Data Sheet

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by MJH11017/D
SEMICONDUCTOR TECHNICAL DATA

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. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.

• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Low Collector–Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction

ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
*Motorola Preferred Device
MJH
11018 11020 11022
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
15 AMPERE
Rating Symbol 11017 11019 11021 Unit
DARLINGTON
Collector–Emitter Voltage VCEO 150 200 250 Vdc COMPLEMENTARY SILICON
Collector–Base Voltage VCB 150 200 250 Vdc POWER TRANSISTORS
150, 200, 250 VOLTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc
150 WATTS
Collector Current — Continuous IC 15 Adc
— Peak (1) 30
Base Current IB 0.5 Adc
Total Device Dissipation @ TC = 25_C PD 150 Watts
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Derate Above 25_C 1.2 W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v ÎÎÎÎÎÎÎÎÎ
Thermal Resistance. Junction to Case
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
RθJC
10%.
0.83 _C/W
CASE 340D–01
160
140
PD, POWER DISSIPATION (WATTS)
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎ
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc
(IC = 0.1 Adc, IB = 0) MJH11017, MJH11018 150 —
MJH11019, MJH11020 200 —
MJH11021, MJH11022 250 —
Collector Cutoff Current ICEO mAdc
(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018 — 1.0
(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020
— 1.0
(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022 — 1.0
Collector Cutoff Current ICEV mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
(VCE = Rated VCB, VBE(off) = 1.5 Vdc) — 0.5
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
— 5.0
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) IEBO — 2.0 mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE 400 15,000 —
DC Current Gain (IC = 15 Adc, VCE = 5.0 Vdc) 100 —
Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) VCE(sat) — 2.5 Vdc
Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) — 4.0
Base–Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) VBE(on) — 2.8 Vdc
Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) — 3.8 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product fT 3.0 — —
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎ
Output Capacitance MJH11018, MJH11020, MJH11022 Cob — 400 pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021 — 600
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ
Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 75 — —
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
Typical
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol NPN PNP Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time td 150 75 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time (VCC = 100 V, IC = 10 A, IB = 100 mA tr 1.2 0.5 µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ µs

Storage Time VBE(off) = 5.0 V) (See Figure 2) ts 4.4 2.7
Fall Time
v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
tf 2.5 2.5 µs
VCC
100 V
RC SCOPE
TUT
RB & RC varied to obtain desired current levels V2 RB
D1, must be fast recovery types, e.g.: APPROX
1N5825 used above IB ≈ 100 mA +12 V
MSD6100 used below IB ≈ 100 mA 0 51 D1
V1
APPROX
+ 4.0 V
– 8.0 V 25 µs
For td and tr, D1 is disconnected
and V2 = 0
tr, tf ≤ 10 ns
Duty Cycle = 1.0% For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
2 Motorola Bipolar Power Transistor Device Data

1.0
0.7 D = 0.5
r(t), EFFECTIVE TRANSIENT THERMAL 0.5
RESISTANCE (NORMALIZED)
0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RθJC(t) = r(t) RθJC
0.07 RθJC = 0.83°C/W MAX
0.02 D CURVES APPLY FOR POWER
0.05
PULSE TRAIN SHOWN t1
0.03 0.01 READ TIME AT t1 t2
0.02 SINGLE PULSE TJ(pk) – TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 3. Thermal Response
FORWARD BIAS
TC = 25°C SINGLE PULSE
IC, COLLECTOR CURRENT (AMPS)
30 0.1 ms There are two limitations on the power handling ability of a

20 transistor: average junction temperature and second break-
10 0.5 ms down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
5.0 1.0 ms
i.e., the transistor must not be subjected to greater dissipa-
5.0 ms tion than the curves indicate.
2.0 dc
WIRE BOND LIMIT The data of Figure 4 is based on T J(pk) = 150_C; TC is
1.0 THERMAL LIMIT variable depending on conditions. Second breakdown pulse
0.5 SECOND BREAKDOWN LIMIT limits are valid for duty cycles to 10% provided T J(pk)
0.2
MJH11017, MJH11018
MJH11019, MJH11020 v 150 _ C. T J(pk) may be calculated from the data in
MJH11021, MJH11022 Figure 3. At high case temperatures, thermal limitations will
0 reduce the power that can be handled to values less than the
2.0 3.0 5.0 10 20 30 50 100 150 250
limitations imposed by second breakdown.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)
30 REVERSE BIAS
IC, COLLECTOR CURRENT (AMPS)
L = 200 µH For inductive loads, high voltage and high current must be
IC/IB1 ≥ 50 sustained simultaneously during turn–off, in most cases, with
TC = 100°C the base to emitter junction reverse biased. Under these
20
VBE(off) = 0 – 5.0 V conditions the collector voltage must be held to a safe level
RBE = 47 Ω at or below a specific value of collector current. This can be
DUTY CYCLE = 10% accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
10 devices is specified as Reverse Bias Safe Operating Area
MJH11017, MJH11018 and represents the voltage–current conditions during re-
MJH11019, MJH11020 verse biased turn–off. This rating is verified under clamped
MJH11021, MJH11022
conditions so that the device is never subjected to an ava-
0 lanche mode. Figure 5 gives RBSOA characteristics.
0 20 60 100 140 180 220 260
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)
Motorola Bipolar Power Transistor Device Data 3

PNP NPN
10,000 10,000
7000
VCE = 5.0 V VCE = 5.0 V
5000 5000
TC = 150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN

3000
2000 TC = 150°C 2000
1000 25°C 1000 25°C
500 500
– 55°C
200 – 55°C 200
100 100
0.2 0.3 0.5 0.7 1.0 3.0 5.0 10 15 0.2 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 15
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
PNP NPN
4.5 4.5
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

4.0 TJ = 25°C TJ = 25°C
4.0
3.5 3.5
3.0 3.0
IC = 15 A
2.5 2.5
IC = 15 A
2.0 2.0
IC = 10 A
1.5 IC = 10 A
1.5
IC = 5.0 A IC = 5.0 A
1.0 1.0
1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP NPN
4.0 4.0
3.5 TJ = 25°C 3.5 TJ = 25°C
3.0 3.0
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
2.5 2.5
2.0 VBE(sat) @ IC/IB = 100 2.0 VBE(sat) @ IC/IB = 100
1.5 1.5
VBE @ VCE = 5.0 V VBE @ VCE = 5.0 V
1.0 1.0
VCE(sat) @ IC/IB = 100 VCE(sat) @ IC/IB = 100
0.5 0.5
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.5 0.7 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages

PNP NPN
MJH11017 COLLECTOR MJH11018 COLLECTOR

MJH11019 MJH11020
MJH11021 MJH11022
BASE BASE
EMITTER EMITTER
Figure 9. Darlington Schematic
Motorola Bipolar Power Transistor Device Data 5

PACKAGE DIMENSIONS
C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
U 4 DIM MIN MAX MIN MAX
A 19.00 19.60 0.749 0.771
A B 14.00 14.50 0.551 0.570
L C 4.20 4.70 0.165 0.185
S D 1.00 1.30 0.040 0.051
1 2 3 E 1.45 1.65 0.058 0.064
K G 5.21 5.72 0.206 0.225
H 2.60 3.00 0.103 0.118
J 0.40 0.60 0.016 0.023
K 28.50 32.00 1.123 1.259
L 14.70 15.30 0.579 0.602
Q 4.00 4.25 0.158 0.167
S 17.50 18.10 0.689 0.712
U 3.40 3.80 0.134 0.149
V 1.50 2.00 0.060 0.078
D J STYLE 1:
V H PIN 1. BASE
2. COLLECTOR
G 3. EMITTER
4. COLLECTOR
CASE 340D–01
SOT 93, TO–218 TYPE
ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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*MJH11017/D*
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Figure 1. Power Derating

 Motorola, Inc. 1995 1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ µs

Figure 2. Switching Times Test Circuit

2 Motorola Bipolar Power Transistor Device Data

Figure 3. Thermal Response

30 0.1 ms There are two limitations on the power handling ability of a

Figure 4. Maximum Rated Forward Bias

Figure 5. Maximum Rated Reverse Bias

Motorola Bipolar Power Transistor Device Data 3

hFE, DC CURRENT GAIN

1000 25°C 1000 25°C

Figure 6. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Saturation Region

3.5 TJ = 25°C 3.5 TJ = 25°C

2.0 VBE(sat) @ IC/IB = 100 2.0 VBE(sat) @ IC/IB = 100

Figure 8. “On” Voltages

4 Motorola Bipolar Power Transistor Device Data

MJH11017 COLLECTOR MJH11018 COLLECTOR

Figure 9. Darlington Schematic

Motorola Bipolar Power Transistor Device Data 5

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6 Motorola Bipolar Power Transistor Device Data

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