Philadelphia SMTA Philly Rev2

Root-Cause Failure Analysis of Electronics
Bhanu Sood
Test Services and Failure Analysis (TSFA) Laboratory
Center for Advanced Life Cycle Engineering (CALCE)
University of Maryland
College Park, MD 20742
SMTA Philadelphia, March 14, 2013

Center for Advanced Life Cycle Engineering 1 bpsood@calce.umd.edu University of Maryland
301-405-3498 Copyright © 2013
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intended to be used for educational purposes only. Individual presenters, their respective
organizations and Center for Advanced Life Cycle Engineering (CALCE) disclaim any
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outside of its educational purpose.
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The information contained within this packet has been compiled by the
University of Maryland, CALCE
Replication rights of all information is retained by individual presenters, their respective

organizations and CALCE.
Copyright © 2013 CALCE and the University of Maryland. All rights reserved.
What are the Biggest Headaches? Where there are Failures… There Are Costs . . .
• CALCE Laboratory Services • Costs to the Manufacturer
reviewed 150 root-cause
Other Sites 7% o Time-to-market can increase
analyses of failures during Interconnects/
Connectors 3%
qualification or at a customer Solder Joints 13% o Warranty costs can increase
site o Market share can decrease. Failures can stain the
– Representative of over 80 reputation of a company, and deter new customers.
different companies. o Claims for damages caused by product failure can increase
• These failures were Capacitors 30%
categorized by failure site • Costs to the Customer

– PCB and capacitor issues o Personal injury
accounted for over 50% of PEM 21%
o Loss of mission, service or capacity
Printed Board 26%
these failures.
o Cost of repair or replacement
o Indirect costs, such as increase in insurance, damage to
reputation, loss of market share
Center for Advanced Life Cycle Engineering 2 bpsood@calce.umd.edu University of Maryland Center for Advanced Life Cycle Engineering 3 bpsood@calce.umd.edu University of Maryland
301-405-3498 Copyright © 2013 301-405-3498 Copyright © 2013
What is the Cost of Failure?* Outline

Type of Business Lost Revenue per Hour
Retail Brokerages $6,450,000

• Definitions
Credit Card Sales Authorization $2,600,000 • Root cause failure analysis
Home Shopping Channels $113,750
– RCA Steps
Catalog Sales Centers $90,000
Airline Reservation Centers $89,500 • Case Studies
Cellular Service Activations $41,000
Package Shipping Services $28,250
• Closing remarks
Online Network Connect Fees $22,250
ATM Service Fees $14,500
Supermarkets $10,000
* - 1999 dollars
Failure Definitions
Failure A product no longer performs the function for which it
was intended
Failure Mode The effect by which a failure is observed.
Failure Site The location of the failure.
Failure Analysis Failure Mechanism The physical, chemical, thermodynamic or other process
that results in failure.
Failure Model Quantitative relationship between lifetime or probability

of failure and loads
Load Application/environmental condition needed (electrical,

thermal, mechanical, chemical...) to precipitate a failure
mechanism.
Classification of Failures Failure Mechanism Identification
• It is helpful to distinguish between two key classes of

failure mechanism: Overstress Mechanisms Wearout Mechanisms
– overstress: use conditions exceed strength of materials; often Fatigue,
sudden and catastrophic Yield, Fracture, Mechanical Creep, Wear
Mechanical Interfacial de-adhesion
– wearout: accumulation of damage with extended usage or repeated Stress driven diffusion
stress Glass transition (Tg) Thermal voiding (SDDV)
Thermal Phase transition
• It is also helpful to recognize early life failures: TDDB, Electromigration,
Surface charge
Dielectric breakdown,
– infant mortality: failures occurring early in expected life; should be
Electrical Electrical overstress, Electrical spreading, Hot electrons,
CAF, Slow trapping
eliminated through process control, part selection and Electrostatic discharge,
Second breakdown
management, and quality improvement procedures Radiation embrittlement,
Radiation Charge trapping in
Radiation Single event upset oxides
Corrosion,
Dendrite growth,
Chemical
Chemical Contamination Depolymerization,
Intermetallic Growth
What Causes Products to Fail? What is Root Cause Analysis?
• Generally, failures do not “just happen.” Root Cause analysis has four major objectives:
• Failures may arise during any of the following stages of a • Verify that a failure occurred;
product’s life cycle: • Determine the symptom or the apparent way a part has failed
(the mode);
• Determine the mechanism and root cause of the failure;
• Recommend corrective and preventative action.
While generally synonymous, “Failure analysis” is

commonly understood to include all of this except
determination of root cause.
The damage (failure mode) may not be detected until a later
phase of the life cycle.
Root Cause Analysis is

What is a Root Cause
Different from Troubleshooting
The root cause is the most basic causal factor or factors • Troubleshooting is generally employed to
that, if corrected or removed, will prevent the eliminate a symptom in a given product, or to
recurrence of the situation.* identify a failed component in order to effect a
repair.
The purpose of determining the root cause (s) is to fix the
problem at its most basic source so it doesn’t occur again, • Root cause analysis is dedicated to finding the
even in other products, as opposed to merely fixing a fundamental reason why the problem occurred in
failure symptom. Identifying root causes is the key to the first place, to prevent future failures.
preventing similar occurrences in the future.
* ABS Group, Inc., Root Cause Analysis Handbook, A Guide to Effective

Incident Investigation, ABS Group, Inc., Risk & Reliability Division,
Rockville, MD, 1999.
From Symptoms to Root Causes Root Cause Analysis
• Root cause analysis is a methodology designed to help:
• Symptoms are manifestations of a problem; signs indicating
that a failure exists.
– Example: a symptom of printed circuit board failure could be the 1) Describe WHAT happened during a particular occurrence,
measurement of open circuits after fabrication. 2) Determine HOW it happened, and
3) Understand WHY it happened.
• An apparent cause (or immediately visible cause)
is the superficial reason for the failure.
– Example: the apparent cause of open circuits could be that traces • Only when one is able to determine WHY an event or failure
have discontinuities which result in open circuits. occurred, will one be able to determine corrective measures, and
over time, the root causes identified can be used to target major
• Root Cause is the most basic casual factor(s). opportunities for improvement.
– Example: the root cause could arise during the manufacturing
process if the circuit boards are stacked improperly, resulting in
scratches to circuit traces. Another possible root cause could be the • Uncovering ROOT CAUSE may require 7 iterations of “Why?”
presence of contaminants during the copper trace etching process,
which resulted in discontinuities in the traces.
Root Cause Analysis Process A Cause and Effect Diagram

Preplanning: Establish Root Cause Culture with Management Support and Responsibilities - Electrostatic Discharge in a Semiconductor Device -
 Policy/procedures for notification  Trained investigation team  Hypothesization Tools
 Classification system  Analysis procedures  Risk Analysis WAFER PRODUCTION
ENVIRONMENT TOOLS
The Footwear Layout Brushes Blowers
Incident!
People Floors
Work Equipment
Clothes Type Ovens Material
Alert / Notification : Begin Investigation Area Spray
Grounding Die
 Secure evidence (data collection) Air Tools
Tools Carriers
 Assess immediate cause(s) Flow Furniture Energy
 Interview witnesses Packaged
Materials Sources
Temperature Wafer
Systems
Hypothesize causes using tools such as Ishikawa (fishbone) diagram, and failure modes, mechanisms, Humidity Friction
and effects analysis (FMMEA) Handling ELECTROSTATIC
Scaling Discipline
DISCHARGE
Analyze and Interpret Evidence
Review documents and Conduct physical Validate Geometry Handling
procedures, and check evaluation hypotheses CDs Training Commitment
against standards (core of the FA process) Protective Management
Structures
Process Problem
Recognition
Identify Root Cause (s) Testing Assembly
Shape Lead
Frame Wafer
Identify Restart Criteria Material
Package Processing
Implement Corrective Conduct a Follow-up Audit, Size
Confirm Effectiveness, then Electrical
Develop Corrective Actions Actions and/or Document
Resolutions Critique and Modify Process DESIGN Properties MANUFACTURING
A Cause and Effect Diagram
- PCBA Delamination - General Approach Used for Failure Analysis
Assembly Process/Method
time
• The overriding principle of failure analysis is to start with the
Pressure
Material
Epoxy Resin
Temperature System
Temp
Curing
Stacking up
Hardener
least destructive methods and progress to increasingly more
time Method Accelerator
Warpage
Binder
Pre-preg
destructive techniques.
Blank
Humidity
• The potential for a nominally non-destructive technique to
Bow & Twist
Metallization Copper Sheet
Booking time Reinforce
alloy
temperature
method Material
Solder
Dimensions
cause irreversible changes should not be underestimated.
Reflow mask Properties
profile
No. of passes
Wave
Solder Quality
CTE – For example, the simple act of handling a sample, or measuring a
Cooling Rate
Profile
Delamination
resistance, can cause permanent changes that could complicate
Working Instructions
Warpage
Specs
analysis further down the line.
Pre-preg
OJT
Life
• Each sample and failure incidence may require a unique
Stack up
Ability Handling
Cycle
Sequence sequence of steps for failure analysis. The process demands
Operating Assembly
Certification
Knowledge Conditions Process an open mind, attention to detail, and a methodical approach.
Copper
Epoxy/Resin
Thickness
System
Training
No. of layers
Man
Design
Example of Failure Analysis Process Flow

Occurrence of
Non-Destructive Testing (NDT)
Failure
Preservation of Failure
Investigation of Failure
• Visual Inspection
• Optical Microscopy
Occurrence Circumstances
Non-Destructive Analysis
• X-ray imaging
of Failure
Intermittent
• X-ray Fluorescence Spectroscopy

Electrical Test/
Verification of Failure/
Classification of Failure Mode
Reliability Test/
Simulation of
Failure Circumstances
Deprocessing (Destructive In-Circuit Evaluation

• Acoustic microscopy
Physical Analysis
• Hermeticity
Identification of Failure Site
Physical Analysis
Hypothesis of
Failure Mechanism
Verification &
Root Cause Determination Corrective Action
Documentation
External Inspection Electrical Testing
• Electrical characteristics/performance
• Visual inspection of external condition
– differences from good samples
• DC test
• Detailed inspection: appearance, composition, • Parametrics (current-voltage characteristic)
damage, contamination, migration, abnormalities • Simulated usage conditions
– Low power microscope • Electrical probing
– High power microscope
– Scanning electron microscope
– Surface chemical analysis
Deprocessing:
Fault Isolation
Destructive Physical Analysis (DPA)
• Electrical Probing • Modification of specimen in order to reveal
• Time Domain Reflectometry (TDR) internal structures and analyze failure site. May
• Electron Beam Testing involve:
– electron beam induced current (EBIC), – Cross-sectioning and metallography
– voltage contrast (VC), – Decapsulation or delidding
– cathodoluminescence (CL) – Residual Gas Analysis for internal gases
• Emission Microscopy
• Scanning Probe Microscopy
• Thermal Analysis
Physical Analysis of Failure Site Root Cause Identification
Visual and
Electrical Scanning Decapsulation Destructive • Testing may be needed to determine the effect of
light Mechanical
microscope
testing of acoustic then optical cross-
testing of hypothesized factors on the failure.
component microscope microscope section,
examination internal
of part
and and X-ray E-SEM, VC, E-SEM, and
components • A design of experiment (DoE) approach is recommended
connector radiograph and EBIC EDS
to incorporate critical parameters and to minimize the
number of tests.
Corrosion Wire fatigue
of leads
Shorts Package
delamination
Intermetallic
growth
Wire pull • This experimentation can validate a hypothesized root
Die cracking cause.
Part
Opens
deformation Corrosion Solder joint
Package cracking cracking and Bond shear
SDDV and coarsening
Package cracks Parametric shifts electromigration
Die cracking
or bond lift Part
Damaged Wire sweep
Contact resistance delamination Die shear
solder joints broken wire EOS/ESD and cracking
Introduction
• Failures in a 480 Volt rectifier assembly were reported.
Unit was removed from a field location. This assembly
suffered catastrophic damage to secondary side,
Electrical Shorting on a 480V Rectifier including damage to solder mask, pin damage and
potential board damage.
Assembly Used in an Uncontrolled
• CALCE inspected one failed and one non-failed fielded
Ambient Environments assembly to determine the cause of failure. Steps in the
analysis:
– Visual/optical inspection
– Radiological inspection
– Environmental Scanning Electron Microscopy (ESEM) and
Energy Dispersive Spectroscopy (EDS)
Visual Inspection – Failed and Non-Failed Assemblies
Visual Inspection
FORMEX GK-10 insulation Failed Fielded Assembly
10mm Connector PTHs

PTH: Plated Through Hole
PCB: Printed Circuit Board
10mm
Non-failed Fielded Assembly
Failed Assembly – Secondary Inside Failed Fielded Assembly - Outside
PCB
Connector
Insulator
Chassis
Optical Inspection – Failed Assembly Failed Fielded Assembly OVHM Failed Fielded Assembly OVHM
(Secondary Side of PCB)
20mm
Non-Failed OVHM Non-Failed OVHM
OVHM: Oblique view high mag

E-SEM/EDS Inspection Inspection of Regions Close to Washers
Region 1
Failed
Region 2
Region 1 A
A B
Si Si
Region 2
Cu Cu • Washer from the marked region was removed and inspected
Sn Sn under low power stereo microscope. The PCBs/solder mask was
Pb Pb also inspected optically.
O O B • Corresponding washer from the non-failed board was also
Ca inspected.
Mn • The washers and PCBs were also inspected in ESEM and EDS.
Optical Images – PCB/Solder Mask Failed ESEM Images of Washers

Failed Failed
Non-failed Non-failed Non-Failed
Summary and Conclusions
EDS Elemental Analysis of Washers
• Region under the washer on the failed assembly contains residues that appear to
Failed adhere to the solder mask.
ESEM Image Ca Zn – These residues appear to be in the form of islands around the PCB through-hole.
– Similar region on the non-failed assembly did not contain the whitish residues.
Debris observed on non-failed assembly appears to originate from the PCB through
hole (glass fiber and resin debris).
• Particulate contaminant (and
moisture) may have trapped
between the inner side of FORMEX
GK-10 and secondary side of PCB
Fe O Si – Created low impedance paths
across pin pairs on the secondary
side of the board.
• Energizing the circuit, without
removal or disrupting these low
impedance paths may have caused a
Presence of calcium suggests presence of same debris material that was catastrophic failure on the
observed in other areas throughout the secondary surface. secondary side.
Introduction
• Schottky diodes are reported to be exhibiting electrical shorts in field. CALCE
conducted the analysis on some failed (in field applications) and as-received
(from customer stock).
• Peak voltage is between 120V and 130V varying with load conditions. Diodes
experience peak currents of 90A.
• Approach
– Radiographic inspection (X-ray)
Failure Analysis of Schottky Diodes in – Dye penetrant testing of diodes from failed and non-failed assemblies
D-67 Package – Chemical and mechanical decapsulation of selected samples
– Optical inspection of decapsulated package
– Environmental scanning electron microscopy (ESEM)
– Energy dispersive spectroscopy (EDS) analysis for elemental identification of
materials.
1 cm
Construction Analysis - I Construction Analysis - II
Attach Metal Connector
Solder
Cross-section of
the Schottky Solder
Die
Metal Clip
Disc between clip and die
diode assembly Mo Disc
Disc
top, attached with solder Solder
under die
• Attach Die
materials Solder
Heat spreader
• Die Mo Disc
Chemically decapsulated Schottky diode Chemically decapsulated Schottky diode
• Metal
Parts are chemically decapsulated using the process: components Copper Heat Sink
1. Physically remove sleeve
2. Immerse part in a beaker with 98% H2SO4, placed over 320°C hot plate
3. Repeatedly rinse and re-immerse until molding compound is removed
X-ray Inspection Failed Sample Diode Investigation – IR Imaging

Stock diode Failed diode
Localized Hotspots (IR Imaging)
Damaged to the diode was observed with x-ray inspection Localized Hotspot (IR Imaging)
Delamination at Die/EMC Interface Construction Review – Stock Sample
Delamination
EDS elemental analysis

shows the material is
Die composed of Silver.
Delamination
• Four dies in the package, die size is 5mm × 5mm.

• Fiducials are seen on 3 dies, under the molding compound (arrows).
• Fiducials are Silver, as seen with EDS elemental analysis.
Distance from Die Edge - Fiducial Non-failed Diode Assembly – Dye Penetrant
Inspection
62µm 60µm Extent of dye
60µm penetration
61µm
61µm
• After immersing and drying the diodes from non-failed assembly, the molding was
pried open.
• Optical inspection revealed dye penetration under the molding compound.
• In the image on the right, the dye is seen to reach the edge of on one of the four dies.
Fiducials are approximately 60µm from edge of the die
Conclusions
• Given the presence of Silver on the samples,
either as fiducial or as die surface coating, there
is an available source within the package for
silver migration. Failure Analysis of Multilayer
• In addition to presence of silver, a migration Ceramic Capacitor (MLCC) with
process will also be accelerated by the following: Low Insulation Resistance
1.Creation of a path by delamination between die edge and
molding compound – dye penetrant test provided indication of
poor contact between molding compound and heat spreader,
thus creating a path for moisture ingress, other paths may exist,
and further investigation is required
2.Absorption of moisture by the molding compound.
Loading Conditions:
MLCC Construction
Temperature-Humidity-Bias
• Ceramic Dielectric • A Temperature-Humidity-Bias
– Typically comprised of compounds made with
(THB) test was performed for
titanium oxides
 BaTiO3 (“X7R”) for this study 1766 hours at 85°C and 85% RH,
• Electrodes at the rated voltage of 50V.
– Base metal consisting of nickel (BME) • Capacitance, Dissipation Factor Data Acquisition,
 Precious metal consisting of silver/ palladium (DF) and Insulation Resistance Temp.
(PME) Ref: Kemet (IR) were monitored during the LCR Meter: C, DF
• End Termination test.
– Standard termination consists of silver or High Resistance Meter: IR
copper coated with nickel and tin • A 1 MΩ resistor was placed in
 Flexible termination consists of a silver filled series with each of the MLCCs.
polymer coated with nickel and tin • The MLCCs were size 1812 and
soldered to an FR-4 printed
circuit board using eutectic tin-
lead solder.
IR Test Data for Failed THB Failure Analysis Methodology for Biased MLCCs
Flexible Termination MLCCs
1.0E+09
OHM
1.0E+08
Insulation Resistance (Ohms)
Cap 24
Cap 26
1.0E+07 • A Buehler MPC 2000 (with 9 micron lapping
Cap 62
film) was used to cross-section the MLCC.
Cap 66
• The MLCC (on a PCB) was mounted to a
fixture using wax.
1.0E+06 • Wires were soldered to the board, along with
a 1 kΩ series resistor.
• Resistance was monitored with a multimeter
as the sample was moved ~5 microns at a
1.0E+05 time while checking for a resistance change.
• Epoxy was added under the part to prevent
0 200 400 600 800 1000 1200 1400 1600 1800
buildup of metal debris, which could cause
Time (Hours) an inaccurate resistance value.
EDS Line Scan Showing Silver and

Metal Migration Between Electrodes Palladium in Area of the Metallic Bridge
100
Ag
45 µm Pd
80
electrode electrode
Counts
60
40 Background
Pd level of Ag
Ag
20
0
10 Distance [µm] 20 30
20 µm
SEM Image of Cross-section
Optical Micrographs of Cross-section
EDS Map Showing Silver Migration and
Failure Mechanism
Voiding in Ceramic
• Metal migration was found in several of the failed
MLCCs.
• Voids in the ceramic, without silver or palladium, were
also found close to the conduction path.
• The failure mechanism was electrochemical co-
migration of silver and palladium, aided by porosity in
the dielectric.
Restart Criteria Corrective Actions

• Failures with severe consequences (e.g., safety) may • Many of the failures having a direct impact on production
require processes (e.g., manufacturing, distribution) to be require immediate corrective actions that will minimize
interrupted after discovery of the failure. downtime.
• Although many immediate actions may correct symptoms,
• Depending upon the identified root cause, processes
– temporary solutions may not be financially justifiable over the “long
interrupted may be re-started if corrective action (s) can
haul”; and
be implemented that will prevent the recurrence of the
failure, or sufficiently minimize its impact. – there is a large risk that a temporary solution may not solve the
problem.
Verification Root Cause Analysis Report
The report should include the following information:
Verification of the corrective action includes: 1. Incident summary
2. History and conditions at the time of failure
• verifying the approval and implementation of the corrective
action; 3. Incident description
4. Cause evaluated and rationale
• verifying a reduction in the incidence of failures;
5. Immediate corrective actions
• verifying the absence of new failures associated with the 6. Causes and long-term corrective actions
failure sites, modes, and mechanisms identified during the
7. Lesson learned
failure analysis.
8. References and attachments
9. Investigating team description
10. Review and approval team description
11. Distribution list
Failures of a Failure Analysis Program Further Suggested Reading

• Journal of Failure Analysis and Prevention, ASM
• Shutting down the malfunctioning equipment International.
• Refusing to recognize that a failure can or does exist • Electronic Device Failure Analysis (EDFA) Journal, ASM
• Assuming an apparent cause to be the root cause International.
• Determining the failure cause by assumption • Engineering Failure Analysis, Elsevier.
• Electronic Failure Analysis Handbook, Perry L. Martin,
• Collecting insufficient information and ending an McGraw-Hill Professional.
analysis before it is complete
• Microelectronics Failure Analysis Desk Reference (Book +
• Discarding failed parts CD set) [Hardcover], EDFAS Desk Reference Committee.
• No documentation
CALCE Introduction CALCE Research Funding (over $6M): 2012
• Emerson Appliance Controls • Motorola • S.C. Johnson Wax
• Alcatel-Lucent
• Emerson Appliance Solutions • Mobile Digital Systems, Inc. • Sandia National Labs
• Aero Contol Systes
• Emerson Network Power • NASA • SanDisk
• Agilent Technologies
• The Center for Advanced Life Cycle Engineering (CALCE) •
•
American Competitiveness Inst.
Amkor
•
•
Emerson Process Management
Engent, Inc.
•
•
National Oilwell Varco
NAVAIR
•
•
Schlumberger
Schweitzer Engineering Labs
• Selex-SAS
formally started in 1984, as a NSF Center of Excellence in •
•
Arbitron
Arcelik
•
•
Ericsson AB
Essex Corporation
•
•
NetApp
nCode International •
•
Sensors for Medicine and Science
SiliconExpert
• Ethicon Endo-Surgery, Inc. • Nokia Siemens
systems reliability.
• ASC Capacitors
• Exponent, Inc. • Nortel Networks • Silicon Power
• ASE
• Fairchild Controls Corp. • Nordostschweizerische Kraftwerke • Space Systems Loral
• Astronautics
• Filtronic Comtek AG (NOK) • SolarEdge Technologies
• Atlantic Inertial Systems
• One of the world’s most advanced and comprehensive testing and •
•
AVI-Inc
Axsys Engineering
•
•
GE Healthcare
General Dynamics, AIS & Land Sys.
•
•
Northrop Grumman
NTSB
•
•
Starkey Laboratories, Inc
Sun Microsystems
failure analysis laboratories • General Motors • NXP Semiconductors • Symbol Technologies, Inc
• BAE Systems
• Guideline • Ortho-Clinical Diagnostics • SymCom
• Benchmark Electronics
• Hamlin Electronics Europe • Park Advanced Product Dev. • Team Corp
• Boeing
• Tech Film
• Funded at $6M by over 150 of the world’s leading companies •
•
Branson Ultrasonics
Brooks Instruments
•
•
Hamilton Sundstrand
Harris Corp
•
•
Penn State University
PEO Integrated Warfare •
•
Tekelec
Teradyne
• Buehler • Henkel Technologies • Petra Solar
• The Bergquist Company
• Supported by over 100 faculty, visiting scientists and research •
•
Capricorn Pharma
Cascade Engineering
•
•
Honda
Honeywell
•
•
Philips
Philips Lighting •
•
The M&T Company
The University of Michigan
• Celestical International • Howrey, LLP • Pole Zero Corporation
assistants •
•
Channel One International
Cisco Systems, Inc.
•
•
Intel
Instituto Nokia de Technologia
•
•
Pressure Biosciences
Qualmark
•
•
Tin Technology Inc.
TÜBİTAK Space Technologies
• Juniper Networks • Quanterion Solutions Inc • U.K. Ministry of Defence
• Crane Aerospace & Electronics
• Received NSF •
•
Curtiss-Wright Corp
CDI
•
•
Johnson and Johnson
Johns Hopkins University
•
•
Quinby & Rundle Law
Raytheon Company
•
•
U.S. Air Force Research Lab
U.S. AMSAA
• U.S. ARL
Innovation •
•
De Brauw Blackstone Westbroek
Dell Computer Corp.
•
•
Kimball Electronics
L-3 Communication Systems
•
•
Rendell Sales Company
Research in Motion •
•
U.S. Naval Surface Warfare Center
U.S. Army Picatinney/UTRS
• DMEA • LaBarge, Inc • Resin Designs LLC
Award and •
•
Dow Solar
DRS EW Network Systems, Inc.
•
•
Lansmont Corporation
Laird Technologies
•
•
RNT, Inc.
Roadtrack
•
•
U.S. Army RDECOM/ARDEC
Vectron International, LLC
NDIA Systems •
•
EIT, Inc.
Embedded Computing & Power
•
•
LG, Korea
Liebert Power and Cooling
•
•
Rolls Royce
Rockwell Automation
•
•
Vestas Wind System AS
Virginia Tech
• Weil, Gotshal & Manges LLP
Engineering • EMCORE Corporation • Lockheed Martin Aerospace • Rockwell Collins
• Lutron Electronics • Saab Avitronics • WesternGeco AS
• EMC
• Maxion Technologies, Inc. • Samsung Mechtronics • Whirlpool Corporation
• EADS - France
Excellence Award in 2009 • Emerson Advanced Design Ctr • Microsoft • Samsung Memory •
•
WiSpry, Inc.
Woodward Governor
CALCE Facilities and Capabilities

Environmental/Accelerated Testing
Environmental/Accelerated Testing Electronic Testing and Analysis
Electronic Testing and Analysis
Temperature‐Humidity Chambers
Temperature‐Humidity Chambers Non‐Destructive Evaluation
Non‐Destructive Evaluation Semiconductor Parameter Analyzer
3D X‐ray Imaging System Semiconductor Parameter Analyzer
HALT Temperature‐Vibration Chamber
HALT Temperature‐Vibration Chamber 3D X‐ray Imaging System Impedance Analyzer (1.86GHz)
Thermal Shock Chambers Scanning Acoustic Microscope (SAM) Impedance Analyzer (1.86GHz)
Thermal Shock Chambers Scanning Acoustic Microscope (SAM) Microcircuit Probe
Microcircuit Probe
••Liquid to Liquid
Liquid to Liquid Fourier Transform Infrared Spectroscopy (FTIR)
Fourier Transform Infrared Spectroscopy (FTIR) High Power Curve Tracer
••Air to Air Automated Contact Resistance Probe (ACRP) High Power Curve Tracer
Air to Air Automated Contact Resistance Probe (ACRP) LCR meter
LCR meter
HAST Temperature‐Humidity Chambers
HAST Temperature‐Humidity Chambers X‐Ray Fluorescence Spectroscopy (XRF)
X‐Ray Fluorescence Spectroscopy (XRF) Dynamic Signal Analyzer
High Altitude Simulation Chamber Dynamic Signal Analyzer
• Consumer and mobile products

High Altitude Simulation Chamber Event Detectors
Event Detectors
••Pressure, Humidity, and Temp. Cycling
Pressure, Humidity, and Temp. Cycling Electrometer
High Temperature Aging Chambers Electrometer
High Temperature Aging Chambers Failure Analysis LCZ Meter
LCZ Meter
Mixed Flowing Gas (MFG) Chamber Failure Analysis
• Telecommunications and computer systems
Mixed Flowing Gas (MFG) Chamber o o
Environmental Scanning Electron Microscope (ESEM) Thermal Inducing System (‐80oC to 225
Thermal Inducing System (‐80 C to 225oC)
C)
Electrodynamic Vibration Chamber
Electrodynamic Vibration Chamber Environmental Scanning Electron Microscope (ESEM)
•• (25x‐2500000x) Time Domain Reflectometer
Time Domain Reflectometer
Impact and Drop Test Apparatus
Impact and Drop Test Apparatus (25x‐2500000x)
•• Energy Dispersive Spectroscopy (EDS) Analog Oscilloscopes
Analog Oscilloscopes
SIR Testing
• Energy systems (generation/storage/distr)
SIR Testing Energy Dispersive Spectroscopy (EDS) Power Supplies
Hollow Fiber Assessment
Hollow Fiber Assessment •• In‐situ Heating/Mechanical Testing
In‐situ Heating/Mechanical Testing Power Supplies
Acoustic Anechoic Chamber High Speed Digital Oscilloscope up to 20 GS/sec
High Speed Digital Oscilloscope up to 20 GS/sec
Acoustic Anechoic Chamber Focused Ion Beam (FIB)
Focused Ion Beam (FIB) Digital Communication Analyzer
Digital Communication Analyzer
• Industrial systems
Stereoscopes (10x‐63x)
Stereoscopes (10x‐63x)
Optical Microscopes (25x‐1000x, Inverted and Upright) Arbitrary Wave Form Generator
Arbitrary Wave Form Generator
Sample Preparation
Sample Preparation Optical Microscopes (25x‐1000x, Inverted and Upright) Function Generator
Diamond Saw Image Analysis Software
Image Analysis Software Function Generator
Diamond Saw Contact Resistance Tester
• Transportation systems Polishing and Grinding Station Transmission Electron Microscope (TEM)
Transmission Electron Microscope (TEM) Contact Resistance Tester
Polishing and Grinding Station Noise Figure Analyzer
Plasma Etching
Plasma Etching Wire Pull, Bond Shear, Cold Bump Pull and Die Strength
Wire Pull, Bond Shear, Cold Bump Pull and Die Strength Noise Figure Analyzer
Ultrasonic Cleaning Automatic Chemical Decapsulator
Automatic Chemical Decapsulator Vector Network Analyzer
Vector Network Analyzer
Ultrasonic Cleaning
• Aerospace systems
Wire Bonder
Wire Bonder Ion Chromatograph
Ion Chromatograph High Resistance Meter
High Resistance Meter
Die Bonder
Die Bonder Digital Multimeters
Digital Multimeters
Buehler MPC 2000 Cross‐sectioning System
Buehler MPC 2000 Cross‐sectioning System Automated Data Acquisition Systems
Automated Data Acquisition Systems
• Medical systems
Cascade Probe Station with RF probing capability
Cascade Probe Station with RF probing capability
Opto‐Mechanics Experimentation
Opto‐Mechanics Experimentation Automatic Battery Testers (Four and Sixteen Channel
Automatic Battery Testers (Four and Sixteen Channel
Materials Characterization
Materials Characterization Geometric Moire
Geometric Moire Systems)
Systems)
• Military systems Differential Scanning Calorimeter (DSC) Microscopic and Shadow Moire

Microscopic and Shadow MoireInterferometry
Interferometry Ripple Current Tester
Ripple Current Tester
Differential Scanning Calorimeter (DSC)
Micro‐Mechanical Materials Tester Infrared Fizeau Interferometry
Infrared Fizeau Interferometry
Micro‐Mechanical Materials Tester
Thermo‐Mechanical Analyzer (TMA) Twyman‐Green Interferometry
Twyman‐Green Interferometry
Thermo‐Mechanical Analyzer (TMA)
• Equipment manufacturers Dynamic Mechanical Analyzer (DMA) Luminous Flux Measurement System
Luminous Flux Measurement System
Dynamic Mechanical Analyzer (DMA) Thermal Assessment and Management
Thermal Assessment and Management
Creep Testing Equipment •• 40”
40”Integrating Sphere
Integrating Sphere
Creep Testing Equipment Liquid Crystal Thermography
Liquid Crystal Thermography
Thin Film Analyzer (TFA) •• Spectroradiometer
Spectroradiometer
Thin Film Analyzer (TFA) Low Speed Wind Tunnel
• Government Labs and Agencies MTS servo‐hydraulic mechanical test system Low Speed Wind Tunnel
MTS servo‐hydraulic mechanical test system Hot Wire Anemometer
Hot Wire Anemometer
(5 grams to 200 kg)
(5 grams to 200 kg) Flow Visualization System
•• High‐strain rate characterization (100/sec) Virtual Qualification Lab Flow Visualization System
High‐strain rate characterization (100/sec) High Speed Video Camera
High Speed Video Camera
•• Tests can be conducted in vacuum, inert or
Tests can be conducted in vacuum, inert or calcePWA Accelerated Test Webbook Thermal Conductivity Testing System
reactive atmospheres (‐125 o o Thermal Conductivity Testing System
reactive atmospheres (‐125oC to 300
C to 300oC)
C) CADMP‐II PWA Assembly Webbook Laser Flash Thermal Property Measurement System
Laser Flash Thermal Property Measurement System
Micro‐Hardness Tester
Micro‐Hardness Tester calceFAST Integral Passives Webbook Flow/Velocity Measurement Facilities
Micro‐Fatigue Tester Flow/Velocity Measurement Facilities
Micro‐Fatigue Tester Defects PWA Failure Mechanism Webbook Pressure Measurement Facilities
Pressure Measurement Facilities
Adhesion Tester
Adhesion Tester Webbook Sensor Technology Webbook
1D Electrodynamic Shaker
1D Electrodynamic Shaker PEMs Webbook
Drop Towers
Drop Towers
Torsion Tester
Torsion Tester
www.calce.umd.edu

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Root-Cause Failure Analysis of Electronics

SMTA Philadelphia, March 14, 2013

Replication rights of all information is retained by individual presenters, their respective

categorized by failure site • Costs to the Customer

What is the Cost of Failure?* Outline

Retail Brokerages $6,450,000

Failure Mode The effect by which a failure is observed.

Failure Site The location of the failure.

Failure Model Quantitative relationship between lifetime or probability

Load Application/environmental condition needed (electrical,

Classification of Failures Failure Mechanism Identification

• It is helpful to distinguish between two key classes of

While generally synonymous, “Failure analysis” is

Root Cause Analysis is

* ABS Group, Inc., Root Cause Analysis Handbook, A Guide to Effective

Root Cause Analysis Process A Cause and Effect Diagram

Example of Failure Analysis Process Flow

• X-ray Fluorescence Spectroscopy

Deprocessing (Destructive In-Circuit Evaluation

10mm Connector PTHs

Non-Failed OVHM Non-Failed OVHM

OVHM: Oblique view high mag

Optical Images – PCB/Solder Mask Failed ESEM Images of Washers

Non-failed Non-failed Non-Failed

X-ray Inspection Failed Sample Diode Investigation – IR Imaging

Localized Hotspots (IR Imaging)

EDS elemental analysis

• Four dies in the package, die size is 5mm × 5mm.

EDS Line Scan Showing Silver and

Restart Criteria Corrective Actions

Failures of a Failure Analysis Program Further Suggested Reading

CALCE Facilities and Capabilities

• Consumer and mobile products

• Military systems Differential Scanning Calorimeter (DSC) Microscopic and Shadow Moire

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