Power F-MOS FETs

2SK3025 (Tentative)
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
unit: mm
● Low ON-resistance
● No secondary breakdown 6.5±0.1
2.3±0.1
● Low-voltage drive 5.3±0.1
4.35±0.1
● High electrostatic breakdown voltage 0.5±0.1

■ Applications

1.8±0.1
7.3±0.1
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor

1.0±0.2
1.0±0.1
● Control equipment

2.5±0.1
0.1±0.05
0.93±0.1
● Switching power supply

0.8max
0.5±0.1

■ Absolute Maximum Ratings (TC = 25°C) 2.3±0.1

0.75±0.1

Parameter Symbol Ratings Unit 4.6±0.1

Drain to Source breakdown voltage VDSS 60 V

Gate to Source voltage VGSS ±20 V
1: Gate
DC ID ±30 A 1 2 3 2: Drain
Drain current
Pulse IDP ±60 A 3: Source
U Type Package
Avalanche energy capacity EAS* 45 mJ
Allowable power TC = 25°C 20 Internal Connection
PD W D
dissipation Ta = 25°C 1
G
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
* L = 0.1mH, IL = 30A, 1 pulse S

■ Electrical Characteristics (TC = 25°C)

Parameter Symbol Conditions min typ max Unit
Drain to Source cut-off current IDSS VDS = 50V, VGS = 0 10 µA
Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 ±10 µA
Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 60 V
Gate threshold voltage Vth VDS = 10V, ID = 1mA 1 2.5 V
RDS(on)1 VGS = 10V, ID = 15A 25 40 mΩ
Drain to Source ON-resistance
RDS(on)2 VGS = 4V, ID = 15A 35 55 mΩ
Forward transfer admittance | Yfs | VDS = 10V, ID = 15A 9 18 S
Diode forward voltage VDSF IDR = 15A, VGS = 0 −1.5 V
Input capacitance (Common Source) Ciss 1200 pF
Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz 400 pF
Reverse transfer capacitance (Common Source) Crss 200 pF
Turn-on time (delay time) td(on) 10 ns
Rise time tr VDD = 30V, ID = 15A 20 ns
Fall time tf VGS = 10V, RL = 2Ω 140 ns
Turn-off time (delay time) td(off) 350 ns
Thermal resistance between channel and case Rth(ch-c) 6.25 °C/W
Thermal resistance between channel and atmosphere Rth(ch-a) 125 °C/W