.2
2.6±0.1
1.6±0.2
■ Absolute Maximum Ratings TC = 25°C

13.7±0.2

Solder Dip
0.8±0.1 0.55±0.15
Parameter Symbol Rating Unit
Collector to base 2SB1548 VCBO −60 V
2.54±0.30
voltage 2SB1548A −80 5.08±0.50

Collector to 2SB1548 VCEO −60 V 1 2 3

1 : Base
emitter voltage 2SB1548A −80 2 : Collector
3 : Emitter
Emitter to base voltage VEBO −5 V TO-220D-A1 Package
Peak collector current ICP −5 A
Collector current IC −3 A
Collector power TC = 25°C PC 25 W
dissipation Ta = 25°C 2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff 2SB1548 ICES VCE = −60 V, VBE = 0 −200 µA
current 2SB1548A VCE = −80 V, VBE = 0 −200
Collector cutoff 2SB1548 ICEO VCE = −30 V, IB = 0 −300 µA
current 2SB1548A VCE = −60 V, IB = 0 −300
Emitter cutoff current IEBO VEB = −5 V, IC = 0 −1 mA
Collector to emitter 2SB1548 VCEO IC = −30 mA, IB = 0 −60 V
voltage 2SB1548A −80
Forward current transfer ratio hFE1 * VCE = −4 V, IC = −1 A 70 250
hFE2 VCE = −4 V, IC = −3 A 10
Base to emitter voltage VBE VCE = −4 V, IC = −3 A −1.8 V
Collector to emitter saturation voltage VCE(sat) IC = −3 A, IB = − 0.375 A −1.2 V
Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz
Turn-on time ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs
Storage time tstg 1.2 µs
Fall time tf 0.3 µs
Note) *: Rank classification
Rank Q P Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
hFE1 70 to 150 120 to 250

156
Power Transistors 2SB1548, 2SB1548A

PC  T a IC  VCE IC  VBE
40 –6 –8
TC=25˚C VCE=–4V
(1) TC=Ta TC=25˚C
36
Collector power dissipation PC (W)

(2) Without heat sink (PC=2W) –7

–5
32

Collector current IC (A)

Collector current IC (A)

–6
28 IB=–100mA
(1) –4
–80mA –5
24
–60mA
20 –3 –4
–40mA
16 –30mA
–3
–2 –20mA
12
–16mA –2
8 –12mA
–1
–8mA –1
4
(2) –4mA
0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I C
–10 10000 1000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=–4V VCE=–10V

TC=25˚C TC=25˚C f=10MHz
Forward current transfer ratio hFE

–3 3000 300 TC=25˚C

Transition frequency fT (MHz)

–1 1000 100

– 0.3 300 30

– 0.1 100 10

– 0.03 30 3

– 0.01 10 1

– 0.003 3 0.3

– 0.001 1 0.1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t)  t

–100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 80 × t2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

–30
102 (1)
Collector current IC (A)

–10
ICP
(2)
–3 t=1ms 10
IC
DC 10ms
–1

1
– 0.3

– 0.1
10–1
– 0.03

– 0.01 10–2
–1 –3 –10 –30 –100 –300 –1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)

157
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2001 MAR